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Panorama da eletrônica
    orgânica: ciência
fundamental e aplicações
      ROBERTO M. FARIA
   Instituto de Física de São Carlos
   Universtidade de São Paulo
1. O que é Eletrônica Orgânica (EO)
2. Produtos no mercado
3. Resultados recentes do GPBG
4. INCT de Eletrônica Orgânica (INEO)
1. O que é Eletrônica
    Orgânica (EO)
Eletrônica do Silício
Junção pn e dispositivos
Poliacetileno
Moléculas eletrônicas
Duas Eletrônicas
Tecnologia de filmes finos
      nanométricos
2. Produtos no mercado
           ou
      próximo dele
OLEDs – Flexible electronics
    Organic Light-emitting diodes
OLEDs – Displays
 (Mercado atual)
OLEDs - Iluminação
Células solares
  orgânicas
Transistor Orgânico
CHIPS ORGÂNICOS
MERCADO DE EO
Global Organic Electronics Market is Set to Reach $34 Billion by 2015
http://www.strategyr.com/Organic_Electronics_Market_Report.asp



2010 to 2020 Market Size
IDTechEx find that the market for printed and thin film electronics will be $1.92
Billion in 2010. Of the total market in 2010, 35% will be printed.
Initially photovoltaics, OLED and e-paper displays grow rapidly, followed by
thin film transistor circuits, sensors and batteries. By 2020 the market will be
worth $55.1 Billion, with 71% printed and 60% on flexible substrates.
www.idtechex.com.


A $15.8 Billion Organic Electronics Materials Market by 2015
www.enn.com.
3. Resultados recentes do Grupo
   de Polímeros Bernhard Gross
SYNTHESIS
Synthesis of electronic polymers
ORGANIC DEVICES
WHITE ORGANIC LIGHT-EMITTING
           DIODE
         (WOLEDs)
OLEds
Polyfluorene based Blends for White Light
                Emission                          CH3

                                                   C          C
                                                                  CH3
                                                                                                                                         415              472                 554
                                                                                                                                                                                             % (LaPPS10)
                                                                                                                                                                                             % (P(MMA-co-MMAnt))
                                                        35            1                                                                                                                      % (LaPPS16)
                                                        O                                                                                                                                    % (MEH-PPV)
                                              O




                                                                                                    Normalized Intensity
                                                   C          C
          H13C6     C6H13                                         O
                            n                           O
              (a)                                                 CH2
                                                                                                                                               437                 501
                                                        CH3




                                                                          (b)
H13C6    C6H13
                                n

        (c)                           O


                                                                                                                                   400          450                500        550           600        650

                                          n
                                                                                                                                                                Wavelength (nm)

                                    (d)



                                                                                                    160

                                                                                                                                                JF14
                                                                                                                                                JF17




                                                                                Luminance (cd/m )
                                                                                                    120




                                                                                2
                                                                                                              80




                                                                                                              40




                                                                                                                           0
                                                                                                                               0          2           4             6         8        10         12         14    16
                                                                                                                                                                         Voltage (V)
ORGANIC LIGHT-EMITTING
 ELECTROCHEMICAL CELLS
        (OLECs)
Organic Light-Emitting Electrochemical Cell
Device structure
MATERIALS
Current and Luminance versus voltage
ORGANIC FIELD EFFECT
   TRANSISTORS
      (OFETs)
Field Effect Transistor




                          33
OFETs
                                             VD
                                       ID
     Fonte                  Dreno
             Semicondutor
               Isolante
                 Porta
                                             Vg


                            Regime de saturação



                                             Diferentes
ID                                          valores de Vg




             VD
                                                            34
OFETs P3HT/PMMA
                                                                                                           P3HT:Tetralin
                                                                                              -6
                                                                                              -5
Top-Gate Bottom-Contacts                                                                      -4
                                                                                                              A-T5
                                                                                                                                                     0
L = 100 µm ; W = 1,33mm                                                                       -3
                                                                                                                                                     -10
                                                                                                                                                     -20




