Original IGBT 6MBP20XSF060-50 20XSF060 060 20A 600V New Fuji

1. 1
6MBP20XSF060-50 IGBT Modules
IGBT MODULE (X series)
600V / 20A / IPM
Features
Low-side IGBTs are separate emitter type
Short circuit protection
Temperature sensor output function
Overheating protection
Under voltage protection
Fault signal output function
Input interface : TTL (3.3V/5V) Active high logic
Applications
AC 100 ~ 240V three phase inverter drive for small power
AC motor drives (such as compressor motor drive for
air conditioner, compressor motor drive for heat pump
applications, fan motor drive, ventilator motor drive)
Terminal assign and Internal circuit
Pin No. Pin Name Pin Description
3 VB (U) High-side bias voltage for U-phase IGBT driving
5 VB (V) High-side bias voltage for V-phase IGBT driving
7 VB (W) High-side bias voltage for W-phase IGBT driving
9 IN (HU) Signal input for high side U-phase
10 IN (HV) Signal input for high side V-phase
11 IN (HW) Signal input for high side W-phase
12 VCCH High-side control supply
13 COM Common supply ground
14 IN (LU) Signal input for low side U-phase
15 IN (LV) Signal input for low side V-phase
16 IN(LW) Signal input for low side W-phase
17 VCCL Low-side control supply
18 VFO Fault output
19 IS Over current sensing voltage input
20 COM Common supply ground
21 TEMP Temperature sensor output
22 N (W) Negative bus voltage input for W-phase
23 N (V) Negative bus voltage input for V-phase
24 N (U) Negative bus voltage input for U-phase
26 W Motor W-phase output
28 V Motor V-phase output
30 U Motor U-phase output
32 P Positive bus voltage input
36 NC No Connection
1696b
MARCH 2016
VB(U)
11
10
9
5
3
21
20
19
18
17
16
15
14
13
12
22
23
24
26
28
30
36
32
U
P
V
W
N(V)
N(U)
N(W)
Vcc
IN
GND
OUT
Vs
Vcc
UIN
VIN
WIN
UOUT
VOUT
WOUT
Fo
IS
GND
VFO
IS
COM
COM
IN(LU)
IN(LV)
IN(LW)
VCCL
VCCH
IN(HU)
IN(HV)
IN(HW)
VB(V)
VB(W)
TEMP
NC
VB
7
TEMP
Vcc
IN
GND
OUT
Vs
VB
Vcc
IN
GND
OUT
Vs
VB

