This document provides a summary report of the simulation and characterization of a Toshiba MOSFET transistor (TK80K04K3Z) and its internal body diode. It includes the MOSFET model parameters, as well as simulation results and comparisons to measurements for key electrical characteristics such as transconductance, drain current, gate charge, switching times, and reverse recovery behavior. Simulation results show good agreement with measurements across various operating conditions and parameters.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TK80K04K3Z
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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10
100
1000
0 50 100 150 200
gfs(S)
Drain current ID (A)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A)
gfs (S)
%Error
Measurement Simulation
10 83.000 86.465 4.17
20 118.000 122.169 3.53
50 191.000 192.904 1.00
100 273.000 272.460 -0.20
200 384.000 384.485 0.13
VDS=10V

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V_VGS
0V 2.0V 4.0V 6.0V 8.0V
-I(VDS)
0A
50A
100A
150A
200A
VGS
0
VDS
10V
U1
TK80K04K3Z
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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5
0
40
80
120
160
200
0.0 2.0 4.0 6.0 8.0
DraincurrentID(A)
Gate-source voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation result
Comparison table
ID (A)
VGS (V)
%Error
Measurement Simulation
5 4.520 4.623 2.28
10 4.620 4.691 1.54
20 4.730 4.786 1.18
50 4.900 4.977 1.57
100 5.080 5.192 2.20
200 5.390 5.496 1.97
VDS=10V

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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VGS
10V
0
VDS
U1
TK80K04K3Z
V_VDS
0V 20mV 40mV 60mV
-I(VDS)
0A
10A
20A
30A
40A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=10(V), ID=40(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 1.400 1.400 0.00

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V_VDS
0V 1.0V 2.0V 3.0V 4.0V 5.0V
-I(VDS)
0A
40A
80A
120A
160A
200A
VGS
0
VDS
U1
TK80K04K3Z
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=5V
5.2V
5.5V
5.6V5.8V
10V
5.3V
5.4V
5.7V
6V
8V
6.5V

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Capacitance Characteristics
Simulation result
Comparison table
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 3570 3588 0.50
0.2 3350 3360 0.30
0.5 2900 2901 0.03
1 2450 2450 0.00
2 1890 1903 0.69
5 1300 1308 0.62
10 980 976 -0.41
20 670 676 0.90
Simulation
Measurement

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Time*1m
0s 80ns 160ns 240ns 320ns
V(W1:3)
0V
2V
4V
6V
8V
10V
12V
14V
0
D1
DMod
U1
TK80K04K3Z
-
+
W1
ION = 0
IOFF = 1mA
W
IGTD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
ID
80A
VDD
32V
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=32(V), VGS=10(V), ID=80(A)
Parameter Unit Measurement Simulation %Error
Qgs nc 50.000 50.149 0.30
Qgd nc 95.000 94.925 -0.08
Qg nc 210.000 209.947 -0.03

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Time
1.68us 1.84us 2.00us 2.16us 2.32us 2.48us
V(G) V(D)/2
0V
5V
10V
15V
V1TD = 2u
TF = 1n
PW = 10u
PER = 1000u
V1 = 0
TR = 1n
V2 = 20V
VDD
20V
0
RL
0.5
D
L2
50nH
12
U1
TK80K04K3Z
L1
30nH
1 2
R2
4.7
G
R1
4.7
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=20(V), VGS=0/10(V), ID=40(A)
Parameter Unit Measurement Simulation %Error
ton ns 90.000 89.914 -0.10

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V_VDS
0V -0.4V -0.8V -1.2V
I(VDS)
1.0A
10A
100A
1.0KA
VDS
0
U1
TK80K04K3Z
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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1
10
100
1000
0.0 0.4 0.8 1.2
DrianreversecurrentIDR(A)
Drain - source voltage -VDS (V)
Measurement
Simulation
Comparison Graph
Simulation result
Comparison table
IDR (A)
-VDS (V)
%Error
Measurement Simulation
1 0.650 0.649 -0.15
2 0.671 0.670 -0.15
5 0.700 0.700 0.00
10 0.723 0.725 0.28
20 0.752 0.755 0.40
50 0.810 0.809 -0.12
100 0.880 0.875 -0.57
200 0.985 0.987 0.20

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Time
8.8us 9.6us 10.4us 11.2us 12.0us 12.8us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1TD = 390ns
TF = 5ns
PW = 10us
PER = 1ms
V1 = -9.4V
TR = 5ns
V2 = 10.6V
R1
50
U1
DTK80K04K3Z_P
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 24.000 23.862 -0.58
trb ns 366.000 365.848 -0.04
trr ns 390.000 389.710 -0.07

14. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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Reverse Recovery Characteristics Reference
Trj = 24(ns)
Trb = 366(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement

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V_VGS
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
-I(VGS)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
VGS
0
R1
1G
U1
TK80K04K3Z
ESD PROTECTION DIODE
Zener Voltage Characteristics
Circuit Simulation result
Evaluation circuit

16. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
16
Zener Voltage Characteristics Reference
IZ = 1(mA)
VZ = 24.85(V) at IZ=1mA
Measurement