Original IGBT RJH60D3DPP -M0 RJH60D3 600V 17A TO-220 New

R07DS0162EJ0400 Rev.4.00 Page 1 of 9
Apr 19, 2012
Preliminary Datasheet
RJH60D3DPP-M0
600V - 17A - IGBT
Application: Inverter
Features
 Short circuit withstand time (5 s typ.)
 Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode (100 ns typ.) in one package
 Trench gate and thin wafer technology
 High speed switching
tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C)
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
1
2 3
1. Gate
2. Collector
3. Emitter
C
G
E
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage / diode reverse voltage VCES / VR 600 V
Gate to emitter voltage VGES ±30 V
Tc = 25°C IC 35 ACollector current
Tc = 100°C IC 17 A
Collector peak current ic(peak)
Note1
70 A
Collector to emitter diode forward current iDF 17 A
Collector to emitter diode forward peak current iDF(peak)
Note1
70 A
Collector dissipation PC
Note2
40 W
Junction to case thermal resistance (IGBT) j-c
Note2
3.15 °C/ W
Junction to case thermal resistance (Diode) j-cd
Note2
4.9 °C/ W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
R07DS0162EJ0400
Rev.4.00
Apr 19, 2012

RJH60D3DPP-M0 Preliminary
R07DS0162EJ0400 Rev.4.00 Page 2 of 9
Apr 19, 2012
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Collector to emitter breakdown
voltage
VBR(CES) 600 — — V IC =10 A, VGE = 0
Zero gate voltage collector current
/ Diode reverse current
ICES / IR — — 5 A VCE = 600 V, VGE = 0
Gate to emitter leak current IGES — — ±1 A VGE = ±30 V, VCE = 0
Gate to emitter cutoff voltage VGE(off) 4.0 — 6.0 V VCE = 10 V, IC = 1 mA
VCE(sat) — 1.6 2.2 V IC = 17 A, VGE = 15 V
Note3
Collector to emitter saturation voltage
VCE(sat) — 2.0 — V IC = 35 A, VGE = 15 V
Note3
Input capacitance Cies — 900 — pF
Output capacitance Coes — 60 — pF
Reveres transfer capacitance Cres — 25 — pF
VCE = 25 V
VGE = 0
f = 1 MHz
Total gate charge Qg — 37 — nC
Gate to emitter charge Qge — 6.5 — nC
Gate to collector charge Qgc — 15 — nC
VGE = 15 V
VCE = 300 V
IC = 17 A
Turn-on delay time td(on) — 35 — ns
Rise time tr — 16 — ns
Turn-off delay time td(off) — 80 — ns
Fall time tf — 70 — ns
Turn-on energy Eon — 0.20 — mJ
Turn-off energy Eoff — 0.21 — mJ
Total switching energy Etotal — 0.41 — mJ
VCC = 300 V
VGE = 15 V
IC = 17 A
Rg = 5 
Inductive load
Short circuit withstand time tsc 3.0 5.0 — s VCC  360 V, VGE = 15 V
FRD Forward voltage VF — 1.3 1.7 V IF = 17 A
Note3
FRD reverse recovery time trr — 100 — ns
FRD reverse recovery charge Qrr — 0.15 — C
FRD peak reverse recovery current Irr — 4.2 — A
IF = 17 A
diF/dt = 100 A/s
Notes: 3. Pulse test.

R07DS0162EJ0400 Rev.4.00 Page 3 of 9
Apr 19, 2012
Main Characteristics
0 1 2 3 54
0
70
60
50
40
30
20
10
IGBT Output Characteristics (Typical) IGBT Output Characteristics (Typical)
0 1 2 3 54
Tc = 25°C
Pulse Test
Maximum DC Collector Current vs.
Case Temperature
40
30
20
10
0
0 50 10025 75 150125 1750 50 10025 75 150125 175
Power Dissipation vs.
Case Temperature
VGE = 8 V
10 V
12 V15 V
18 V
18 V
50
40
30
20
10
0
Turn-off SOA
0 200 400 600 800
80
60
40
20
0
0
70
60
50
40
30
20
10 Tc = 150°C
Pulse Test
10 V
12 V
CollectorCurrentIC(A)
Collector to Emitter Voltage VCE (V)
Maximum Safe Operation Area
1000
100
1
10
0.1
1 10010 1000
Tc = 25°C
Single pulse
100
μs
PW
=
10
μs
Case Temperature Tc (°C)
CollectorDissipationPc(W)
VGE = 8 V
15 V

R07DS0162EJ0400 Rev.4.00 Page 4 of 9
Apr 19, 2012
0
70
60
50
40
30
20
10
Transfer Characteristics (Typical)
0 4 8 12 2016
VCE = 10 V
Pulse Test
Tc = 25°C
150°C
Gate to Emitter Voltage VGE (V)
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
CollectortoEmitterSatularionVoltage
VCE(sat)(V)
6
5
4
3
2
1
4 8 12 2016
IC = 17 A
35 A
Tc = 150°C
Pulse Test
5
4
3
2
1
4 8 12 2016
IC = 17 A
35 A
Tc = 25°C
Pulse Test
CollectortoEmitterSatularionVoltage
VCE(sat)(V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
CollectortoEmitterSaturationVoltage
VCE(sat)(V)
Case Temparature Tc (°C)
−25 0 25 75 12550 100 150
1.2
2.0
1.6
2.4
2.8
VGE = 15 V
Pulse Test
17 A
8.5 A
IC = 35 A
10
8
6
4
2
0
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
−25 0 25 75 12550 100 150
GatetoEmitterCutoffVoltageVGE(off)(V)
VCE = 10 V
Pulse Test
Case Temparature Tc (°C)
1 mA
IC = 10 mA
10
8
6
4
2
0
Frequency Characteristics (Typical)
CollectorCurrentIC(RSM)(A)
Frequency f (kHz)
1 10010 1000
Tj = 125°C
Tc = 90°C
VCE = 400 V
VGE = 15 V
Rg = 5 Ω
duty = 50%
0
Collector current wave
(Square wave)