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6MBP20XSF060-50 IGBT Modules
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Absolute Maximum Ratings at Tj=25°C, VCC=15V (unless otherwise specified)
Items Symbol Characteristics Unit Remarks
Inverterblock
DC Bus Voltage VDC 450 V Note *1
Bus Voltage (Surge) VDC(Surge) 500 V Note *1
Collector-Emitter Voltage VCES 600 V
Collector Current IC@25 20 A Note *2
Peak Collector Current ICP@25
40 A
VCC≧15V, VB(*)≧15V
Note *2, *3, *4
30 A
VCC≧13V, VB(*)≧13V
Note *2, *3, *4
Diode Forward current IF@25 20 A Note *2
Peak Diode Forward current IFP@25 40 A Note *2
Collector Power Dissipation PD_IGBT 41.0 W per single IGBT TC=25°C
FWD Power Dissipation PD_FWD 27.8 W per single FWD TC=25°C
Junction Temperature Tj 150 °C
Operating Junction Temperature TjOP -40 ~ +150 °C
Controlcircuitblock
High-side Supply Voltage VCCH -0.5 ~ 20 V Applied between VCCH-COM
Low-side Supply Voltage VCCL -0.5 ~ 20 V Applied between VCCL-COM
High-side Bias Absolute Voltage
VVB(U)-COM
VVB(V)-COM
VVB(W)-COM
-0.5 ~ 620 V
Applied between
VB(U)-COM, VB(V)-COM,
VB(W)-COM
High-side Bias Voltage for
IGBT gate driving
VB(U)
VB(V)
VB(W)
-0.5 ~ 20 V Note *4
High-side Bias offset Voltage
VU
VV
VW
-5 ~ 600 V
Applied between
U-COM, V-COM, W-COM
Note *5
Input Signal Voltage VIN
-0.5 ~ VCCH+0.5
-0.5 ~ VCCL+0.5
V Note *6
Input Signal Current IIN 3 mA sink current
Fault Signal Voltage VFO -0.5 ~ VCCL+0.5 V Applied between VFO-COM
Fault Signal Current IFO 1 mA sink current
Over Current sensing Input Voltage VIS -0.5 ~ VCCL+0.5 V Applied between IS-COM
Operating Junction Temperature Tj 150 °C
Operating Case Temperature TC -40 ~ +125 °C See Fig.1-1
Storage Temperature Tstg -40 ~ +125 °C
Isolation Voltage Viso AC 1500 Vrms Sine wave, 60Hz t=1min, Note *7
Note *1 : Applied between P-N(U), P-N(V), P-N(W)
Note *2 : Pulse width and duty were limited by T jmax.
Note *3 : VCC is applied between VCCH-COM,VCCL-COM.
Note *4 : VB(*) is applied between VB(U)-U, VB(V)-V, VB(W)-W.
Note *5 : ‌Over 13.0V applied between VB(U)-U, VB(V)-V, VB(W)-W. This IPM module might make incorrect response if the high-side bias offset voltage is less than
-5V.
Note *6 : Applied between IN(HU)-COM, IN(HV)-COM, IN(HW)-COM, IN(LU)-COM, IN(LV)-COM, IN(LW)-COM.
Note *7 : Applied between shorted all terminal and IMS (Insulated Metal Substrate).

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IGBT Modules6MBP20XSF060-50
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MARCH 2016
Electrical Characteristics
Inverter block (Tj=25°C unless otherwise specified)
Description Symbol Conditions min. typ. max. Unit
Zero gate Voltage
Collector current
ICES
VCE=600V
VIN=0V
Tj=25°C - - 1 mA
Tj=125°C - - 10 mA
Collector-Emitter
saturation Voltage
VCE(sat)
VCC=+15V
VB(*)=+15V
VIN=5V
Note *4
IC=2A
Tj=25°C
- 0.90 1.10
V
IC=20A
Tj=125°C
- 1.60 1.90
IC=20A
Tj=125°C
- 1.75 2.10
FWD Forward voltage drop VF
IF=20A
VIN=0V
Tj=25°C - 1.70 2.05
V
Tj=125°C 0.60 1.50 -
Turn-on time ton
VDC=300V
IC=20A
VCC=15V
VB(*)=15V
Tj=125°C
VIN=0V - 5V
See Fig.2-1
Note *4
- 1.00 1.35
µs
Turn-on delay td(on) - 0.80 -
Turn-on rise time tr - 0.20 -
VCE-IC Cross time of turn-on tc(on) - 0.40 0.65
Turn-off time toff - 1.00 1.40
Turn-off delay td(off) - 0.90 -
Turn-off fall time tf - 0.10 -
VCE-IC Cross time of turn-on tc(off) - 0.15 0.30
FWD Reverse Recovery time trr - 0.20 -

