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PN junction diode
Prepared by
Mrs.V.SrirengaNachiyar, AP(SG)/ECE
Ramco Institute of Technology
Rajapalayam
Introduction
• The term diode refers to a two- electrode or
two terminal device
• A semiconductor diode is simply a pn-junction
with a connecting lead on each side.
• A diode is a one-way device, offering a low
resistance when forward biased and behaving
almost as an open switch when reverse biased
• A pn-junction permits substantial current flow
when forward biased, and blocks current when
reverse-biased
• Thus, it can be used as a switch: on when
forward-biased and off when biased in reverse.
• A pn-junction provided with copper wire
connecting leads becomes an electronic device
known as a diode
• The circuit symbol (or graphic symbol) for
diode is an arrowhead and bar
Current flows in the arrowhead
direction when the diode is
forward biased: “+” on the
anode & “-”on the cathode
• A semiconductor
diode is a pn
junction with
conductors on each
side of the junction
for connecting the
device to a circuit
• The arrowhead indicates the conventional
direction of current flow when the diode is
forward-biased (from the positive terminal
through the device to the negative terminal).
• The p-side of the diode is always the positive
terminal for forward bias and is termed the
anode.
• The n-side, called the cathode, is the negative
terminal when the device is forward biased.
• A pn-junction diode can be destroyed if a high
level of forward current overheats the device.
• It can also be destroyed if a large reverse
voltage causes the junction to break down.
• In general, physically large diodes pass the
largest currents and survive the largest reverse
voltages.
• Small diodes are limited to low current levels
and low reverse voltages.
• Based on the appearance of the device
categorized into three types
1. Low current diode
2. Medium current diode
3. High current diode
The medium-current diode
shown can usually pass a
forward current of about
400 mA and survive over
200 V reverse bias.
The anode and cathode
terminals may be indicated
by a diode symbol on the
side of the device.
• Diode is usually capable of
passing a maximum forward
current of approximately 100
mA. It can also survive about 75
V reverse bias without breaking
down, and its reverse current is
usually less than 1 µA at 25°C.
• High-current diodes, or power diodes generate a lot of
heat. So air convection would be completely
inadequate.
• Such devices are designed to be connected
mechanically to a metal heat sink.
• Power diodes can pass forward currents of many
amperes and can survive several hundred volts of
reverse bias.
CHARACTERISTICS AND PARAMETERS
Forward and Reverse Characteristics:
• For the silicon diode the forward current (IF)
remains very low (less than 100 µA) until the
diode forward-bias voltage (VF) exceeds
approximately 0.7 V.
• At V₁ levels greater than 0.7 V, If increases almost
linearly.
• Because the diode reverse current (IR) is very
much smaller than its forward current, the reverse
characteristics are plotted with expanded current
scales.
• For a silicon diode, IR is normally less than 100
nA, and it is almost completely independent of
the reverse-bias voltage.
Forward and Reverse characteristics
for a silicon diode
• IR is largely a minority charge carrier reverse
saturation current.
• A small increase in IR can occur with
increasing reverse-bias voltage, as a result of
minority charge carriers leaking along the
junction surface.
Forward and Reverse characteristics
for a germanium diode
Diode parameters
• VF ---- forward voltage drop
• IR ---- Reverse Saturation current
• VBR --- Reverse breakdown voltage
• rd ----- dynamic resistance
• IF(max) ---- Maximum forward current
Determination of dynamic resistance
(rd) of the diode from the forward
characteristic
• The dynamic resistance (incremental resistance
or ac resistance) of the diode is the resistance
offered to changing levels of forward voltage.
• It is the reciprocal of the slope of the forward
characteristics beyond the knee.
• 𝑟𝑑 =
∆𝑉𝐹
∆𝐼𝐹
• The dynamic resistance can be calculated form
the rule of thumb equation:
• 𝑟′𝑑 =
26𝑚𝑉
𝐼𝐹
, where IF is the dc forward
current.
Diode approximations
• Diode is a one way device, offering a low
resistance when forward biased and a high
resistance when biased in reverse.
• An ideal diode would have zero forward
resistance and zero forward voltage drop
• Also have an infinitely high reverse resistance,
which would results in zero reverse current
DC Equivalent Circuits
• An equivalent circuit for a device is a circuit that
represents the device behavior.
• Usually, the equivalent circuit is made up of a
number of components, such as resistors and
voltage cells.
• A diode equivalent circuit may be substituted for
the device when investigating a circuit containing
the diode.
• Equivalent circuits may also be used as device
models for computer analysis.
• A more accurate equivalent circuit includes the diode
dynamic resistance (rd) in series with the voltage cell
• This takes account of the small variations in VF that
occur with change in forward current. An ideal diode
is also included to show that current flows only in one
direction.

