Personal Information

Setor

Education

Sobre

Arpan Deyasi is presently working as Assistant Professor in the Department of ECE at RCCIIT , Kolkata, INDIA. He has 15 years of professional experience in academics and industry. His work spans around in the field of semiconductor nanostructure, semiconductor photonics. He has published more than 150 peer-reviewed research papers and edited 6 books. He is associated with different International and National Conferences in various aspects, and organized several technical events under the banner of IE(I) Kolkata section. He is reviewer of a few journals of repute. He is senior member of IEEE, secretary of IEEE Electron Device Society (Kolkata Chapter), MIE(I), MOSI, MIETE, LMISTE.

Marcadores

i-v characteristics
quantum well
transmission coefficient
depletion width
phase velocity
absorption coefficient
quantum efficiency
built-in potential
bulk semiconductor
density of states
effective mass
efficiency
characteristic impedance
phase constant
attenuation constant
wavelength
laplace's equation
laplacian
body effect
applications
characteristics
current-voltage characteristics
advantages
range
distributed bragg reflector
input impedance
equivalent circuit
poisson's equaiton
strong inversion
depletion
accumulation
quantum well laser
output power
semiconductor laser
responsivity
electric field
depletion capacitance
extrinsic fermi level
p-n junction
diffusion
fermi sphere
effective density of states
degenerate semiconductor
landau level
quantum hall effect
fill factor
solar cell
link design
piezoelectric potential
deformation potential
ballistic transport
carrier scattering
poor conductor
good conductor
skin effect
skin depth
wave impedance
energy
poynting's vector
relative directions
wave equation
propagation in conducting medium
propagation in dielectric medium
free space propagation
lorentz force
solenoidal property of magnetic field
biot-savart law
infinite current carrying sheet
magnetic field intensity
magnetic flux
integral form
differential form
ampere's law
solenoidal
magnetic vector potential
magnetic scalar potential
standing wave ratio
standing wave
reflection coefficient
quarter wave transformer
double stub
stub
quarter wave line
half wave line
full wave line
single stub
matched line
open circuit line
short circuit line
phase wavelength
distortionless transmission line
significance of qhe
criteria of qhe
quantized resistance
propagation constant
telegrapher's equation
distributed line
lumped line
transmission line
polarization charge density
atomic polarizability
ionic polarization
orientation polarization
electronic polarization
nonpolar dielectric
polar dielectric
capacitance of earth
spherical capacitor
cylindrical capacitor
parallel-plate capacitor
dipole moment
torque of dipole
electric field of dipole
potential of dipole
volume charge density
surface charge density
line charge density
uniqueness theorem
relaxation time
current continuity equation
equipotential surface
gauss' law
electrostatic energy
electric field intensity
electric flux density
electrostatic potential
superposition principle
coulomb's law
green's theorem
helmhotz's theorem
conservative field
gauss' divergence theorem
stoke's theorem
del operator
directional derivative
curl of vector
divergence of vector
gradient of scalar
vector transformation
scalar transformation
spherical coordinate
cylindrical coordinate
cartesian coordinate
coordinate transformation
classification of moletronics
diode using moletronics
switch using moletronics
application of moletronics
moletronics
molecular beam epitaxy
liquid phase epitaxy
vapor phase epitaxy
mocvd
chemical vapor deposition
ion plating
sputtering
thermal evaporation
physical vapor deposition
czocharlski process
types of memristor
characteristics of memristor
relation between fundamental parameters
hysteresis in memristor
application of memristor
working principle of memristor
memristance
memristor
fully depleted mosfet
partially depleted mosfet
tunnelfet
finfet
soi mosfet
quadruple gate mosfet
gate all around mosfet
double gate mosfet
triple gate mosfet
drawbacks
schottky barrier
coaxial
top-gate
bottom-up
classification of cntfet
comparison with mosfet
cntfet
channel length modulation
practical threshold voltage
ideal threshold voltage
minority carrier concentration
n-mosfet
p-mosfet
channel formation
depletion mosfet
enhancement mosfet
operating principle of set
criteria for single electron tunneling
criteria for coulomb blockade
coulomb gap energy
equivalent circuit of set
tunneling resistance
single electron transistor
drain current
tunneling rate
coulomb blockade
coulomb field
materials
sheet charge density
2deg
band engineering
modulation doping
easki & tsu equation
fermi fucntion
low electric field
low temperature
quantum unit of conductance
current
conductance
resonant tunneling
application
transconductance
transfer characteristics
static characteristics
small-signal parameters
features of jfet
pinch-off voltage
principle of jfet
grooved junction solar cell
thin film solar cell
schottky barrier solar cell
tandem solar cell
stimulated emission
stimulated absorption
spontaneous emission
radiative recombination
population inversion
nonradiative recombination
emission rate
einstein's relation
classification of radar
minimum range
pulse radar
mti radar
range equation
maximum unambiguous range
pulse repetition time
pulse repetition frequency
radar
single-hole directional coupler
two-hole directional coupler
magic tee
directional coupler
hybrid tee
h-plane tee
e-plane tee
faraday rotation isolator
gyrator
attenuator
circulator
isolator
application of hbt
master equation
calculation
band diagram of hbt
asymmetric potential for carriers
lower emitter doping
alternative solutions
drawbacks of bjt
hbt
polarization electro-optic modulator
phase electro-optic modulator
amplitude electro-optic modulator
pockels effect
acoustic wavelength
bragg regime
raman-nath regime
electro-optic modulator
acousto-optic modulator
electro-optic effect
acousto-optic effect
optical modulator
anisotropic etching
isotropic etching
wet etching
dry etching
etching
vane type variable
