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data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. โ€
โ€œ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
3. High collector-emitter voltage
2. OA equipment
PC123/PC123F
PC123/PC123F
s Features (Unit : mm )
s Applications
(Ta= 25หšC)
Creepage distance Space distance
PC123
PC123F 8mm or more 8mm or more
Symbol Ratings Unit
Input
IF 50 mA
IFM 1 A
VR 6 V
P 70 mW
Output
V CEO 70 V
V ECO 6 V
Collector current IC 50 mA
PC 150 mW
V iso 5
Operating temperature T opr - 30 to + 100 หšC
T stg - 55 to + 125 หšC
P tot 200 mW
T sol 260 หšC
Reverse voltage
Collector-emitter voltage
Anode mark
Internal connection diagram
1
2
4
3
1 Anode
2 Cathode
3 Emitter
4 Collector
1
2
4
3
Epoxy resin
PC123
PC123
3
4
2
1
4 Collector
3 Emitter
2 Cathode
1 Anode
3
4
2
1
diagramInternal connection
Anode mark
Epoxy resin
s Outline Dimensions
European Safety Standard
Approved Type Long Creepage
Distance Photocoupler
1. Conform to European Safety Standard
2. Internal isolation distance : 0.4mm or more
( VCEO : 70V)
1. Power supplies
s Absolute Maximum Ratings
Parameter
Forward current
*1
Peak forward current
Power dissipation
Total power dissipation
*2
Isolation voltage
Storage temperature
*3
Soldering temperature
*2 AC for 1 minute, 40 to 60% RH
*3 For 10 seconds
*1 Pulse width<= 100 ยต s, Duty ratio : 0.001
PC123
PC123F
Emitter-collector voltage
Collector power dissipation
6.4mm or more 6.4mm or more
kV rms
1.0ยฑ0.1
1.2ยฑ0.3
6.5ยฑ 0.3
2.54ยฑ0.25
4.58ยฑ0.3
7.62ยฑ 0.3
4.58ยฑ 0.3
0.26ยฑ 0.1 0.5ยฑ 0.1
3.5ยฑ0.5
3.05ยฑ0.5
3.4ยฑ0.5
1.2ยฑ0.3
1.0ยฑ0.1
0.5ยฑ 0.10.26ยฑ 0.1
4.58ยฑ 0.3
7.62ยฑ 0.3
4.58ยฑ0.3
6.5ยฑ 0.3
2.54ยฑ0.25
2.7MIN.
3.5ยฑ0.5
10.16ยฑ 0.5
g DIN-VDE0884 approved type (PC123Y/PC123FY ) is also available as an option.
4. Long creepage distance type
5. Recognized by UL (No. E64380)
Recognized by CSA (No. CA95323)
Approved by VDE (DIN-VDE83601 )
Approved by BSI
Approved by SEMCO (No. 9216212 )
Approved by DEMCO (No. 108954)
Approved by NEMKO (No. 199438181)
Approved by EI (No. 155030)
(BS415 No. 7087, BS7002 No. 7409 )
(Ta= 25หšC)
PC123/PC123F
Parameter Symbol Conditions Unit
Input
Forward voltage VF IF = 20mA - 1.2 1.4 V
IR VR = 4V - - 10 ยต A
Terminal capacitance Ct V= 0, f= 1kHz - 30 250 pF
Output
Collector dark current ICEO VCE F = 0 - - 100 nA
Collector-emitter breakdown voltage BVCEO IC = 0.1mA, I F = 0 70 - - V
Emitter-collector breakdown voltage BVECO IE = 10 ยตA, IF = 0 6 - - V
Transfer
characte-
risitics
Collector current IC IF = 5mA, VCE = 5V 2.5 - 20 mA
Collector-emitter saturation voltage VCE(sat) IF = 20mA, I C = 1mA - 0.1 0.2 V
Isolation resistance 5 x 1010
1011
- โ„ฆ
Floating capacitance Cf V= 0, f= 1MHz - 0.6 1.0 pF
fc
VCE = 5V, I C = 2mA
- 80 - kHz
Response time
Rise time tr VCE = 2V, I C = 2mA
RL = 100โ„ฆ
- 4 18
Fall time t - 3 18
s Electro-optical Characteristics
Reverse current
Cut-off frequency
RISO
RL = 100โ„ฆ, - 3dB
MIN. TYP. MAX.
