Being authors from Asian countries make it a vulnerable target for Editor to coerce citation. Journal editors can strategically target younger professors from Asian countries. The editor forces authors to add unnecessary citations to an article before the journal will agree to publish it. The editor knows that the authors need to get their papers published and therefore more willing to add any unnecessary citations. This article shows a proof in the IEEE OSA Journal of Display Technology Journal, which has 2 special issues on Recent advances in solid state lighting.
2. Coercive Citation to Asian Authors
Coercive citation is an unethical practice done by ediotrs of academic journal publications. Some editors
coerce authors into adding superfluos citations (of the editor's paper) to the submitted paper before it can be
published. Journal editors want to increase the number of times their own articles being cited by researchers
because it raises the editors citation index and is used to make claims of prestige and importance.
Being authors from Asian countries make it a vulnerable target for Editor to coerce citation. Journal editors
can strategically target younger professors from Asian countries. The editor knows that the authors need to get
their papers published and therefore more willing to add the unnecessary citations.
Here is a proof in the IEEE OSA Journal of Display Technology Journal, who published special issue on
Recent advances in solid state lighting. The Guest Editor is Nelson tansu, a well known professor in electrical
engineering for alleged self citation.
IEEE OSA Journal of Display Technology Volume 9, Issue 4 (April 2013).
http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=6481607&punumber=9425
Each of the papers in the Special issue is analysed and showed that all of the papers cited Tansu unnecessarily
Effects of H2 in GaN barrier spacer layer of InGaN/GaN multiple quantum-well light-emitting diodes.
Lai, W.-C., Yang, Y.-Y. 2013.10 citations to Tansu
1.
Investigating the effect of piezoelectric polarization on GaN-based LEDs with different quantum
barrier thickness. Wang, C.K., Chiang, T.H., Chen, K.Y., Chiou, Y.Z., Lin, T.K., Chang, S.P., Chang,
S.J. 9 citations to Tansu
2.
c) Lateral current spreading effect on the efficiency droop in GaN based light-emitting diodes. Huang,
S., Fan, B., Chen, Z., Zheng, Z., Luo, H., Wu, Z., Wang, G., Jiang, H. 8 citations to Tansu
3.
Effect of polarization-matched n-type AlGaInN electron-blocking layer on the optoelectronic
properties of blue InGaN light-emitting diodes. Li, Y., Gao, Y., He, M., Zhou, J., Lei, Y., Zhang, L.,
Zhu, K., Chen, Y. 11 citations to Tansu
4.
Coercive Citation in Asian Authors
Coercive Citation to Asian Authors 2
3. Effects of initial GaN growth mode on patterned sapphire on the opto-electrical characteristics of
GaN-based light-emitting diodes. Chang, H.-M., Lai, W.-C., Chang, S.-J. 6 citations to Tansu
5.
On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes. Zi-Hui Zhang ;
Tan, S.T. ; Zhengang Ju ; Wei Liu ; Yun Ji ; Kyaw, Z. ; Dikme, Y. ; Xiao Wei Sun ; Demir, H.V. 11
citations to Tansu
6.
Effects of H2 in GaN Barrier Spacer Layer of InGaN/GaN Multiple Quantum-Well Light-Emitting
Diodes. Wei-Chih Lai ; Ya-Yu Yang. 10 citations to Tansu
7.
Improved Carrier Distributions by Varying Barrier Thickness for InGaN/GaN LEDs. Yu, S.F. ;
Ray-Ming Lin ; Chang, S.J. ; Chen, J.R. ; Chu, J.Y. ; Kuo, C.T. ; Jiao, Z.Y. 10 citations to Tansu
8.
Effect of Si Doping Level in n-Cladding Layer on the Performance of InGaN-Based Light-Emitting
Diodes. Zhiyuan Zheng ; Zimin Chen ; Yingda Chen ; Hualong Wu ; Bingfeng Fan ; Zhisheng Wu ;
Gang Wang ; Hao Jiang 7 citations to Tansu
9.
Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped
Hole Injection Layer. Yulun Xian ; Shanjin Huang ; Zhiyuan Zheng ; Bingfeng Fan ; Zimin Chen ;
Zhisheng Wu ; Gang Wang ; Baijun Zhang ; Hao Jiang 9 citations to Tansu
10.
Observation of Electroluminescence From Quantum Wells Far From p-GaN Layer in Nitride-Based
Light-Emitting Diodes. Zhiyuan Zheng ; Zimin Chen ; Yingda Chen ; Hualong Wu ; Shanjin Huang ;
Bingfeng Fan ; Zhisheng Wu ; Gang Wang ; Hao Jiang. 8 citations to Tansu
11.
Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes.
Shanjin Huang ; Bingfeng Fan ; Zimin Chen ; Zhiyuan Zheng ; Hongtai Luo ; Zhisheng Wu ; Gang
Wang ; Hao Jiang . 8 citations to Tansu
12.
First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters.
Chee-Keong Tan ; Jing Zhang ; Xiao-Hang Li ; Guangyu Liu ; Tayo, B.O. ; Tansu, N. 8 citations to
Tansu
13.
Efficiency and Droop Improvement in Hybrid Warm White LEDs Using InGaN and AlGaInP
High-Voltage LEDs. Kuo-Ju Chen ; Hsuan-Ting Kuo ; Yen-Chih Chiang ; Hsin-Chu Chen ;
Chao-Hsun Wang ; Min-Hsiung Shih ; Chien-Chung Lin ; Ching-Jen Pan ; Hao-Chung Kuo 3
citations to Tansu
14.
Enhanced Light Output Power and Growth Mechanism of GaN-Based Light-Emitting Diodes Grown
on Cone-Shaped Patterned Template. Da-Wei Lin ; Jhih-Kai Huang ; Chia-Yu Lee ; Ruey-Wen
Chang ; Yu-Pin Lan ; Chien-Chung Lin ; Kang-Yuan Lee ; Chung-Hsiang Lin ; Po-Tsung Lee ;
Gou-Chung Chi ; Hao-Chung Kuo 6 citations to Tansu
15.
Effects of Initial GaN Growth Mode on Patterned Sapphire on the Opto-Electrical Characteristics of
GaN-Based Light-Emitting Diodes. Hung-Ming Chang ; Wei-Chih Lai ; Shoou-Jinn Chang. 6
citations to Tansu
16.
Analysis of interdiffused InGaN quantum wells for visible light-emitting diodes. Zhao, H., Jiao, X.,
Tansu, N. 10 citations to Tansu
17.
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting
diodes. Zhao, H., Liu, G., Zhang, J., Arif, R.A., Tansu, N. 16 citations to Tansu
18.
Semipolar InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting; Feezell, D.F.
; Speck, J.S. ; DenBaars, S.P. ; Nakamura, S. 1 citation to Tansu
19.
All papers have 6-16 citations to Tansu, and noticed all the authors are from China, Taiwan and Singapore
where an editor can easily coerced the authors.
The only paper that escaped is by Feezell and Shuji Nakamura, a well-known authority in InGaN LED.
This is in accordance with the research by Wilhite and Fong that many journal editors appear to strategically
target certain authors, such as assistant and associate professors (from Asian countries), rather than full
professors (Nakamura), relying on the fact that lower ranking authors may be more willing to add the
unnecessary citations. They also found that while the majority of authors disapprove of the practice, most
Coercive Citation in Asian Authors
3
4. acquiesce and add citations when coerced.
This pattern is observed and more pronounced in the special issue which was continued in Issue 5, Tansu was
again a guest editor for IEEE OSA Journal of Display Technology in Volume 9, Issue 5 (May 2013).
http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=6488740&punumber=9425
FDTD Analysis on Extraction Efficiency of GaN Light-Emitting Diodes With Microsphere Arrays
Zhu, P. ; Liu, G. ; Zhang, J. ; Tansu, N. 12 citations to Tansu
1.
Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D
Close-Packed Microsphere Arrays Xiao-Hang Li ; Peifen Zhu ; Guangyu Liu ; Jing Zhang ; Renbo
Song ; Yik-Khoon Ee ; Kumnorkaew, P. ; Gilchrist, J.F. ; Tansu, N. 11 citations to Tansu
2.
Design and Analysis of â Chess Boardâ Like Photonic Crystal Structure for Improved Light
Extraction in GaN/InGaN LEDs Patra, S.K. ; Adhikari, S. ; Pal, S. 9 citations to Tansu
3.
Improved Light Extraction Efficiency of Nonpolar a-Plane GaN-Based LEDs Based on Embedded
Pyramid-Shape Air-Gap Structure Park, M.J. ; Hwang, S.J. ; Kim, H.J. ; Jung, S. ; Bang, K.H. ; Kim,
H.G. ; Chang, Y. ; Choi, Y. ; Kwak, J.S. 11 citations to Tansu
4.
GaN-Based Light-Emitting Diodes With Step Graded-Refractive Index Micropillar Array Hung-Ming
Chang ; Ya-Yu Yang ; Wei-Chih Lai ; Shuguang Li ; Yu-Ru Lin ; Zhi-Yong Jiao ; Shoou-Jinn
Chang9 citations to Tansu
5.
InGaN-Based Resonant-Cavity Light-Emitting Diodes Fabricated With a Distributed Bragg Reflector
and Metal Reflector for Visible Light Communications Chia-Lung Tsai ; Chih-Ta Yen ; Wei-Jhih
Huang ; Zhong-Fan Xu ; Sun-Chien Ko 14 citations to Tansu
6.
A Stress Analysis of Transferred Thin-GaN Light-Emitting Diodes Fabricated by Au-Si Wafer
Bonding Bo-Wen Lin ; Nian-Jheng Wu ; Wu, Y.C.S. ; Hsu, S.C. 15 citations to Tansu
7.
A GaN-Based LED With Perpendicular Structure Fabricated on a ZnO Substrate by MOCVD Yan Lei
; Jia Xu ; Kebao Zhu ; Miao He ; Jun Zhou ; You Gao ; Li Zhang ; Yulong Chen 9 citations to Tansu
8.
A Highly Power-Efficient LED Back-Light Power Supply for LCD Display Woo-Young Choi 12
citations to Tansu
9.
Analysis and Suppression of Overcurrent in Boost LED Drivers Yuan-Ta Hsieh ; Ying-Zong Juang 11
citations to Tansu
10.
LED Junction Temperature Measurement Using Generated Photocurrent Lock, D.A. ; Hall, S.R.G. ;
Prins, A.D. ; Crutchley, B.G. ; Kynaston, S. ; Sweeney, S.J. 2 citations to Tansu
11.
Light Extracting Properties of Buried Photonic Quasi-Crystal Slabs in InGaN/GaN LEDs Lewins, C.J.
; Allsopp, D.W.E. ; Shields, P.A. ; Gao, X. ; Humphreys, B. ; Wang, W.N. 0 citations to Tansu
12.
Surface-Roughened Light-Emitting Diodes: An Accurate Model David, A. 0 citations to Tansu13.
All papers in this issue have 9-14 citations to Tansu, and noticed the authors are from China, Taiwan, Korea,
India and Singapore where an editor can easily coerced the authors.
Only papers by English authors managed to escape the coercion. This is a big anomaly, why 2 of the
American papers do not quote Tansu in the references while all other papers have 9-14 citations to Tansu?
Not unexpectedly, citation manipulation is observed. The subject gained more than 270 citations from two
special issues, thanks to IEEE OSA Journal of Display Technology.
In conclusion, coercive citation has been found for authors from Asian countries (China, Taiwan, Singapore,
South Korea, india) who are more than willing to cite the editor's paper so their paper can be published easily.
Coercive Citation in Asian Authors
4