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SPINTRONICS

                                        Abstract
The computer memory types in major usage are ROM and RAM.RAM is a volatile memory ,
which can store information only when power is ON. Hence during booting and shut down
process, transfer of data from RAM to hard driven and vice versa takes place.This increases the
time required to turn ON/OFF the personnel computer.

              MRAM is a developing technology having the advantage of being non-volatile form
of memory that has rewritability rates challenging conventional volatile RAM. Spintronics is the
basic principle behind the construction of MRAM cells. GMR (Giant Magneto Resistance)
materials has been identified to be exhibiting the great range of spintronics effects. It is a method
of storing data bits using magnetic charges instead of the electrical charges used by DRAMS. So
MRAM requires less memory refreshes, leading to better power consumption. Eventually the
usage MRAM as a replacement for other types of non volatile memory increases the speed .This
would allow the entire state of computer software to be stored after the computer has been turned
OFF. Upon the timing on of one’s computer all of the software configuration already be present.
Conceptually , the utilization of MRAM would virtually eliminate boot-up time.

             PRESENTED BY:

                               K.NITHYA- 10AAUO4052 (2nd Year) N.B.K.R.I.S.T

                               V.SANDHYA-10AAU04077 (2nd Year)N.B.K.R.I.S.T
Spintronics

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Spintronics

  • 1. SPINTRONICS Abstract The computer memory types in major usage are ROM and RAM.RAM is a volatile memory , which can store information only when power is ON. Hence during booting and shut down process, transfer of data from RAM to hard driven and vice versa takes place.This increases the time required to turn ON/OFF the personnel computer. MRAM is a developing technology having the advantage of being non-volatile form of memory that has rewritability rates challenging conventional volatile RAM. Spintronics is the basic principle behind the construction of MRAM cells. GMR (Giant Magneto Resistance) materials has been identified to be exhibiting the great range of spintronics effects. It is a method of storing data bits using magnetic charges instead of the electrical charges used by DRAMS. So MRAM requires less memory refreshes, leading to better power consumption. Eventually the usage MRAM as a replacement for other types of non volatile memory increases the speed .This would allow the entire state of computer software to be stored after the computer has been turned OFF. Upon the timing on of one’s computer all of the software configuration already be present. Conceptually , the utilization of MRAM would virtually eliminate boot-up time. PRESENTED BY: K.NITHYA- 10AAUO4052 (2nd Year) N.B.K.R.I.S.T V.SANDHYA-10AAU04077 (2nd Year)N.B.K.R.I.S.T