4. 4
6MBP20XSF060-50 IGBT Modules
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MARCH 2016
Control circuit block (Tj=25°C unless otherwise specified)
Description Symbol Conditions min. typ. max. Unit
Circuit current of Low-side ICCL
VCCL=15V VIN=5V - 0.6 0.9
mA
VCCL=15V VIN=0V - 0.6 0.9
Circuit current of High-side ICCH
VCCH=15V VIN=5V - 1.25 1.9
mA
VCCH=15V VIN=0V - 1.25 1.9
Circuit current of Bootstrap circuit (per one uint) ICCHB
VB(U)=15V,
VB(V)=15V,
VB(W)=15V
VIN=5V - - 0.20
mA
VIN=0V - - 0.20
Input Signal threshold voltage
Vth(on)
Note *8
Pw≥0.9µs
- 2.1 2.6 V
Vth(off) 0.8 1.3 - V
Input Signal threshold hysteresis voltage Vth(hys) 0.35 0.80 - V
Operational input pulse width of turn-on tIN(ON)
VIN=0V to 5V rise up
Note *6, Note *8
0.5 - - µs
Operational input pulse width of turn-off tIN(OFF)
VIN=5V to 0V fall down
Note *6, Note *8
0.7 - - µs
Input current IIN VIN=5V, Note *6 0.7 1.0 1.5 mA
Input pull-down resistance RIN Note *6 3.3 5.0 7.2 kΩ
Fault Output Voltage
VFO(H)
VIS=0V, VFO terminal pull up to 5V by
10kΩ
4.9 - - V
VFO(L) VIS=1V, IFO=1mA - - 0.95 V
Fault Output pulse width tFO Note *9, See Fig.2-2, 2-3 20 - - µs
Over Current Protection Voltage Level VIS(ref) VCC=15V
Note *3, *10
See Fig.2-2
0.455 0.48 0.505 V
Over Current Protection Delay time td(IS) 0.3 0.8 1.3 µs
Output Voltage of temperature sensor V(temp) Note *11
TC=90°C 2.63 2.77 2.91 V
TC=25°C 0.88 1.13 1.39 V
LVIC Overheating protection TOH
See Fig.2-6
136 143 150 °C
TOH Hysteresis TOH(hys) 4 10 20 °C
Vcc Under Voltage Trip Level of Low-side VCCL(OFF)
Tj150°C
See Fig.2-3
10.3 - 12.5 V
Vcc Under Voltage Reset Level of Low-side VCCL(ON) 10.8 - 13.0 V
Vcc Under Voltage hysteresis VCCL(hys) - 0.5 - V
Vcc Under Voltage Trip Level of High-side VCCH(OFF)
Tj150°C
See Fig.2-4
8.3 - 10.3 V
Vcc Under Voltage Reset Level of High-side VCCH(ON) 8.8 - 10.8 V
Vcc Under Voltage hysteresis VCCH(hys) - 0.5 - V
VB Under Voltage Trip Level VB(OFF)
Tj150°C
See Fig.2-5
10.0 - 12.0 V
VB Under Voltage Reset Level VB(ON) 10.5 - 12.5 V
VB Under Voltage hysteresis VB(hys) - 0.5 - V
Forward voltage of Bootstrap diode
VF(BSD)
Tj=25°C
IF(BSD)=10mA
0.90 1.4 1.90
V
VF(BSD)
Tj=25°C
IF(BSD)=100mA
2.3 4.3 6.3
Note *8 : This IPM module might make incorrect response if the input signal pulse width is less than tIN(on) and tIN(off) .
Note *9 : ‌Fault signal is asserted corresponding to an “Over-current protection” and an “Under-voltage protection” at low-side, and an “Over-heat protection”.
Under the condition of “Over-current protection” or “Under-voltage protection”, or “Over-heat protection”, the fault signal is asserted continuously while
these conditions are continuing. However, the minimum fault output pulse width is minimum 20µsec even if very short failure condition (which is less than
20µs) is triggered.
Note *10 : Over current protection is functioning only for the low-side arms.
Note *11 : Fig.1-1 shows the measurement position of temperature sensor.