ยต s
ยต s
0
- 30
10
0 25 50 75 100 125
20
30
40
50
60
Fig. 1 Forward Current vs.
Ambient Temperature
Ambient temperature T a (หšC)
ForwardcurrentIF(mA)
70
25
0
100
80
60
40
20
0 50 100
Fig. 2 Diode Power Dissipation vs.
Ambient Temperature
a (หšC)
- 30
f
DC500V, 40 to 60%RH
DiodepowerdissipationP(mW)
Ambient temperature T
= 50V, I
PC123/PC123F
0
0 125
100
200
50
150
25 50 75 100
Ambient Temperature
- 30
Ambient temperature T a (หšC)
CollectorpowerdissipationPC(mW)
Fig. 3 Collector Power Dissipation vs.
0
250
200
150
50
100
0 25 50 75 100 125
Fig. 4 Power Dissipation vs.
Ambient Temperature
- 30
PowerdissipationPtot(mW)
Duty ratio
5
5
Pulse width <=100ยตs
10
20
100
50
200
500
210 -3 10 -25 2 10 -15 2 5
PeakforwardcurrentIFM(mA)
Fig. 5 Peak Forward Current vs. Duty Ratio
0 0.5 1.0 1.5 2.0 2.5 3.0
1
2
5
10
20
50
100
200
500
+ 25หšC
- 25หšC
50หšC 0หšC
Fig. 6 Forward Current vs.
Forward Voltage
Forward voltage V F (V)
T a
ForwardcurrentIF(mA)
Forward current I F (mA)
CurrenttransferratioCTR(%)
0.1 1 10 100
0
50
100
150
200
250
300
VCE = 5V
T a= 25หšC
Fig. 7 Current Transfer Ratio vs.
Forward Current
Collector-emitter voltage VCE (V)
0 1 2 3 4 5 6 7 8 9 10
0
6
12
18
24
30
36
42
48
54
60
T a = 25หšC
IF
=
30mA
IF
=
20mA
IF= 10mA
IF = 5mA
Fig. 8 Collector Current vs. Collector-emitter
Voltage
CollectorcurrentIC(mA)
= 75หšC
PC(MAX.)
Ta= 25หšC
Ambient temperature T a (หšC)
100010000
5000
2000
1000
1
PC123/PC123F
50
0
100
150
0 25 50 75 100
Relativecurrenttransferratio(%)
- 30
Ambient temperature T a (หšC)
Collector-emittersaturationvoltageVCE(sat)(V)
- 30 0 20 40 60 80 100
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
IF = 20mA
Ic = 1mA
Ambient temperature T a (หšC)
CollectordarkcurrentICEO(A)
- 30 0 20 40 60 80 100
10 - 11
5
10 - 10
5
10 - 9
5
10 - 8
5
10 - 7
5
10 - 6
5
10 - 5
VCE= 50V
Responsetime(ยตs)
0.01 0.1 1 10 100
0.1
1
10
100
VCE = 2V
IC = 2mA
T a= 25หšC
tr
tf
td
ts
Frequency ( kHz )
VoltagegainAv(dB)
0.1 10 100
- 20
1
- 15
- 10
- 5
0
5
VCE = 5V
IC = 2mA
T a= 25หšC
RL = 10k โ„ฆ 1k โ„ฆ 100 โ„ฆ
Forward current I F (mA)
Collector-emittersaturationvoltageVCE(sat)(V)
0 2 4 6 8 10 12 14 16 18 20
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T a= 25หšC
IC = 0.5mA
Fig. 9 Relative Current Transfer Ratio vs.
Ambient Temperature
Fig.10 Collector-emitter Saturation Voltage vs.
Ambient temperature
Fig.11 Collector Dark Current vs.
Ambient Temperature
Fig.12 Response Time vs.
Fig.13 Frequency Response Fig.14 Collector-emitter Saturation Voltage vs.