                                                                                    ID ( A)
                                                                                                                                                     -30
      P3HT = 120 nm                                                                           -2
                                                                                                                                                     -40
                                                                                              -1                                                     -50
     PMMA = 600 nm                                                                              0
                                                                                                                                                     -60
                                                                                                                                                     -70
     R.T. and vaccum                                                                            1
                                                                                                                                                     -80

                                          P3HT:Dichlorobenzene                                  2
                                                                                                 20       0       -20       -40      -60     -80
                                     -8                                                                                 VD (V)
                                     -6          B-T5
                                                                              0
                                     -4                                       -10
                                                                              -20
                           ID ( A)




                                     -2                                       -30
                                                                              -40
                                                                                                         P3HT:Tetrahidrofuran
                                                                              -50
                                     0                                        -60                   -5
                                                                              -70                                       C-T5
                                     2                                        -80                   -4
                                                                                                                                                         0
                                                                                                    -3                                                   -10
                                     4                                                                                                                   -20
                                      20     0     -20      -40   -60   -80                         -2




                                                                                          ID ( A)
                                                                                                                                                         -30
                                                         VD (V)                                                                                          -40
                                                                                                    -1                                                   -50
                                                                                                    0                                                    -60
                                                                                                                                                         -70
                                                                                                    1                                                    -80

                                                                                                    2
                                                                                                     20       0      -20       -40     -60    -80
                                                                                                                           VD (V)
                                                                                                                                                    35
VM model




Occupation function


                      37
Generalized VM model

    1D para 2D
Poisson equation
Drain Current vs Voltage for different values
                 Simulations

 ID




                                    =1
                                    =4
              VG = 1
                                    =5
      0   1       2         3   4    5
                       VD
Simulation                             Experimental

         VG=0.25                      -5
         VG=0.5                                   C-T5
                                      -4
         VG=1                                                               0
                                      -3                                    -10
         VG=2                                                               -20
                                      -2




                            ID ( A)
                                                                            -30
                                                                            -40
                                      -1
ID




                                                                            -50
                                      0                                     -60
                                                                            -70
                                      1                                     -80

                                      2          P3HT:Tetrahidrofuran
                                       20   0    -20      -40   -60   -80
     0             1    2
                                                       VD (V)
                   VD
generalização do modelo VM
               OFET: 1600x25 (64:1)
        1400   1200       1000   800     600       400   200




                                                               12




                                                               10
dreno




                                                                    fonte
                                                               8




                                                               6




                                                               4
                                                               4
                                                               4
                                                               4
                                                               4
                                                               4
                                                               4
                                                               4
                                                               4
                                                               4
                                                               4




                                                               2




                                 porta
               ID




                      0           1            2
ORGANIC PHOTOVOLTAICS
        (OPVs)
ORGANIC BULK-HETEROJUNCTION
    PHOTOVOLTAIC DEVICES
OPVs
       Organic Photovoltaics
PCBM




P3HT

                                                      0




                    Densidade de corrente (mA/cm )
                                                                  ITO/PEDOT:PSS/P3HT:PCBM/Ca/Al




                    2
                                                      -2          JSC=10.8mA/cm
                                                                                2


                                                                  VOC=0.55V
                                                      -4
                                                                  FF=59%
                                                                    3.5%
                                                      -6

                                                      -8

                                                     -10

                                                     -12

                                                           -0.1     0.0       0.1   0.2    0.3     0.4   0.5   0.6
                                                                                    Voltagem (V)
OPV - Structure



Tabela 1 Espessura das camadas do dispositivo.
               Camada                            Espessura da camada (nm)
PEDOT:PSS                                                 30±3
P3HT:PCBM                                                300±12
Ca                                                         20
Al                                                         60
OPV - JV
              0          90K
              -2
J (mA/cm )
2




              -4
              -6
              -8
             -10                330K

                   0.0    0.2 0.4 0.6   0.8
                          Voltage (V)
Mobility by Photo-CELIV




             Dispersiveness Parameter:
Photo-CELIV results
                                                                 -12
         12 330K
                                                                 -10                       0.72
         10




                                                                              VOC (V)
                                                                 -8
J (mA/cm )




          8
2




                                                                                           0.64
                                                                 -6




                                                                      U (V)
          6
          4                                                      -4                        0.56
          2                                                      -2                          60
                90K




