SPICE MODEL of TRS6E65C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: TRS6E65C
MANUFACTURER: TOSHIBA
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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2. Circuit Configuration
TRS6E65C
DIODE MODEL PARAMETERS
PSpice
model
parameter
IS
N
RS
IKF
CJO
M
VJ
ISR
BV
IBV
TT
EG
Model description
Saturation Current
Emission Coefficient
Series Resistance
High-injection Knee Current
Zero-bias Junction Capacitance
Junction Grading Coefficient
Junction Potential
Recombination Current Saturation Value
Reverse Breakdown Voltage(a positive value)
Reverse Breakdown Current(a positive value)
Transit Time
Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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3. Forward Current Characteristics
Circuit Simulation result
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V
0.5V
1.0V
1.5V
2.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1
U1
TRS6E65C
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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4. Comparison Graph
Circuit Simulation result
Comparison table
VF (V)
IF (A)
Measurement
Simulation
%Error
0.1
0.912
0.906
-0.66
1
1.035
1.040
0.48
2
1.140
1.140
0.00
4
1.320
1.322
0.15
6
1.500
1.497
-0.20
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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5. Junction Capacitance Characteristic
Circuit Simulation result
1.0n
100p
10p
100mV
I(V2)/(650V/1u)
1.0V
10V
100V
V(N16610)
Evaluation circuit
V2
0Vdc
V2 = 650
V1 = 0
TD = 0
TR = 1us
TF = 500ns
PW = 100us
PER = 500us
U1
TRS6E65C
V1
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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6. Comparison Graph
Circuit Simulation result
Comparison table
CT (pF)
VR(V)
Measurement
Simulation
%Error
0.1
390.200
403.037
3.29
0.2
385.200
396.300
2.88
0.5
367.100
374.600
2.04
1
337.300
345.500
2.43
2
295.400
303.500
2.74
5
229.200
235.600
2.79
10
180.300
183.753
1.92
20
136.700
139.000
1.68
50
91.500
94.100
2.84
100
67.500
70.000
3.70
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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7. Reverse Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100V
I(R1)
200V
300V
400V
500V
600V
V_V1
Evaluation circuit
R1
100m
V1
U1
TRS6E65C
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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8. Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V)
Measurement
Simulation
%Error
2.00E-09
430.00
415.35
-3.41
1.00E-08
501.00
501.17
0.03
1.00E-07
600.00
601.59
0.27
3.00E-07
650.00
648.00
-0.31
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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