mos device modelling

1. Lecture
On
Analog CMOS IC Design:
Unit-I
Presented By:
Dr. Neeraj Kumar Misra
Associate Professor
Department of Electronics and Communication Engineering,
Bharat Institute of Engineering and Technology, Hyderabad
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2. My Research Sketch
• Orchid: http://orcid.org/0000-0002-7907-0276
• Research Gate profile: https://www.researchgate.net/profile/Neeraj_Kumar_Misra
• Researcher ID: http://www.researcherid.com/rid/B-9442-2015
• Scopus: https://www.scopus.com/authid/detail.uri?authorId=56405207500
• Google Scholar: https://scholar.google.co.in/citations?user=_V5Af5kAAAAJ&hl=en

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5. Google Classroom Code: wamyhpr
Link to join
https://classroom.google.com/c/N
Dg4MjY3NTU3NTla?cjc=wamyhpr
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MOS Regions

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Sensitivity

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Voltage Reference

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Body Effect :

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Current Sink :
In order to work the transistor as a current sink the transistor should be operated in linear
region. Figure below shows the output characteristics of the NMOS transistor with showing
the current sink region.
From Figure, it can be seen that, if VDS is less than the gate overdrive voltage then the
transistor work as a current sink.

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Current Sources :
In order to use the MOSFET as a current source, we will have to operate it in saturation region.
According to the output characteristics of the MOSFET, the current in the saturation region is
constant. (See Figure below). Therefore if we operate the MOSFET in saturation region it will
work as a current source.
From Figure it can be seen that, if VDS is greater than the gate overdrive voltage then the
drain current flowing through the device is constant. This current is called as Saturation
current denoted by ISAT.

21. Thank You