R07DS0162EJ0400 Rev.4.00 Page 5 of 9
Apr 19, 2012
1 10010 1 10010
1 10010 1 10010
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
SwithingEnergyLossesE(mJ)
SwitchingTimest(ns)
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2)
Switching Characteristics (Typical) (3) Switching Characteristics (Typical) (4)
Collector Current IC (A)
(Inductive load)
SwitchingTimest(ns)
0.1
1
0.0110
100
1000
td(off)
td(on)
tf
tr
VCC = 300 V, VGE = 15 V
IC = 17 A, Tc = 150°C
VCC = 300 V, VGE = 15 V
IC = 17 A, Tc = 25°C
Eoff
Eon
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
10
1
0.1
0.01
Eoff
Eon
1
100
10
1000
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
td(off)
td(on)
tf
tr
10
100
1000
5025 15075 125100
Switching Characteristics (Typical) (5)
td(on)
(Inductive load)
SwitchingTimest(ns)
VCC = 300 V, VGE = 15 V
IC = 17 A, Rg = 5 Ω
tf
td(off)
tr
0.01
0.1
1
5025 15075 125100
(Inductive load)
Switching Characteristics (Typical) (6)
Eoff
Eon
VCC = 300 V, VGE = 15 V
IC =17 A, Rg = 5 Ω

R07DS0162EJ0400 Rev.4.00 Page 6 of 9
Apr 19, 2012
Diode Current Slope diF/dt (A/μs)
ReverseRecoveryTimetrr(ns)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
ReverseRecoveryCurrentIrr(A)
Reverse Recovery Current vs.
ReverseRecoveryChargeQrr(μC)
Reverse Recovery Charge vs.
8
4
16
12
0
0 40 80 200120 160
VCC = 300 V
IF = 17 A
Tc = 150°C
25°C
C-E Diode Forward Voltage VCEF (V)
Forward Current vs. Forward Voltage (Typical)
ForwardCurrentIF(A)
CapacitanceC(pF)
1
10
100
1000
10000
0 10050 150 200 250 300
Cies
Coes
Cres
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
8 16 24 32 40
VGE
VCE
VGE = 0 V
f = 1 MHz
Tc = 25°C
CollectortoEmitterVoltageVCE(V)
GatetoEmitterVoltageVGE(V)
VCC = 300 V
IC = 17 A
Tc = 25°C
0
70
60
50
40
30
20
10
0 1 2 43
Tc = 25°C
150°C
VGE = 0 V
Pulse Test
100
50
300
250
200
150
0
0 40 80 200120 160
Tc = 150°C
25°C
VCC = 300 V
IF = 17 A
0 40 80 200120 160
VCC = 300 V
IF = 17 A
1.0
0.8
0.6
0.4
0.2
0
Tc = 150°C
25°C

R07DS0162EJ0400 Rev.4.00 Page 7 of 9
Apr 19, 2012
0.01
1
0.1
10
100 μ 1 m 10 m 100 m 1 10
PDM
PW
T
D =
PW
T
θj – c(t) = γs (t) • θj – c
θj – c = 4.9°C/W, Tc = 25°C
0.2
0.1
0.5
D = 1
Tc = 25°C
Pulse Width PW (s)
NormalizedTransientThermalImpedanceγs(t)
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
Pulse Width PW (s)
NormalizedTransientThermalImpedanceγs(t)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
0.01
0.1
10
1
100 μ 1 m 10 m 100 m 1 10
100
100
PDM
PW
T
D =
PW
T
θj – c(t) = γs (t) • θj – c
θj – c = 3.15°C/W, Tc = 25°C
Tc = 25°C
0.05
0.02
0.05
0.2
0.1
0.5
D = 1
0.01
1 shot pulse
0.01
0.02
1 shot pulse

R07DS0162EJ0400 Rev.4.00 Page 8 of 9
Apr 19, 2012
Switching Time Test Circuit
Diode Reverse Recovery Time Test Circuit
Waveform
Waveform
Diode clamp
D.U.T
D.U.T
Rg
L
VCC
VCC
trr
Irr
diF/dt
0.9 Irr
IF
IF
Rg
td(off) td(on)tf tr
90%
90% 90%
10%
10%10%
VGE
IC
0.5 Irr
L
0

R07DS0162EJ0400 Rev.4.00 Page 9 of 9
Apr 19, 2012
Package Dimension
Unit: mm
Previous Code
PRSS0003AF-A TO-220FL
MASS[Typ.]
1.5g⎯
RENESAS CodeJEITA Package CodePackage Name
TO-220FL
3.6±0.3
15.0±0.312.5±0.5
10.0 ± 0.3
6.5±0.3
φ 3.2 ± 0.2
0.75 ± 0.15
1.15 ± 0.2
2.54 ± 0.252.54 ± 0.25
2.6±0.2
4.5±0.2
0.40 ± 0.15
2.8 ± 0.2
1.15 ± 0.2
3.0±0.3
Ordering Information
Orderable Part No. Quantity Shipping Container
RJH60D3DPP-M0#T2 600 pcs Box (Tube)

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