flap type variable
variable type attenuator
fixed type attenuator
microwave attenuator
formulation of s matrix
features of s matrix
transmission loss
reflection loss
insertion loss
return loss
lossless network
reciprocity
scattering matrix
image rejection
double balanced mixer
up and down conversions
single-balanced mixer
performance parameters
fundamental of mixer
mixer
passive phase shifter
active phase shifter
variable phase shifter
fixed phase shifter
digital phase shifter
analog phase shifter
distributed phase shifter
ferrite phase shifter
phase shifter
depletion mode mesfet
enhancement mode mesfet
advantages of gaas mesfet
max oscillation frequency
cut-off frequency
mesfet
read diode
transit-time effect
microwave generation
reach-through
plasma formation
avalanche shock-front
conversion efficiency
field profile
trapatt
baritt
impatt
projection printing
proximity printing
contact printing
negative photoresist
positive photoresist
photoresist
photolithography
importance of sio2
reaction controlled case
diffusion limited case
wet oxidation
dry oxidation
oxidation
choice of material
interconnect
contact
gate
metallization
non-mechanical switch
mechanical switch
v-groove splicing
fusion splicing
switch
splice
connector
lsa mode
quenched domain mode
delayed domain mode
transit time mode
gunn ocillator
negative differential conductivity
domain formation
intraband transfer
gunn diode
transferred electron device
transferred electron effect
existing problems with pic
smart pixel array
optical spectrum
objective of pic
photonic integrated circuit
types
features
waveguide
omnidirectional mirrors
microcavity
porous silicon
disadvantages
material aspect
cholesteric
smectic
nematic
phases of lcd
working principle
lcd
advantages of lidar
lidar platforms
components of lidar
operational theory of lidar
optical radar
lidar
noise equivalent power
snr
avalanche photodiode
pin diode
threshold voltage variation
mobility degradation
dielectric breakdown
channel-length modulation
surface scattering
hot electron
drain-induced-barrier-lowering
impact ionization
mosfet
short-channel
transfer matrix technique
wave-vector
propagation matrix method
quantum dot
quantum wire
nonparabolic dispersion relation
parabolic dispersion relation
conduction band
eigenstates
band nonparabolicity
interband transition
oscillator strength
intraband transition
drive-in
predeposition
standard deviation
projected range
fick's law
ion implantation
edge emitting led
surface emitting led
double heterojunction led
distributed feedback laser
condition for optical gain
double heterojunction laser
single heterojunction laser
lasing condition
multi-level laser
current desnity
threshold population inversion
inverted mode
normal mode
charge control model
ebers-moll model
emitter bias
voltage-divider bias
fixed bias
cb mode
cc mode
ce mode
early effect
punch-through
base-width modualtion
gain parameters
gain with source resistance
output admittance
power gain
voltage gain
current gain
hybrid parameters
bjt
equivalent circuit of ujt
applications of triggering devices
operation of triac
triac
diac
ujt
triggering
unstable region
scr
shockley diode
fundamental gate
universal gate
truth table
logic gates
cmos
point of inversion
biased
unbiased
inversion
mos
charge variation
surface charge
surface electric field
weak inversion
high-frequency curve
low-frequency curve
depletion approximation
capacitance
short-circuit current
open-circuit voltage
temperature
shunt resistance
series resistance
loss factor
photovoltaic effect
difference between laser and led
bulk laser
semiconductor led
avalanche photodetector
p-i-n photodetector
p-n photodetector
optical detector
tunneling current
thermionic current
depletion region
large bandgap
valley point
peak point
tunnel diode oscillator
negative differential resistance
tunneling criteria
tunnel mechanism
junction capacitance
maximum electric field
potential
barrier lowering
electrical properties
metal-semiconductor contact
ohmic contact
schottky contact
avalanche breakdown and zener breakdown
voltage regulator
zener diode
total charge
varactor diode
diffusion capacitance
junction potential
linear-graded junction
abrupt junction
reverse saturation current
temperature dependence
continuity equation
excess carrier
generation
recombination rate
quasi fermi level
conductivity
matthiessen’s rule
diffusion coefficient
mobility
scattering
drift
intrinsic carrier concentration
extrinsic semiconductor
intrinsic semiconductor
fermi level
current density
hall resistance
majority carrier mobility
majority carrier concentration
hall effect
indirect bandgap
hole
direct bandgap
nondegenerate semiconductor
cyclotron motion
quantum hall resistance
components of power plant
binary cycle plant
hot steam plant
dry steam plant
geothermal power plant
geothermal energy
double basin
single basin
barrage
neap wave
spring wave
tidal wave
shadow angle
inclination angle
doppler shift
equinox
lunar eclipse
sun transit outrage
solar eclipse
satellite tv
mesh topology
star topology
dama
pama
vsat
wind turbine generators
site-selection
wind farm
hawt
vawt
equation of motion
types of winds
beaufort scale
wind energy
two-dimensional electron gas
band noonparabolicity
multiple quantum well
superlattice
schrödinger equation
ben daniel duke boundary condition
broken-gap
staggered
straddling
homostructure
heterostructure
tdma frame structure
c/n in fdma
difference between fdma & tdma
sdma
tdma
cdma
fdma
gasification
anaerobic digestion
floating gas holder type
pyrolysis
fixed dome type
biofuel
biogas
biomass
cost estimation of p{v array
different solar inverters
components of pv array
absorption
scintillation
interference
faraday effect
rain attenuation
sidereal day
solar day
air mass
time correction factor
equation of time
hour angle
local solar time
evacuated tube collector
flat plate collector
pv systems
different types of solar cell
solar array
i-v characteristics of solar cell
operating principle of solar cell
regenerative
nonregenerative
transponder
command
tracking
telemetry
uplink and downlink
c/n ratio
cascaded arrangement
transmission equation
satellite communication

