Atomic Layer Deposition solutions for SiC Power Electronics
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Atomic Layer Deposition solutions for SiC Power Electronics Beneq provides Atomic Layer Deposition (ALD) equipment and materials for applications such as SiC MOSFETs. The presentation discusses the growing market for SiC power devices and how ALD can provide conformal thin films for gate dielectrics and surface passivation layers. Beneq's Transform batch ALD system enables both plasma-enhanced and thermal ALD processing for deposition of interfacial layers and thicker dielectric stacks. The Transform system offers high throughput and versatility for manufacturing of power electronics.
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Atomic Layer Deposition solutions for SiC Power Electronics
- 1. Atomic Layer Deposition solutions for SiC Power Electronics Integrated ALD passivation/gate dielectric stack for SiC MOSFET Mikko Söderlund – Semiconductor Business Unit April 19, 2023
- 2. 17.4.2023 – CONFIDENTIAL Company Introduction and More-than-Moore market focus Semiconductor ALD solutions and materials for SiC power devices Inflection in passivation/gate dielectric Introduction to ALD equipment Differentiated Beneq Transform® ALD cluster tool Outline
- 3. 17.4.2023 – CONFIDENTIAL Semiconductor ALD products Beneq Transform® and C2 for the up to 200 mm MtM market Beneq Transform® 300 & C3 for the 300 mm MtM market Beneq Prodigy™ for Compound Semi and MEMS markets 200 mm and smaller wafers 300 mm wafers Prodigy™ Transform® Transform® Lite Transform® 300
- 4. 17.4.2023 Semiconductor Markets we serve Power devices Image sensors R&D µOLED Advanced packaging RF Ics, Filters More-than-Moore device fabrication: ✓ Power devices ✓ RF Filter devices ✓ RF ICs ✓ CMOS image sensors ✓ µOLED ✓ LED, µLED, EEL, VCSEL, detectors and Si photonics ✓ MEMS, sensors and actuators ✓ Advanced Packaging (TSV, CSP) ✓ Smart Power ✓ Microcontroller and e-NVM ✓ RF, Analog and mixed signal 17.4.2023 – CONFIDENTIAL 300 mm * This presentation
- 5. 17.4.2023 – CONFIDENTIAL BENEQ ALD Solutions for Power Devices Market segments Gate Dielectric (SiO2, High-k) Surface passivation Nucleation & seed, doping Metal & TCO Final Passivation (moisture barrier) Trench MOSFET ✓ ✓ ✓ SJ MOSFET ✓ ✓ ✓ IGBT ✓ ✓ ✓ SiC MOSFET & Trench MOSFET ✓ ✓ ✓ ✓ GaN HEMT ✓ ✓ ✓ ✓ ✓ Vertical GaN ✓ ✓ ✓ ✓ Plasma enhanced single wafer and/or sequential PEALD + thermal batch processing
- 7. 17.4.2023 – CONFIDENTIAL SiC market drivers - devices and modules • 800 V battery systems enable fast charging and accelerate penetration of SiC devices and modules in BEV courtesy to their advantage over Si IGBT i.e. higher performance gain per unit cost for 1200 V SiC. • 1200 V SiC devices, in hybrid and full SiC modules, are supporting the raise of renewable energy capacity. 2021 device market 2021-2027 CAGR 685 M$ 39 % 37 M$ 24 % 145 M$ 19 % 78 M$ 16 % Power SiC 2022 | www.yole.fr| ©2022
- 8. 17.4.2023 – CONFIDENTIAL SiC Power devices market forecast and market share • The SiC device market is expected to reach $6.1B by 2027. SiC has strongly penetrated the automotive market, which will represent more than 75% of the total SiC device market in 2027. • Despite the pandemic and semiconductor shortage in the past 2 years, SiC ramp ups are ongoing. EV/HEV is taking off, along with the transition from 400V to 800V battery systems. • The global SiC device market grew 57% in 2020-2021. Some major device suppliers performed at such rate. Power SiC 2022 | www.yole.fr| ©2022
- 9. 17.4.2023 – CONFIDENTIAL Power SiC 2022 | www.yole.fr| ©2022 SiC MOSFET product development • Since market launch of SiC MOSFET early 2021, device manufacturers have released multiple generations of devices to support qualification in various applications. • Driven by lower ON resistance and smaller devices, Trench SiC MOSFET R&D started about 10 years ago.
