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UT-Austin Silicon Valley Event
March 6th, 2013

Roger Bonnecaze, S.V. Sreenivasan, John Ekerdt
Agenda
• NASCENT’s vision and transformational manufacturing
  technologies
   – Roger Bonnecaze, NASCENT co-Director


• NASCENT enabled nanodevices and impact on
  mobile computing
   – S.V. Sreenivasan, NASCENT co-Director


• NASCENT unique facilities for scalable nanofabrication
  and computational nanomanufacturing
   – John Ekerdt, NASCENT Research Thrust Leader




 NASCENT             UT Austin in Silicon Valley Event   2
NASCENT Vision
                                                           Machines,
   Systems                                              Materials, Models
                                                           & Devices
                                                                                  Nano-scale
                                                                                 manufacturers
                                                      Nano-Enabled Electronic,
                                                        Energy & Healthcare
                                                           Device Needs




   Enabling
   Technologies




   Fundamental
   Knowledge



NASCENT           UT Austin in Silicon Valley Event                                          3
NASCENT Transformative
   Nanomanufacturing Systems
• Wafer-scale nanosculpting



• Roll-to-roll (R2R) self-aligned
  nanosculpting and nanomaterials



• Exfoliated silicon


• In-line nanometrology



 NASCENT               UT Austin in Silicon Valley Event   4
Low Fiscal and Environmental Costs
             NASCENT Transformational Technologies



• Low Waste
   – Near-zero waste ink jet functional
   and sacrificial material deposition
   – Efficient use of crystalline materials
   via exfoliation
   – Reuse of expensive materials such
   as copper in graphene fabrication


• Low Fiscal Cost
   – High throughput systems
   – Reliable precision systems
   – Enhanced process yields

 NASCENT                  UT Austin in Silicon Valley Event   5
Research Thrusts
                                    Nanoscale
                                   Manufacturing
                                   and Metrology
                                  Precision, reliability,
                                  metrology, and yield




             Multiscale                                        Nano-Enabled
            Manufacturing                High-                 Mobile Devices
              Modeling                   Value                Optimal design for
          Validated, UQ models           nMfg                device performance
            for scale-up and                                and manufacturability
              process control




                                    Integrated
                                   Nanomaterials
                                 Processable materials
                                    for devices and
                                        machines




NASCENT                    UT Austin in Silicon Valley Event                        6
Agenda
• NASCENT’s vision and transformational manufacturing
  technologies
   – Roger Bonnecaze, NASCENT co-Director


• NASCENT enabled nanodevices and impact on
  mobile computing
   – S.V. Sreenivasan, NASCENT co-Director


• NASCENT unique facilities for scalable nanofabrication
  and computational nanomanufacturing
   – John Ekerdt, NASCENT Research Thrust Leader




 NASCENT             UT Austin in Silicon Valley Event   7
Generic Mobile Computing/Energy Devices
•    GOAL
     Exploit NASCENT transformational nanomanufacturing systems to engineer
     device solutions for mobile computing/energy
      – Wafer scale nanomanufacturing solutions
      – Roll-to-roll nanomanufacturing solutions




    NASCENT                  UT Austin in Silicon Valley Event                8
Competitive Memory Landscape
                                        Flash      Flash
                  SRAM      DRAM                              FeRAM      MRAM       PRAM        RRAM      STT-RAM
                                       (NOR)      (NAND)

Non-volatile       No         No        Yes         Yes        Yes           Yes     Yes         Yes        Yes

Cell size (F2)   50-120      6-10        10          5        15-34      16-40       6-12        6-10      6-20

Read time (ns)    1-100       30         10          50       20-80          3-20   20-50       10-50      2-20

Write/Erase                             1μs/       1 ms/
                  1-100       15                              50/50          3-20   50/120      10-50      2-20
time (ns)                              10 ms       0.1 ms

Endurance          1016      1016        105         105       1012      >1015       108         108       >1015

