O documento discute o cálculo das propriedades eletrônicas e ópticas de um poço quântico duplo usando a técnica da matriz de transferência. As propriedades a serem avaliadas incluem o coeficiente de transmissão, energia própria e densidade de estados. Métodos numéricos como matriz de transferência, método da matriz de propagação e elementos finitos são considerados para o cálculo.
The document discusses LU decomposition and its applications in numerical linear algebra. It explains that LU decomposition decomposes a matrix A into lower and upper triangular matrices (L and U) such that A = LU. This decomposition allows the efficient solution of linear systems even when the right hand side vector changes. The document also discusses other related topics like matrix inverse, condition number, special matrices, and iterative refinement. It provides examples to illustrate LU decomposition and its use in calculating the inverse of a matrix.
This document discusses the charge-potential characteristics of a metal-oxide-semiconductor (MOS) capacitor. It defines band bending and presents the mathematical equations that describe the Poisson equation and charge variation in the MOS structure. Graphs are shown to represent the charge profile in different regimes like accumulation, depletion, weak inversion and strong inversion based on the applied gate voltage. The surface electric field and surface charge are also derived from the Poisson equation and Gauss' law.
1. The document discusses short channel effects in MOSFETs that occur when the channel length becomes small compared to other dimensions. This includes effects like hot carrier injection, dielectric breakdown, and threshold voltage shift.
2. Short channel effects arise due to improper scaling of the source potential and non-scalable properties like junction depth and built-in potentials. They can degrade device characteristics such as output impedance, mobility, and threshold voltage.
3. Specific short channel effects discussed include hot electron injection, dielectric breakdown, drain-induced barrier lowering, mobility degradation, and threshold voltage variation with channel length. Models for threshold voltage shift due to short channel effects are presented.
This document discusses MOSFET device physics and modeling. It begins with an overview of MOSFET operation and important equations. It then discusses modeling the current-voltage characteristics using gradual channel approximation. The document also covers threshold voltage control, mobility effects, sub-threshold behavior, and more complete models that include both drift and diffusion currents.
The document summarizes the binomial theorem and properties of binomial coefficients. It provides:
1) The binomial theorem expresses the expansion of (a + b)n as a sum of terms involving binomial coefficients for any positive integer n.
2) Important properties of binomial coefficients are discussed, such as their relationship to factorials and the symmetry of coefficients.
3) Examples are given of using the binomial theorem to find coefficients and solve problems involving divisibility and series of binomial coefficients.
Advanced Engineering Mathematics Solutions Manual.pdfWhitney Anderson
This document contains 27 multi-part exercises involving differential equations. The exercises cover topics such as determining whether differential equations are linear or nonlinear, solving differential equations, and classifying differential equations by order.
The document discusses LU decomposition and its applications in numerical linear algebra. It explains that LU decomposition decomposes a matrix A into lower and upper triangular matrices (L and U) such that A = LU. This decomposition allows the efficient solution of linear systems even when the right hand side vector changes. The document also discusses other related topics like matrix inverse, condition number, special matrices, and iterative refinement. It provides examples to illustrate LU decomposition and its use in calculating the inverse of a matrix.
This document discusses the charge-potential characteristics of a metal-oxide-semiconductor (MOS) capacitor. It defines band bending and presents the mathematical equations that describe the Poisson equation and charge variation in the MOS structure. Graphs are shown to represent the charge profile in different regimes like accumulation, depletion, weak inversion and strong inversion based on the applied gate voltage. The surface electric field and surface charge are also derived from the Poisson equation and Gauss' law.
1. The document discusses short channel effects in MOSFETs that occur when the channel length becomes small compared to other dimensions. This includes effects like hot carrier injection, dielectric breakdown, and threshold voltage shift.
2. Short channel effects arise due to improper scaling of the source potential and non-scalable properties like junction depth and built-in potentials. They can degrade device characteristics such as output impedance, mobility, and threshold voltage.
3. Specific short channel effects discussed include hot electron injection, dielectric breakdown, drain-induced barrier lowering, mobility degradation, and threshold voltage variation with channel length. Models for threshold voltage shift due to short channel effects are presented.
This document discusses MOSFET device physics and modeling. It begins with an overview of MOSFET operation and important equations. It then discusses modeling the current-voltage characteristics using gradual channel approximation. The document also covers threshold voltage control, mobility effects, sub-threshold behavior, and more complete models that include both drift and diffusion currents.
The document summarizes the binomial theorem and properties of binomial coefficients. It provides:
1) The binomial theorem expresses the expansion of (a + b)n as a sum of terms involving binomial coefficients for any positive integer n.
2) Important properties of binomial coefficients are discussed, such as their relationship to factorials and the symmetry of coefficients.
3) Examples are given of using the binomial theorem to find coefficients and solve problems involving divisibility and series of binomial coefficients.
Advanced Engineering Mathematics Solutions Manual.pdfWhitney Anderson
This document contains 27 multi-part exercises involving differential equations. The exercises cover topics such as determining whether differential equations are linear or nonlinear, solving differential equations, and classifying differential equations by order.
The document discusses the density of states (DoS) for bulk semiconductors and various quantum structures such as quantum wells, wires, and dots. It defines DoS as the number of available energy states per unit energy interval per unit dimension. It then derives expressions for the DoS of bulk semiconductors, quantum wells, quantum wires, and notes that quantum dots have a discrete DoS with delta function peaks.
1) The document discusses different types of capacitors including parallel plate, cylindrical, and spherical capacitors. Equations for electrostatic potential and electric field are derived for each type.
2) Examples problems are worked out on determining the capacitance of a parallel plate capacitor when a dielectric slab is inserted, and the capacitance of a coaxial cylindrical capacitor with dielectrics of different permittivities in each region.
