Rohm SCH2080KE SiC Transistor 2nd Generation SiC MOSFET with SiC-SBD In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3. The SCH2080KE from ROHM Semiconductor is a 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET. With a breakdown voltage of 1200V for a current of 28A (100°C), the SCH2080KE offers a very low on-resistance (80mΩ), a fast switching speed and a fast reverse recovery. This MOSFET is already integrated in power modules by Danfoss for PV inverters and in train engine modules co-developed with Alstom. Rohm SiC MOSFET offers a second source to the CREE SiC MOSFET. System Plus Consulting is publishing a reverse costing report on the SCH2080KE. Based on a complete teardown analysis, the report provides an estimation of the production cost of the SCH2080KE package, SiC MOSFET Transistor and Schottky Barrier Diode. More information on that report at http://www.i-micronews.com/reports/Rohm-SCH2080KE-SiC-Transistor-2nd-Generation-SiC-MOSFET-SiC/12/432/

1. DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems. The given values are realistic estimates which do not
bind System Plus Consulting nor the manufacturers quoted in the report. System Plus Consulting is in no case responsible for the consequences related to the use which is made of the contents of this report. The
quoted trademarks are property of their owners.
© 2014 by SYSTEM PLUS CONSULTING, all rights reserved. 1
Electronic Costing & Technology Experts
www.systemplus.fr
21 rue la Nouë Bras de Fer
44200 Nantes – France Phone : +33 (0) 240 180 916 email : info@systemplus.fr
March 2014 – Version 1 – Written by Sylvain Hallereau

2. Rohm SCH2080kE– Power SiC Transistor
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© 2014 by SYSTEM PLUS CONSULTING, all rights reserved. 2
Glossary
1. Overview / Introduction 4
– Executive Summary
– Reverse Costing Methodology
2. Companies Profile 9
– Rohm Profile
– SiCrystal Profil
3. SCH2080KE Characteristics 12
– SCH2080KE Characteristics
4. SCH2080KE Physical Analysis 15
– Physical Analysis Methodology
– Package Views & Dimensions
– Leadframe
MOSFET
– Die View, Dimensions & Marking
– Guard Ring
– Delayering
– Metal Layers
– Source and Gate
– Cross-Section
– Source Cross-Section
– Substrate and Epitaxy Layers
– Backside
– MOSFET Characteristics
Diode
– Die View, Dimensions & Marking
– Guard Ring
– Cross-Section
– Substrate and Epitaxy Layers
– Backside
– Diode Characteristics
5. Manufacturing Process Flow 55
– Global Overview
– MOSFET Front end Unit
– MOSFET Tests Unit
– Transistor Process Flow
– Diode Front end Unit
– Diode Process Flow
6. Cost Analysis 68
– Synthesis of the cost analysis
– Main steps of economic analysis
MOSFET
– Yields Hypotheses
– MOSFET Epitaxy Cost
– MOSFET Front-End Cost
– MOSFET Wafer Cost
– MOSFET Cost per process steps
– MOSFET : Equipment Cost per Family
– MOSFET : Material Cost per Family
– MOSFET : Back-End : Probe and
Diode
SCH2080KE
– SCH2080KE - Package
– SCH2080KE - Final Test
7. Price Estimation 95
Contact 99

3. Rohm SCH2080kE– Power SiC Transistor
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© 2014 by SYSTEM PLUS CONSULTING, all rights reserved. 3
• This full Reverse Costing study has been conducted in order to give insight on technology data,
manufacturing cost of the N-channel SiC power MOSFET 1200V and the SiC-SBD used in SCH2080KE
from Rohm.
• The SCH2080KE package contains 1x SiC MOSFET 1200V + 1x SiC Schottky Barrier Diode. The
SCH2080KE drives 40A at 25°C for 80 mohms and 28A at 100°C.
• The component offers a full integration of a MOSFET and a free wheeling diode in one package.
• The component is provided in a standard 3-pins TO-247 package, compatible with SMD and
through-hole process.
• The MOSFET has a current density of 2.2A per mm² at 100°C under 1200V.
• The power component is designed and manufactured by Rohm.
• The manufacturing of the MOSFET and Diode is assumed to take place in a 100mm wafer fab
unit in Japan
• The packaging and final test are realized by Rohm Mechatec and are assumed to take place in
a plant in Philippines.
• The component can be used for :
• Solar inverters (The SiC MOSFET die has been observed in the power module of the PV
inverter 20K from Refusol.)
• DC/DC converters
• Induction heating
• Motor drives

