Allwin21 and main products

Branson/IPC 3000 Software Key Features
Branson/IPC 3000 Specifications*
 Wafer Size: Sample to 200mm Capability. Multiple wafer size without
hardware change
 Throughput: High Throughput. Up to 75 WPH. Process Dependent .
 Temperature: No heating function. N2 plasma can heat the substrate up
to 170 C.
 Gas Lines: Up to 5 gas lines with MFCs. Popular MFC Range: 2 SLM O2
and 1 SLM N2 .
 Asher Rate: 0-0.1u/min. positive PR; >0.2u/min. negative PR
 Uniformity: 25%. Clear all photoresist without uniformity requirement
 Particulate: <0.05 /cm2 (0.03um or greater)
 Damage: Low damage with Faraday Cage if necessary.
 Selectivity: >1000:1
 MTBF/MTTA/MTTR: 450 Hours/100 Hours/3.5 Hours or Better. 95%
uptime
 * Contact Allwin21 sales for other applications and specifications
Main Menu Screen
Tel.: 408-778-7788 E-mail: sales@allwin21.com Website: www.allwin21.com
All specification and information here are subject to change without notice and cannot be used for purchase and facility plan. (2 of 2) Address:220 Cochrane Circle, Morgan Hill,CA95037, U.S.A.
Company Introduction and Main Products
ALLLWIN21 CORP.
Introduction
Equipment Key Features
Allwin21 Corp. is the exclusive licensed manufacturer of AG
Associates Heatpulse 610 Rapid Thermal Process tool. We are
manufacturing the new AccuThermo AW Series Atmospheric and Vacuum
Rapid Thermal Processors. Compared with traditional RTP systems,
Allwin21’s AccuThermo AW RTPs have innovative software and more
advanced real time temperature control technologies to achieve the BEST
rapid thermal processing performance (repeatability, uniformity, and stability)
with decades of research directly applicable to ours.
We focus on extending product lifecycle, providing solutions, and engineering
enhancements to many production proven semiconductor process equipment
most directly related to III-V processing. These semiconductor equipment
have been used in production and R&D since the 1990′s. They have proven
processes and research. Allwin21 Corp. can customize these systems with
Allwin21′s comparable integrated process control system with PC, solid
robotic wafer transfer system, and new critical components. This is to
achieve the goal of giving our customers a production edge, with right cost,
and without having to worry about obsolete parts.
Allwin21 Corp. was formed in 2000 with a focus on professionally providing
Rapid Thermal Process, Plasma Asher Strip / Descum, Plasma Etch/RIE,
Sputter Deposition and Metal Film Metrology high-tech semiconductor
equipment, services and technical support in Semiconductor III-V, MEMS,
Biomedical, Nanotechnology, Solar, Battery & LED industries. We endeavor
to be a leader in our product lines. To achieve this, we have been providing
unique innovative and cost-effective technical solutions, high quality
equipment, and on time spare parts delivery worldwide. We have
maintained a global presence that has grown and expanded into the major
high-tech manufacturing areas of the world. We pride ourselves on
developing and continuing lasting customer relationships.
We understand that a timely responsive support and service are critical
elements in semiconductor industries. Allwin21’s experienced engineer team
is the best guarantee for high quality service and support. We provide
on-site installation, training, maintenance, system optimization, retrofits,
and/or customized upgrades
E-mail: sales@allwin21.com Website: www.allwin21.com
Allwin21 Overview
What sets us apart from the competition…
1) Exclusive licensed manufacturer of Heatpulse 610 of AG Associates.
2) Advanced Allwin21 Real Time PC Control Technology.
3) Focus on Production-Proven process technology.
4) Integrated 3-axis solid robotic wafer transfer technology.
5) Experienced local engineer support.