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IGBT Modules6MBP20XSF060-50
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MARCH 2016
Thermal Characteristics
Description Symbol min. typ. max. Unit
Junction to Case Thermal Resistance
(per single IGBT)
Note *12
Rth(j-c)_IGBT - - 3.05 °C/W
Junction to Case Thermal Resistance
(per single FWD)
Note *12
Rth(j-c)_FWD - - 4.50 °C/W
Mechanical Characteristics
Description Symbol Conditions min. typ. max. Unit
Tighten torque - Mounting screw: M3 0.59 0.69 0.98 Nm
Heat-sink side flatness - Note. *13 0 - 100 µm
Weight - - - 9.3 - g
Recommended Operation Conditions
All voltages are absolute voltages referenced to Vcc –potential unless otherwise specified.
Description Conditions min. typ. max. Unit
DC Bus Voltage VDC 0 300 400 V
High-side Bias Voltage for IGBT gate driving VB(*) 13.0 15.0 18.5 V
High-side Supply Voltage VCCH 13.5 15.0 16.5 V
Low-side Supply Voltage VCCL 13.5 15.0 16.5 V
Control Supply variation
ΔVB -1 - 1
V/µs
ΔVCC -1 - 1
Input signal voltage VIN 0 - 5 V
Voltage for current sensing VISC 0 - 5 V
Potential difference of between Vcc to N (including surge) VCC_N -5 - 5 V
Dead time for preventing arm-short (Tc≤125°C) tDEAD 1.0 - - µs
Allowable output current (Note *14) IO - - 20.0 A rms
Allowable minimum input pulse width
(Note *15, Note *16)
PWIN(on) 0.5 - - µs
PWIN(off) 0.7 - - µs
PWM Input frequency fPWM - - 20 kHz
Operating Junction Temperature Tj(ope) -30 - 150 °C
Note *12: ‌Thermal compound with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of this device and heat-
sink.
Note *13: ‌Fig.1-2 shows the measurement position of heat sink flatness
Note *14 : VDC=300V, VCCH=VCCL=VB(*)=15V, PF=0.8, Sinusoidal PWM, 3phase modulation, Tj≤150°C ,Tc≤100°C , fPWM=5kHz, fo=200Hz, Ks=0.9
Note *15 : ‌In the pulse width of 0.5us, the loss of IGBT increases for the saturation operation.
To reduce the loss of IGBT, please enlarge the pulse width more than the switching time of IGBT.
Note *16 : This IPM module might response according to input signal pulse even when the input signal pulse width is less than PWIN(on) and PWIN(off) .

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6MBP20XSF060-50 IGBT Modules
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MARCH 2016
Package outline dimensions
Pin No. Pin Name
3 VB(U)
5 VB(V)
7 VB(W)
9 IN(HU)
10 IN(HV)
11 IN(HW)
12 VCCH
13 COM
Pin No. Pin Name
14 IN(LU)
15 IN(LV)
16 IN(LW)
17 VCCL
18 VFO
19 IS
20 COM
21 TEMP
Pin No. Pin Name
22 N(W)
23 N(V)
24 N(U)
26 W
28 V
30 U
32 P
36 NC
Note ※1: ‌The IMS(Insulated Metal Substrate) deliberately protruded from back surface of case.
It is improved of thermal conductivity between IMS and heat-sink.
14.13
13.0
26.0±0.5
3.2±0.1
14.0
14.7
29.4±0.5
±0.5
±0.5
0.40
10.6±0.1
(0.6)
8.964.76±0.3
※Note.1
5.63
±0.25
13.0±0.3
±0.3
±0.10.40±0.1
±0.5
±0.5
3.83
2.6±0.1
0.13±0.13

7. 7
IGBT Modules6MBP20XSF060-50
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MARCH 2016
Marking
6MBP20XSF
Note : ‌Product code A1 means current ratings , and “M” is marked.
Product code A2 means variations , and “F” is marked.