4. Rohm SCH2080kE– Power SiC Transistor
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© 2014 by SYSTEM PLUS CONSULTING, all rights reserved. 4
The reverse costing analysis is conducted in 3 phases:
Teardown
analysis
• Package is analyzed and measured
• The dies are extracted in order to get overall data: dimensions, main blocks, pad number and pin
out, die marking
• Setup of the manufacturing process.
Costing
analysis
• Setup of the manufacturing environment
• Cost simulation of the process steps
Selling price
analysis
• Supply chain analysis
• Analysis of the selling price

5. Rohm SCH2080kE– Power SiC Transistor
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© 2014 by SYSTEM PLUS CONSULTING, all rights reserved. 5
• The SiC MOSFET is assembled in a TO247
package.
• Dimensions : 41mm x 15.9mm x 5mm
• Marking Code :
Rohm
SCH2080KE
13 19
Module top view Package back view
TO247 exposed leadframe to enhance the
heat dissipation.
Lateral view

6. Rohm SCH2080kE– Power SiC Transistor
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© 2014 by SYSTEM PLUS CONSULTING, all rights reserved. 6
SiC MOSFET
SiC Diode
Leadframe
Cross-Section
Optical view : cross section of the package.
Optical view : leadframe detail
The thickness of the solder is not constant.
MOSFET between XXµm at XXµm.
Diode between XXµm at XXµm

7. Rohm SCH2080kE– Power SiC Transistor
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© 2014 by SYSTEM PLUS CONSULTING, all rights reserved. 7
• Die size : xxmm x xxmm (xsq mm)
• Active area: xxsq mm (xx% of the area)
• Source pad:
- Size: xxmm x xxmm
•Gate pad:
- Size: xxsq mm
• Die thickness: xxµm
Solder
xxmm
The polyimide on the periphery has been
etched with the plastic of the package
Optical views : Die
xxmm

8. Rohm SCH2080kE– Power SiC Transistor
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© 2014 by SYSTEM PLUS CONSULTING, all rights reserved. 8
• Die size : xxmm x xxmm (xxsq mm)
• Active area: xxsq mm (xx% of the area)
• Die thickness: xxµm
xxmm
The polyimide on the periphery has been
etched with the plastic of the package
Optical views : Die
xxmm
Cross-Section : SEM view
xxµm

9. Rohm SCH2080kE– Power SiC Transistor
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© 2014 by SYSTEM PLUS CONSULTING, all rights reserved. 9
Drawing not to Scale

10. Rohm SCH2080kE– Power SiC Transistor
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© 2014 by SYSTEM PLUS CONSULTING, all rights reserved. 10
• The front-end cost ranges from $xx to $xx
according to yield variations.
• The high cost of the wafer explain the portion
of the manufacturing cost is due to yield
losses in the cost.
• The manufacturing yield is between xx% and
xx% in 2014

11. Rohm SCH2080kE– Power SiC Transistor
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© 2014 by SYSTEM PLUS CONSULTING, all rights reserved. 11
• The Diode Component Cost ranges from $xx
to $xx according to yield variations.
• The SiC Die manufacturing represents xx% of
the component cost, medium yield.
• Probe test, dicing and scrap account for xx%
of the component cost.

12. Rohm SCH2080kE– Power SiC Transistor
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© 2014 by SYSTEM PLUS CONSULTING, all rights reserved. 12
• The SCH2080KE Component cost ranges from
$xx to $xx according to yield variations.
• The SiC Dies manufacturing represents xx% of
the component cost.
• The packaging represents xx% of the
component cost.
• Final test and yield losses account for xx% of
the component cost.

13. Rohm SCH2080kE– Power SiC Transistor
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© 2014 by SYSTEM PLUS CONSULTING, all rights reserved. 13
Reverse costing analysis represents the best cost/price evaluation given the publically available
data, and estimates completed by industry experts.
Given the hypothesis presented in this analysis, the major sources of correction would lead to a
+/- 10% correction on the manufacturing cost (if all parameters are cumulated).
These results are open for discussion. We can reevaluate this circuit with your information.
Please contact us:
USA Office
• Jeff Edwards, Sales Associate, Yole Inc., Cell: (972) 333 0986- Email: edwards@yole.fr
Japan Office
• For custom research: Yutaka Katano, General Manager, Yole Japan & President, Yole K.K.
Phone: (81) 362 693 457 - Cell : (81) 80 3440 6466 - Fax: (81) 362 693 448 - Email: katano@yole.fr
• For reports business: Takashi Onozawa, Sales Asia & General Manager, Yole K.K.
Email: onozawa@yole.fr
European Office
• Yole Développement Headquarter, France: David Jourdan, Sales Coordination & Customer Service, Tel: +33 472 83 01 90, Email:
jourdan@yole.fr
Korea Office
• Hailey Yang, Business Development Manager, Phone : (82) 2 2010 883 - Cell: (82) 10 4097 5810
- Fax: (82) 2 2010 8899 – Email: yang@yole.fr