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Device Modeling Report




COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: C4D40120D
MANUFACTURER: CREE
REMARK: Professional Model




                 Bee Technologies Inc.




   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                  1
DIODE MODEL PARAMETERS

 Spice model
                                      Model description
  parameter
     IS        Saturation Current
     N         Emission Coefficient
    RS         Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




           All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                          2
Forward Current Characteristics

Circuit Simulation result




Evaluation circuit




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                    3
Comparison Graph

Circuit Simulation result




Comparison table


                                             VF (V)
               IF (A)                                                       %Error
                                Measurement           Simulation
                        0.1              0.750                 0.768              2.40
                        0.2              0.820                 0.806              -1.71
                        0.5              0.860                 0.861              0.12
                            1            0.925                 0.910              -1.62
                            2            0.975                 0.974              -0.10
                            5            1.100                 1.106              0.55
                        10               1.285                 1.283              -0.16
                        20               1.589                 1.603              0.88
                        40               2.215                 2.208              -0.32




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          4
Reverse Current Characteristic

Circuit Simulation result




Evaluation circuit




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                    5
Comparison Graph

Circuit Simulation result




Comparison table


                                            IR (mA)
              VR (V)                                                        %Error
                             Measurement             Simulation
                    1250             4.00E-03            3.900E-03                -2.50
                    1350             1.47E-02            1.400E-02                -4.76
                    1450             5.24E-02            5.000E-02                -4.58
                    1550             1.71E-01            1.790E-01                4.86
                    1555            1.00E+00              1.00E+00                0.00




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          6
Total Capacitance Characteristics

Circuit Simulation result




Evaluation circuit




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                    7
Comparison Graph

Circuit Simulation result




Comparison table


                                            CT (pF)
              VR (V)                                                        %Error
                                Measurement          Simulation
                       0.2          1445.000              1448.000                0.21
                       0.5          1310.000              1313.000                0.23
                            1        1150.000              1154.100               0.36
                            2         950.000               959.127               0.96
                            5         700.000               694.823               -0.74
                        10            530.000               522.351               -1.44
                        20            385.000               384.447               -0.14
                        50            255.000               251.905               -1.21
                       100            180.000               181.873               1.04
                       200            125.000               131.017               4.81
                       500             82.000                84.780               3.39
                    1000               59.000                61.201               3.73

                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          8

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SPICE MODEL of C4D40120D LTspice Model (Professional Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: C4D40120D MANUFACTURER: CREE REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  • 2. DIODE MODEL PARAMETERS Spice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  • 3. Forward Current Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  • 4. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.1 0.750 0.768 2.40 0.2 0.820 0.806 -1.71 0.5 0.860 0.861 0.12 1 0.925 0.910 -1.62 2 0.975 0.974 -0.10 5 1.100 1.106 0.55 10 1.285 1.283 -0.16 20 1.589 1.603 0.88 40 2.215 2.208 -0.32 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  • 5. Reverse Current Characteristic Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  • 6. Comparison Graph Circuit Simulation result Comparison table IR (mA) VR (V) %Error Measurement Simulation 1250 4.00E-03 3.900E-03 -2.50 1350 1.47E-02 1.400E-02 -4.76 1450 5.24E-02 5.000E-02 -4.58 1550 1.71E-01 1.790E-01 4.86 1555 1.00E+00 1.00E+00 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  • 7. Total Capacitance Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  • 8. Comparison Graph Circuit Simulation result Comparison table CT (pF) VR (V) %Error Measurement Simulation 0.2 1445.000 1448.000 0.21 0.5 1310.000 1313.000 0.23 1 1150.000 1154.100 0.36 2 950.000 959.127 0.96 5 700.000 694.823 -0.74 10 530.000 522.351 -1.44 20 385.000 384.447 -0.14 50 255.000 251.905 -1.21 100 180.000 181.873 1.04 200 125.000 131.017 4.81 500 82.000 84.780 3.39 1000 59.000 61.201 3.73 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8