This document summarizes SPICE models for the components in a power MOSFET and ESD protection diode device. It includes: 1) SPICE models and parameters for the power MOSFET, including its transconductance, capacitances, switching times, and body diode characteristics. 2) Simulation results comparing measurements to simulations for various characteristics. 3) SPICE models and parameters for the body diode and ESD protection diode. 4) Simulation results for the diodes' forward and reverse recovery characteristics and zener voltage.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: 2SJ657
MANUFACTURER: SANYO
Body Diode (Professional Model) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs(S)
-Id(A) Error (%)
Measurement Simulation
1 10.850 11.282 3.98
2 14.800 15.243 2.99
5 21.700 22.139 2.02
10 28.250 28.683 1.53
20 35.800 36.253 1.27
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4. Vgs-Id Characteristic
Circuit Simulation result
-50A
-40A
-30A
-20A
-10A
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
V2
U1 -10
V1 2SJ657
0Vdc
0
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
-VGS(V)
-ID(A) Error (%)
Measurement Simulation
1 2.600 2.616 0.62
2 2.700 2.691 -0.33
5 2.850 2.851 0.04
10 3.050 3.046 -0.13
20 3.350 3.352 0.06
50 4.100 4.062 -0.93
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6. Rds(on) Characteristic
Circuit Simulation result
-16A
-14A
-12A
-10A
-8A
-6A
-4A
-2A
0A
0V -100mV -200mV -300mV -400mV -500mV -600mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
2SJ657 0Vdc
V1
-10
0
Simulation Result
ID= -13A, VGS= -10V Measurement Simulation Error (%)
R DS (on) mΩ 39.000 39.000 0.00
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7. Gate Charge Characteristic
Circuit Simulation result
-10V
-9V
-8V
-7V
-6V
-5V
-4V
-3V
-2V
-1V
0V
0 10n 20n 30n 40n 50n 60n 70n 80n 90n 100n
V(W1:4)
Time*1mA
Evaluation circuit
U1 I2
2SJ657 D2 25
I1 = 0 ION = 0uA Dbreak
I2 = 1m IOFF = 1mA
TD = 0 I1 W
TR = 5n - VDD
TF = 5n +
PW = 600u
PER = 1000u W1 -50
0
Simulation Result
VDD= -50V,ID= -25A
Measurement Simulation Error (%)
,VGS= -10V
Qgs nC 20.000 20.063 0.31
Qgd nC 20.000 20.129 0.65
Qg nC 110.000 110.196 0.18
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8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VSD(V) Error(%)
Measurement Simulation
0.0 1030.000 1035.000 0.49
1.0 780.000 770.000 -1.28
2.0 615.000 620.000 0.81
5.0 412.000 416.000 0.97
10.0 285.000 287.000 0.70
15.0 220.000 223.000 1.36
20.0 190.000 188.000 -1.05
25.0 165.000 163.000 -1.21
30.0 155.000 152.000 -1.94
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9. Switching Time Characteristic
Circuit Simulation result
-14V
-12V
-10V
-8V
-6V
-4V
-2V
0V
0.8us 1.0us 1.2us 1.4us 1.6us
V(U1:G) V(U1:D)/5
Time
Evaluation circuit
L2 RL
50nH 3.85
R1 L1
U1
PER = 20u 2SJ657
PW = 10u 30nH VDD
TF = 5n 50 R2 -50Vdc
TR = 5n 50
TD = 1u
V2 = 20 V2
V1 = 0
0
Simulation Result
ID= -13A, VDD= -50V
Measurement Simulation Error(%)
VGS=0/-10V
td(on) ns 47.000 47.047 0.10
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10. Output Characteristic
Circuit Simulation result
-50A
-10
-6
-4
-40A
-30A
-20A
-10A
VGS=-3V
0A
0V -0.5V -1.5V -2.5V -3.5V -4.5V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1 V2
2SJ657
V1 -5
0
0
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11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
1.0mA
0.3V 0.6V 0.9V 1.2V
I(Vsense)
V_VSD
Evaluation Circuit
Vsense
0Vdc
U1
VSD 2SJ657
0
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12. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD (-V)
IDR(-A) %Error
Measurement Simulation
0.001 0.492 0.489 -0.61
0.01 0.553 0.554 0.18
0.100 0.617 0.619 0.32
1.000 0.697 0.693 -0.57
2.000 0.723 0.721 -0.28
5.000 0.770 0.772 0.26
10.000 0.825 0.825 0.00
20.000 0.900 0.899 -0.11
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13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
10.2us 10.6us 11.0us 11.4us 11.8us 12.2us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v
V2 = 10.6v V1
TD = 1.05us U1
TR = 10ns D2SJ657_P
TF = 10ns
PW = 10us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 53.000 52.868 -0.25
trb ns 84.000 83.916 -0.10
trr ns 137.000 136.784 -0.16
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14. Reverse Recovery Characteristic Reference
Measurement
Trj= 53.00 (ns)
Trb= 84.00 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
-10mA
-8mA
-6mA
-4mA
-2mA
0A
0V -10V -20V -30V -40V -50V
I(R1)
V_V1
Evaluation Circuit
R1
0.001m
V1
0Vdc
R2
U1
2SJ657 100MEG
0
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16. Zener Voltage Characteristic Reference
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