Write power        Low       Low      Very high   Very high    Low           High    Low         Low       Low

Other power       Current   Refresh
                                       None        None       None       None       None        None       None
consumption      leakage    current

High voltage
                   No         3V        6-8 V      16-20 V    2-3 V          3V     1.5-3 V     1.5-3 V   <1.5 V
required

  Ref: Grandis
                                      Existing Products                                       Prototype




    NASCENT                              UT Austin in Silicon Valley Event                                          9
Project 1: Low Power Logic using STTRAM



                                                       Universal bit line
                                                                Storage layer
                                                                 Barrier
 STT memory cell
                                                                Reference layer
                                                               STT contact pad
      memory
                                                             CMOS contact pad
       plane
                                                            Inter-STT-cell
                                                            dielectric
 Si CMOS logic
& interconnects                                                       MULTI-BIT
                                                                      MEMORY
                                                                      BASED ON
                                                                       STT-RAM

  NASCENT          UT Austin in Silicon Valley Event                            10
Generic Mobile Computing/Energy Devices
•    GOAL
     Exploit NASCENT transformational nanomanufacturing systems to engineer
     device solutions for mobile computing/energy
      – Wafer scale nanomanufacturing solutions
      – Roll-to-roll nanomanufacturing solutions




    NASCENT                  UT Austin in Silicon Valley Event                11
Roll to Roll Nanophotonics
                        Sub-50nm Wire Grid Polarizers (WGP)

 Second Polarizer
      First Polarizer
                                 Traditional
                                 Organic Polarizer
                                  Absorptive film that is
                                  laminated on LCD glass
                                                                       Backlighting



Aluminum lines of a WGP

                                 Large Area
                                 Wire Grid Polarizer
                                  Brighter and higher contrast
                                  with less backlighting               Backlighting
                                   • Improved Contrast Ratio
                                   • Longer Battery Life
                                   • Thinner Display
  50nm half pitch                  • Reduced BoM



     NASCENT                       UT Austin in Silicon Valley Event            12
Smart Cameras:
  Graphene-Polymer Plasmonic Photodiode Architecture




NASCENT           UT Austin in Silicon Valley Event    13
Agenda
• NASCENT’s vision and transformational manufacturing
  technologies
   – Roger Bonnecaze, NASCENT co-Director


• NASCENT enabled nanodevices and impact on
  mobile computing
   – S.V. Sreenivasan, NASCENT co-Director


• NASCENT unique facilities for scalable nanofabrication
  and computational nanomanufacturing
   – John Ekerdt, NASCENT Research Thrust Leader




 NASCENT             UT Austin in Silicon Valley Event   14
NASCENT Infrastructure
 • Nanomanufacturing Process Development
 • Nano-Enabled Device Prototyping
 • Multiscale Modeling and Simulation
 Large Area Wafer-             Leveraged             High Speed R2R
    Scale Facility                                       Facility
                            • Distributed NNIN and
• Exfoliated single crystal   Other Fabrication    • Flex materials
  films, nanomagnetic         Facilities             including carbon
  materials, etc.                                    based & organic
                            • Texas Advanced
                                                     semiconductors
                              Computing Center
                              (TACC)
                         • NanoHUB Resource
                             for Simulations
                Multiscale Modeling and Simulation Facility
               • Scale-Up and Real-Time Decision Making
                           p                              g
     NASCENT
Nanomanufacturing Facility
            Wafer-Scale and R2R Fabrication Facility

• Established processes complemented by NASCENT test-beds

   – Example of wafer-scale fabrication facility




  NASCENT                UT Austin in Silicon Valley Event   16
Cross-cutting Modeling
Vision: Computational tools to rapidly create and evaluate
nanomanufacturing processes and systems.
                                                              Machines,
                                                           Materials, Models
                                                              & Devices
      Nanomanufacturing Systems                                                    Nano-scale
                                                              Nano-Enabled        manufacturers
                                                           Electronic, Energy &
                                                            Healthcare Device
                                                                  Needs


Goals:
• Create multiscale process models for for scale-up, design
  and optimization.
• Derive reduced-order models suitable for fault detection
  and process control.
• Verify, validate and quantify uncertainty in model
  predictions.