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Personal Information

Setor

Education

Sobre

Arpan Deyasi is presently working as Assistant Professor in the Department of ECE at RCCIIT , Kolkata, INDIA. He has 15 years of professional experience in academics and industry. His work spans around in the field of semiconductor nanostructure, semiconductor photonics. He has published more than 150 peer-reviewed research papers and edited 6 books. He is associated with different International and National Conferences in various aspects, and organized several technical events under the banner of IE(I) Kolkata section. He is reviewer of a few journals of repute. He is senior member of IEEE, secretary of IEEE Electron Device Society (Kolkata Chapter), MIE(I), MOSI, MIETE, LMISTE.

Marcadores

i-v characteristics
quantum well
transmission coefficient
depletion width
phase velocity
absorption coefficient
quantum efficiency
built-in potential
bulk semiconductor
density of states
effective mass
efficiency
characteristic impedance
phase constant
attenuation constant
wavelength
laplace's equation
laplacian
body effect
applications
characteristics
current-voltage characteristics
advantages
range
distributed bragg reflector
input impedance
equivalent circuit
poisson's equaiton
strong inversion
depletion
accumulation
quantum well laser
output power
semiconductor laser
responsivity
electric field
depletion capacitance
extrinsic fermi level
p-n junction
diffusion
fermi sphere
effective density of states
degenerate semiconductor
landau level
quantum hall effect
fill factor
solar cell
link design
piezoelectric potential
deformation potential
ballistic transport
carrier scattering
poor conductor
good conductor
skin effect
skin depth
wave impedance
energy
poynting's vector
relative directions
wave equation
propagation in conducting medium
propagation in dielectric medium
free space propagation
lorentz force
solenoidal property of magnetic field
biot-savart law
infinite current carrying sheet
magnetic field intensity
magnetic flux
integral form
differential form
ampere's law
solenoidal
magnetic vector potential
magnetic scalar potential
standing wave ratio
standing wave
reflection coefficient
quarter wave transformer
double stub
stub
quarter wave line
half wave line
full wave line
single stub
matched line
open circuit line
short circuit line
phase wavelength
distortionless transmission line
significance of qhe
criteria of qhe
quantized resistance
propagation constant
telegrapher's equation
distributed line
lumped line
transmission line
polarization charge density
atomic polarizability
ionic polarization
orientation polarization
electronic polarization
nonpolar dielectric
polar dielectric
capacitance of earth
spherical capacitor
cylindrical capacitor
parallel-plate capacitor
dipole moment
torque of dipole
electric field of dipole
potential of dipole
volume charge density
surface charge density
line charge density
uniqueness theorem
relaxation time
current continuity equation
equipotential surface
gauss' law
electrostatic energy
electric field intensity
electric flux density
electrostatic potential
superposition principle
coulomb's law
green's theorem
helmhotz's theorem
conservative field
gauss' divergence theorem
stoke's theorem
del operator
directional derivative
curl of vector
divergence of vector
gradient of scalar
vector transformation
scalar transformation
spherical coordinate
cylindrical coordinate
cartesian coordinate
coordinate transformation
classification of moletronics
diode using moletronics
switch using moletronics
application of moletronics
moletronics
molecular beam epitaxy
liquid phase epitaxy
vapor phase epitaxy
mocvd
chemical vapor deposition
ion plating
sputtering
thermal evaporation
physical vapor deposition
czocharlski process
types of memristor
characteristics of memristor
relation between fundamental parameters
hysteresis in memristor
application of memristor
working principle of memristor
memristance
memristor
fully depleted mosfet
partially depleted mosfet
tunnelfet
finfet
soi mosfet
quadruple gate mosfet
gate all around mosfet
