11. • Ratings of Amp & Volt very high
• Three Terminals : Base, Collector & Emitter
• Three configurations:
– CB
– CC
– CE
• Common Emitter configuration highly used
12. POWER MOSFET
Disadvantages of FET:
•High Drain Resistance
•Low input Impedance
•Slow operation
•MOSFET may be considered as
Advance FET
14. Two Types
– N Channel
– P Channel
• Main current flows from Drain to Source
• Control by Gate
15. Advantages
• Input Impedance very high
• Low output impedance
• Very high speed
• High Efficiency
• Low noise
• High Thermal Stability
• Widely used in industries
16. SCR
• Unidirectional device
• PNPN layer construction
• Three terminals: Anode, Cathode & Gate
• Conducts only when Gate pulse is applied
• If gate current increases, Firing angle will be
reduced hence more Output & Vice versa
• Used as Controlled switch to operate load at
any percentage
18. GTO
• Gate Turn off Thyristor
• Similar to SCR but with TURN OFF facility
• Can be TURNED ON with positive pulse at gate
• Can be TURNED OFF with High Negative pulse at
gate
20. LASCR
• Light Activated Silicon Controlled Rectifier
• Can be operated by LIGHT not with Current
• Similar characteristic like SCR
• As intensity of Light increases, SCR firing will
also increase and vice versa