                                                                                 JSC (mA/cm ) FF (%)
          0                                                      0                                     45
                     0            4   8   12 16 20 24 28 32 36                                         30
                                               t ( s)




                                                                                2
                              5                                                                        10
             -5




                                                                                                       5
              (cm V s ) x10




                              4
                                                                                                       0
             -1 -1




                              3                                                                        3


                                                                                       
                                                                                        
                                                                                                       2

                                                                                       
             2




                              2                                                                        1
             




                                                                                                       0
                                                                                                            100   150   200     250   300
                              1
                                                                                                                        T (K)
                               80 120 160 200 240 280 320
                                          T(K)
Short-circuit current vs sample thickness
Our contribution for the
JV curves in the fourth quadrant
QUADRO DA EFICIÊNCIA
OUR APPROACH
     Basic equation:

 Solution:
  Initial conditions:




               Para


               is the schubweg valid for
MODEL
                       4. Uniform generation
                       5. E=V/L




(The steady-state continuity equation)
FITTING
               12 330K                                          10       330K
               10
               8
Jph (mA/cm )




                                                      Jph (mA/cm )
2




                                                      2
               6
                                                                     1
               4                                                                          90K
               2
                                          90K
               0
               0.0    0.5    1.0   1.5    2.0   2.5                         0.1           1
                               V0-V (V)                                        V0-V (V)



                Jph=|Jilu-Jdark|
Mobilities: theory and experiment

                                  5




                 -5
                  (cm V s ) x10
                                  4




                 -1 -1
                                  3



                 2
                                  2

                                 1
                                   80 120 160 200 240 280 320
                                              T(K)
4. Instituto Nacional de
Ciência e Tecnologia em
  Eletrônica Orgânica
          (INEO)
National Institute of Science and
     Technology on Organic
           Electronics




        www.ifsc.usp.br/~ineo
INSTITUTIONS
PUC – RIO    UFSCar - Sorocaba
INMETRO      UFT- DF
PUC – SP     UFU – DF
UEPG – DQ    UNESP – FCT
UEL - DF     UNESP – IBILCE
UFABC        UNESP – IGCE
UFMG - DF    UNICAMP – IFGW
UFMT – DF    UNICAMP – IQ
UFOP – DF    UNIFESP-
UFJF - DF    Diadema
UFPI - DF    USP - EP
UFPR - DF    USP- IF
                                 INEO comprises researchers
UFPR - DQ    USP - IEASC
                                 from 4 of the 5 regions of Brazil,
UFRN – ECT   USP – IFSC
                                 from 27 institutions and 35
UFSC – DF    CSEM-Brasil         groups of research.
WORKSHOPS INEO

                         APRIL 2011




APRIL 2012
Profile of Research in INEO
The proposal of INEO is to develop science and technology for strategic areas, as
Biotechnology, Health and Energy.

i) synthesis and chemical modification of molecules (small molecules and polymers);
ii) methods to prepare organized organic thin films with enhanced physicochemical
    properties;
iii) advanced methods to explore interfacial phenomena;
iv) analysis of electrical and optical properties of thin organic films;
v) molecular dynamics and conformational properties obtained with high-resolution
    NMR combined with thermal analysis and X-ray diffraction and scattering;
vi) theoretical approaches to determine the electronic and conformational properties
     of molecules as well as models for transport in optoelectronic devices;
vii) technological development of electronic and optoelectronic devices (OLEDs,
     OPVs, Transistors, etc.)
INEO IN NUMBERS
INEO IN NUMBERS
       A – SCIENTIFIC AND TECHNICAL PRODUCTION (32 MONTHS)

                                                  AMOUNT
Books                                                1
Chapters of books                                    3
Papers in National Journals                         22
Papers in International Journals
                               INEO IN NUMBERS      448
Publications in National Meetings                   88
Publications in International Meetings              121
Softwares
Patents
  Products                                           9
  Processes
Prizes and awards                                    9
Organization of Conferences and Symposia             7
INEO IN NUMBERS
                    B – FORMATION OF PEOPLE (32 MONTHS)

