Webinar: Fontes chaveadas digitais inteligentes com USB-PD
•
0 gostou•84 visualizações
The document discusses STMicroelectronics' ST-ONE solution for USB power delivery applications. ST-ONE is an all-in-one digital controller with an integrated USB-PD PHY that enables smaller, lighter and more efficient charger designs. It uses gallium nitride transistors and advanced topologies like active clamp flyback to achieve high power density. ST also provides the MasterGaN family of half-bridge drivers combined with GaN transistors to further improve performance. Evaluation tools are available to help customers design with ST-ONE and MasterGaN.
Recomendados
Recomendados
Mais conteúdo relacionado
Semelhante a Webinar: Fontes chaveadas digitais inteligentes com USB-PD
Semelhante a Webinar: Fontes chaveadas digitais inteligentes com USB-PD (20)
Mais de Embarcados
Mais de Embarcados (20)
Último
Último (20)
Webinar: Fontes chaveadas digitais inteligentes com USB-PD
- 1. 1
- 2. ST
- 3. Global presence Front-End Back-End Research & Development Main Sales & Marketing 3
- 5. Where to buy ST ? 5
- 6. Agenda 1 Energy trends 2 Gan Technology 3 Topologies improvement 4 ST-ONE 5 MasterGAN family 6 Evalboards 7 Takeaways 8 Q&A 6
- 8. Growth in USB charging market Strong market growth in USB-PD market Source: Transparency Market Research AC-DC adapters, USB-PD 0 10 20 30 40 50 60 70 80 90 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 Market Size ($billion) Year USB Charger Market 9.6% CAGR Considerable market growth with wide adoption of USB Type-C Medical power delivery 8
- 10. Silicon & wide-bandgap power devices positioning 10 W 100 W 1 kW 10 kW 100 kW 1 MW 1 W 1 Hz 10 Hz 100 Hz 1 kHz 10 kHz 100 kHz 1 MHz 10 MHz Higher power is achieved through modular deployment or paralleling devices Operating frequency System power level IGBT Si MOSFET SiC MOSFET GaN Transistor 10
- 11. • Bandgap is the energy the electrons need to jump from the top of the valence band to the bottom of the conductive band • Materials with Wide BandGap (WBG) • can withstand higher electrical fields → higher voltage can be applied • electrons have a higher mobility and saturation velocity → transistors switch faster → devices can be smaller for a given on resistance and breakdown voltage Wide BandGap Materials (WBG) Si GaN 11
- 12. GaN has dramatically lower gate charge Gate charging is process of charging input capacitance of transistor from the voltage source through gate resistors. This process generate losses on this resistors. Losses are given by equation: STO67N60DM6 SCTH35N65G2V-7 ▪ PGateDrive = fsw * VCC * QG ▪ QG : extracted from datasheet ▪ VCC: supply voltage of gate driver ▪ fsw : switching frequency of the transistor Rectangle ef energy 34x higher 28x higher Gate charge chart GaN 650V/ 50mΩ GaN MOSFET offers at the same Rdson ~30x lower gate charge compared to Si/SiC, which result in lower gate driver losses SiC Si 12
- 13. GaN reduces output capacitance energy Output capacitance energy value is important parameter for many topologies where Coss energy is dissipating. During the hard switching, energy of output capacitance is being dissipated to the heat. STO67N60DM6 ▪ PLossCoss = fsw * EOSS (VDS) ▪ EOSS : output capacitor stored energy ▪ fsw : switching frequency of the transistor Nonlinear Output capacitance - Coss stored energy SCTH35N65G2V-7 GaN 650V/ 50mΩ At typical bus voltage 400V, Si and SiC MOSFETs has ~2x higher Eoss than equivalent GaN 13