double gate mosfet
triple gate mosfet
drawbacks
schottky barrier
coaxial
top-gate
bottom-up
classification of cntfet
comparison with mosfet
cntfet
channel length modulation
practical threshold voltage
ideal threshold voltage
minority carrier concentration
n-mosfet
p-mosfet
channel formation
depletion mosfet
enhancement mosfet
operating principle of set
criteria for single electron tunneling
criteria for coulomb blockade
coulomb gap energy
equivalent circuit of set
tunneling resistance
single electron transistor
drain current
tunneling rate
coulomb blockade
coulomb field
materials
sheet charge density
2deg
band engineering
modulation doping
easki & tsu equation
fermi fucntion
low electric field
low temperature
quantum unit of conductance
current
conductance
resonant tunneling
application
transconductance
transfer characteristics
static characteristics
small-signal parameters
features of jfet
pinch-off voltage
principle of jfet
grooved junction solar cell
thin film solar cell
schottky barrier solar cell
tandem solar cell
stimulated emission
stimulated absorption
spontaneous emission
radiative recombination
population inversion
nonradiative recombination
emission rate
einstein's relation
classification of radar
minimum range
pulse radar
mti radar
range equation
maximum unambiguous range
pulse repetition time
pulse repetition frequency
radar
single-hole directional coupler
two-hole directional coupler
magic tee
directional coupler
hybrid tee
h-plane tee
e-plane tee
faraday rotation isolator
gyrator
attenuator
circulator
isolator
application of hbt
master equation
calculation
band diagram of hbt
asymmetric potential for carriers
lower emitter doping
alternative solutions
drawbacks of bjt
hbt
polarization electro-optic modulator
phase electro-optic modulator
amplitude electro-optic modulator
pockels effect
acoustic wavelength
bragg regime
raman-nath regime
electro-optic modulator
acousto-optic modulator
electro-optic effect
acousto-optic effect
optical modulator
anisotropic etching
isotropic etching
wet etching
dry etching
etching
vane type variable
flap type variable
variable type attenuator
fixed type attenuator
microwave attenuator
formulation of s matrix
features of s matrix
transmission loss
reflection loss
insertion loss
return loss
lossless network
reciprocity
scattering matrix
image rejection
double balanced mixer
up and down conversions
single-balanced mixer
performance parameters
fundamental of mixer
mixer
passive phase shifter
active phase shifter
variable phase shifter
fixed phase shifter
digital phase shifter
analog phase shifter
distributed phase shifter
ferrite phase shifter
phase shifter
depletion mode mesfet
enhancement mode mesfet
advantages of gaas mesfet
max oscillation frequency
cut-off frequency
mesfet
read diode
transit-time effect
microwave generation
reach-through
plasma formation
avalanche shock-front
conversion efficiency
field profile
trapatt
baritt
impatt
projection printing
proximity printing
contact printing
negative photoresist
positive photoresist
photoresist
photolithography
importance of sio2
reaction controlled case
diffusion limited case
wet oxidation
dry oxidation
oxidation
choice of material
interconnect
contact
gate
metallization
non-mechanical switch
mechanical switch
v-groove splicing
fusion splicing
switch
splice
connector
lsa mode
quenched domain mode
delayed domain mode
transit time mode
gunn ocillator
negative differential conductivity
domain formation
intraband transfer
gunn diode
transferred electron device
transferred electron effect
existing problems with pic
smart pixel array
optical spectrum
objective of pic
photonic integrated circuit
types
features
waveguide
omnidirectional mirrors
microcavity
porous silicon
disadvantages
material aspect
cholesteric
smectic
nematic
phases of lcd
working principle
lcd
advantages of lidar
lidar platforms
components of lidar
operational theory of lidar
optical radar
lidar
noise equivalent power
snr
avalanche photodiode
pin diode
threshold voltage variation
mobility degradation
dielectric breakdown
channel-length modulation
surface scattering
hot electron