8. 8
6MBP20XSF060-50 IGBT Modules
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An example of application circuit.
Fig. shows an example of an application circuit.
Note *1: ‌Input signal for drive is High-Active. There is a pull-down resistor built in the IC input circuit. To prevent malfunction, the wiring of each input should be as short
as possible. When using R-C coupling circuit, make sure the input signal level meet the turn-on and turn-off threshold voltage.
Note *2: ‌By the function of the HVIC, it is possible of the direct coupling to microprocessor (MPU) without any photo-coupler or pulse-transformer isolation.
Note *3: ‌VFO output is open drain type. It should be pulled up to the positive side of a 5V power supply by a resistor of about 10kW.
Note *4: ‌To prevent erroneous protection, the wiring of (A), (B), (C) should be as short as possible.
Note *5: ‌The time constant R2-C2 of the protection circuit should be selected approximately 1.5µs.
Over current (OC) shutdown time might vary due to the wiring pattern. Tight tolerance, temp-compensated type is recommended for R2, C2.
Note *6: ‌Please set the threshold voltage of the comparator reference input to be same as the IPM OC trip reference voltage VIS(ref).
Note *7: ‌Please use high speed type comparator and logic IC to detect OC condition quickly.
Note *8: ‌If negative voltage of R1 at the switching timing is applied, the schottky barrier diode D1 is recommended to be inserted parallel to R1.
Note *9: ‌All capacitors should be mounted as close to the terminals of the IPM as possible. (C1, C4 : narrow temperature drift, higher frequency and DC bias
characteristic ceramic type are recommended, and C3, C5: narrow temperature drift, higher frequency and electrolytic type.)
Note *10: ‌To prevent surge destruction, the wiring between the snubber capacitor and the P terminal ,Ns node should be as short as possible. Generally a 0.1µ to 0.22µF
snubber capacitor (C6) between the P terminal and Ns node is recommended.
Note *11: ‌Two COM terminals (13 20 pin) are connected inside the IPM, it must be connected either one to the signal GND outside and leave another one open.
Note *12: ‌It is recommended to insert a zener-diode (22V) between each pair of control supply terminals to prevent surge destruction.
Note *13: ‌If signal GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended to connect signal GND and
power GND at only a point.
Vref=VIS(ref)
R2
R2
R2
C2
C2
C2
COMP
COMP
COMP
OR
R1
R1
R1
C3C3C3
ZD1ZD1ZD1
C5
10kΩ
+5VVcc
GND
MPU
ZD2
15V
M
C6
D1
D1
D1
C1
C1
C4 C4 C4
Ns
VB(U)
11
10
9
5
3
21
20
19
18
17
16
15
14
13
12
22
23
24
26
28
30
36
32
U
P
V
W
N(V)
N(U)
N(W)
Vcc
IN
GND
OUT
Vs
Vcc
UIN
VIN
WIN
UOUT
VOUT
WOUT
Fo
IS
GND
VFO
IS
COM
COM
IN(LU)
IN(LV)
IN(LW)
VCCL
VCCH
IN(HU)
IN(HV)
IN(HW)
VB(V)
VB(W)
TEMP
NC
VB
7
TEMP
Vcc
IN
GND
OUT
Vs
VB
Vcc
IN
GND
OUT
Vs
VB
3×HVIC
LVIC
3×BSD
6×IGBT 6×FWD
A
C
C
C
B
B
B
Long GND wiring here
might generate noise to
input and cause IGBT
malfunction.
Long wiring here might cause
OC level fluctuation and
malfunction.
Long wiring here might
cause short circuit failure
*Wiring Inductance should
be less than 10nH.
Bootstrap negative electrodes
should be connected to U,V,W
terminals directly and separated
from the main output wires
Bus voltage
(positive)
Bulk
capacitor
Bus voltage
(negative)

9. 9
IGBT Modules6MBP20XSF060-50
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MARCH 2016
Fig.1-1: ‌The measurement position of temperature sensor.
Fig.2-1: ‌Switching waveforms
Fig.1-2: ‌The measurement position of heat sink flatness
Approx.4.5
Approx.0.7
Approx. 7.0
TOP VIEWSIDE VIEW
Heat sink side
Tc measurement position
Temperature sensor position
Approx. 6.3
Measurement position
+-
+
-