- 15. ISEC Schematic of flyback topology Vout Vin Leakage CTRL PWM VDS IMOS IMOS VDS IClamp PWM IClamp ISEC • Advantages: • Simple to design & simple to control • Disadvantages: • Energy of transformer leakage is dissipated to the heat (limited power) • MOSFET switch-on with non zero voltage → dissipating Coss stored energy No ZVS turn-on To heat at TVS 15
- 16. ISEC Schematic of active clamp flyback topology Vout Vin Leakage CTRL LS IMOS IMOS VDS IClamp LS IClamp ISEC HS VDS • Advantages: • Energy of transformer leakage is not dissipated, but is used for achiaving ZVD condition for MOSFET • Higher efficiency • Disadvantages: • More complex to design & control • Higher cost (two switches, floating driver) Waveforms simplified ZVS turn-on Energy stored Energy discharged RMS current in HS is lower than in LS → HS transistor can be smaller (asymmetrical half-bridge) 16
- 18. 4xsmaller 3xlighter 20% lower PLOSS ST-ONE Active clamp flyback with digital controller and galvanic isolation USB Power Delivery SPGND ISEN SSGND SRVDS HV Line sense Start-up X-cap Active Clamp Flyback Galvanic isolation SR Cortex M0+ Flash Memory USB-PD OVP PVCC POTP Digital Controller ST-ONE All-in-One Digital Controller USB PD Type-C 18
- 19. Why ST-ONE? ST-ONE • Advanced ZVS non-complementary ACF controller with synchronous rectification • USB 3.1 PPS interface • ARM® 32-bit Cortex®-M0+ MCU with 64 kB with flash memory for digital power control • Reinforced galvanically isolated dual communication channel • Fully Integrated USB-PD PHY Features • Lighter and smaller PCB • Higher power density • Minimized magnetic components and EMI filter • Cost-effective BoM • Higher efficiency Benefits Applications Charger & adapters Medical power 19
- 20. ST-ONE: All-In-One Solution • Light weight • High frequency • GaN transistors • Planar transformers High Power density • Soft switching • Low standby • Multimode operation High Efficiency • Single or multi-port • Flash memory • Protocol management Flexibility • All-in-one • Embedded Galvanic isolation BOM saving Primary + Secondary digital programmable controller with Galvanic Isolation 20
- 21. Typical configuration VOSNS ORGD CSP CSM SVCC CC1/2 GPIO0/1 PUMP SVDRV SV3V SPGND SRGD ISEN LON HON HV OVP PVCC PGND OSC POTP SSGND SRVDS LEB P3V3 SVCC DT EN_OUT SVCC SS V1V2 ST-ONE USB PD Thermal sensor / custom functions 3.3V – 21V DC 90V – 265V AC DRIVER ST-ONE + MASTERGAN minimize the total BOM 21
- 23. SEVERAL SMART FEATURES POTP Primary side overtemperature protection SS Soft-start setting OVP Ax winding sense for overvoltage protection PVCC Primary side supply voltage ISEN Current sense (PWM comparator) input VOSNS Output voltage sense SVCC Secondary side VCC CSN Output current sense ST-ONE pin-out ST-ONE 23
- 24. ST-ONE Block Diagram HV Start up, Primary side protections Primary OVP Primary OTP Soft Start, Primay Current sense Voltage sense OTP, Output Current sense USB-PD Sync Rect Load SW 24
- 25. • Fault Modes • Auto-restart; • Latched; • Conditioned restart; • Primary and Secondary side protections Fault management Extensive protections for the ST-ONE 25
- 26. • USB-PD module • One USBPD power SOURCE channel • UPBPD REV 3.1.1.2 specification • PPS (Programmable Power Supply) with Constant Current mode • Overcurrent management • Temperature management • Programmable WTP, OTP points USB-PD protocol USB-PD protocol management and protections 26