3) Key equations presented include the capacitance of parallel plate, cylindrical, and spherical capacitors in terms of their geometric parameters and dielectric properties.
The document describes the design of a folded cascode operational amplifier. Key points:
- The goal is to design an op-amp with over 80dB gain, 10MHz bandwidth, 5V/us slew rate, and other specs using a folded cascode topology.
- Hand calculations are shown for determining device sizes to meet the gain, bandwidth, and slew rate specs.
- Simulation results show a gain of 17.5k, 604.7Hz bandwidth, and 3.5V/us slew rate, meeting most but not all specs.
- Analysis discusses the pros and cons of this topology, noting the difficulty of achieving high slew rate and the narrow input/
This document summarizes the design of a constant current reference circuit. It includes a circuit schematic, HSPICE code, and analysis of the current output. The constant current reference uses a start-up circuit, cascode bias circuit, and current reference circuit to output a constant current of 25 microamps. Simulation results show the circuit operates as intended, maintaining the target output current.
Ch1 lecture slides Chenming Hu Device for IC Chenming Hu
The document discusses the fundamentals of semiconductor materials and devices. It covers topics such as silicon crystal structure, doping, energy bands, carrier concentrations, and the Fermi level. Key points include:
- Silicon crystals have a cubic unit cell structure with each silicon atom bonded to four nearest neighbors. Silicon wafers are cut along specific crystal planes for integrated circuit fabrication.
- Doping silicon with elements from columns III and V of the periodic table creates N-type and P-type materials by introducing extra electrons or holes. This allows the control of carrier concentrations.
- The energy band model describes the transition from discrete atomic energy levels to continuous energy bands in solids. The sizes of the bandgap
Electronic devices and circuit theory 11th copyKitTrnTun5
This document contains significant equations and concepts related to electronic devices and circuits. Some key points include:
- Semiconductor diode equations including the relationship between voltage, current, and temperature.
- Bipolar junction transistor equations for current, voltage, power, and biasing configurations.
- Field effect transistor equations for current, voltage, power, and biasing configurations.
- Operational amplifier applications including inverting, non-inverting, summing amplifiers.
- Feedback and oscillator circuit concepts such as the Barkhausen criteria for oscillation.
Diodes and Special Diodes Unit - II by S S Kiran Sirsskiran88k
PART-A Junction Diode Characteristics
Describes about Open circuited P-N junction,
Biased P-N Junction,
P-N junction Diode,
Current components in PN junction Diode,
Diode Equation,
V-I Characteristics,
Temperature dependence on V-I characteristics, Diode Resistance, Diode Capacitance,
Energy band diagram of PN junction Diode
PART-B Special Semiconductor Diodes
Describes about Zener Diode,
Breakdown mechanisms,
Zener diode applications,
LED,
Photo diode,
Tunnel Diode,
SCR,
UJT. Construction,
Operation and characteristics of all the diodes are required to be considered.
Основні поняття економічних коливань
Тривалість економічних циклів
Фази економічних циклів
Індикатори зміни економічних циклів
Основні теорії виникнення економічних циклів
Singular Value Decompostion (SVD): Worked example 3Isaac Yowetu
Singular Value Decomposition (SVD) decomposes a matrix A into three matrices: U, Σ, and V. The document provides an example of using SVD to decompose the matrix A = [[3, 1, 1], [-1, 3, 1]]. It finds the singular values and constructs the U, Σ, and V matrices. The SVD of A is written as A = UΣV^T, where U and V are orthogonal matrices and Σ is a diagonal matrix containing the singular values of A.
This document contains solved problems related to electrostatics and dielectric materials. Key points include:
- The dielectric constant of a composite material is the weighted average of the dielectric constants of its constituent materials.
- Boundary conditions require the tangential electric field to be continuous across material interfaces, while the normal component is scaled by the relative permittivities of the materials.
- Energy density and stored electrostatic energy depend on the dielectric constant and electric field strength within each material.
- High dielectric constants and breakdown field strengths are desirable for capacitors to maximize the CVmax product.
The document discusses various types of carrier scattering that can occur in semiconductor devices. It describes scattering from ionized impurities, neutral impurities, dipoles, acoustic phonons via deformation potential and piezoelectric potential, optical phonons through polar and nonpolar interactions, and dislocations. It also defines ballistic transport as occurring when the carrier mean free path is longer than the device dimensions, resulting in phase coherent motion without scattering or heat generation.
This document summarizes lecture notes on electromagnetic wave propagation in free space from a course on electromagnetic theory. It begins with an introduction and lists the course details. It then derives Maxwell's equations in free space and shows that they lead to wave equations for the electric and magnetic fields. It is shown that the electric and magnetic field vectors are perpendicular to each other and the propagation vector. Key concepts discussed include the Poynting vector, energy, impedance, phase velocity, wavelength, and the relation between the electric and magnetic fields. Several examples are worked through.
This document contains lecture notes on electromagnetic theory from a course taught by Arpan Deyasi. It discusses the Biot-Savart law, which gives mathematical expressions for the magnetic field created by steady current-carrying wires and distributions of electric current. It also covers the Lorentz force law and how it relates to the combined electric and magnetic forces on a moving charged particle. Examples are presented on calculating magnetic fields and forces. The document concludes by deriving the solenoidal property of magnetic fields.
This document contains lecture notes on Ampere's circuital law from an Electromagnetic Theory course taught by Arpan Deyasi. It includes the integral and differential forms of Ampere's law, examples of using the law to determine magnetic fields and currents, and a case study of the magnetic field due to an infinite sheet of current. The key points covered are that the line integral of the magnetic field around a closed path equals the total current enclosed, and the curl of the magnetic field equals the current density.
