This document provides a 14-page report on modeling and simulation parameters for a Toshiba MOSFET transistor (TK65E10N1). It includes:
- MOSFET model parameters for the PSpice simulation.
- Simulation results and comparisons to measurements for various transistor characteristics like transconductance, output characteristics, capacitance, gate charge, switching times and reverse recovery.
- Circuit schematics used to simulate and evaluate the transistor parameters.
- Tables and graphs comparing simulation results to manufacturer measurements with good agreement within a few percent error.