Outcome: Accelerated process development and deployment.

 NASCENT               UT Austin in Silicon Valley Event                                     17
NASCENT Summary


                 Transformative Research




          Industry                                       Educating
          Partners                                       Innovators




NASCENT              UT Austin in Silicon Valley Event                18

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Nanomanufacturing Presentation for UT in Silicon Valley 2013

  • 1. UT-Austin Silicon Valley Event March 6th, 2013 Roger Bonnecaze, S.V. Sreenivasan, John Ekerdt
  • 2. Agenda • NASCENT’s vision and transformational manufacturing technologies – Roger Bonnecaze, NASCENT co-Director • NASCENT enabled nanodevices and impact on mobile computing – S.V. Sreenivasan, NASCENT co-Director • NASCENT unique facilities for scalable nanofabrication and computational nanomanufacturing – John Ekerdt, NASCENT Research Thrust Leader NASCENT UT Austin in Silicon Valley Event 2
  • 3. NASCENT Vision Machines, Systems Materials, Models & Devices Nano-scale manufacturers Nano-Enabled Electronic, Energy & Healthcare Device Needs Enabling Technologies Fundamental Knowledge NASCENT UT Austin in Silicon Valley Event 3
  • 4. NASCENT Transformative Nanomanufacturing Systems • Wafer-scale nanosculpting • Roll-to-roll (R2R) self-aligned nanosculpting and nanomaterials • Exfoliated silicon • In-line nanometrology NASCENT UT Austin in Silicon Valley Event 4
  • 5. Low Fiscal and Environmental Costs NASCENT Transformational Technologies • Low Waste – Near-zero waste ink jet functional and sacrificial material deposition – Efficient use of crystalline materials via exfoliation – Reuse of expensive materials such as copper in graphene fabrication • Low Fiscal Cost – High throughput systems – Reliable precision systems – Enhanced process yields NASCENT UT Austin in Silicon Valley Event 5
  • 6. Research Thrusts Nanoscale Manufacturing and Metrology Precision, reliability, metrology, and yield Multiscale Nano-Enabled Manufacturing High- Mobile Devices Modeling Value Optimal design for Validated, UQ models nMfg device performance for scale-up and and manufacturability process control Integrated Nanomaterials Processable materials for devices and machines NASCENT UT Austin in Silicon Valley Event 6
  • 7. Agenda • NASCENT’s vision and transformational manufacturing technologies – Roger Bonnecaze, NASCENT co-Director • NASCENT enabled nanodevices and impact on mobile computing – S.V. Sreenivasan, NASCENT co-Director • NASCENT unique facilities for scalable nanofabrication and computational nanomanufacturing – John Ekerdt, NASCENT Research Thrust Leader NASCENT UT Austin in Silicon Valley Event 7
  • 8. Generic Mobile Computing/Energy Devices • GOAL Exploit NASCENT transformational nanomanufacturing systems to engineer device solutions for mobile computing/energy – Wafer scale nanomanufacturing solutions – Roll-to-roll nanomanufacturing solutions NASCENT UT Austin in Silicon Valley Event 8
  • 9. Competitive Memory Landscape Flash Flash SRAM DRAM FeRAM MRAM PRAM RRAM STT-RAM (NOR) (NAND) Non-volatile No No Yes Yes Yes Yes Yes Yes Yes Cell size (F2) 50-120 6-10 10 5 15-34 16-40 6-12 6-10 6-20 Read time (ns) 1-100 30 10 50 20-80 3-20 20-50 10-50 2-20 Write/Erase 1μs/ 1 ms/ 1-100 15 50/50 3-20 50/120 10-50 2-20 time (ns) 10 ms 0.1 ms Endurance 1016 1016 105 105 1012 >1015 108 108 >1015 Write power Low Low Very high Very high Low High Low Low Low Other power Current Refresh None None None None None None None consumption leakage current High voltage No 3V 6-8 V 16-20 V 2-3 V 3V 1.5-3 V 1.5-3 V <1.5 V required Ref: Grandis Existing Products Prototype NASCENT UT Austin in Silicon Valley Event 9