Concluded:
 Scientific Initiation                                    93
 Master                                                   90
 PhD                                                      38
 Pos-Doc                                                  21
 Others                                                    4

In progress:
  Scientific Initiation                                   120
  Master                                                  88
  PhD                                                     84
  Pos-Doc                                                 29
  Others                                                  12
INEO IN NUMBERS
                          C – TECHNOLOGICAL TRANSFER:

                                                                 AMOUNT
   Project with Suzano Pulp and Paper Company (in progress)         3
   Project with CSEM-Brazil (in progress)
   Project with Instituto de Pesquisa Eldorado (in discussion)




             D – SCIENTIFIC DIVULGATION AND AND MINI COURSES:

                                                                 QUANTIDADE


Mini-courses on Organic Electronics                                     8
MUITO OBRIGADO
PATENTS IN PROGRESS
Photoluminescent polymer composites.
T. J. Bonagamba, F. E. G. Guimarães, L. Akcelrud, T. D. Z. Atvars & J. R. Tozzoni,
 process: USP 2008.1.38332 (2009), protocolo INPI 018090046067: 06-10-2009.

Preparation processo f a smart stamp. G. R. Ferreira, C. K. B. de Vasconcelos,
T. Schimitberger & R. F. Bianchi. (2010).

Nanostructured films using material from Algal for remotion of metals from
aqueous solution. Cristina Freire Nordi, Valtencir Zucolotto (waiting for register).

Fabrication Processe of biosensors for detection of antibodies of anti-leishmania.
Ângelo Cesar Perinotto, Fabiana R. Santos, Marcelle C. Colhone, Denise B. Ferraz,
Katia R.P. Daghastanli, Rodrigo G. Stabeli, Pietro Ciancaglini, Osvaldo N. Oliveira,
Valtencir Zucolotto. (waiting for register).

Fabrication Process of biosensors for detection of thyroidal hormones.
Luana Bendo, Ana Carolina Migliorini Figueira,
Igor Polikarpov, Valtencir Zucolotto. (waiting for register).
ORGANIZATION OF SCIENTIFIC MEETINGS
International Conference on Advanced Materials (ICAM 2009)
Rio de Janeiro, September 2009:
          Symposium I:
          New Materials and Processes for Sensing and Biosensing
          Valtencir Zucolotto

          Symposium M:
          Frontiers in Photonic and Photovoltaic Materials and Processes
          Ana Flávia Nogueira

          Symposium Q:
          Materials and Processes for Large-Area Electronics
          Lucimara Stolz Roman

          Symposium T:
          Functional Materials For Organic Electronic and Nanotechnology
          Roberto Mendonça Faria and Marco Cremona

Workshop on Materials of Technological Interest
80 people: 15 researchers, mainly from Brazil and Spain, and 65 students
09 and 10/sept/2010 9 (Presidente Prudente)
Leni Akcelrud, Roberto Mendonça Faria, José Alberto Giacometti, and Carlos José Leopoldo Constantino




                                   ORGANIZATION OF SCIENTIFIC MEETINGS


           X Brazilian MRS Meeting - Symposium K: Supramomolecular organic materials
           for electronic, photonics and nanotechnology – Gramado 2011
           Leni Akcelrud, Roberto Mendonça Faria, José Alberto Giacometti, and Carlos
           José Leopoldo Constantino

           7th International Symposium on Advanced Materials and nanostructures –
           Sorocaba 2012
           Osvaldo Novais de Oliveira Jr.
ORGANIZATION OF MINI-COURSES
1 – ORGANIC ELECTRONICS:
Roberto Mendonça Faria, IFSC-USP and Juliusz Sworakowski (Wroclaw University of Technology,
Poland)
During the XXXII National Meeting of Condensed Matter (May, 2009 – Águas de Lindóia)
Number of students: 150

2 – INJECTION AND TRANSPORT PHENOMENA IN ORGANIC DEVICES
Roberto Mendonça Faria, IFSC-USP
Federal University of Piauí, August, 2009.
Number of students: 20

3 – FLEXIBLE ELECTRONICS
Marco Cremona PUC-Rio
During the XXXIII National Meeting of Condensed Matter, Águas de Lindóia May, 2010
Number od Students: 30

