Micro Electronics Lab Presentation

1. CHEMICAL VAPOR
DEPOSITION
Micro Electronics
Lab Presentation

2. TEAM MEMBERS
1. Aroosa Amanat 1932-FET/BSEE/F-12
2. Saba Ghafoor 1933-FET/BSEE/F-12
3. Sheher Bano 1951-FET/BSEE/F-12
4. Maryam Shaheen 1964-FET/BSEE/F-12
PRESENTED TO:
Engr.FARYAL.
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3. CONTENTS
What is CVD
Apparatus in CVD
Process of CVD
Major Types of CVD
Advantages of CVD
Applications of CVD
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4. WHAT IS CVD?
CVD is the formation of a non-volatile solid film on a substrate by the
reaction of vapor phase chemicals (reactants) that contain the required
constituents.
During this process, volatile by-products are also produced, which are
removed by gas flow through the reaction chamber.
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5. APPARATUS
Gas delivery system – For the supply of precursors to the reactor chamber
Reactor chamber – Chamber within which deposition takes place
Substrate loading mechanism – A system for introducing and removing substrates,
mandrels etc.
Energy source – Provide the energy/heat that is required to get the precursors to
react/decompose.
Vacuum system – A system for removal of all other gaseous species other than those
required for the reaction/deposition.
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6. APPARATUS CONT..
Exhaust system – System for removal of volatile by-products from the
reaction chamber.
Exhaust treatment systems – In some instances, exhaust gases may not be
suitable for release into the atmosphere and may require treatment or
conversion to safe/harmless compounds.
Process control equipment – Gauges, controls etc.. to monitor process
parameters such as pressure, temperature and time. Alarms and safety
devices would also be included in this category.
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7. CVD PROCESS
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Transport of
reactants by
forced
convection to the
deposition region
Transport of
reactants by
diffusion from
the main gas
stream to the
substrate
surface.
Adsorption of
reactants in the
wafer (substrate)
surface.
Chemical
decomposition
and other surface
reactions take
place.
Desorption of
by-products
from the surface
Transport of by-
products by
diffusion
Transport of by-
products by
forced
convection away
from the
deposition
region.

8. SCHEMATIC DIAGRAM-THE
STEPS INVOLVED IN CVD
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Susceptor
Wafer
1
2
3 4 5
6
7
Gas stream

9. REACTION RATE MAY BE
LIMITED BY:
•Gas transport to/from surface.
•Surface chemical reaction rate that depends
strongly on temperature
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10. MAJOR TYPES OF CVD
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CVD’s are classified into two types on the basis of Operating
Pressure.
1. Atmospheric Pressure CVD
2. Low Pressure CVD
 Plasma Enhanced CVD
Photochemical Vapor Deposition
Thermal CVD

11. ATMOSPHERIC PRESSURE
CHEMICAL
VAPOUR DEPOSITION
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CASE 1 : HIGH TEMPERATURE
This process is used to deposit Silicon and compound films or hard
metallurgical coatings like Titanium
Carbide and Titanium Nitride.
CASE 2 : LOW TEMPERATURE
Many insulating film layers such as Silicon dioxide need to be
deposited at low temperatures for
effective deposition.

12. APCVD …
High deposition rate.
Low uniformity
Moderate film quality
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13. LOW PRESSURE CVD
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The deposition of Silicon carbide thin film is performed
using low pressure CVD of Dichlorosilane / Acetylene /
Hydrogen reaction system.
The Silicon carbide film deposited at three different
temperatures has three different properties.

14. PLASMA ENHANCED CVD
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PECVD is a process used to deposit thin films from a gas state
(vapor) to a solid state on a substrate.
Chemical reactions are involved in the process, which occur after
creation of a plasma of the reacting gases.
The plasma is generally created by RF (AC) frequency or DC
discharge between two electrodes, the space between which is filled
with the reacting gases.
The helping hand of the Plasma helps in increasing the film quality
at low temperature and pressure.
Some of the desirable properties of PECVD films are good adhesion,
low pinhole density and uniformity.

15. REACTORS USED IN PECVD
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MET
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REINBERG TYPE REACTOR (DIRECT):
Reactants, by-products, substrates and plasma are in the same
space.
Capacitive-coupled Radio Frequency plasma.
Rotating substrates are present.
DOWNSTREAM REACTOR (INDIRECT):
Plasma is generated in a separate chamber and is
pumped into the deposition chamber.
Allows better control of purity and film quality
when compared to the Direct type.

16. PHOTOCHEMICAL VAPOUR
DEPOSITION
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Al thin films are deposited via photochemical vapour deposition on catalytic
layers of Ti, TiO2, and Pd, using dimethyl aluminum hydride.
Deposition is carried out at low gas pressures.
Of these three layers Ti is so effective as a catalyst that the Al films are
thermally deposited even at a low substrate temperature of 60°C with a
growth rate of 0.5 nm/min.
The UV light generated by a deuterium lamp helped increase the growth
rates.

17. THERMAL CVD
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In thermal CVD process, temperatures as high as 2000 degree Celsius is
needed to deposit the compounds.
There are two basic types of reactors for thermal CVD.
1. Hot wall reactor
2. Cold wall reactor
A hot wall reactor is an isothermal surface into which
the substrates are placed. Since the whole chamber is
heated, precise temperature control can be achieved
by designing the furnace accordingly.
 The deposition takes place on the area of the highest temperature, since
CVD reactions are generally endothermic.

18. ADVANTAGES OF CHEMICAL
VAPOUR DEPOSITION
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High growth rates possible, good reproducibility.
Can deposit materials which are hard to evaporate.
Can grow epitaxial films.
Versatile –any element or compound can be
deposited.
High Purity can be obtained.
High Density – nearly 100% of theoretical value.
Material Formation well below the melting point
Economical in production, since many parts can
be coated at the same time.

19. APPLICATIONS OF
CHEMICAL VAPOUR
DEPOSITION
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CVD has applications across a wide range of industries such as:
Coatings – Coatings for a variety of applications such as wear
resistance, corrosion resistance, high temperature protection,
erosion protection and combinations thereof.
Semiconductors and related devices – Integrated circuits, sensors
and optoelectronic devices
Dense structural parts – CVD can be used to produce components
that are difficult or uneconomical to produce using conventional
fabrication techniques. Dense parts produced via CVD are generally
thin walled and maybe deposited onto a mandrel or former.

20. CONTINUED..
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 Optical Fibres – For telecommunications.
Composites – Preforms can be infiltrated using CVD techniques to
produce ceramic matrix composites such as carbon-carbon, carbon-
silicon carbide and silicon carbide-silicon carbide composites. This
process is sometimes called chemical vapour infiltration or CVI.
Powder production – Production of novel powders and fibres
Catalysts
Nanomachines

21. DISADVANTAGES
High process temperatures.
Complex processes, toxic and corrosive gasses.
Film may not be pure
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