This document contains lecture notes from a course on electromagnetic theory taught by Arpan Deyasi. It covers topics on magnetic scalar and vector potentials, including their definitions, properties, and applications to problems involving magnetic fields generated by currents. The notes provide the mathematical relationships between magnetic fields and potentials, and work through examples such as calculating the potentials for an infinite solenoid and current-carrying wire.
This document discusses transmission line propagation coefficients including reflection coefficient and transmission coefficient. It defines the reflection coefficient as the ratio of reflected to incident voltage or current. Reflection and transmission coefficients are derived for a transmission line terminated by a load impedance. Standing wave patterns on transmission lines are also analyzed. Key properties of standing waves include maximum and minimum voltages occurring at intervals of half wavelength and voltages/currents being 90 degrees out of phase.
The document discusses transmission line impedance and input impedance. It defines characteristic impedance as the ratio of voltage to current waves travelling along a transmission line. It provides expressions for characteristic impedance in terms of line parameters R, L, G, C. It then derives expressions for input impedance of open circuit, short circuit, matched and mismatched lossless transmission lines. It shows that input impedance is capacitive for a short open circuit line and inductive for a short circuit line.
This document discusses transmission lines and the conditions required for distortionless transmission. It notes that losses in transmission lines can occur due to I2R loss, skin effect, and crystallization. Distortion can arise from amplitude distortion, attenuation distortion, and phase distortion. The conditions for distortionless transmission are that the attenuation constant must be zero and the phase velocity must be independent of frequency. This requires that the line's inductance and capacitance per unit length satisfy LG/RC=1/2. The document also examines propagation constants and phase velocity for lossless transmission lines. It provides examples of calculating phase velocity, propagation constant, and phase wavelength for given line parameters.
The document discusses the density of states (DoS) for bulk semiconductors and various quantum structures such as quantum wells, wires, and dots. It defines DoS as the number of available energy states per unit energy interval per unit dimension. It then derives expressions for the DoS of bulk semiconductors, quantum wells, quantum wires, and notes that quantum dots have a discrete DoS with delta function peaks.
1) The document discusses different types of capacitors including parallel plate, cylindrical, and spherical capacitors. Equations for electrostatic potential and electric field are derived for each type.
2) Examples problems are worked out on determining the capacitance of a parallel plate capacitor when a dielectric slab is inserted, and the capacitance of a coaxial cylindrical capacitor with dielectrics of different permittivities in each region.
3) Key equations presented include the capacitance of parallel plate, cylindrical, and spherical capacitors in terms of their geometric parameters and dielectric properties.
The document describes the design of a folded cascode operational amplifier. Key points:
- The goal is to design an op-amp with over 80dB gain, 10MHz bandwidth, 5V/us slew rate, and other specs using a folded cascode topology.
- Hand calculations are shown for determining device sizes to meet the gain, bandwidth, and slew rate specs.
- Simulation results show a gain of 17.5k, 604.7Hz bandwidth, and 3.5V/us slew rate, meeting most but not all specs.
- Analysis discusses the pros and cons of this topology, noting the difficulty of achieving high slew rate and the narrow input/
This document summarizes the design of a constant current reference circuit. It includes a circuit schematic, HSPICE code, and analysis of the current output. The constant current reference uses a start-up circuit, cascode bias circuit, and current reference circuit to output a constant current of 25 microamps. Simulation results show the circuit operates as intended, maintaining the target output current.
Ch1 lecture slides Chenming Hu Device for IC Chenming Hu
The document discusses the fundamentals of semiconductor materials and devices. It covers topics such as silicon crystal structure, doping, energy bands, carrier concentrations, and the Fermi level. Key points include:
- Silicon crystals have a cubic unit cell structure with each silicon atom bonded to four nearest neighbors. Silicon wafers are cut along specific crystal planes for integrated circuit fabrication.
- Doping silicon with elements from columns III and V of the periodic table creates N-type and P-type materials by introducing extra electrons or holes. This allows the control of carrier concentrations.
- The energy band model describes the transition from discrete atomic energy levels to continuous energy bands in solids. The sizes of the bandgap
Electronic devices and circuit theory 11th copyKitTrnTun5
This document contains significant equations and concepts related to electronic devices and circuits. Some key points include:
- Semiconductor diode equations including the relationship between voltage, current, and temperature.
- Bipolar junction transistor equations for current, voltage, power, and biasing configurations.
- Field effect transistor equations for current, voltage, power, and biasing configurations.
- Operational amplifier applications including inverting, non-inverting, summing amplifiers.
- Feedback and oscillator circuit concepts such as the Barkhausen criteria for oscillation.
Diodes and Special Diodes Unit - II by S S Kiran Sirsskiran88k
PART-A Junction Diode Characteristics
Describes about Open circuited P-N junction,
Biased P-N Junction,
P-N junction Diode,
Current components in PN junction Diode,
Diode Equation,
V-I Characteristics,
Temperature dependence on V-I characteristics, Diode Resistance, Diode Capacitance,
Energy band diagram of PN junction Diode
PART-B Special Semiconductor Diodes
Describes about Zener Diode,
Breakdown mechanisms,
Zener diode applications,
LED,
Photo diode,
Tunnel Diode,
SCR,
UJT. Construction,
Operation and characteristics of all the diodes are required to be considered.
Основні поняття економічних коливань
Тривалість економічних циклів
Фази економічних циклів
Індикатори зміни економічних циклів
Основні теорії виникнення економічних циклів
Singular Value Decompostion (SVD): Worked example 3Isaac Yowetu
Singular Value Decomposition (SVD) decomposes a matrix A into three matrices: U, Σ, and V. The document provides an example of using SVD to decompose the matrix A = [[3, 1, 1], [-1, 3, 1]]. It finds the singular values and constructs the U, Σ, and V matrices. The SVD of A is written as A = UΣV^T, where U and V are orthogonal matrices and Σ is a diagonal matrix containing the singular values of A.