4 – ORGANIC ELECTRONICS
Marco Cremona and Jordan Del Nero (UFPA)
Inmetro
Number of Students: 50

5 – PHOTOPHYSICS AND PHOTOCHEMISTRY OF POLYMERS
Teresa D. Z. Atvaras and Paulo Miranda
Federal University of Piauí, October 2010.
Number of Students: 40
ORGANIZATION OF MINI-COURSES




ORGANIC ELECTRONICS:
Federal University of Santa Catarina - March 2011
Roberto Mendonça Faria, IFSC-USP

ORGANIC ELECTRONICS:
University of Ponta Grossa - September 2011
Roberto Mendonça Faria, IFSC-USP
IMPACTS CAUSED BY THE ACTIONS
                   AND RESULTS OF THE PROJECT
C – TECHNOLOGICAL TRANSFER: We are in the beginning of projects with
two companies Electronics in papers (Suzano) and Flexible Electronics (CSEM).

D – SCIENTIFIC DIVULGATION: INEO is one of the Sponsors of the
CiênciaWEB (used to divulgation of Science) whose site is:
http://143.107.180.237/iea/index.php/news_site/). Other programs are:
1- Workshop for teachers of primary and high schools;
2- Experimenting with Physics;
3 - De Cara com Feras (Facing the VIS)




E - MINI-COURSES:
With the courses and exchange, the knowledge on the part of the students about
Organic Electronics has been expanded fast.
MODEL
Electrical properties
Photo-CELIV measurements with thin films of F8BT




 • Field and temperature dependence of carrier mobility
 •Non-dispersive to dispersive transport
 • Energy barriers in metal/polymer interfaces
 • Bulk Fermi level position
 • Density of defect states in the gap
generalização do modelo VM
Solução numérica da equação de Poisson
IEA - Eletrônica Orgânica: uma nova fronteira da Ciência
IEA - Eletrônica Orgânica: uma nova fronteira da Ciência

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IEA - Eletrônica Orgânica: uma nova fronteira da Ciência

