SPICE MODEL of XBS304S17R (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: XBS304S17R
MANUFACTURER: TOREX SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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3. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
0V 200mV 400mV 600mV
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc XBS304S17R_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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4. Comparison Graph
Circuit Simulation Result
Simulation Result
VF (V)
IF (A) %Error
Measurement Simulation
0.01 0.236 0.236 0.21
0.02 0.256 0.255 -0.53
0.05 0.280 0.280 -0.15
0.1 0.300 0.299 -0.39
0.2 0.320 0.320 -0.09
0.5 0.350 0.352 0.51
1 0.385 0.384 -0.30
2 0.428 0.430 0.48
3 0.470 0.469 -0.26
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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5. Capacitance Characteristic
Circuit Simulation Result
500p
400p
300p
200p
100p
0
0V 10V 20V 30V 40V
I(V2)/(45V/10n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 45 V1 U1
V1 = 0 XBS304S17R_P
TD = 0
TR = 10ns
TF = 10ns
PW = 10us
PER = 50us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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6. Comparison Graph
Circuit Simulation Result
500
Measurement
Simulation
Inter-Terminal Capacity:Ct (pF)
400
300
200
100
0
0 10 20 30 40
Reverse Voltage:VR(V)
Simulation Result
Ct (pF)
VR (V) %Error
Measurement Simulation
0 308.000 296.176 -3.84
1 180.000 182.888 1.60
2 140.000 140.244 0.17
5 94.000 95.159 1.23
10 69.000 69.769 1.11
20 50.000 50.827 1.65
30 42.750 42.122 -1.47
40 37.500 36.818 -1.82
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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7. Reverse Recovery Characteristic
Circuit Simulation Result
20mA
10mA
0A
-10mA
-20mA
1.6us 1.8us 2.0us 2.2us 2.4us 2.5us
I(R1)
Time
Evaluation Circuit
R1
100
V2 = 1.24V
V1 = -0.76V
TD = 3.0ns V1 U1
TR = 1.5ns XBS304S17R_P
PW = 2us
TF = 1.0ns
PER = 50us
0
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trr ns 82.000 82.211 0.26
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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8. Reverse Characteristic
Circuit Simulation Result
100uA
0
10uA
1.0uA
100nA
0V 10V 20V 30V 40V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc XBS304S17R_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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9. Comparison Graph
Circuit Simulation Result
100.00
Measurement
Simulation
Reverse Current:IR (uA)
10.00
1.00
0.10
0 10 20 30 40
Reverse Voltage:VR (V)
Simulation Result
IR (uA)
VR (V) %Error
Measurement Simulation
1.00 1.600 1.618 1.14
2.00 1.828 1.813 -0.78
5.00 2.370 2.350 -0.84
10.00 3.120 3.134 0.45
20.00 4.700 4.678 -0.46
30.00 6.900 6.911 0.16
40.00 10.700 10.698 -0.02
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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