Forward Currnt
IF = 5mA
VCE = 5V
Ambient temperature T a (หšC)
1mA
3mA
7mA
5mA
1000
1000
Please refer to the chapter โ€œPrecautions for Use โ€
Load Resistance
Load resistance (k โ„ฆ )
q

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Original Opto PC123 P123 123 DIP-4 New

  • 1. data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. โ€ โ€œ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, 3. High collector-emitter voltage 2. OA equipment PC123/PC123F PC123/PC123F s Features (Unit : mm ) s Applications (Ta= 25หšC) Creepage distance Space distance PC123 PC123F 8mm or more 8mm or more Symbol Ratings Unit Input IF 50 mA IFM 1 A VR 6 V P 70 mW Output V CEO 70 V V ECO 6 V Collector current IC 50 mA PC 150 mW V iso 5 Operating temperature T opr - 30 to + 100 หšC T stg - 55 to + 125 หšC P tot 200 mW T sol 260 หšC Reverse voltage Collector-emitter voltage Anode mark Internal connection diagram 1 2 4 3 1 Anode 2 Cathode 3 Emitter 4 Collector 1 2 4 3 Epoxy resin PC123 PC123 3 4 2 1 4 Collector 3 Emitter 2 Cathode 1 Anode 3 4 2 1 diagramInternal connection Anode mark Epoxy resin s Outline Dimensions European Safety Standard Approved Type Long Creepage Distance Photocoupler 1. Conform to European Safety Standard 2. Internal isolation distance : 0.4mm or more ( VCEO : 70V) 1. Power supplies s Absolute Maximum Ratings Parameter Forward current *1 Peak forward current Power dissipation Total power dissipation *2 Isolation voltage Storage temperature *3 Soldering temperature *2 AC for 1 minute, 40 to 60% RH *3 For 10 seconds *1 Pulse width<= 100 ยต s, Duty ratio : 0.001 PC123 PC123F Emitter-collector voltage Collector power dissipation 6.4mm or more 6.4mm or more kV rms 1.0ยฑ0.1 1.2ยฑ0.3 6.5ยฑ 0.3 2.54ยฑ0.25 4.58ยฑ0.3 7.62ยฑ 0.3 4.58ยฑ 0.3 0.26ยฑ 0.1 0.5ยฑ 0.1 3.5ยฑ0.5 3.05ยฑ0.5 3.4ยฑ0.5 1.2ยฑ0.3 1.0ยฑ0.1 0.5ยฑ 0.10.26ยฑ 0.1 4.58ยฑ 0.3 7.62ยฑ 0.3 4.58ยฑ0.3 6.5ยฑ 0.3 2.54ยฑ0.25 2.7MIN. 3.5ยฑ0.5 10.16ยฑ 0.5 g DIN-VDE0884 approved type (PC123Y/PC123FY ) is also available as an option. 4. Long creepage distance type 5. Recognized by UL (No. E64380) Recognized by CSA (No. CA95323) Approved by VDE (DIN-VDE83601 ) Approved by BSI Approved by SEMCO (No. 9216212 ) Approved by DEMCO (No. 108954) Approved by NEMKO (No. 199438181) Approved by EI (No. 155030) (BS415 No. 7087, BS7002 No. 7409 )
  • 2. (Ta= 25หšC) PC123/PC123F Parameter Symbol Conditions Unit Input Forward voltage VF IF = 20mA - 1.2 1.4 V IR VR = 4V - - 10 ยต A Terminal capacitance Ct V= 0, f= 1kHz - 30 250 pF Output Collector dark current ICEO VCE F = 0 - - 100 nA Collector-emitter breakdown voltage BVCEO IC = 0.1mA, I F = 0 70 - - V Emitter-collector breakdown voltage BVECO IE = 10 ยตA, IF = 0 6 - - V Transfer characte- risitics Collector current IC IF = 5mA, VCE = 5V 2.5 - 20 mA Collector-emitter saturation voltage VCE(sat) IF = 20mA, I C = 1mA - 0.1 0.2 V Isolation resistance 5 x 1010 1011 - โ„ฆ Floating capacitance