  • 1.
  • 2. Panorama da eletrônica orgânica: ciência fundamental e aplicações ROBERTO M. FARIA Instituto de Física de São Carlos Universtidade de São Paulo
  • 3. 1. O que é Eletrônica Orgânica (EO) 2. Produtos no mercado 3. Resultados recentes do GPBG 4. INCT de Eletrônica Orgânica (INEO)
  • 4. 1. O que é Eletrônica Orgânica (EO)
  • 6. Junção pn e dispositivos
  • 10. Tecnologia de filmes finos nanométricos
  • 11. 2. Produtos no mercado ou próximo dele
  • 12.
  • 13. OLEDs – Flexible electronics Organic Light-emitting diodes
  • 14. OLEDs – Displays (Mercado atual)
  • 16. Células solares orgânicas
  • 19. MERCADO DE EO Global Organic Electronics Market is Set to Reach $34 Billion by 2015 http://www.strategyr.com/Organic_Electronics_Market_Report.asp 2010 to 2020 Market Size IDTechEx find that the market for printed and thin film electronics will be $1.92 Billion in 2010. Of the total market in 2010, 35% will be printed. Initially photovoltaics, OLED and e-paper displays grow rapidly, followed by thin film transistor circuits, sensors and batteries. By 2020 the market will be worth $55.1 Billion, with 71% printed and 60% on flexible substrates. www.idtechex.com. A $15.8 Billion Organic Electronics Materials Market by 2015 www.enn.com.
  • 20. 3. Resultados recentes do Grupo de Polímeros Bernhard Gross
  • 25. OLEds Polyfluorene based Blends for White Light Emission CH3 C C CH3 415 472 554 % (LaPPS10) % (P(MMA-co-MMAnt)) 35 1 % (LaPPS16) O % (MEH-PPV) O Normalized Intensity C C H13C6 C6H13 O n O (a) CH2 437 501 CH3 (b) H13C6 C6H13 n (c) O 400 450 500 550 600 650 n Wavelength (nm) (d) 160 JF14 JF17 Luminance (cd/m ) 120 2 80 40 0 0 2 4 6 8 10 12 14 16 Voltage (V)
  • 30. Current and Luminance versus voltage
  • 31.
  • 32. ORGANIC FIELD EFFECT TRANSISTORS (OFETs)
  • 34. OFETs VD ID Fonte Dreno Semicondutor Isolante Porta Vg Regime de saturação Diferentes ID valores de Vg VD 34
  • 35. OFETs P3HT/PMMA P3HT:Tetralin -6 -5 Top-Gate Bottom-Contacts -4 A-T5 0 L = 100 µm ; W = 1,33mm -3 -10 -20 ID ( A) -30 P3HT = 120 nm -2 -40 -1 -50 PMMA = 600 nm 0 -60 -70 R.T. and vaccum 1 -80 P3HT:Dichlorobenzene 2 20 0 -20 -40 -60 -80 -8 VD (V) -6 B-T5 0 -4 -10 -20 ID ( A) -2 -30 -40 P3HT:Tetrahidrofuran -50 0 -60 -5 -70 C-T5 2 -80 -4 0 -3 -10 4 -20 20 0 -20 -40 -60 -80 -2 ID ( A) -30 VD (V) -40 -1 -50 0 -60 -70 1 -80 2 20 0 -20 -40 -60 -80 VD (V) 35
  • 36.
  • 38.
  • 39. Generalized VM model 1D para 2D
  • 41. Drain Current vs Voltage for different values Simulations ID =1 =4 VG = 1 =5 0 1 2 3 4 5 VD
  • 42. Simulation Experimental VG=0.25 -5 VG=0.5 C-T5 -4 VG=1 0 -3 -10 VG=2 -20 -2 ID ( A) -30 -40 -1 ID -50 0 -60 -70 1 -80 2 P3HT:Tetrahidrofuran 20 0 -20 -40 -60 -80 0 1 2 VD (V) VD
  • 43. generalização do modelo VM OFET: 1600x25 (64:1) 1400 1200 1000 800 600 400 200 12 10 dreno fonte 8 6 4 4 4 4 4 4 4 4 4 4 4 2 porta ID 0 1 2
  • 45. ORGANIC BULK-HETEROJUNCTION PHOTOVOLTAIC DEVICES
  • 46. OPVs Organic Photovoltaics PCBM P3HT 0 Densidade de corrente (mA/cm ) ITO/PEDOT:PSS/P3HT:PCBM/Ca/Al 2 -2 JSC=10.8mA/cm 2 VOC=0.55V -4 FF=59% 3.5% -6 -8 -10 -12 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Voltagem (V)
  • 47. OPV - Structure Tabela 1 Espessura das camadas do dispositivo. Camada Espessura da camada (nm) PEDOT:PSS 30±3 P3HT:PCBM 300±12 Ca 20 Al 60
  • 48. OPV - JV 0 90K -2 J (mA/cm ) 2 -4 -6 -8 -10 330K 0.0 0.2 0.4 0.6 0.8 Voltage (V)
  • 49. Mobility by Photo-CELIV Dispersiveness Parameter:
  • 50. Photo-CELIV results -12 12 330K -10 0.72 10 VOC (V) -8 J (mA/cm ) 8 2 0.64 -6 U (V) 6 4 -4 0.56 2 -2 60 90K JSC (mA/cm ) FF (%) 0 0 45 0 4 8 12 16 20 24 28 32 36 30 t ( s) 2 5 10 -5 5 (cm V s ) x10 4 0 -1 -1 3 3   2  2 2 1  0 100 150 200 250 300 1 T (K) 80 120 160 200 240 280 320 T(K)
