SPICE MODEL of XBS104S13R-G (Standard Model) in SPICE PARK
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SPICE MODEL of XBS104S13R-G (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of XBS104S13R-G (Standard Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: DIODE/ SCHOTTKY RECTIFIER / STANDARD PART NUMBER: XBS104S13R-G MANUFACTURER: TOREX SEMICONDUCTOR Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 1
- 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 2
- 3. Forward Current Characteristic Circuit Simulation Result 1.0A 100mA 10mA 1.0mA 0V 200mV 400mV 600mV 800mV I(R1) V_V1 Evaluation Circuit R1 0.01m V1 D1 0Vdc DXBS104S13R-G 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 3
- 4. Comparison Graph Circuit Simulation Result 1 Measurement Simulation Forward Current:IF (A) 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 Forward Voltage:VF (V) Simulation Result VF (V) IF (A) %Error Measurement Simulation 0.001 0.210 0.210 0.166 0.002 0.230 0.228 -0.786 0.005 0.253 0.252 -0.342 0.01 0.270 0.271 0.291 0.02 0.290 0.290 -0.033 0.05 0.315 0.317 0.478 0.1 0.340 0.340 0.004 0.2 0.370 0.368 -0.476 0.5 0.420 0.421 0.198 1 0.480 0.480 -0.037 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 4
- 5. Capacitance Characteristic Circuit Simulation Result 200p 150p 100p 50p 0 0V 10V 20V 30V 40V I(V2)/(40V/10n) V(N16610) Evaluation Circuit V2 0Vdc V2 = 40 V1 D1 V1 = 0 DXBS104S13R-G TD = 0 TR = 10ns TF = 10ns PW = 10us PER = 50us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 5
- 6. Comparison Graph Circuit Simulation Result 200 Measurement Inter-Terminal Capacity:Ct (pF) Simulation 150 100 50 0 0 10 20 30 40 Reverse Voltage:VR(V) Simulation Result Ct (pF) VR (V) %Error Measurement Simulation 0 130.500 124.446 -4.64 1 80.000 80.838 1.05 5 44.000 44.561 1.28 10 34.000 33.284 -2.11 15 28.000 27.925 -0.27 20 25.000 24.614 -1.54 25 22.000 22.335 1.52 30 21.000 20.588 -1.96 35 19.000 19.232 1.22 40 18.000 18.168 0.93 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 6
- 7. Reverse Recovery Characteristic Circuit Simulation Result 20mA 15mA 10mA 5mA 0mA -5mA -10mA -15mA -20mA 1.84us 1.92us 2.00us 2.08us 2.16us 2.24us I(R1) Time Evaluation Circuit R1 100 V2 = 1.27V V1 = -0.78V TD = 0ns V1 D1 TR = 1ns DXBS104S13R-G PW = 2us TF = 1ns PER = 50us 0 Compare Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trr ns 25.000 25.029 0.12 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 7