drain-induced-barrier-lowering
impact ionization
mosfet
short-channel
transfer matrix technique
wave-vector
propagation matrix method
quantum dot
quantum wire
nonparabolic dispersion relation
parabolic dispersion relation
conduction band
eigenstates
band nonparabolicity
interband transition
oscillator strength
intraband transition
drive-in
predeposition
standard deviation
projected range
fick's law
ion implantation
edge emitting led
surface emitting led
double heterojunction led
distributed feedback laser
condition for optical gain
double heterojunction laser
single heterojunction laser
lasing condition
multi-level laser
current desnity
threshold population inversion
inverted mode
normal mode
charge control model
ebers-moll model
emitter bias
voltage-divider bias
fixed bias
cb mode
cc mode
ce mode
early effect
punch-through
base-width modualtion
gain parameters
gain with source resistance
output admittance
power gain
voltage gain
current gain
hybrid parameters
bjt
equivalent circuit of ujt
applications of triggering devices
operation of triac
triac
diac
ujt
triggering
unstable region
scr
shockley diode
fundamental gate
universal gate
truth table
logic gates
cmos
point of inversion
biased
unbiased
inversion
mos
charge variation
surface charge
surface electric field
weak inversion
high-frequency curve
low-frequency curve
depletion approximation
capacitance
short-circuit current
open-circuit voltage
temperature
shunt resistance
series resistance
loss factor
photovoltaic effect
difference between laser and led
bulk laser
semiconductor led
avalanche photodetector
p-i-n photodetector
p-n photodetector
optical detector
tunneling current
thermionic current
depletion region
large bandgap
valley point
peak point
tunnel diode oscillator
negative differential resistance
tunneling criteria
tunnel mechanism
junction capacitance
maximum electric field
potential
barrier lowering
electrical properties
metal-semiconductor contact
ohmic contact
schottky contact
avalanche breakdown and zener breakdown
voltage regulator
zener diode
total charge
varactor diode
diffusion capacitance
junction potential
linear-graded junction
abrupt junction
reverse saturation current
temperature dependence
continuity equation
excess carrier
generation
recombination rate
quasi fermi level
conductivity
matthiessen’s rule
diffusion coefficient
mobility
scattering
drift
intrinsic carrier concentration
extrinsic semiconductor
intrinsic semiconductor
fermi level
current density
hall resistance
majority carrier mobility
majority carrier concentration
hall effect
indirect bandgap
hole
direct bandgap
nondegenerate semiconductor
cyclotron motion
quantum hall resistance
components of power plant
binary cycle plant
hot steam plant
dry steam plant
geothermal power plant
geothermal energy
double basin
single basin
barrage
neap wave
spring wave
tidal wave
shadow angle
inclination angle
doppler shift
equinox
lunar eclipse
sun transit outrage
solar eclipse
satellite tv
mesh topology
star topology
dama
pama
vsat
wind turbine generators
site-selection
wind farm
hawt
vawt
equation of motion
types of winds
beaufort scale
wind energy
two-dimensional electron gas
band noonparabolicity
multiple quantum well
superlattice
schrödinger equation
ben daniel duke boundary condition
broken-gap
staggered
straddling
homostructure
heterostructure
tdma frame structure
c/n in fdma
difference between fdma & tdma
sdma
tdma
cdma
fdma
gasification
anaerobic digestion
floating gas holder type
pyrolysis
fixed dome type
biofuel
biogas
biomass
cost estimation of p{v array
different solar inverters
components of pv array
absorption
scintillation
interference
faraday effect
rain attenuation
sidereal day
solar day
air mass
time correction factor
equation of time
hour angle
local solar time
evacuated tube collector
flat plate collector
pv systems
different types of solar cell
solar array
i-v characteristics of solar cell
operating principle of solar cell
regenerative
nonregenerative
transponder
command
tracking
telemetry
uplink and downlink
c/n ratio
cascaded arrangement
transmission equation
satellite communication

Ver mais