  • 51. Short-circuit current vs sample thickness
  • 52. Our contribution for the JV curves in the fourth quadrant
  • 53.
  • 54.
  • 55.
  • 57.
  • 58. OUR APPROACH Basic equation: Solution: Initial conditions: Para is the schubweg valid for
  • 59. MODEL 4. Uniform generation 5. E=V/L (The steady-state continuity equation)
  • 60. FITTING 12 330K 10 330K 10 8 Jph (mA/cm ) Jph (mA/cm ) 2 2 6 1 4 90K 2 90K 0 0.0 0.5 1.0 1.5 2.0 2.5 0.1 1 V0-V (V) V0-V (V) Jph=|Jilu-Jdark|
  • 61. Mobilities: theory and experiment 5 -5 (cm V s ) x10 4 -1 -1 3 2 2  1 80 120 160 200 240 280 320 T(K)
  • 62. 4. Instituto Nacional de Ciência e Tecnologia em Eletrônica Orgânica (INEO)
  • 63. National Institute of Science and Technology on Organic Electronics www.ifsc.usp.br/~ineo
  • 64. INSTITUTIONS PUC – RIO UFSCar - Sorocaba INMETRO UFT- DF PUC – SP UFU – DF UEPG – DQ UNESP – FCT UEL - DF UNESP – IBILCE UFABC UNESP – IGCE UFMG - DF UNICAMP – IFGW UFMT – DF UNICAMP – IQ UFOP – DF UNIFESP- UFJF - DF Diadema UFPI - DF USP - EP UFPR - DF USP- IF INEO comprises researchers UFPR - DQ USP - IEASC from 4 of the 5 regions of Brazil, UFRN – ECT USP – IFSC from 27 institutions and 35 UFSC – DF CSEM-Brasil groups of research.
  • 65. WORKSHOPS INEO APRIL 2011 APRIL 2012
  • 66. Profile of Research in INEO The proposal of INEO is to develop science and technology for strategic areas, as Biotechnology, Health and Energy. i) synthesis and chemical modification of molecules (small molecules and polymers); ii) methods to prepare organized organic thin films with enhanced physicochemical properties; iii) advanced methods to explore interfacial phenomena; iv) analysis of electrical and optical properties of thin organic films; v) molecular dynamics and conformational properties obtained with high-resolution NMR combined with thermal analysis and X-ray diffraction and scattering; vi) theoretical approaches to determine the electronic and conformational properties of molecules as well as models for transport in optoelectronic devices; vii) technological development of electronic and optoelectronic devices (OLEDs, OPVs, Transistors, etc.)
  • 68. INEO IN NUMBERS A – SCIENTIFIC AND TECHNICAL PRODUCTION (32 MONTHS) AMOUNT Books 1 Chapters of books 3 Papers in National Journals 22 Papers in International Journals INEO IN NUMBERS 448 Publications in National Meetings 88 Publications in International Meetings 121 Softwares Patents Products 9 Processes Prizes and awards 9 Organization of Conferences and Symposia 7
  • 69. INEO IN NUMBERS B – FORMATION OF PEOPLE (32 MONTHS) Concluded: Scientific Initiation 93 Master 90 PhD 38 Pos-Doc 21 Others 4 In progress: Scientific Initiation 120 Master 88 PhD 84 Pos-Doc 29 Others 12
  • 70. INEO IN NUMBERS C – TECHNOLOGICAL TRANSFER: AMOUNT Project with Suzano Pulp and Paper Company (in progress) 3 Project with CSEM-Brazil (in progress) Project with Instituto de Pesquisa Eldorado (in discussion) D – SCIENTIFIC DIVULGATION AND AND MINI COURSES: QUANTIDADE Mini-courses on Organic Electronics 8
  • 72. PATENTS IN PROGRESS Photoluminescent polymer composites. T. J. Bonagamba, F. E. G. Guimarães, L. Akcelrud, T. D. Z. Atvars & J. R. Tozzoni, process: USP 2008.1.38332 (2009), protocolo INPI 018090046067: 06-10-2009. Preparation processo f a smart stamp. G. R. Ferreira, C. K. B. de Vasconcelos, T. Schimitberger & R. F. Bianchi. (2010). Nanostructured films using material from Algal for remotion of metals from aqueous solution. Cristina Freire Nordi, Valtencir Zucolotto (waiting for register). Fabrication Processe of biosensors for detection of antibodies of anti-leishmania. Ângelo Cesar Perinotto, Fabiana R. Santos, Marcelle C. Colhone, Denise B. Ferraz, Katia R.P. Daghastanli, Rodrigo G. Stabeli, Pietro Ciancaglini, Osvaldo N. Oliveira, Valtencir Zucolotto. (waiting for register). Fabrication Process of biosensors for detection of thyroidal hormones. Luana Bendo, Ana Carolina Migliorini Figueira, Igor Polikarpov, Valtencir Zucolotto. (waiting for register).
