D25XB80 PSpice Model (Free SPICE Model)

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: DIODE/ GENERAL PURPOSE
RECTIFIER/ STANDARD MODEL
PART NUMBER: D25XB80
MANUFACTURER: SHINDENGEN

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
D1
D25XB80
SPICE MODEL
Circuit Configuration
*$
* PART NUMBER: D25XB80
* MANUFACTURER: SHINDENGEN
* VRRM=800V, IF=25A
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
.MODEL D25XB80 D
+ IS=7.7410E-12
+ N=1.1885
+ RS=19.037E-3
+ IKF=374.02
+ EG=3
+ CJO=281.01E-12
+ M=.31015
+ VJ=.44082
+ ISR=0
+ BV=840
+ IBV=10.000E-6
+ TT=25.314E-6
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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V_V1
0.6V 0.8V 1.0V 1.2V0.5V
I(D1)
100mA
1.0A
10A
R1
0.01m
V1
0
D1
D25XB80
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5
0.1
1
10
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
ForwordCurrent,IF(A)
Forward Voltage, VF (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.1 0.714 0.717 0.42
0.2 0.742 0.740 -0.27
0.5 0.778 0.774 -0.51
1 0.809 0.805 -0.49
2 0.844 0.845 0.12
5 0.926 0.931 0.54
10 1.050 1.048 -0.19

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0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 1us
V2 = 800
V2
0
D1
D25XB80
V(R)
100mV 1.0V 10V 100V
I(V2)/(600V/1u)
0
50p
100p
150p
200p
250p
300p
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

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0
50
100
150
200
250
300
0.1 1 10 100
Capacitance,C(pF)
Reverse Voltage, VR (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
C (pF)
%Error
Measurement Simulation
0.1 263.927 265.014 0.41
0.2 250.708 251.000 0.12
0.5 220.989 222.567 0.71
1 194.193 195.000 0.42
2 165.617 165.284 -0.20
5 129.540 128.900 -0.49
10 106.023 105.380 -0.61
20 85.895 85.600 -0.34
50 64.212 64.700 0.76
100 51.030 52.141 2.18

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Time
20us 24us 28us 32us 36us 40us 44us 48us 52us 56us17us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1TD = 0ns
TF = 10ns
PW = 20us
PER = 100us
V1 = -9.23V
TR = 10ns
V2 = 10.7V
R1
50
D1
D25XB80
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj us 10.80 10.75 -0.46

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Reverse Recovery Characteristics Reference
trj=10.80 (us)
trb=4.88(us)
Conditions:Ifwd=Irev=0.2(A),Rl=50
Relation between trj and trb
Example