SPICE MODEL of XBS104V14R (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / STANDARD
PART NUMBER: XBS104V14R
MANUFACTURER: TOREX SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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3. Forward Current Characteristic
Circuit Simulation Result
1.0A
100mA
10mA
1.0mA
0V 200mV 400mV 600mV 800mV
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 D1
0Vdc DXBS104V14R
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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4. Comparison Graph
Circuit Simulation Result
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Measurement
Simulation
Forward Current:IF (A)
0.1
0.01
0.001
0 0.2 0.4 0.6 0.8
Forward Voltage:VF (V)
Simulation Result
VF (V)
IF (A) %Error
Measurement Simulation
0.001 0.110 0.107 -2.830
0.002 0.125 0.125 -0.329
0.005 0.145 0.149 2.507
0.01 0.165 0.167 0.970
0.02 0.185 0.185 0.098
0.05 0.210 0.211 0.529
0.1 0.235 0.232 -1.168
0.2 0.260 0.257 -1.240
0.5 0.301 0.300 -0.221
1 0.350 0.351 0.306
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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5. Capacitance Characteristic
Circuit Simulation Result
500p
400p
300p
200p
100p
0
5V 10V 20V 30V 40V
I(V2)/(40V/10n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 40 V1 D1
V1 = 0 DXBS104V14R
TD = 0
TR = 10ns
TF = 10ns
PW = 10us
PER = 50us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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6. Comparison Graph
Circuit Simulation Result
500
Measurement
Simulation
Inter-Terminal Capacity:Ct (pF)
400
300
200
100
0
5 15 25 35
Reverse Voltage:VR(V)
Simulation Result
Ct (pF)
VR (V) %Error
Measurement Simulation
5 73.000 73.248 0.34
10 52.000 51.961 -0.08
15 42.000 42.084 0.20
20 36.000 36.150 0.42
25 32.000 32.114 0.36
30 29.000 29.107 0.37
35 27.000 26.829 -0.63
40 25.000 24.953 -0.19
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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7. Reverse Recovery Characteristic
Circuit Simulation Result
20mA
15mA
10mA
5mA
0mA
-5mA
-10mA
-15mA
-20mA
1.80us 1.88us 1.96us 2.04us 2.12us 2.20us
I(R1)
Time
Evaluation Circuit
R1
100
V2 = 1.17V
V1 = -0.86V
TD = 0ns V1 D1
TR = 1ns DXBS104V14R
PW = 2us
TF = 1ns
PER = 50us
0
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trr ns 41.000 41.004 0.01
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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