10. 10
6MBP20XSF060-50 IGBT Modules
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MARCH 2016
Fig.2-2: ‌Operation sequence of Over current protection
Fig.2-3: ‌Operation sequence of VCCL Under voltage trip (lower side arm)
t1: ‌IS input voltage does not exceed VIS(ref), while the collector current of the lower side IGBT is under the normal operation.
t2: ‌When IS input voltage exceeds VIS(ref), the OC is detected.
t3: ‌The fault output VFO is activated and all lower side IGBT shut down simultaneously after the over current protection delay time td(IS). Inherently there is
dead time of LVIC in td(IS).
t4: ‌After the fault output pulse width tFO, the OC is reset. Then next input signal is activated.
When VCCL is under 4V, UV and fault output are not activated.
1 ‌When VCCL is under VCCL(ON), all lower side IGBTs are OFF state.
After VCCL rises VCCL(ON), the fault output V FO is released (high level).
And the LVI C starts to operate, then next input is activated.
2 ‌The fault output V FO is activated when VCCL falls below VCCL(OFF), and all lower side IGBT remains OFF state.
When the voltage drop time is less than 20µs, the fault output pulse width is generated minimum 20µs and all lower side IGBTs are OFF state in spite
of input signal condition during that time.
3 ‌UV is reset after tFO when VCCL exceeds VCCL(ON) and the fault output V FO is reset simultaneously.
And the LVI C starts to operate, then next input is activated.
4 ‌When the voltage drop time is more than tFO, the fault output pulse width is generated and all lower side IGBTs are OFF state in spite of input signal
condition during the same time.
Operation sequence of Over Current protection
OC detected
Input signal
VCCL(ON)
VCCL(OFF)
1 2 3
VCCL(ON)
tFO
20µs(min.)
VCCL(ON)
VCCL(OFF)
VCCL supply voltage
Lower side IGBT
Collector Current
VFO output voltage
tFO
4 3
UV detected
UV detected
Operation sequence of VCCL Under Voltage protection (lower side arm)
UV detected

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MARCH 2016
Fig.2-4: ‌Operation sequence of VCCH Under voltage trip (upper side arm)
Fig.2-5: ‌Operation sequence of VB Under voltage trip (upper side arm)
1 ‌When VCCH is under VCCH(ON), the upper side IGBT is OFF state.
After VCCH exceeds VCCH(ON), the HVI C starts to operate. Then next input is activated.
The fault output V FO is constant (high level) not to depend on VCCH.
2 ‌After VCCH falls below VCCH(OFF), the upper side IGBT remains OFF state.
But the fault output V FO keeps high level.
3 ‌The HVI C starts to operate after UV is reset, then next input is activated.
1 ‌When VB(*) is under VB(ON), the upper side IGBT is OFF state.
After VB(*) exceeds VB(ON), the HVIC starts to operate. Then next input is activated.
The fault output VFO is constant (high level) not to depend on VB(*). (Note*14)
2 ‌After VB(*) falls below VB(OFF), the upper side IGBT remains OFF state.
But the fault output VFO keeps high level.
3 ‌The HVIC starts to operate after UV is reset, then next input is activated.
Note *14: ‌The fault output is not given HVIC bias conditions.
Input signal
VCCH(ON)
1
VCCH(ON)
VCCH(OFF)
VCCH supply voltage
Upper side IGBT
Collector Current
VFO output voltage
2 3
UV detected
High-level
(no fault output)
UV detected
Operation sequence of VCCH Under Voltage protection (upper side arm)
Operation sequence of VB(*)(Note.*4) Under voltage protection (upper side arm)
Input signal
VB(ON)
1
VB(ON)
VB(OFF)
VB(*) supply voltage
VFO output voltage
2 3
UV detected
UV detected
UV detected
High-level
(no fault output)
Upper side IGBT
Collector Current

