SPICE MODEL of 2SK3110 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: 2SK3110
MANUFACTURER: NEC
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic
Circuit Simulation Result
10
9
8
7
6
gfs
5
4
3
2
Measurement
1 Simulation
0
0 1 2 3 4 5 6 7 8 9 10
ID - Drain Current - A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.1 0.830 0.833 0.361
0.2 1.175 1.176 0.085
0.5 1.850 1.852 0.108
1 2.550 2.564 0.549
2 3.600 3.621 0.583
5 5.600 5.618 0.321
10 7.500 7.634 1.787
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristic
Circuit Simulation result
100A
10A
1.0A
100mA
10mA
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V 11V 12V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U29
Vv ariable
2SK3110
10Vdc
10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
10.00
Measurement
9.00 Simulation
8.00
7.00
ID - Drain Current - A
6.00
5.00
4.00
3.00
2.00
1.00
0.00
0 1 2 3 4 5 6 7 8 9 10 11 12
VGS - Gate to Source Voltage - V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.01 4.150 4.330 4.337
0.02 4.200 4.364 3.905
0.05 4.400 4.428 0.636
0.1 4.550 4.501 -1.077
0.2 4.610 4.604 -0.130
0.5 4.900 4.809 -1.857
1 5.200 5.042 -3.038
2 5.400 5.374 -0.481
5 5.850 6.044 3.316
10 6.700 6.815 1.716
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Rds(on) Characteristic
Circuit Simulation result
10A
9A
8A
7A
6A
5A
4A
3A
2A
1A
0A
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U29 VDS
10Vdc 2SK3110
0Vdc
VGS
0
Simulation Result
ID=7A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.120 0.120 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
0 10n 20n 30n 40n 50n 60n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U29 Dbreak
PER = 1000u
PW = 600u W1 2SK3110
TF = 10n + D1
TR = 10n I2
-
TD = 0 14Adc
I2 = 1m W
I1 IOFF = 1mA
I1 = 0 ION = 0uA
V1
160Vdc
0
Simulation Result
VDD=160V,ID=14A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 7.000 7.051 0.729
Qgd(nC) 25.000 25.000 0.000
Qg 42.000 41.923 -0.183
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
0.90us 0.95us 1.00us 1.05us 1.10us 1.15us 1.20us 1.25us
V(L2:1)/10 V(L1:2)
Time
Evaluation circuit
L2 R2
50nH
14
R1 L1 U32
2SK3110
30nH
V1 = 0 10 V1
V2 = 20 V2 100Vdc
TD = 1u R3
TR = 1n
TF = 1n 10
PW = 10u
PER = 200u
0
Simulation Result
ID=40 A, VDD=30V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 25.000 25.005 0.020
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Output Characteristic
Circuit Simulation result
20A
10V 9V
18A
8V
16A
14A
7V
12A
10A
8A
6A
6V
4A
2A VGS=5V
0A
0V 2V 4V 6V 8V 10V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U31
2SK3110 Vv ariable
10Vdc
10Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 2SK3110
0Vdc
U28
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Drain reverse current IDR(A)
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
IDR(A) Measuremen Simulation %Error
0.1 0.662 0.660 -0.302
0.2 0.687 0.690 0.437
0.5 0.721 0.720 -0.139
1 0.752 0.755 0.399
2 0.787 0.790 0.381
5 0.855 0.850 -0.585
10 0.938 0.940 0.213
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
4.0us 4.4us 4.8us 5.2us 5.6us 6.0us 6.4us 6.8us 7.2us 7.6us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.7v D3110
TD = 265n
TR = 10ns
TF = 19ns U28
PW = 5us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(ns) 480 479.234 -0.160
Trb(ns) 220 219.906 -0.043
Trr(ns) 700 699.140 -0.123
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic Reference
Trj=480.00(ns)
Trb=220.000(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc
R2
2SK3110
100MEG
U30
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007