This document contains solved problems related to electrostatics and dielectric materials. Key points include:
- The dielectric constant of a composite material is the weighted average of the dielectric constants of its constituent materials.
- Boundary conditions require the tangential electric field to be continuous across material interfaces, while the normal component is scaled by the relative permittivities of the materials.
- Energy density and stored electrostatic energy depend on the dielectric constant and electric field strength within each material.
- High dielectric constants and breakdown field strengths are desirable for capacitors to maximize the CVmax product.
The document discusses various types of carrier scattering that can occur in semiconductor devices. It describes scattering from ionized impurities, neutral impurities, dipoles, acoustic phonons via deformation potential and piezoelectric potential, optical phonons through polar and nonpolar interactions, and dislocations. It also defines ballistic transport as occurring when the carrier mean free path is longer than the device dimensions, resulting in phase coherent motion without scattering or heat generation.
This document summarizes lecture notes on electromagnetic wave propagation in free space from a course on electromagnetic theory. It begins with an introduction and lists the course details. It then derives Maxwell's equations in free space and shows that they lead to wave equations for the electric and magnetic fields. It is shown that the electric and magnetic field vectors are perpendicular to each other and the propagation vector. Key concepts discussed include the Poynting vector, energy, impedance, phase velocity, wavelength, and the relation between the electric and magnetic fields. Several examples are worked through.
This document contains lecture notes on electromagnetic theory from a course taught by Arpan Deyasi. It discusses the Biot-Savart law, which gives mathematical expressions for the magnetic field created by steady current-carrying wires and distributions of electric current. It also covers the Lorentz force law and how it relates to the combined electric and magnetic forces on a moving charged particle. Examples are presented on calculating magnetic fields and forces. The document concludes by deriving the solenoidal property of magnetic fields.
This document contains lecture notes on Ampere's circuital law from an Electromagnetic Theory course taught by Arpan Deyasi. It includes the integral and differential forms of Ampere's law, examples of using the law to determine magnetic fields and currents, and a case study of the magnetic field due to an infinite sheet of current. The key points covered are that the line integral of the magnetic field around a closed path equals the total current enclosed, and the curl of the magnetic field equals the current density.
This document contains lecture notes from a course on electromagnetic theory taught by Arpan Deyasi. It covers topics on magnetic scalar and vector potentials, including their definitions, properties, and applications to problems involving magnetic fields generated by currents. The notes provide the mathematical relationships between magnetic fields and potentials, and work through examples such as calculating the potentials for an infinite solenoid and current-carrying wire.
This document discusses transmission line propagation coefficients including reflection coefficient and transmission coefficient. It defines the reflection coefficient as the ratio of reflected to incident voltage or current. Reflection and transmission coefficients are derived for a transmission line terminated by a load impedance. Standing wave patterns on transmission lines are also analyzed. Key properties of standing waves include maximum and minimum voltages occurring at intervals of half wavelength and voltages/currents being 90 degrees out of phase.
The document discusses transmission line impedance and input impedance. It defines characteristic impedance as the ratio of voltage to current waves travelling along a transmission line. It provides expressions for characteristic impedance in terms of line parameters R, L, G, C. It then derives expressions for input impedance of open circuit, short circuit, matched and mismatched lossless transmission lines. It shows that input impedance is capacitive for a short open circuit line and inductive for a short circuit line.
This document discusses transmission lines and the conditions required for distortionless transmission. It notes that losses in transmission lines can occur due to I2R loss, skin effect, and crystallization. Distortion can arise from amplitude distortion, attenuation distortion, and phase distortion. The conditions for distortionless transmission are that the attenuation constant must be zero and the phase velocity must be independent of frequency. This requires that the line's inductance and capacitance per unit length satisfy LG/RC=1/2. The document also examines propagation constants and phase velocity for lossless transmission lines. It provides examples of calculating phase velocity, propagation constant, and phase wavelength for given line parameters.
The document summarizes a lecture on the quantum Hall effect. It defines the quantum Hall effect as a phenomenon where the resistance of a quantum well system is quantized under low temperature and high magnetic field conditions. It then provides calculations to show that the quantum Hall resistance is quantized and equal to h/q^2, where h is Planck's constant and q is the elementary charge. Finally, it discusses how the quantization occurs due to the formation of discrete energy levels called Landau levels in the presence of a magnetic field.
This document discusses transmission lines and the Telegrapher's equation. It begins by introducing transmission lines and their parameters such as resistance, inductance, conductance and capacitance per unit length. It then derives the Telegrapher's equation that describes voltage and current on a transmission line. It shows how the equation can be used to find the propagation constant and solve for voltage and current as a function of position and time. It also discusses phase velocity and provides examples of calculating attenuation constant, phase constant, and phase velocity for different transmission line scenarios.
This document discusses the topic of electrostatics and dielectrics in the Electromagnetic Theory course. It defines a dielectric as a material where charge displacement occurs in an external electric field rather than free motion of charges. Dielectrics are classified as polar or nonpolar depending on whether they have a permanent dipole moment. The types of polarization in dielectrics are electronic, orientation, and ionic polarization. Key concepts discussed include polarization density, polarization charge density, the relationship between polarization and electric field through susceptibility and relative permittivity, atomic polarizability, and the relationship between polarization and electric displacement. An example problem calculates the polarization given the electric displacement.
1) An electric dipole is formed when two equal but opposite charges are separated by an infinitesimal distance. The dipole moment is defined as the product of the charge magnitude and the distance between them.
2) The electrostatic potential and electric field due to a dipole can be expressed in terms of the dipole moment. The potential and field decrease with increasing distance from the dipole.
3) A torque is experienced by a dipole when placed in an external electric field, with the torque being proportional to the cross product of the dipole moment and the electric field.