6) Products made in U.S.A
Allwin21 Products
1) Rapid Thermal Process
• AccuThermo AW 410
• AccuThermo AW 610V
• AccuThermo AW 820V
2) Sputter Deposition
• Perkin-Elmer
44XX Series
• AccuSputter AW 4450
3) Plasma Asher Descum
• AW-105R
• AW-1008
• AW-B3000
4) Plasma Etch/RIE
• AW-901eR
• AW-903eR
• AW-2001R
5) Upgraded Kit for:
• Heatpulse
210
• Heatpulse
410
• Heatpulse
610
• Matrix
X0X
• Tegal
90Xe
• Gasonics
Aura 1000/3000/3010
• Gasonics
AE 2001
• Gasonics
L3510
• Branson/IPC
X000
• Lam AutoEtch
X90
6) Sheet Resistance Measurement
• AWgage-150
• AWgage-200
Plasma Asher, Plasma Descum, Dry Clean,
Semiconductor Equipment, Used
Semiconductor Equipment, Semiconductor
Process Equipment, Matrix 105, Matrix 205,
Matrix 303, Matrix 403,Matrix 106,Matrix
104, Matrix 102,Matrix 101, Matrix 10
Process Equipment, Branson/IPC 2000,
Branson/IPC 3000, Branson/IPC 4000,
Barrel Asher, Barrel Etch, Barrel Etcher
Process Equipment, Gasonics Aura 1000,
Gasonics Aura 2000, Gasonics Aura 3000,
Gasonics L3510, Gasonics Aura 3010
Plasma Etcher, Please Etching, Dry
Etching, Dry Clean, Semiconductor
Equipment, Used Semiconductor
Equipment, Semiconductor Process
Equipment, Tegal 901e, Tegal 903e, Tegal
901e TTW, Tegal 915
Plasma Etcher, Please Etching, Dry
Etching, Dry Clean, Semiconductor
Equipment, Gasonics AE 2001, Microwave
Etcher, Microwave Plasma Etcher,
Microwave Etch
Rapid Thermal Process, Rapid Thermal
Processing, Rapid Thermal Anneal, Rapid
Thermal Annealing, Rapid Thermal
Oxidation, Rapid Thermal Nitride, RTA,
RTP, RTO, RTN,, Semiconductor
Equipment, AG210, AG310, AG 410,
AG610, AG 610I, AG Associates,
Heatpulse 210, Heatpulse 410, Minipulse
310, Heatpulse 610, Heatpulse 610I, AG
Heatpulse 410, AG Heatpulse 610, AG
Heatpulse 210, AG Minipulse 310,
Heatpulse 4100, Heatpulse 4108,
Heatpulse 8108, Heatpulse 8800,
Atmospheric Rapid Thermal Process,
Vacuum Rapid Thermal Process, Furnace,
Oven, Thermal Furnace, Thermal Process,
Thermal Processing

Rapid Thermal Process
ALLLWIN21 CORP.
AccuThermo AW 410
Introduction
The AccuThermo AW410 was derived from the AG Associates 610 production-proven design. Allwin21 Corp. is the exclusive manufacturer of
the AG Associates Heatpulse 610 desktop atmospheric RTP (Rapid Thermal Processing) system. The system uses high intensity visible
radiation to heat single wafer for short process periods of time at precisely controlled temperatures. The process periods are typically 1-600
seconds in duration, although periods of up to 9999 seconds can be selected. These capabilities, combined with the heating chamber's
cold-wall design and superior heating uniformity, provide significant advantages over conventional furnace processing.
AccuThermo AW 410 Key Features
35 years’ production-proven real RTP/RTA/RTO/RTN system.
Scattered IR light by special gold plated Al chamber surface.
Allwin21 advanced Software package with real time control
technologies and many useful functions.
Consistent wafer-to-wafer process cycle repeatability.
Top and bottom High-intensity visible radiation Tungsten halogen
lamp heating for fast heating rates with good repeatability
performance and long lamp lifetime.
Cooling N2 (Or CDA) flows around the lamps and quartz isolation
tube for fast cooling rates
Elimination of external contamination by Isolated Quartz Tube
Up to six gas lines with MFCs and shut-off valves
Energy efficient.
Small Footprint.
Made in U.S.A.
Gas Line(s) 1 2 to 4 5 to 6
Dimension(DXWXH) 17”x18”x11” 17”x26”x11” 17”x30”x11”
 Chip manufacture
 Compound industry: GaAs,GaN,GaP,GaINP,InP,SiC, III-V,II-VI
 Optronics, Planar optical waveguides, Lasers
 Nanotechnology
 Biomedical
 Battery
 MEMS
 Solar
 LED
Introduction
Typical Applications (But not limited to)
 Silicon-dielectric growth
 Implant annealing
 Glass reflow
 Silicides formation and
annealing
 Contact alloying
 Nitridation of metals
 Oxygen-donor annihilation
 Other heat treatment
process
Typical Application Areas:
Rapid Thermal Process, Rapid Thermal Processing, Rapid Thermal Anneal, Rapid Thermal Annealing, Rapid Thermal Oxidation, Rapid Thermal Nitride, RTA, RTP, RTO, RTN,, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, AG210, AG310, AG 410, AG610, AG 610I, AG Associates, Heatpulse 210, Heatpulse 410,
Minipulse 310, Heatpulse 610, Heatpulse 610I, AG Heatpulse 410, AG Heatpulse 610, AG Heatpulse 210, AG Minipulse 310, Heatpulse 4100, Heatpulse 4108, Heatpulse 8108, Heatpulse 8800, Atmospheric Rapid Thermal Process, Vacuum Rapid Thermal Process, Furnace, Oven, Thermal Furnace, Thermal Process, Thermal Processing

ALLLWIN21 CORP.