- 10. 17/04/2023 ALD inflection for SiC MOSFET Beneq Confidential
- 11. 17.4.2023 – CONFIDENTIAL BENEQ ALD roadmap for SiC MOSFET T. Kimoto, Performance Improvement and Reliability Physics in SiC MOSFETs, IRPS 2022, Kyoto University Nitridation anneal post thermal oxidation Power SiC 2022 | www.yole.fr| ©2022 Reduced Ron Conformality & film quality BENEQ ALD roadmap Thermal ALD SiO2 w. anneal Plasma / thermal ALD SiO2 w. anneal Interface preclean and nitridation w. reduced anneal Introduce High k to replace SiO2 for higher reliability
- 12. Materials & process solutions for SiC MOSFET 17.4.2023 – CONFIDENTIAL ✓ Optional** PEALD Nitride interfacial layer (AlN or Si3N4) • Further passivation of the SiC surface by nitridation • Effectively blocks oxygen to the SiC surface, leading to reduced Dit ✓ Deposition of gate dielectric (SiO2, High-k or SiO2/High-k) • Provide necessary performance as gate dielectric • High-k to improve reliability of the gate dielectric • Al2O3 or SiO2 acts as a capping material to prevent oxidation of the surface ✓ In-situ* plasma preclean to remove surface damage and/or provide surface nitridation of the surface • Remove cristal disorder at the surface SiC, Carbon clusters, caused by oxidation of SiC • Nitridation for passivation of SiC surface • Provide high quality interface for low density of interface states T. Kimoto et al. IEDM 2021 * In-situ to the PEALD process module ** alternative to NO Anneal
- 13. Transform® Batch ALD performance – SiO2 Performance Value Breakdown (MV/cm) > 9.5 Leakage current density, @ 5 MV/cm (A/cm2) ~ 1 x 10-8 Refractive index @ 633 nm 1.45 Density (g/cm3) 2 Current vs. Electric Field Process temperature 300°C Wafer size 200mm WiW: ~ 0.6%, 1σ Wt: ~ 0.2%, 1σ BtB: ~ 0.26%, 1σ Throughput: 12 WPH @50 nm Pre-clean/treat and PEALD SiN is available on the single wafer plasma module 17.4.2023 – CONFIDENTIAL 25-wafer batch ToF-ERDA profile of thermal SiO2 As deposited thermal SiO2 O: 61.0 ± 0.6 at-% Si: 29.6 ± 0.5 at-% H: 9.4 ± 0.6 at-% C: <0.2 at-% (As deposited PEALD SiO2) O: 62.8 ± 0.6 at-% Si: 31.3 ± 0.5 at-% H: 5.8 ± 0.5 at-% C: <0.2 at-%
- 14. SiO2 ALD / anneal integration - current status 17.4.2023 – CONFIDENTIAL Before annealing After annealing • Low hysteresis and fixed charges are obtained after anneal for both thermal and plasma ALD SiO2 • Plasma ALD SiO2 better control of the interface/trapped charges and will benefit of in-situ plasma pre-clean technology
- 15. 17/04/2023 Beneq ALD equipment for the Wafer Fabs Beneq Confidential
- 16. 17/04/2023 • Highly versatile cluster platform supporting a wide range of material and applications • Breakthrough in throughput with pre-heating and flow optimized mini-batch reactor design • Differentiated & patented sequential ALD processing combining plasma enhanced and thermal batch ALD for “best of both” worlds capability • Beneq Transform has become 1st choice for Tier1 IDM’s, Foundries and RTOs in Power, RF, MicroLED/Photonics, CIS, MEMS and Advanced Packaging Introducing Beneq Transform ® Beneq Confidential Versatile platform dedicated to More-than-Moore device fabrication Beneq Transform is your engine for the SiC materials revolution!
- 17. 17/04/2023 Beneq Transform© enables sequential processing For best-of-both-worlds plasma enhanced and thermal ALD processing capability 2 Pre-heating module ✓ Productivity booster, > 40 % higher WPH ✓ Remove/outgas trace water and organics 2 3 Plasma-enhanced ALD process module ✓ Flexible single-wafer plasma chamber, direct or remote CCP type ✓ In-situ plasma pre-treatment/surface activation for reduced Dit ✓ For deposition of thin (e.g. 3-5 nm SiO2, AlN, SiN) interfacial layer (IL) 3 4 Thermal batch process module ✓ Receives wafers after SW PEALD process without air-break (in-vacuum transfer) ✓ Up to 25 wafer batch size ✓ For deposition of thicker dielectric layers e.g. 50-100 nm SiO2, or high-k Al2O3, HfO2…. 4 1 Load-lock ✓ Two load-locks, each for 25 wafer lot size 1 1 5 Cooling module ✓ For rapid cooling of wafers to < 60 C 5 3rd retrofit process module ✓ For example, 2nd PEALD chamber for additional capacity ✓ Or additional process capability such as Schottky contact, Final passivation, … High (double-digit ) WPH reached for pre-clean/IL/dielectric stack Beneq Confidential
- 18. to customers’ developing needs. Add value as a caring community. Make it together continuously and step by step. Keep improving encouraging others to learn, too. Stay curious To fulfill our mission, we: www.beneq.com | info@beneq.com | +358 9 7599 530 mikko.soderlund@beneq.com Beneq is the home of atomic layer deposition. In 1984, we established the world’s first industrial production using ALD. Today, we lead the market with products for R&D (TFS 200, TFS 500, R2), semiconductor device fabrication (Transform®, Transform® 300, and ProdigyTM), 3D and batch production (P400A, P800, P1500), ultra-fast spatial ALD (C2R), and roll-to-roll ALD (Genesis).