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6MBP20XSF060-50 IGBT Modules
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2016.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to
obtain the latest specifications.
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forth herein.
WARNING
Fig.2-6: ‌Overheat protection
This function is applied to “6MBP**XSF060-50”.
The IPM has the over-heating protection (OH) function by monitoring the LVIC temperature.
The TOH sensor position is shown in Fig.1-1.
1 The collector current of the lower side IGBT is under the normal operation while the LVIC temperature does not exceed TOH.
2 The IPM shutdown all lower side IGBTs while the LVIC temperature exceeds TOH.
3 The TEMP terminal continue to output the voltage which correspond to temperature of LVIC even if IPM is in OH condition.
4 The fault status is reset when the LVIC temperature drops below (TOH-TOH (hys)). The all lower side IGBTs restarted to normal operation.
Lower side arm
Input signal
Lower side IGBT
collector current
LVIC
temperature
TOH
TOH(hys)
tFO(min.)
2 4
VFO
output voltage
TOH -TOH(hys)
1
Voltage of
TEMP terminal
3
Operation sequence of the Overheat operation

13. Global
中国
Europe
North America
日本
Technical Information IGBT Modules
2015-10
Please refer to URLs below for futher information about products, application manuals and technical documents.
关于本规格书中没有记载的产品信息，应用手册，技术资料等，请参考以下链接。
本データシートに記載されていない製品情報 , アプリケーションマニュアル , 技術資料は以下の URLをご参照下さい。
FUJI ELECTRIC Power Semiconductor WEB site
Information
www.fujielectric.com/products/semiconductor/
www.fujielectric.com.cn/products/semiconductor/
www.fujielectric-europe.com/components/semiconductors/
www.americas.fujielectric.com/components/semiconductors/
www.fujielectric.co.jp/products/semiconductor/
日本
1 半導体総合カタログ www.fujielectric.co.jp/products/semiconductor/catalog/
2 製品情報 www.fujielectric.co.jp/products/semiconductor/model/
3 アプリケーションマニュアル www.fujielectric.co.jp/products/semiconductor/model/igbt/application/
4 技術資料 www.fujielectric.co.jp/products/semiconductor/model/igbt/technical/
5 マウンティングインストラクション www.fujielectric.co.jp/products/semiconductor/model/igbt/mounting/
6 IGBT 損失シミュレーションソフト www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation/
7 AT-NPC 3-Level 損失シュミレーションソフト www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation_3level/
8 富士電機技報 www.fujielectric.co.jp/products/semiconductor/journal/
9 製品のお問い合わせ www.fujielectric.co.jp/products/semiconductor/contact/
10 改廃のお知らせ www.fujielectric.co.jp/products/semiconductor/discontinued/
中国
1 半导体综合目录 www.fujielectric.com.cn/products/semiconductor/catalog/
2 产品信息 www.fujielectric.com.cn/products/semiconductor/model/
3 应用手册 www.fujielectric.com.cn/products/semiconductor/model/igbt/application/
4 技术资料 www.fujielectric.com.cn/products/semiconductor/model/igbt/technical/
5 安装说明书 www.fujielectric.com.cn/products/semiconductor/model/igbt/mounting/
6 IGBT 损耗模拟软件 www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation/
7 AT-NPC 3-Level 损耗模拟软件 www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation_3level/
8 富士电机技报 www.fujielectric.com.cn/products/semiconductor/journal/
9 产品咨询 www.fujielectric.com.cn/products/semiconductor/contact/
10 产品更改和停产信息 www.fujielectric.com.cn/products/semiconductor/discontinued/
Global
1 Semiconductors General Catalog www.fujielectric.com/products/semiconductor/catalog/
2 Product Information www.fujielectric.com/products/semiconductor/model/
3 Application Manuals www.fujielectric.com/products/semiconductor/model/igbt/application/
4 Technical Documents www.fujielectric.com/products/semiconductor/model/igbt/technical/
5 Mounting Instructions www.fujielectric.com/products/semiconductor/model/igbt/mounting/
6 IGBT Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation/
7 AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/
8 Fuji Electric Journal www.fujielectric.com/products/semiconductor/journal/
9 Contact www.fujielectric.com/products/semiconductor/contact/
10 Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/