AccuThermo AW 410 Software Key Features
o Integrated process control system
o Real time graphics display
o Real time process data acquisition, display, and analysis
o Programmed comprehensive calibration and diagnostic functions
o Closed-loop temperature control with temperature sensing.
o Precise time-temperature profiles tailored to suit specific process
requirements.
o Faster, easier Programmable comprehensive calibration of all
subsystems, leading to enhanced process results.
o A recipe editor to create and edit recipes to fully automate the
processing of wafers inside the AccuThermo RTP
o Validation of the recipe so improper control sequences will be
revealed.
o Storage of multiple recipes, process data and calibration files so that
process and calibration results can be maintained and compared over
time.
o Passwords provide security for the system, recipe editing, diagnostics,
calibration and setup functions.
o Simple and easy to use menu screen which allow a process cycle to be
easily defined and executed.
o Troubleshooting feature which allows engineers and service personnel
to activate individual subassemblies and functions. More I/O, AD/DA
“exposure”.
o Use PowerSum technology to detect the process and increase Yield.
o Watchdog function: If this board looses communication with the control
software, it will shut down all processes and halt the system until
communication is restored.
o GEM/SECS II function (Optional).
AccuThermo AW 410 Specifications
 Wafer sizes: Small pieces, 2", 3", 4" wafer capability
 Recommended ramp up rate: Programmable, 10°C to 120°C per
second. Maximum Rate: 200°C (NOT RECOMMENDED)
 Recommended steady state duration: 0-300 seconds per step.
 Ramp down rate: Non-programmable, 10°C to 200°C per second.
 Recommended steady state temperature range: 150°C - 1150°C.
Maximum 1250°C (NOT RECOMMENDED)
 ERP Pyrometer 450-1250°C with ±1°C accuracy when calibrated against
an instrumented thermocouple wafer.
 Thermocouple 100-800±0.5°C with ±0.5°C accuracy & rapid response.
 Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer.
(Repetition specifications are based on a 100-wafer set.)
 Temperature uniformity: ±5°C across a 6" (150 mm) wafer at 1150°C.
(This is a one sigma deviation 100 angstrom oxide.) For a titanium
silicide process, no more than 4% increase in non-uniformity during the
first anneal at 650°C to 700°C.
 Process/Purge gas inputs: Any inert and/or non-toxic gas regulated to 30
PSIG and pre-filtered to 1 micron. Typically, N2, O2, Ar, He, Forming gas,
NH3, N2O2 are used.
AccuThermo AW 410 Configuration
AccuThermo AW 410 Main Frame with wires.
Power Type: Three Phase, worldwide power type(50/60 Hz)
CE Mark if Necessary
Pentium® class computer with a 17-inch LCD monitor and
Allwin21 Corp proprietary software package.
Mouse and standard keyboard .
Aluminum oven chamber with water cooling passages and gold
plating plates..
Door plate with one TC connection port.
Isolated Quartz Tube W/O Pyrometer window or with Pyrometer
Window.
Oven control board and one main control board.
Bottom and top heating with 17 (1.5KW ea) Radiation heating
lamp module with 4 bank zones (Top Front&Rear, Bottom
Front&Rear).
Quartz Tray for 2 to 4 inch round wafer or customized.
Gas line with one Gas MFC without shut-off valve
T-Shaped Quartz with qualified K Type TC and one set holder for
100-800°C temperature measurement.
Package of 5 pieces of thermocouple wires as spare TC
USB with original Software backup.
Options:
 Multiple Process Gases (Up to 6) and MFCs with Extended Gas
Box and Gas Control Board
 Carrier or Susceptor for small sample, transparent substrate and
substrate with metal thin film on top.
 Patented ERP Pyrometer (400-1250°C) as non-contact high
temperature sensor.