- 27. ST-ONE FW architecture ST-ONE Main scheduler USB-PD protocol stack Control Loop Real time debug GUI interface Flexible FW architecture • Complete PPS USB-PD protocol with configurable PDOs and APDOs • No-protocol mode available for fixed output applications and simple power debugging • Wide parameter set for application setting, control loop tuning and efficiency tuning • GUI interface to ease the application development and board tuning • Management of IC sleep modes for no-load conditions with wake up from USB-PD events • Communication between modules through system calls for flexibility • GUI interface can be disabled to protect FW and parameters setup Protections and power management MCU controls both USB-PD interface and power stage UART peripheral SMED & power peripherals USB-PD PHY peripheral HON/LON SRGD/ORGD CC1/CC2 27
- 28. ST-ONE GUI Basic features Program Flash Memory Handle automatic industrial ST-ONE programming Special features Read Instantaneous Information Calculate main board components Gloop study SW tool to help the customer from the beginning to the production phase of the application based on ST-ONE device 28
- 29. ST-ONE GUI 29
- 30. Ecosystem PCC020V2 connected to ST-ONE based board through CC pin (typeC port) PCC020V2 connected to ST-ONE based board through GPIO pin (deb port) GUI runs on PC PCC020V2 30
- 32. MasterGaN* platform The world first solution combining 600 V half-bridge driver with GaN HEMT: compact, robust & easy to design * registered and/or unregistered trademarks of STMicroelectronics International NV or its affiliates in the EU and/or elsewhere MasterGaN1 Up to 400W MasterGaN3 Up to 45 W MasterGaN2 Up to 65 W MasterGaN5 Up to 100 W MasterGaN4 Up to 200 W Active Clamp Flyback mainly 200mΩ + 500mΩ Asymmetrical HB 150mΩ + 200mΩ Asymmetrical HB 500mΩ + 500mΩ Symmetrical HB 200mΩ + 200mΩ Symmetrical HB 150mΩ + 150mΩ Symmetrical HB LLC Resonant mainly GQFN 9x9 mm2, pin-to-pin scalable 32
- 33. MasterGaN block diagram ri er ri er ogi inter o ing o erte p e e i ter e e i ter CC o CC CC HS GaN LS GaN HS Gate driver LS Gate driver Logic part 33
- 34. MasterGaN: typical supply ri er ri er ogi inter o ing o erte p e e i ter e e i ter CC o CC CC 5.0 - 6.5 V (LDO) ~10R AMR: -2V to 2V 34
- 35. Reverse conduction operation STL28N60DM2 Reverse conduction chart for MasterGaN1 and DM2 MasterGaN1 - 150 mΩ (25°C/3.2A) STL28N60DM2 - 150 mΩ (25°C/3A) MasterGaN1 • GaN transistor has no body diode, however the conduction is possible and no external free-wheeling diode is required. • GaN transistor has much higher voltage drop compare to Si MOSFET. GaN transistor Si MOSFET VSD VSD 35
- 36. Evaluation Tools
- 37. EVLONE65W: 65W Demo Board with MasterGaN 65W USB PD 3.1 Charger, ZVS Active Clamp Flyback based on ST-ONE + MasterGaN4 • Features • 65W USB-PD 3.1 • PPS support: 3.3V – 21V • RM8 transformer • Single PCB • Input: 90Vac – 264Vac • Switching Frequency 250kHz • Peak Efficiency ~94% Board size 2.28 x 1.25 x 0.78 in Power density: ~30 W/in3 Efficiency vs. Output power Available 37
- 38. Thermal performance - EVLONE65W 38
- 41. STDES-65ACFADP – schematics 1/2 41
- 42. STDES-65ACFADP – schematics 2/2 42
- 43. Takeaways ST-ONE introduces all-in-one USB-PD solution Designing with MasterGaN can increase power density and efficiency for high voltage converters Rich set of features for robust power supply design Visit us at www.st.com for more details and evaluation tools for ST-ONE!
- 45. © STMicroelectronics - All rights reserved. ST logo is a trademark or a registered trademark of STMicroelectronics International NV or its affiliates in the EU and/or other countries. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Find out more at www.st.com