This document contains lecture notes on electrostatics and the application of Gauss' law from a course on electromagnetic theory taught by Arpan Deyasi. It defines line charge density, surface charge density, and volume charge density. It then uses Gauss' law to derive expressions for the electric field and potential due to different charge distributions, including line charges, surface charges on a ring and plane, and volume charges in a cylinder and sphere. Example problems are worked through applying Gauss' law to find electric fields and potentials for these various charge distributions.
This document discusses Gauss's law and related electromagnetic theory concepts taught in a course. It provides:
1) An overview of Gauss's law, which states that the total outward electric flux through a closed surface is equal to the total charge enclosed divided by the permittivity of the medium.
2) Derivations and proofs of Gauss's law using calculus theorems like divergence theorem.
3) Applications of Gauss's law to problems involving charge distributions and electric field calculations.
4) Discussions of related concepts like Gauss's law in polarized media, current continuity equation, relaxation time, and Poisson's equation.
5) Example problems demonstrating the application of these electromagnetic theory principles.
This document discusses Coulomb's law and some key concepts in electrostatics, including:
- Coulomb's law describes the electrostatic force between two point charges, being directly proportional to the product of the charges and inversely proportional to the square of the distance between them.
- The electric field intensity and electric flux density are introduced.
- Properties of the electric field such as it being irrotational are examined.
- The electrostatic potential is defined and its relationship to the electric field is explored.
This document discusses vector calculus theorems including Stokes' theorem and the divergence theorem. Stokes' theorem relates the line integral of a vector field around a closed curve to the surface integral of the curl of the vector field over any surface bounded by the curve. The divergence theorem relates the volume integral of the divergence of a vector field over a volume to the surface integral of the vector field over the boundary surface of that volume. The document provides proofs of these theorems and examples of their applications to problems involving conservative vector fields and evaluating integrals.
This document discusses a course on electromagnetic theory taught by Arpan Deyasi. It covers topics related to vector differentiation, including the vector differential operator in Cartesian, cylindrical and spherical coordinates. It also covers differentiation of scalar functions, including calculating gradients, directional derivatives and finding normals to surfaces. Finally, it discusses differentiation of vector functions, specifically divergence, which represents the volume density of the net outward flux from a vector field.
The document discusses various coordinate transformations between Cartesian, cylindrical, and spherical coordinate systems. It provides the transformation equations for scalar and vector variables between these coordinate systems. Examples are included to demonstrate transforming between Cartesian and cylindrical coordinates for points in both scalar and vector form. The key topics covered are the four types of coordinate transformations, the transformation equations, and examples to illustrate the transformations.
Molecular electronics aims to use electronic molecules as passive or active electronic components. It has advantages over silicon technology such as smaller size (1-3 nm vs 14 nm), faster time cycles (1 fs vs 1 ns), and ability to integrate more gates per square centimeter (1013 vs 108). Major challenges include difficulty experimentally verifying and directly characterizing molecular devices and fully integrating them with silicon technology. Potential applications include sensors, display devices, energy transaction devices, smart materials, and molecular-scale logic and memory devices.
Mais de RCC Institute of Information Technology (20)
Introdução ao GNSS Sistema Global de PosicionamentoGeraldoGouveia2
Este arquivo descreve sobre o GNSS - Globas NavigationSatellite System falando sobre os sistemas de satélites globais e explicando suas características
O presente trabalho consiste em realizar um estudo de caso de um transportador horizontal contínuo com correia plana utilizado em uma empresa do ramo alimentício, a generalização é feita em reserva do setor, condições técnicas e culturais da organização
AE03 - ESTUDO CONTEMPORÂNEO E TRANSVERSAL INDÚSTRIA E TRANSFORMAÇÃO DIGITAL ...Consultoria Acadêmica
“O processo de inovação envolve a geração de ideias para desenvolver projetos que podem ser testados e implementados na empresa, nesse sentido, uma empresa pode escolher entre inovação aberta ou inovação fechada” (Carvalho, 2024, p.17).
CARVALHO, Maria Fernanda Francelin. Estudo contemporâneo e transversal: indústria e transformação digital. Florianópolis, SC: Arqué, 2024.
Com base no exposto e nos conteúdos estudados na disciplina, analise as afirmativas a seguir:
I - A inovação aberta envolve a colaboração com outras empresas ou parceiros externos para impulsionar ainovação.
II – A inovação aberta é o modelo tradicional, em que a empresa conduz todo o processo internamente,desde pesquisa e desenvolvimento até a comercialização do produto.
III – A inovação fechada é realizada inteiramente com recursos internos da empresa, garantindo o sigilo dasinformações e conhecimento exclusivo para uso interno.
IV – O processo que envolve a colaboração com profissionais de outras empresas, reunindo diversasperspectivas e conhecimentos, trata-se de inovação fechada.
É correto o que se afirma em:
ALTERNATIVAS
I e II, apenas.
I e III, apenas.
I, III e IV, apenas.
II, III e IV, apenas.
I, II, III e IV.
Entre em contato conosco
54 99956-3050
Se você possui smartphone há mais de 10 anos, talvez não tenha percebido que, no início da onda da
instalação de aplicativos para celulares, quando era instalado um novo aplicativo, ele não perguntava se
podia ter acesso às suas fotos, e-mails, lista de contatos, localização, informações de outros aplicativos
instalados, etc. Isso não significa que agora todos pedem autorização de tudo, mas percebe-se que os
próprios sistemas operacionais (atualmente conhecidos como Android da Google ou IOS da Apple) têm
aumentado a camada de segurança quando algum aplicativo tenta acessar os seus dados, abrindo uma
janela e solicitando sua autorização.
CASTRO, Sílvio. Tecnologia. Formação Sociocultural e Ética II. Unicesumar: Maringá, 2024.
Considerando o exposto, analise as asserções a seguir e assinale a que descreve corretamente.