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PN junction diodes.pptx

  • 1. PN junction diode Prepared by Mrs.V.SrirengaNachiyar, AP(SG)/ECE Ramco Institute of Technology Rajapalayam
  • 2. Introduction • The term diode refers to a two- electrode or two terminal device • A semiconductor diode is simply a pn-junction with a connecting lead on each side. • A diode is a one-way device, offering a low resistance when forward biased and behaving almost as an open switch when reverse biased
  • 3. • A pn-junction permits substantial current flow when forward biased, and blocks current when reverse-biased • Thus, it can be used as a switch: on when forward-biased and off when biased in reverse. • A pn-junction provided with copper wire connecting leads becomes an electronic device known as a diode • The circuit symbol (or graphic symbol) for diode is an arrowhead and bar
  • 4. Current flows in the arrowhead direction when the diode is forward biased: “+” on the anode & “-”on the cathode • A semiconductor diode is a pn junction with conductors on each side of the junction for connecting the device to a circuit
  • 5. • The arrowhead indicates the conventional direction of current flow when the diode is forward-biased (from the positive terminal through the device to the negative terminal). • The p-side of the diode is always the positive terminal for forward bias and is termed the anode. • The n-side, called the cathode, is the negative terminal when the device is forward biased. • A pn-junction diode can be destroyed if a high level of forward current overheats the device. • It can also be destroyed if a large reverse voltage causes the junction to break down.
  • 6. • In general, physically large diodes pass the largest currents and survive the largest reverse voltages. • Small diodes are limited to low current levels and low reverse voltages. • Based on the appearance of the device categorized into three types 1. Low current diode 2. Medium current diode 3. High current diode
  • 7. The medium-current diode shown can usually pass a forward current of about 400 mA and survive over 200 V reverse bias. The anode and cathode terminals may be indicated by a diode symbol on the side of the device. • Diode is usually capable of passing a maximum forward current of approximately 100 mA. It can also survive about 75 V reverse bias without breaking down, and its reverse current is usually less than 1 µA at 25°C.
  • 8. • High-current diodes, or power diodes generate a lot of heat. So air convection would be completely inadequate. • Such devices are designed to be connected mechanically to a metal heat sink. • Power diodes can pass forward currents of many amperes and can survive several hundred volts of reverse bias.
  • 9. CHARACTERISTICS AND PARAMETERS Forward and Reverse Characteristics: • For the silicon diode the forward current (IF) remains very low (less than 100 µA) until the diode forward-bias voltage (VF) exceeds approximately 0.7 V. • At V₁ levels greater than 0.7 V, If increases almost linearly. • Because the diode reverse current (IR) is very much smaller than its forward current, the reverse characteristics are plotted with expanded current scales. • For a silicon diode, IR is normally less than 100 nA, and it is almost completely independent of the reverse-bias voltage.
  • 10. Forward and Reverse characteristics for a silicon diode
  • 11. • IR is largely a minority charge carrier reverse saturation current. • A small increase in IR can occur with increasing reverse-bias voltage, as a result of minority charge carriers leaking along the junction surface.
  • 12. Forward and Reverse characteristics for a germanium diode
  • 13. Diode parameters • VF ---- forward voltage drop • IR ---- Reverse Saturation current • VBR --- Reverse breakdown voltage • rd ----- dynamic resistance • IF(max) ---- Maximum forward current
  • 14. Determination of dynamic resistance (rd) of the diode from the forward characteristic
  • 15. • The dynamic resistance (incremental resistance or ac resistance) of the diode is the resistance offered to changing levels of forward voltage. • It is the reciprocal of the slope of the forward characteristics beyond the knee. • 𝑟𝑑 = ∆𝑉𝐹 ∆𝐼𝐹 • The dynamic resistance can be calculated form the rule of thumb equation: • 𝑟′𝑑 = 26𝑚𝑉 𝐼𝐹 , where IF is the dc forward current.
  • 16. Diode approximations • Diode is a one way device, offering a low resistance when forward biased and a high resistance when biased in reverse. • An ideal diode would have zero forward resistance and zero forward voltage drop • Also have an infinitely high reverse resistance, which would results in zero reverse current
  • 17. DC Equivalent Circuits • An equivalent circuit for a device is a circuit that represents the device behavior. • Usually, the equivalent circuit is made up of a number of components, such as resistors and voltage cells. • A diode equivalent circuit may be substituted for the device when investigating a circuit containing the diode. • Equivalent circuits may also be used as device models for computer analysis.
  • 18. • A more accurate equivalent circuit includes the diode dynamic resistance (rd) in series with the voltage cell • This takes account of the small variations in VF that occur with change in forward current. An ideal diode is also included to show that current flows only in one direction.