  • 73. ORGANIZATION OF SCIENTIFIC MEETINGS International Conference on Advanced Materials (ICAM 2009) Rio de Janeiro, September 2009: Symposium I: New Materials and Processes for Sensing and Biosensing Valtencir Zucolotto Symposium M: Frontiers in Photonic and Photovoltaic Materials and Processes Ana Flávia Nogueira Symposium Q: Materials and Processes for Large-Area Electronics Lucimara Stolz Roman Symposium T: Functional Materials For Organic Electronic and Nanotechnology Roberto Mendonça Faria and Marco Cremona Workshop on Materials of Technological Interest 80 people: 15 researchers, mainly from Brazil and Spain, and 65 students 09 and 10/sept/2010 9 (Presidente Prudente)
  • 74. Leni Akcelrud, Roberto Mendonça Faria, José Alberto Giacometti, and Carlos José Leopoldo Constantino ORGANIZATION OF SCIENTIFIC MEETINGS X Brazilian MRS Meeting - Symposium K: Supramomolecular organic materials for electronic, photonics and nanotechnology – Gramado 2011 Leni Akcelrud, Roberto Mendonça Faria, José Alberto Giacometti, and Carlos José Leopoldo Constantino 7th International Symposium on Advanced Materials and nanostructures – Sorocaba 2012 Osvaldo Novais de Oliveira Jr.
  • 75. ORGANIZATION OF MINI-COURSES 1 – ORGANIC ELECTRONICS: Roberto Mendonça Faria, IFSC-USP and Juliusz Sworakowski (Wroclaw University of Technology, Poland) During the XXXII National Meeting of Condensed Matter (May, 2009 – Águas de Lindóia) Number of students: 150 2 – INJECTION AND TRANSPORT PHENOMENA IN ORGANIC DEVICES Roberto Mendonça Faria, IFSC-USP Federal University of Piauí, August, 2009. Number of students: 20 3 – FLEXIBLE ELECTRONICS Marco Cremona PUC-Rio During the XXXIII National Meeting of Condensed Matter, Águas de Lindóia May, 2010 Number od Students: 30 4 – ORGANIC ELECTRONICS Marco Cremona and Jordan Del Nero (UFPA) Inmetro Number of Students: 50 5 – PHOTOPHYSICS AND PHOTOCHEMISTRY OF POLYMERS Teresa D. Z. Atvaras and Paulo Miranda Federal University of Piauí, October 2010. Number of Students: 40
  • 76. ORGANIZATION OF MINI-COURSES ORGANIC ELECTRONICS: Federal University of Santa Catarina - March 2011 Roberto Mendonça Faria, IFSC-USP ORGANIC ELECTRONICS: University of Ponta Grossa - September 2011 Roberto Mendonça Faria, IFSC-USP
  • 77. IMPACTS CAUSED BY THE ACTIONS AND RESULTS OF THE PROJECT C – TECHNOLOGICAL TRANSFER: We are in the beginning of projects with two companies Electronics in papers (Suzano) and Flexible Electronics (CSEM). D – SCIENTIFIC DIVULGATION: INEO is one of the Sponsors of the CiênciaWEB (used to divulgation of Science) whose site is: http://143.107.180.237/iea/index.php/news_site/). Other programs are: 1- Workshop for teachers of primary and high schools; 2- Experimenting with Physics; 3 - De Cara com Feras (Facing the VIS) E - MINI-COURSES: With the courses and exchange, the knowledge on the part of the students about Organic Electronics has been expanded fast.
  • 78. MODEL
  • 79.
  • 80. Electrical properties Photo-CELIV measurements with thin films of F8BT • Field and temperature dependence of carrier mobility •Non-dispersive to dispersive transport • Energy barriers in metal/polymer interfaces • Bulk Fermi level position • Density of defect states in the gap
  • 81.
  • 82. generalização do modelo VM Solução numérica da equação de Poisson