ESD protection myths and realities
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O documento discute mitos e realidades da descarga eletrostática (ESD), apresentando: 1) Mitos comuns sobre ESD e seus efeitos nos sistemas; 2) Requisitos técnicos e padrões de ESD para indústria e automotivo; 3) Parâmetros importantes de datasheets.
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ESD protection myths and realities
- 1. public
- 2. public Myths and Realities of ESD Nexperia Application Seminar - 22 June 2022 - 15:00 About the seminar Join Hueliquis Fernandes & Yoshinori Kanno as they review common myths and realities of ESD In this seminar you will learn: • Common ESD myths, its importance, and effects on systems • Technical ESD requirements and standards for industrial and automotive • Key data sheet parameters • Important applications and protection examples • ESD Resources available to engineers Every attendee will receive electronic copies of our popular ESD application handbooks. ESD Background • ESD in Handling, Manufacturing, and the Field • Device Level ESD in discrete components • HBM / MM / CDM evaluation methods About Hueliquis Fernandes: Business Development manager - Alliance Rep Huéliquis is an experienced businessperson. In the past 25+ years he worked for Future Electronics, Motorola/Freescale, ST Microelectronics and Renesas. About Yoshinori Kanno: Field Applications Engineer - Alliance Rep Yoshinori is graduated in Electronics Engineering and has a MSc Degree in Digital Signal Processing. In the past 20+ years he worked for Philips/NXP and at Global Distributors. Hueliquis Fernandes Yoshinori Kanno Dwayne Mott
- 3. Myths and realities of ESD Importance of ESD protection November 2021
- 4. public Contents Nexperia Introduction Myths and realities of ESD What is ESD ? ESD Device standards and tests HBM / CDM / MM / AECQ ESD system level tests IEC 61000-4-2 IEC 61000-4-5 Important datasheet parameters Common protection topologies Applications & Solutions Automotive – LIN / CAN / Ethernet Industrial / Consumer – HDMI / USB / GPIO Resources
- 5. Nexperia • Nexperia business highlights Company Presentation 5 1 in small-signal diodes and transistors in ESD protection devices 2 in Automotive Power MOSFETs >$2.0bn Annual revenue Units made annually Global leadership positions share market Global 9.0% 2 in small-signal MOSFETs in Logic devices > bn 100
- 6. Public Nexperia: a lifetime of “firsts” A century of electronics history nexperia.com 6 1920s 1930s 1940s 1950s 1960s 1970s 1980s 1990s 2000s 2010s 1927 Philips acquires Mullard and Valvo 1920 Mullard Radio Valve Company founded 1924 RRF GmbH (Valvo) formed in Hamburg 1961 Signetics founded in Silicon Valley 1975 Philips acquires Signetics 2006 Philips Semiconductors becomes NXP 2017 NXP Standard Products becomes Nexperia 1969 Industry standard SOT23 2002 LFPAK, the toughest Power- SO8 2012 Smallest Logic “GX5” 2001 First leadless SOD882 / SOT883 1953 First transistor production, the Valvo OC71 2018 Smallest Logic “GX4” 2019 Launch GaN FET
- 7. public 33% 33% 17% 6% 8% 2% EMS & MultiMarket Mobile & Wearables Automotive Computing Consumer Industrial & Power Nexperia Protection & Filtering Market Leader in ESD Protection nexperia.com 7 Nexperia Vs Competition • Major Market Share Gain 2016-2019 • Leading segments Mobile & Automotive • Continuous growth in Distribution & EMS S… O… Nexperia 1 2 3 4 S… 2021 Split by Market segment Market mega trends Miniaturization Moore’s Law => modern IC’s more & more vulnerable to ESD Increasing bandwidth Everything is connected (5G) => EMI worsening Large Package offering
- 8. Myths and realities of ESD Introduction
- 9. public Myths and Realities of ESD Common Myths There is no ESD in humid environments. No need to worry about ESD outside of manufacturing environments. A simple capacitor will eliminate ESD. My part already has ESD protection built in. Isn’t that good enough?? ESD didn’t cause my part to immediately fail so I’m safe. External ESD protection is expensive.
- 11. ESD – Electro Static Discharge Material / environmental influences affect charge separation Many materials have potential to cause ESD events 10 20 30 40 50 60 70 80 90 100 Relative Humidity in % 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 U in kV Synthetic fibres (ie carpet / car) wool Antistatic fibres e.g. offices without humidity control (in the winter) 11 Typical values for the electrostatic voltage to which a person can be charged when in contact with said materials.