 Chiller for ERP Pyrometer
 2-inch, 4-inch TC Wafer, Single Point for Pyrometer calibration
 Omega Meter for Pyrometer and Thermocouple calibration
 Shut-off valve for Quartz Tube&Lamps cooling control
 Spare Parts
Allwin21 Corp.
Address: 220 Cochrane Circle, Morgan Hill,CA95037, U.S.A.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168
Email: sales@allwin21.com
All specification and information here are
subject to change without notice and cannot
be used for purchase and facility plan.

ALLLWIN21 CORP.
AccuThermo AW 610
Introduction
seconds in duration, although periods of up to 9999 seconds can be selected. These capabilities, combined with the heating chamber's cold-wall
design and superior heating uniformity, provide significant advantages over conventional furnace processing.
35 years’ production-proven Real RTP/RTA/RTO/RTN system.
Up to six gas lines with MFCs and shut-off valves
Energy efficient.
Made in U.S.A.
Small footprint
Gas Line(s) 1 2 to 4 5 to 6
Dimension(DXWXH) 17”x18”x11” 17”x26”x11” 17”x30”x11”
 Nanotechnology
 Biomedical
 Battery
 MEMS
 Solar
 LED
Introduction
 Glass reflow
annealing
process

ALLLWIN21 CORP.
requirements.
revealed.
time.
“exposure”.
 Wafer sizes: Small pieces, 2", 3", 4", 5", 6" wafer capability
 Thermocouple 100-800°C with ±0.5°C accuracy & rapid response.
PSIG and pre-filtered to 1 micron. Typically, N2, O2, Ar, He, forming gas,
NH3, N2O2 are used.
Power Type: Three Phase, worldwide power (50/60 Hz)
Mouse and standard keyboard.
plating plates.
Window.
Front&Rear).
Gas line with Gas MFC without shut-off valve.
T-Shape Quartz with qualified K-Type TC and one set holder for
Package of 5 pieces of thermocouple wires as spare TC
Options:
 Multiple Process Gases (Up to 6) and MFCs with Extended Gas
Box and Gas Control Board
temperature sensor.
 2-inch, 4-inch, 6-inch TC Wafer, Single Point for Pyrometer
calibration
 Shutt-off valve for Quartz Tube & Lamps cooling control
 Spare Parts
Allwin21 Corp.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168

ALLLWIN21 CORP.
Rapid Thermal Process Introduction
Allwin21 Corp. is the exclusive licensed manufacturer of AG Associates Heatpulse 610 Rapid Thermal Processing equipment. Allwin21 is manufacturing the new AccuThermo
AW Series Atmospheric Rapid Thermal Processors and Vacuum Rapid Thermal Processors. Compared with traditional RTP systems, Allwin21’s AccuThermo AW RTPs have
innovative software and more advanced temperature control technologies to achieve the BEST rapid thermal processing performance (repeatability, uniformity, and stability) with
decades of research directly applicable to ours.
For many years AG Associates was the dominant manufacturer of RTP systems. It was founded in 1981 and produced the first single wafer RTP system in 1982, the Heatpulse
210. In 1987, it produced the Heatpulse 610. These RTP systems run at atmospheric pressure and rely on a pre-process nitrogen or argon purge prior to wafer processing.
They are still being used around the world in manufacturing, R&D and Universities. These RTP systems have a proven track record for reliability and simplicity.
Rapid thermal processing (or RTP) refers to a semiconductor manufacturing process which heats silicon wafers to high temperatures (up to 1250°C) on a timescale of several
seconds or less. The wafer’s temperature must be brought down slow enough however, so they do not break due to thermal shock… Such rapid heating rates are attained by
high intensity lamps process. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal
reflow and chemical vapor deposition.
Rapid thermal anneal (RTA) is a process used in semiconductor device fabrication which consists of heating a single wafer at a time in order to affect its electrical properties.
Unique heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film-to-film or film-to-wafer substrate interfaces, densify
deposited films, change states of grown films, repair damage from ion implantation, move dopants or drive dopants from one film into another or from a film into the wafer
substrate. Rapid thermal anneals are performed by equipment that heats a single wafer at a time using lamp based heating that a wafer is brought near. Unlike furnace anneals
they are short in duration, processing each wafer in several minutes. Rapid thermal anneal is a subset of processes called Rapid Thermal Process (RTP).