ALTERNATIVAS
I, apenas.
I e III, apenas.
II e IV, apenas.
II, III e IV, apenas.
I, II, III e IV.
Entre em contato conosco
54 99956-3050
Os nanomateriais são materiais com dimensões na escala nanométrica, apresentando propriedades únicas devido ao seu tamanho reduzido. Eles são amplamente explorados em áreas como eletrônica, medicina e energia, promovendo avanços tecnológicos e aplicações inovadoras.
Sobre os nanomateriais, analise as afirmativas a seguir:
-6
I. Os nanomateriais são aqueles que estão na escala manométrica, ou seja, 10 do metro.
II. O Fumo negro é um exemplo de nanomaterial.
III. Os nanotubos de carbono e o grafeno são exemplos de nanomateriais, e possuem apenas carbono emsua composição.
IV. O fulereno é um exemplo de nanomaterial que possuí carbono e silício em sua composição.
É correto o que se afirma em:
ALTERNATIVAS
I e II, apenas.
I, II e III, apenas.
I, II e IV, apenas.
II, III e IV, apenas.
I, II, III e IV.
Entre em contato conosco
54 99956-3050
AE03 - ESTUDO CONTEMPORÂNEO E TRANSVERSAL ENGENHARIA DA SUSTENTABILIDADE UNIC...Consultoria Acadêmica
Os termos "sustentabilidade" e "desenvolvimento sustentável" só ganharam repercussão mundial com a realização da Conferência das Nações Unidas sobre o Meio Ambiente e o Desenvolvimento (CNUMAD), conhecida como Rio 92. O encontro reuniu 179 representantes de países e estabeleceu de vez a pauta ambiental no cenário mundial. Outra mudança de paradigma foi a responsabilidade que os países desenvolvidos têm para um planeta mais sustentável, como planos de redução da emissão de poluentes e investimento de recursos para que os países pobres degradem menos. Atualmente, os termos
"sustentabilidade" e "desenvolvimento sustentável" fazem parte da agenda e do compromisso de todos os países e organizações que pensam no futuro e estão preocupados com a preservação da vida dos seres vivos.
Elaborado pelo professor, 2023.
Diante do contexto apresentado, assinale a alternativa correta sobre a definição de desenvolvimento sustentável:
ALTERNATIVAS
Desenvolvimento sustentável é o desenvolvimento que não esgota os recursos para o futuro.
Desenvolvimento sustantável é o desenvolvimento que supre as necessidades momentâneas das pessoas.
Desenvolvimento sustentável é o desenvolvimento incapaz de garantir o atendimento das necessidades da geração futura.
Desenvolvimento sustentável é um modelo de desenvolvimento econômico, social e político que esteja contraposto ao meio ambiente.
Desenvolvimento sustentável é o desenvolvimento capaz de suprir as necessidades da geração anterior, comprometendo a capacidade de atender às necessidades das futuras gerações.
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54 99956-3050
3. 1/17/2021 Arpan Deyasi,RCCIIT 3
Properties to be evaluated:
Electronic Properties
1. Transmission Coefficient
2. Eigen Energy
3. Density of States
Optical Properties
1. Absorption Coefficient
2. Oscillator Strength
4. Numerical Techniques may be
considered for Calculation
Transfer Matrix Technique (TMT)
Propagation Matrix Method (PMM)
Perturbation Method
WKB Approximation
Finite Element Method (FEM)
Finite Difference Time Domain Method (FDTD)
1/17/2021 4Arpan Deyasi,RCCIIT
5. 1/17/2021 Arpan Deyasi,RCCIIT 5
Q. Which have better accuracy?
Q. Which are faster for calculation?
We have to optimize between them
6. 1/17/2021 Arpan Deyasi,RCCIIT 6
FDTD and FEM are most accurate as per the literatures
TMT & PMM are faster which incorporate fast principle
7. 1/17/2021 Arpan Deyasi,RCCIIT 7
Today we will start the calculation of
Electronic Properties
using Transfer Matrix Technique
We will consider
Double Quantum Well structure
for our theoretical work
8. 1/17/2021 Arpan Deyasi,RCCIIT 8
Z
Z=0
Z=a
Z=a+b
Z=2a+b
a ab
DQWTB structure
A1 A2 A3 A4 A5
B1 B2 B3 B4
B5
I II III IV V
9. 1/17/2021 Arpan Deyasi,RCCIIT 9
Schrödinger Equation for well region
for V=0
2
2
22
( )
( ) ( ) 0
d z
z z
dz
ψ
κ ψ+ =
*
2 2
2 ( )wm z E
κ =
Schrödinger Equation for barrier region
2
2
22
( )
( ) ( ) 0
d z
z z
dz
ψ
κ ψ+ =
for V=V0
( )*
0
1 2
2 ( )bm z E V
κ
−
=
10. 1/17/2021 Arpan Deyasi,RCCIIT 10
Solution of Schrödinger Equation in different regions
1 1 1 1exp( ) exp( )I A i z B i zψ κ κ= + −
3 1 3 1exp( ) exp( )III A i z B i zψ κ κ= + −
5 1 5 1exp( ) exp( )V A i z B i zψ κ κ= + −
2 2 2 2exp( ) exp( )II A i z B i zψ κ κ= + −
4 2 4 2exp( ) exp( )IV A i z B i zψ κ κ= + −
11. 1/17/2021 Arpan Deyasi,RCCIIT 11
Ben-Daniel Duke Boundary Conditions
I IIΨ =Ψ
* *
1 1I II
I II
d d
dz dzm m
Ψ Ψ
=
A little modification is required in second boundary condition. Why?
