GaN power devices: a promising, fast-growing market A GROWING MARKET WITH LOTS OF EXCITING NEWS IN 2015 - 2016 2015 - 2016 has been an exciting year for the gallium nitride (GaN) power business. Up until late 2014, 600V/650V GaN HEMTs’ commercial availability was still questionable, despite some announcements from different players. Fast-forward to 2016 end users can now buy not only low-voltage GaN (<200V) devices from Efficient Power Conversion (EPC), but also high-voltage (600V/650V) components from several players, including Transphorm, GaN Systems, and Panasonic. Also, a new start-up, Navitas Semiconductor, announced their GaN power IC in March 2016, followed by Dialog Semiconductors revealing their GaN power IC in August 2016. The idea of bringing GaN from the power semiconductor market to the much bigger analog IC market is of interest to several other players too. For example, EPC and GaN Systems are both working on a more integrated solution, and Texas Instruments, a well-established analog IC player, has also been engaged in GaN activities, releasing an 80V power stage and 600V power stage in 2015 and 2016, respectively. Despite these exciting developments, the GaN power market remains small compared to the gigantic $335B silicon semiconductor market. In fact, according to Yole Développement (Yole) investigation the GaN power business was less than $10M in 2015. But before you think twice about GaN, remember that a small market size is not unusual for products just appearing on the market. The first GaN devices were not commercially available until 2010, so we are talking about an industry that is only six years old. What is most important is the GaN market’s future potential – and Yole expects the GaN power business to grow, reaching a market size of around $300M in 2021 at a 2016 – 2021 CAGR of 86%. This report provides a structured vision of the GaN power device market in terms of uses, applications, and potential trends.

1. Sep @2016
From Technologies to Market
Power GaN 2016:
Epitaxy and
Devices,
Applications, and
TechnologyTrends
Report Sample
From Technologies to Market

2. 2
Biographies & contacts
Hong LIN
Dr. Hong Lin has worked atYole Développement as a technology and market analyst since 2013. She specializes in compound
semiconductors and provides technical and economic analysis. Before joiningYole Développement,she worked as an R&D
engineer at Newstep Technologies. She was in charge of the development of cold cathodes made by PECVD for visible and UV
lamp applications based on nanotechnology. She holds a Ph.D in physics and chemistry of materials
lin@yole.fr
Zhen Zong
Zhen Zong works atYole Développement as an Analyst for Power Electronics and Compound Semiconductors. He graduated
from INSA Lyon with an Engineering degree in Material Sciences, specializing in semiconductor devices and micro/nano
technologies.
zong@yole.fr
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample

3. 3
COMPANIES CITED IN THE REPORT
AT&S, Dialog Smeiconductors, Efficient Power Conversion, Episil, Exagan, Fairchild, Ford, Fraunhofer IISB, Fuji Electric, GaN
Systems, Infineon, Micro GaN, Navitas Semiconductors, NXP, On Semiconductors, Panasonic, Philips, Powerex, Power Integration,
STMicroelectronics, Sumitomo SEI,Toshiba,Toyota,Texas Instruments,TSMC,Transphorm, VisIC Technologies, Xfab,Yaskawa
and more
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample

4. 4
POWER DENSITY ENHANCEMENT
Added value enabled by GaN
GaN
transistors
was used by
the final user
of the little
box challenge
organized by
Google.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
Now
Which can be realized
by 2016 :143W/in3
In July 2014, Google and the IEEE launched the $1 Million Little
Box Challenge, an open competition to design and build a small
kW-scale inverter with a power density greater than 50 Watts
per cubic inch while meeting a number of other specifications
related to efficiency, electrical noise and thermal performance.
GaN

5. 5
EXISITING GAN POWER DEVICES
While most
players are
working on
600V, 650V
range, EPC is
highly focus
on low
voltage GaN
devices.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
Base on product datasheet
Under development/
demonstrated/
sampling
Commercially available
As of August 2016 @YOLE

6. 6
BUSINESS MODELS IN GAN POWER
So far, epi
process are
mainly
integrated.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
Si Substrate Device Design GaN Epi Device processing
And more…
Power GaN
model 1
Power GaN
model 2
Power GaN
model 3
And more…
And more…
Power GaN
model 4
And more…
+

7. 7
POWER SUPPLY:TREND IN THE INDUSTRY
The need are
increased
efficiency,
higher power
density and
cost
reduction.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
PowerDensity
W/in3
20
10
30
40
2000 2005 2010 2015
Desktop PS
(multiple output)
Notebook adapters
Server
Power density evolution in the power supply

8. 8
WIRELESS POWER IN MOBILE PHONES
More and
more
cellphone
OEMs are
integrating a
wireless
charging unit
in the design.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
?
LG Electronics

9. 9
LIDAR MARKET SIZE EVOLUTION FORECAST
The lidar
market is
expect to
grow.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
Yole Développement © March 2016, Report
Sensors for drones and robots: market
opportunities and technology revolution
*This figure does not content tradition automotive

10. 10
GAN DISCRETE PACKAGING
Device parasitics
The higher
the device
frequency,
the more
important
the
consequence
of device
parasitics.
SiC MOSFETs
GaN HEMTs
Power
Electronics
RF
RF GaN
Frequency
Voltage
Low
High
LGA
Embedded die
TO
PQFN
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample
Packaging is becoming a particular
bottleneck for GaN. Different packages
have been used for GaN HEMT: traditional
TO packages, embedded die, LGA
package…

11. 11
PROJECTION OF GAN POWER DEVICE MARKET
Split by application
The total
GaN-based
power device
market is
expected to
grow to
$280M in
2021.
©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample

12. 12
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©2016 | www.yole.fr | Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends | Sample

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FromTechnologies to Market

15. 14
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22. 21
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23. 22
OUR 2016 REPORTS PLANNING (1/2)
MARKET ANDTECHNOLOGY REPORTS
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o MEMS SENSORS
− Gas Sensor Technology and Market 2016
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24. 23
OUR 2016 REPORTS PLANNING (2/2)
o COMPOUND SEMICONDUCTORS
− GaN RF Devices Market: Applications, Players, Technology, and Substrates 2016 – 2022
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o LED
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o POWER ELECTRONICS
− Power Electronics for EV/HEV 2016: Market, Innovations and Trends
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25. 24
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− Sensors and Data Management for Autonomous Vehicles
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− Power Packaging Technology Trends and Market Expectations
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Electricity Storage Solutions
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