Cf V= 0, f= 1MHz - 0.6 1.0 pF fc VCE = 5V, I C = 2mA - 80 - kHz Response time Rise time tr VCE = 2V, I C = 2mA RL = 100โ„ฆ - 4 18 Fall time t - 3 18 s Electro-optical Characteristics Reverse current Cut-off frequency RISO RL = 100โ„ฆ, - 3dB MIN. TYP. MAX. ยต s ยต s 0 - 30 10 0 25 50 75 100 125 20 30 40 50 60 Fig. 1 Forward Current vs. Ambient Temperature Ambient temperature T a (หšC) ForwardcurrentIF(mA) 70 25 0 100 80 60 40 20 0 50 100 Fig. 2 Diode Power Dissipation vs. Ambient Temperature a (หšC) - 30 f DC500V, 40 to 60%RH DiodepowerdissipationP(mW) Ambient temperature T = 50V, I
  • 3. PC123/PC123F 0 0 125 100 200 50 150 25 50 75 100 Ambient Temperature - 30 Ambient temperature T a (หšC) CollectorpowerdissipationPC(mW) Fig. 3 Collector Power Dissipation vs. 0 250 200 150 50 100 0 25 50 75 100 125 Fig. 4 Power Dissipation vs. Ambient Temperature - 30 PowerdissipationPtot(mW) Duty ratio 5 5 Pulse width <=100ยตs 10 20 100 50 200 500 210 -3 10 -25 2 10 -15 2 5 PeakforwardcurrentIFM(mA) Fig. 5 Peak Forward Current vs. Duty Ratio 0 0.5 1.0 1.5 2.0 2.5 3.0 1 2 5 10 20 50 100 200 500 + 25หšC - 25หšC 50หšC 0หšC Fig. 6 Forward Current vs. Forward Voltage Forward voltage V F (V) T a ForwardcurrentIF(mA) Forward current I F (mA) CurrenttransferratioCTR(%) 0.1 1 10 100 0 50 100 150 200 250 300 VCE = 5V T a= 25หšC Fig. 7 Current Transfer Ratio vs. Forward Current Collector-emitter voltage VCE (V) 0 1 2 3 4 5 6 7 8 9 10 0 6 12 18 24 30 36 42 48 54 60 T a = 25หšC IF = 30mA IF = 20mA IF= 10mA IF = 5mA Fig. 8 Collector Current vs. Collector-emitter Voltage CollectorcurrentIC(mA) = 75หšC PC(MAX.) Ta= 25หšC Ambient temperature T a (หšC) 100010000 5000 2000 1000 1
  • 4. PC123/PC123F 50 0 100 150 0 25 50 75 100 Relativecurrenttransferratio(%) - 30 Ambient temperature T a (หšC) Collector-emittersaturationvoltageVCE(sat)(V) - 30 0 20 40 60 80 100 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 IF = 20mA Ic = 1mA Ambient temperature T a (หšC) CollectordarkcurrentICEO(A) - 30 0 20 40 60 80 100 10 - 11 5 10 - 10 5 10 - 9 5 10 - 8 5 10 - 7 5 10 - 6 5 10 - 5 VCE= 50V Responsetime(ยตs) 0.01 0.1 1 10 100 0.1 1 10 100 VCE = 2V IC = 2mA T a= 25หšC tr tf td ts Frequency ( kHz ) VoltagegainAv(dB) 0.1 10 100 - 20 1 - 15 - 10 - 5 0 5 VCE = 5V IC = 2mA T a= 25หšC RL = 10k โ„ฆ 1k โ„ฆ 100 โ„ฆ Forward current I F (mA) Collector-emittersaturationvoltageVCE(sat)(V) 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 T a= 25หšC IC = 0.5mA Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature Fig.10 Collector-emitter Saturation Voltage vs. Ambient temperature Fig.11 Collector Dark Current vs. Ambient Temperature Fig.12 Response Time vs. Fig.13 Frequency Response Fig.14 Collector-emitter Saturation Voltage vs. Forward Currnt IF = 5mA VCE = 5V Ambient temperature T a (หšC) 1mA 3mA 7mA 5mA 1000 1000 Please refer to the chapter โ€œPrecautions for Use โ€ Load Resistance Load resistance (k โ„ฆ ) q