12. 1/17/2021 Arpan Deyasi,RCCIIT 12
Both κ1 and κ2 are functions of m*
I IId d
dz dz
Ψ Ψ
=
So to avoid dual effect of m*, we will modify the 2nd condition as
13. 1/17/2021 Arpan Deyasi,RCCIIT 13
at Z = 0 (1st interface)
I IIψ ψ=
1 1 1 1
2 2 2 2
exp( ) exp( )
exp( ) exp( )
A i z B i z
A i z B i z
κ κ
κ κ
+ −
= + −
1 1 2 2A B A B+ = +
14. 1/17/2021 Arpan Deyasi,RCCIIT 14
at Z = 0 (1st interface)
' 'I IIψ ψ=
1 1 1 1 1 1
2 2 2 2 2 2
exp( ) exp( )
exp( ) exp( )
i A i z i B i z
i A i z i B i z
κ κ κ κ
κ κ κ κ
− −
= − −
1 1 1 1 2 2 2 2A B A Bκ κ κ κ− = −
15. 1/17/2021 Arpan Deyasi,RCCIIT 15
at Z = 0 (1st interface)
1 1 2 2A B A B+ = +
1 1 1 1 2 2 2 2A B A Bκ κ κ κ− = −
In matrix
notation
1 2
1 1 1 2 2 2
1 1 1 1A A
B Bκ κ κ κ
= − −
16. 1/17/2021 Arpan Deyasi,RCCIIT 16
at Z = 0 (1st interface)
1 2
1 1 1 2 2 2
1 1 1 1A A
B Bκ κ κ κ
= − −
1 2
1 2
1 2
A A
M M
B B
=
17. 1/17/2021 Arpan Deyasi,RCCIIT 17
at Z = a (2nd interface)
II IIIψ ψ=
2 2 2 2
3 1 3 1
exp( ) exp( )
exp( ) exp( )
A i z B i z
A i z B i z
κ κ
κ κ
+ −
= + −
2 2 2 2
3 1 3 1
exp( ) exp( )
exp( ) exp( )
A i a B i a
A i a B i a
κ κ
κ κ
+ −
= + −
18. 1/17/2021 Arpan Deyasi,RCCIIT 18
at Z = a (2nd interface)
' 'II IIIψ ψ=
2 2 2 2 2 2
1 3 1 1 3 1
exp( ) exp( )
exp( ) exp( )
i A i z i B i z
i A i z i B i z
κ κ κ κ
κ κ κ κ
− −
= − −
2 2 2 2 2 2
1 3 1 1 3 1
exp( ) exp( )
exp( ) exp( )
A i a B i a
A i a B i a
κ κ κ κ
κ κ κ κ
− −
= − −
19. 1/17/2021 Arpan Deyasi,RCCIIT 19
at Z = a (2nd interface)
2 2 2 2 3 1 3 1exp( ) exp( ) exp( ) exp( )A i a B i a A i a B i aκ κ κ κ+ −= + −
2 2 2 2 2 2
1 3 1 1 3 1
exp( ) exp( )
exp( ) exp( )
A i a B i a
A i a B i a
κ κ κ κ
κ κ κ κ
− −
= − −
In matrix
notation
2 2 2
2 2 2 2 2
31 1
31 1 1 1
exp( ) exp( )
exp( ) exp( )
exp( ) exp( )
exp( ) exp( )
i a i a A
i a i a B
Ai a i a
Bi a i a
κ κ
κ κ κ κ
κ κ
κ κ κ κ
−
− −
− −
= − − −
20. 1/17/2021 Arpan Deyasi,RCCIIT 20
at Z = a (2nd interface)
2 2 2
2 2 2 2 2
31 1
31 1 1 1
exp( ) exp( )
exp( ) exp( )
exp( ) exp( )
exp( ) exp( )
i a i a A
i a i a B
Ai a i a
Bi a i a
κ κ
κ κ κ κ
κ κ
κ κ κ κ
−
− −
− −
= − − −
32
3 4
32
AA
M M
BB
=
21. 1/17/2021 Arpan Deyasi,RCCIIT 21
at Z = (a+b) (3rd interface)
III IVψ ψ=
3 1 3 1
4 2 4 2
exp( ) exp( )
exp( ) exp( )
A i z B i z
A i z B i z
κ κ
κ κ
+ −
= + −
3 1 3 1
4 2 4 2
exp( ( ) exp( ( ))
exp( ( )) exp( ( ))
A i a b B i a b
A i a b B i a b
κ κ
κ κ
+ + − +
+ + − +
22. 1/17/2021 Arpan Deyasi,RCCIIT 22
' 'III IVψ ψ=
1 3 1 1 3 1
2 4 2 2 4 2
exp( ) exp( )
exp( ) exp( )
i A i z i B i z
i A i z i B i z
κ κ κ κ
κ κ κ κ
− −
= − −
1 3 1 1 3 1
2 4 2 2 4 2
exp( ( )) exp( ( ))
exp( ( )) exp( ( ))
A i a b B i a b
A i a b B i a b
κ κ κ κ
κ κ κ κ
+ − − +
+ − − +
at Z = (a+b) (3rd interface)
23. 1/17/2021 Arpan Deyasi,RCCIIT 23
In
matrix
notation
at Z = (a+b) (3rd interface)
31 1
31 1 1 1
2 2 4
2 2 2 2 4
exp( ( )) exp( ( ))
exp( ( )) exp( ( ))
exp( ( )) exp( ( ))
exp( ( )) exp( ( ))
Ai a b i a b
Bi a b i a b
i a b i a b A
i a b i a b B
κ κ
κ κ κ κ
κ κ
κ κ κ κ
+ − +
+ − − +
+ − +
= + − − +
3 1 3 1
4 2 4 2
exp( ( )) exp( ( ))
exp( ( )) exp( ( ))
A i a b B i a b
A i a b B i a b