  • 10. Project 1: Low Power Logic using STTRAM Universal bit line Storage layer Barrier STT memory cell Reference layer STT contact pad memory CMOS contact pad plane Inter-STT-cell dielectric Si CMOS logic & interconnects MULTI-BIT MEMORY BASED ON STT-RAM NASCENT UT Austin in Silicon Valley Event 10
  • 11. Generic Mobile Computing/Energy Devices • GOAL Exploit NASCENT transformational nanomanufacturing systems to engineer device solutions for mobile computing/energy – Wafer scale nanomanufacturing solutions – Roll-to-roll nanomanufacturing solutions NASCENT UT Austin in Silicon Valley Event 11
  • 12. Roll to Roll Nanophotonics Sub-50nm Wire Grid Polarizers (WGP) Second Polarizer First Polarizer Traditional Organic Polarizer Absorptive film that is laminated on LCD glass Backlighting Aluminum lines of a WGP Large Area Wire Grid Polarizer Brighter and higher contrast with less backlighting Backlighting • Improved Contrast Ratio • Longer Battery Life • Thinner Display 50nm half pitch • Reduced BoM NASCENT UT Austin in Silicon Valley Event 12
  • 13. Smart Cameras: Graphene-Polymer Plasmonic Photodiode Architecture NASCENT UT Austin in Silicon Valley Event 13
  • 14. Agenda • NASCENT’s vision and transformational manufacturing technologies – Roger Bonnecaze, NASCENT co-Director • NASCENT enabled nanodevices and impact on mobile computing – S.V. Sreenivasan, NASCENT co-Director • NASCENT unique facilities for scalable nanofabrication and computational nanomanufacturing – John Ekerdt, NASCENT Research Thrust Leader NASCENT UT Austin in Silicon Valley Event 14
  • 15. NASCENT Infrastructure • Nanomanufacturing Process Development • Nano-Enabled Device Prototyping • Multiscale Modeling and Simulation Large Area Wafer- Leveraged High Speed R2R Scale Facility Facility • Distributed NNIN and • Exfoliated single crystal Other Fabrication • Flex materials films, nanomagnetic Facilities including carbon materials, etc. based & organic • Texas Advanced semiconductors Computing Center (TACC) • NanoHUB Resource for Simulations Multiscale Modeling and Simulation Facility • Scale-Up and Real-Time Decision Making p g NASCENT
  • 16. Nanomanufacturing Facility Wafer-Scale and R2R Fabrication Facility • Established processes complemented by NASCENT test-beds – Example of wafer-scale fabrication facility NASCENT UT Austin in Silicon Valley Event 16
  • 17. Cross-cutting Modeling Vision: Computational tools to rapidly create and evaluate nanomanufacturing processes and systems. Machines, Materials, Models & Devices Nanomanufacturing Systems Nano-scale Nano-Enabled manufacturers Electronic, Energy & Healthcare Device Needs Goals: • Create multiscale process models for for scale-up, design and optimization. • Derive reduced-order models suitable for fault detection and process control. • Verify, validate and quantify uncertainty in model predictions. Outcome: Accelerated process development and deployment. NASCENT UT Austin in Silicon Valley Event 17
  • 18. NASCENT Summary Transformative Research Industry Educating Partners Innovators NASCENT UT Austin in Silicon Valley Event 18