Mais conteúdo relacionado Semelhante a 3D Integrated Circuits and their economic feasibility (20) Mais de Jeffrey Funk (20) 3D Integrated Circuits and their economic feasibility1. 1Broadcom Proprietary and Confidential. © 2012 Broadcom Corporation. All rights
reserved.
Liu Shaotao A0082081
Fan Yang A0098546
Emile Choo A0094185
Wang Qian Qian A0082192
Qu Xian A0104376
Lim Teck Yeow A0098556
MT5009
Opportunity for 3D IC
For information on other new technologies that are becoming economically feasible,
see http://www.slideshare.net/Funk98/presentations
2. 2Broadcom Proprietary and Confidential. © 2012 Broadcom Corporation. All rights
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1.Introduction to 3D IC
2.Advantages of 3D IC
3.Development and Challenges
4.Business opportunities for 3D IC
5.Q&A
AGENDA
3. 3Broadcom Proprietary and Confidential. © 2012 Broadcom Corporation. All rights
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PART1:
INTRODUCTION TO 3D IC
Liu Shaotao
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CHIP SIZE VS DEVICE SIZE
1953 1983 now
0
50
100
150
200
250
300
350
1971 1972 1974 1978 1982 1985 1992 1994 1995 1998 1999 2000
Chip size
year
sqmm
Device getting smaller
Chip size increases
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PART 2:
ADVANTAGES OF 3D IC
Liu Shaotao
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Timing delay
Length of metal wire connection
Data transfer rate
Chip area
Operating frequency
Power consumption
Development cost
Manufacturing cost
KEY PARAMETERS
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TIMING DELAY: 3D VS 2D
3D ICs Interconnect Performance Modeling and Analysis , Ph.D. Dissertation Draft
3D has 37% reduction
Timing delay:
- data transfer time from one transistor to another;
- smaller timing delay could help to achieve higher frequencies
10. 10Broadcom Proprietary and Confidential. © 2012 Broadcom Corporation. All rights
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TIMING DELAY: 3D VS 2D (CONTINUE)
3D ICs Interconnect Performance Modeling and Analysis , Ph.D. Dissertation Draft
2 layers: 37% reduction
3 layers: 57% reduction
4 or 5 layers: 65% reduction
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LENGTH OF METAL WIRE CONNECTION
3D ICs Interconnect Performance Modeling and Analysis , Ph.D. Dissertation Draft
28% and above reduction
Metal wire connection:
- Length of metal used to connect one transistor to another;
-shorter metal wire length help to reduce timing delay and power consumption
12. 12Broadcom Proprietary and Confidential. © 2012 Broadcom Corporation. All rights
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DATA TRANSFER RATE
3D TECHNOLOGIES: SOME PERSPECTIVES FOR MEMORY INTERCONNECT AND CONTROLLER,
Denis Dutoit, Fabien Clermidy, Pascal Vivet
3D IC
Cost per 100GB:
DDR@16W
3D IC@3.2 W, 80% reduction
2D IC
Date transfer rate:
- ability to transfer date per second
GB/s
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CHIP AREA
3D ICs Interconnect Performance Modeling and Analysis , Ph.D. Dissertation Draft
Chip area:
- size of silicon chip
3D IC has 50% reduction
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OPERATING FREQUENCY
3D ICs Interconnect Performance Modeling and Analysis , Ph.D. Dissertation Draft
Operating frequency:
- measures the speed of clock; the higher the better
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ENERGY CONSUMPTION
3D IC technology, Pouya Dormiani and Christopher Lucas
2 layers: 30% reduction
3 layers: 35% reduction
4 or 5 layers: 40% reduction
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DEVELOPMENT COST
http://www.monolithic3d.com/why-monolithic-3d.html
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MANUFACTURING COST REDUCTION
Market trends & Cost analysis for 3D ICs, JC Eloy
128Gb: 30% reduction
256Gb: 50% reduction
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From: http://www.monolithic3d.com/why-monolithic-3d.html
3D PROTOTYPE
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PART 3:
TECHNOLOGY DEVELOPMENT AND
CHALLENGES
Fan Yang
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Simple stacked
(Same function)
4. DEVELOPMENT AND CHALLENGES
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Simple stacked
(Same function)
Medium
integration
(Logic+Memory)
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Simple stacked
(Same function)
Medium
integration
(Logic+Memory)
Multi-function
integration
(Heterogeneous)
4. DEVELOPMENT AND CHALLENGES
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3D IC EDA designDesign
Process
Packaging
Testing
Standard
TSV process yield
Layers bounding and stacking
Chip testing
Technology standard
4. DEVELOPMENT AND CHALLENGES
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Design
2D Design 3D Design
Challenges
Most EDA IC design tools is not capable for interlayer layout design and simulation.
Overall performance, I/O bandwidth, thermal performance is critical
4. DEVELOPMENT AND CHALLENGES
Overcome Approches
Main stream EDA tools companies like Cadence and Synopsis are dedicated to
develop better tools for 3D IC.
25. 25Broadcom Proprietary and Confidential. © 2012 Broadcom Corporation. All rights
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Process
Challenges
Through Silicon Via (TSV) yield is the most critical part in process
High depth/wide ratio may induce void in TSV
Overcome Approaches
Leading foundries like TSMC, Samsung, Global foundries, UMC are dedicated in optimize TSV
process
TSV
Void
4. DEVELOPMENT AND CHALLENGES
26. 26Broadcom Proprietary and Confidential. © 2012 Broadcom Corporation. All rights
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Packaging
Micro bump
4. DEVELOPMENT AND CHALLENGES
Challenges
Interlayer TSV contact quality
Interlayer stacking and bonding
Overcome Approaches
Leading packaging companies like ASE, Amkor, STATS Chip PAC are dedicated in optimize 3D IC
packaging technology and process
27. 27Broadcom Proprietary and Confidential. © 2012 Broadcom Corporation. All rights
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Testing
Challenges
High integration density, hard to test by normal contact test key.
Test individual layer and whole system is reliable, but slow and expensive.
Test whole system is economical, but hard to determine failure.
Overcome Approaches
Design self test and diagnose function in 3D IC design
Develop new testing tool and platform to work with 3D IC design
Test each layer
Test whole system
OR
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Standard
Challenge
Standard is essential for 3D IC to enter volume production
Overcome Approaches
Setup technology standard to guide and regulate 3D IC industry
4. DEVELOPMENT AND CHALLENGES
29. 29Broadcom Proprietary and Confidential. © 2012 Broadcom Corporation. All rights
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PART 4:
BUSINESS OPPORTUNITIES FOR 3D IC
Emile Choo
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Auto-pilot cars
FUTURE APPLICATIONS
Wearable computers and sensors
Future robots
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FUTURE APPLICATIONS
Clothes dryer
Self-sterilizing door handle
Bath or shower