κ κ
κ κ
+ + − +
= + + − +
1 3 1 1 3 1
2 4 2 2 4 2
exp( ( )) exp( ( ))
exp( ( )) exp( ( ))
A i a b B i a b
A i a b B i a b
κ κ κ κ
κ κ κ κ
+ − − +
+ − − +
24. 1/17/2021 Arpan Deyasi,RCCIIT 24
at Z = (a+b) (3rd interface)
3 4
5 6
3 4
A A
M M
B B
=
31 1
31 1 1 1
2 2 4
2 2 2 2 4
exp( ( )) exp( ( ))
exp( ( )) exp( ( ))
exp( ( )) exp( ( ))
exp( ( )) exp( ( ))
Ai a b i a b
Bi a b i a b
i a b i a b A
i a b i a b B
κ κ
κ κ κ κ
κ κ
κ κ κ κ
+ − +
+ − − +
+ − +
= + − − +
25. 1/17/2021 Arpan Deyasi,RCCIIT 25
at Z = (2a+b) (4th interface)
IV Vψ ψ=
4 2 4 2
5 1 5 1
exp( ) exp( )
exp( ) exp( )
A i z B i z
A i z B i z
κ κ
κ κ
+ −
= + −
4 2 4 2
5 1 5 1
exp( (2 )) exp( (2 ))
exp( (2 )) exp( (2 ))
A i a b B i a b
A i a b B i a b
κ κ
κ κ
+ − − +
+ + − +
26. 1/17/2021 Arpan Deyasi,RCCIIT 26
at Z = (2a+b) (3rd interface)
' 'IV Vψ ψ=
2 4 2 2 4 2
1 5 1 1 5 1
exp( ) exp( )
exp( ) exp( )
i A i z i B i z
i A i z i B i z
κ κ κ κ
κ κ κ κ
− −
= − −
2 4 2 2 4 2
1 5 1 1 5 1
exp( (2 )) exp( (2 ))
exp( (2 )) exp( (2 ))
A i a b B i a b
A i a b B i a b
κ κ κ κ
κ κ κ κ
+ − − +
+ − − +
27. 1/17/2021 Arpan Deyasi,RCCIIT 27
at Z = (2a+b) (3rd interface)
( ) ( )
( ) ( )
4 2 4 2
5 1 5 1
exp (2 ) exp (2 )
exp (2 ) exp (2 )
A i a b B i a b
A i a b B i a b
κ κ
κ κ
+ − − +
+ + − +
2 4 2 2 4 2
1 5 1 1 5 1
exp( (2 )) exp( (2 ))
exp( (2 )) exp( (2 ))
A i a b B i a b
A i a b B i a b
κ κ κ κ
κ κ κ κ
+ − − +
+ − − +
In
matrix
notation
2 2 4
2 2 2 2 4
51 1
51 1 1 1
exp( (2 )) exp( (2 ))
exp( (2 )) exp( (2 ))
exp( (2 )) exp( (2 ))
exp( (2 )) exp( (2 ))
i a b i a b A
i a b i a b B
Ai a b i a b
Bi a b i a b
κ κ
κ κ κ κ
κ κ
κ κ κ κ
+ − +
+ − − +
+ − +
= + − − +
28. 1/17/2021 Arpan Deyasi,RCCIIT 28
at Z = (2a+b) (3rd interface)
54
7 8
54
AA
M M
BB
=
2 2 4
2 2 2 2 4
51 1
51 1 1 1
exp( (2 )) exp( (2 ))
exp( (2 )) exp( (2 ))
exp( (2 )) exp( (2 ))
exp( (2 )) exp( (2 ))
i a b i a b A
i a b i a b B
Ai a b i a b
Bi a b i a b
κ κ
κ κ κ κ
κ κ
κ κ κ κ
+ − +
+ − − +
+ − +
= + − − +
29. 1/17/2021 Arpan Deyasi,RCCIIT 29
54
7 8
54
AA
M M
BB
=
1 54
7 8
54
AA
M M
BB
−
=
30. 1/17/2021 Arpan Deyasi,RCCIIT 30
3 4
5 6
3 4
A A
M M
B B
=
13 4
5 6
3 4
A A
M M
B B
−
=
1 13 5
5 6 7 8
3 5
A A
M M M M
B B
− −
=
31. 1/17/2021 Arpan Deyasi,RCCIIT 31
32
3 4
32
AA
M M
BB
=
1 32
3 4
32
AA
M M
BB
−
=
1 1 1 52
3 4 5 6 7 8
52
AA
M M M M M M
BB
− − −
=
32. 1/17/2021 Arpan Deyasi,RCCIIT 32
1 2
1 2
1 2
A A
M M
B B
=
11 2
1 2
1 2
A A
M M
B B
−
=
1 1 1 1 51
1 2 3 4 5 6 7 8
51
AA
M M M M M M M M
BB
− − − −
=
33. 1/17/2021 Arpan Deyasi,RCCIIT 33
51
51
AA
M
BB
=
51 11 12
51 21 22
AA M M
BB M M
=
1 1 1 1 51
1 2 3 4 5 6 7 8
51
AA
M M M M M M M M
BB
− − − −
=
34. 1/17/2021 Arpan Deyasi,RCCIIT 34
1 11 5 12 5A M A M B= +
1 21 5 22 5B M A M B= +
51 11 12
51 21 22
AA M M
BB M M
=
35. 1/17/2021 Arpan Deyasi,RCCIIT 35
M11 M12
M21 M22
A1
B1
A5
B5
M12 is the transmission coefficient
when the wave is traversing from port 2 to port 1
and port 1 is terminated by matched load
36. 1/17/2021 Arpan Deyasi,RCCIIT 36
M12 = 0 for practical device
1 11 5 12 5A M A M B= +
1
11
5
A
M
A
=
( )
2
5
*
1 11 11
1A
T E
A M M
= =