2SC2715Y using multisim

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
1
Bee Technologies Inc.
COMPONENTS:BIPOLARJUNCTIONTRANSISTOR
PART NUMBER: 2SC2715Y
MANUFACTURER: TOSHIBA
Device Modeling Report

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
2
Q1
Q2SC2715Y
SPICE MODEL
*$
*PART NUMBER: 2SC2715Y
*VCEO=30V, IC[MAX]=50mA
*MANUFACTURER: TOSHIBA
*All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
.MODEL Q2SC2715Y NPN
+ IS=4.8313E-15
+ BF=226.62
+ VAF=201.35
+ IKF=16.022E-3
+ ISE=45.881E-15
+ NE=1.5393
+ BR=21.4134
+ VAR=114
+ IKR=18.340E-3
+ ISC=96.020E-12
+ NC=2.1801
+ NK=.12171
+ RB=2.0041
+ RC=1.7377
+ CJE=9.3626E-12
+ VJE=.63716
+ MJE=.30393
+ CJC=3.3843E-12
+ VJC=.35
+ MJC=.23327
+ TF=16n
+ XTF=10
+ VTF=10
+ ITF=1
+ TR=20n
*$

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012
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BJT SPICE ModelParameters
PSpice model
parameter
Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC
Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS

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Ic
Vce
VAR
(X1,Y1)
(X2,Y2)
Y=aX+b
Reverse
Reverse Early VoltageCharacteristic

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Reverse DC Beta Characteristic (IE vs. hFE)
Emitter Current (A)
Measuremen
t
Simulation

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Ic
Vce
VAF
(X1,Y1)
(X2,Y2)
Y=aX+b
Forward
Forward Early VoltageCharacteristic

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C-B Capacitance Characteristics
REVERSE VOLTAGE VR (V)
E-B Capacitance Characteristics
REVERSE VOLTAGE VR (V)
Measurement
Simulation
Measurement
Simulation

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Transistor hFE-IC Characteristics
Simulation result
Evaluation circuit

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ComparisonGraph
Simulation result
Comparison table
IC (mA)
hFE
%Error
Measurement Simulation
0.2 163.000 162.698 -0.19
0.5 177.000 176.532 -0.26
1.0 185.000 184.829 -0.09
2.0 191.000 190.627 -0.20
5.0 193.000 194.007 0.52
10.0 193.000 193.172 0.09
20.0 191.000 189.761 -0.65
50.0 182.000 182.318 0.17
VCE=6V

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I1
2.5mA
I2
50mA
Q1
Q2SC2715Y
VCE(Sat)-IC Characteristics
Simulation result
Evaluation circuit
Test condition: IC/IB=20, IC=50mA
Parameter Measurement Simulation %Error
VCE(Sat) (V) 0.112 0.111 -0.89

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I1
2.5mA
I2
50mA
Q1
Q2SC2715Y
VBE(Sat)-IC Characteristics
Simulation result
Evaluation circuit
Test condition: IC/IB=20, IC=50mA
Parameter Measurement Simulation %Error
VBE(Sat) (V) 0.822 0.800 -2.68

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Switching Characteristics
Test condition: VCC=12V, IC=16.67mA
Parameter Measurement Simulation %Error
tf (ns) 175.000 174.717 -0.16
Circuit Simulation Result
Evaluation Circuit
Comparison table

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Switching Characteristics Reference

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OutputCharacteristics
Simulation result
Evaluation circuit
IB=50uA
100uA
150uA
200uA
250uA
350uA
300uA
400uA
450uA
500uA