- 12. public ESD – Defects caused by ESD Destruction mechanism 12
- 13. ESD – Protection Strategies inside ICs • Integrated circuits (ICs) are usually protected by internal measures against ESD damage. • This protection is usually only sufficient for manufacturing processes! • Devices with external interfaces (e.g., CAN, 100Base-T1, USB, HDMI, ...) usually require additional external ESD protection! 13
- 14. ESD – Protection Strategies inside ICs 14
- 15. ICs become more sensitive Increased performance and density lower the SoC ESD robustness nexperia.com 15 HBM kV Years 1975 1990 2005 2020 0 0.5 1 2 4 6 Current HBM target level Projected HBM target level max min Source: ESDA, 2016 Duvvy/Miller, 2009 ICs becoming more sensitive • Gate thickness and chip size (channel length) decreases • Maximum gate voltage decreasing • New Processes are optimized for area and performance 1 1 HBM targets will be lowered • Targets will be lowered to meet device level ESD robustness • Targets already lowered down • This trend is applicable for all systems 2 2 IC robustness will decrease and require more dedicated discrete ESD solutions IC area ESD area to achieve 2 kV HBM 50nm 12.5nm 8nm 4.15nm <1.5nm Gate Oxide Thickness
- 16. public ESD – Electro Static Discharge • ICs can be destroyed (ESD) during placement. • ESD "on-chip protection" protects against defects during production. • Qualification by standards (JEDEC) • Human Body Model (HBM) • Machine Model (MM) • Charged Device Model (CDM) • ESD pulses are given to all IC pins. Device level System level • ESD threatens also boards and (complete) devices. • Special diodes are added on the board to avoid destruction by ESD. • "System Level" ESD standards • IEC 61000-4-2 / IEC 61000-4-5 • ESD pulses are given to certain accessible interfaces. Individual components are not tested! 16
- 17. ESD Standards & Tests
- 18. public ESD – Device Level Testing: HBM • HBM was developed to simulate the discharge of a human body to a grounded device (IC). • To replicate an RC network is used: • R = 1500 ohms • C = 100 pF • ANSI / ESDA / JEDEC JS-001-2012 for Semiconductor Components AEC–Q101-1 for automotive • Different from standard IEC 61000-4-2 for devices (system level test) Human Body Model DC High Voltage supply DUT (device under Test) Rcharge (Mega Ohms) Rdischarge (1.5 kOhms) Ccharge (100 pF) 18 Low current – long duration
- 19. public ESD – Device Level Testing: CDM • CDM emulates the process of charging / discharging that can occur in production environments. • For example, ICs that are poured from plastic tubes and hit a metallic surface. • It is conceivable that charges have accumulated on the metal pins of an IC or on the package, ultimately discharging through a single grounded pin. • The discharge current is limited only by parasitic impedances and capacitance. • AEC-Q101-005 for Automotive Charged Device Model 19 Very high current – very short pulse duration
- 20. public ESD – System Level Testing: IEC 61000-4-2/4-5 Electrostatic discharge immunity test Contact discharge Air discharge Level Test voltage Level Test voltage kV kV 1 2 1 2 2 4 2 4 3 6 3 8 4 8 4 15 20 IEC 61000-4-2 Waveform IEC 61000-4-5 8/20 Waveform Automotive goes up to 30KV
- 22. public ESD Robustness • ESD Robustness of the device alone • This value does not allow to draw conclusion about system level ESD robustness ESD Robustness / ESD Rating / ESD Tolerance 22 • PESD2IVN24-T:
- 23. public ESD – Maximum Working Voltage • PESD2IVN24-T Reverse Working Maximum Voltage VRWM 23
- 24. public ESD – Leakage Current Maximum Reverse Current IRM PESD5V0V1BLD IP4369CX4 24
- 25. public ESD – Peak Pulse Current – Surge Pulses • PESD2IVN24-T Maximum current of a single event 25
- 27. public Nexperia’s ESD Protection Topologies ESD Protection Concepts for Different Application Needs pi-filter protection R I O Rail-to-rail protection IO Buffer solution O I Uni- / bi- directional diode IO IO • High Cd • Low complexity • Good clamping • Low Cd • Med complexity • Standard clamping • High Cd ,insertion loss • High complexity • Improved clamping • Low Cd • Highest complexity • Best clamping 27
- 28. public Characteristics of ESD Protections Classical Zener (Bidirectional, Rail to Rail, Filter) nexperia.com 28 VRWM: Reverse standoff voltage VBR: Breakdown voltage VCL: Clamping voltage IRM: Maximum reverse current IPP: Maximum surge current
- 29. public Characteristics of new ESD Protections Newer Snap Back (Buffer) nexperia.com 29 Vh -Vh VCL -VCL Vt -Vt VRWM: Reverse standoff voltage VBR: Breakdown voltage VCL: Clamping voltage IRM: Maximum reverse current IPP: Maximum surge current Vt: Trigger voltage Vh: Holding voltage Reducing VCL -> Improving Protection Robustness
- 30. Public Placing ESD protection right behind the connector 30 e.g. EMI Scanner: Investigation of different protection strategies on USB 3.x Board ESD put close to incoming Surge pulse enable better SoC protection (less current into SoC) Board inductance should be behind ESD protection for most efficient system-level protection
- 31. Impact of the package on RF and ESD performance • Nexperia high-speed packages are optimized for RF and ESD performance • A low package inductance also means a high resonance frequency to maximize the differential pass-band. • A low package inductance is reducing peak clamping voltages. • Integrated Common Mode Filter with ESD up to 10 GHz in low-inductance Wafer-Level CSP packages offer a further peak voltage reduction Narrow pads to reduce return loss
- 32. public ESD applications overview nexperia.com 32 LIN/ UART CAN/FD/XL FlexRay Ethernet 10/100/1000 BASE-T1 Ethernet MGBASE-T1 Infotainment USBx.y/HDMI Video Links GMSL,APIX, FPDLink SerDes Antenna/5G Speed 20 kbit/s 2 Mbit/s 5 Mbit/s 10 Mbit/s 10 Mbit/s up to 1 Gbit/s Up to 10 Gbit/s 480Mbit/s 1.3 Gbit/s up to 12 Gbit/s up to 16 Gbit/s ~Mbit/s Schematic ESD >15 kV >15 kV >15 kV >15kV >10 kV > 10 kV > 10 kV >10kV CD < 100 pF < 30 pF < 2 pF <0.5pF 1.5 to 0.2 pF < 0.5 pF < 0.5 pF <0.5pF Topology Multiple Buffer Buffer Buffer Multiple Multiple Multiple Buffer VRWM >24 V >24 V >24 V >24V >12 V for automotive < 5 V behind CMC >12 V for automotive < 5 V behind CMC >12 V for automotive < 5 V behind CMC 5.5V – 30V VBR / Vtrigger > 25 V > 25 V 100 V 100V <20V - - - Package SOD323 DFN1006BD-2 SOT23 SOT323 DFN1110D-3 DFN1412D-3 DFN1006BD-2 SOT23 DFN1006BD-2 DFN2510A-10 DFN2510D-10 DFN1006BD-2 SOT23 DFN2510A-10 DFN2510D-10 DFN1006BD-2 SOT23 DFN2510A-10 DFN2510D-10 DFN1006BD-2 DFN2510A-10 DFN2510D-10 DFN1006BD-2 DFN2510A-10 DFN2510D-10 DFN1006BD-2 Nexperia Products PESD1IVNx PESD2IVNx PESD2CANFDx PESDxETH1x PESDxETH1x PESD2USBx PESD4USBx PESDxVF1Bx PESDxC1x PCMFx PESD2USBx PESD4USBx PESDxVF1Bx PESDxC1x PCMFx PESD4USBx PESDxETH1x PESD2USBx PESDxVF1Bx PESDxVF1Bx
- 34. ESD Handbooks
- 35. ESD Application Handbooks PDF & Hardcopy nexperia.com 35 • What is ESD and it’s causes • Failure symptoms • Protection Methods • Testing standards & simulation methods • Covering a multitude of applications • Common interfaces • High Speed interfaces • Unique Version dedicated to automotive Application Handbooks are NOT a product marketing reference Link ESD
- 36. Service & Support Find out more about Nexperia and our products & services nexperia.com 36 Nexperia Internet www.nexperia.com • Search Function • Cross Reference • Parametric Search • Package Search • Product Overview 2 1 1 2 [Path to Datasheets, Product Brochures, Application Examples, … ] Documentation Center Link Selection Guide • Overview on all our Discrete, Logic and MOSFET devices − Diodes & Transistors − Protection & Filtering − MOSFETs − Logic − Packages
- 37. public Collaterals & Videos nexperia.com 37 New whitepapers in ENG, CN & GER New blog articles New videos … and more coming in 2022!