Rapid thermal processing (RTP) provides a way to rapidly heat wafers to an elevated temperature to perform relatively short processes, typically less than 1-2 minutes long. Over
the years, RTP has become essential to the manufacture of advanced semiconductors, where it is used for oxidation, annealing, silicide formation and deposition.
An RTP system heats wafers singly, using radiant energy sources controlled by a pyrometer that measures the wafer’s temperature. Previous thermal processing was based on
batch furnaces, where a large batch of wafers is heated in a tube. Batch furnaces are still widely used, but are more appropriate for relatively long processes of more than 10
minutes.
RTP is a flexible technology that provides fast heating and cooling to process temperatures of ~200-1250°C with ramp rates typically 20-200°C/sec, combined with excellent gas
ambient control, allowing the creation of sophisticated multistage processes within one processing recipe. This capability to process at elevated temperatures for short time
periods is crucial because advanced semiconductor fabrication requires thermal budget minimization to restrict dopant diffusion. Replacement of the slower batch processes with
RTP also enables some device makers to greatly reduce manufacturing cycle time, an especially valuable benefit during yield ramps and where cycle-time minimization has
economic value.
RTP systems use a variety of heating configurations, energy sources and temperature control methods. The most widespread approach involves heating the wafer using banks
of tungsten-halogen lamps because these provide a convenient, efficient and fast-reacting thermal source that is easily controlled. In a typical RTP system , the wafer is heated
by two banks of linear lamps — one above and one below it. The lamps are further subdivided into groups or zones that can be individually programmed with various powers to
maximize temperature uniformity. In RTP, the energy sources face the wafer surfaces rather than heating its edge, as happens in a batch furnace. Thus, RTP systems can
process large wafers without compromising process uniformity or ramp rates. RTP systems frequently incorporate the capability to rotate the wafer for better uniformity.
An important RTP application is the activation of ion-implanted dopants to form ultrashallow junctions. This requires fast ramp and cooling capabilities because the wafer must be
heated to ~1050°C to anneal out ion implantation damage and activate the implanted dopant species. However, the time at temperature must be reduced to minimize diffusion.
This has led to the spike-anneal approach, where the wafer is ramped to a high temperature and then cooled immediately.
Another indispensable RTP application is in the formation of silicides. In this process, metal films react with the silicon on source/drain and gate regions to form silicides. In
advanced logic processes, the metal is usually cobalt, but nickel is being explored for the 65 nm node. Silicide formation processes are usually performed at <500°C, and wafers
must be kept in a very pure gas ambient because metal films can be sensitive to oxidation. RTP systems are ideal, because they have small chamber volumes easily purged with
high-purity gas, creating a very clean environment.
RTP is also increasingly important in oxidation applications, where the capability to use short process times at high temperatures and a wide variety of gas ambients provides
excellent quality films and superior process control. RTP-grown oxides are often used for gate dielectrics, tunnel oxides and shallow-trench isolation liners. The use of steam in
the gas ambient has opened new RTP applications. One of special interest for advanced DRAM technology is the use of a hydrogen-rich steam ambient for selective oxidation of
gate stacks that include tungsten.
Some solar cell companies have successfully applied our advanced Rapid Thermal Processing (RTP) technology to its process for creating highly efficient and durable CIGS
solar cells. This eliminates a key process bottleneck found in many state-of-the-art process implementations and enables the use of low-cost substrates in ways that were not
considered possible before.
In Rapid Thermal Processing, a layer is heated for a very brief period only in a highly controlled way. For instance, RTP techniques can flash-heat a layer for just several
picoseconds and put energy just into the top several nanometers of a layer in a highly controlled way — while leaving the rest of the layer unaffected.
RTP has a secondary benefit of reducing the energy payback time of their solar cells to less than two months (for the full panel). By comparison, a typical silicon solar panel has
an energy payback time of around three years, and a typical vacuum-deposited thin-film cell has one of 1-2 years. The energy payback time is the time that a solar panel has to
be used in order to generate the amount of energy that it required to be produced.
rapid thermal annealing, thermal processing ,annealing furnace ,thermal annealing ,heat treatment furnace ,chemical deposition ,thermal processing equipment ,annealing furnaces ,thermal annealing process ,process of annealing ,bright annealing furnace ,furnace annealing ,annealing equipment ,what is annealing used for, rapid thermal processing , thermal processing ,annealing furnace ,thermal annealing ,thermal processing equipment ,thermal annealing process, thermal processor , processor manufacturing process,RTA,RTP,RTO,RTN, AG 210, AG 310,AG 410,AG 610,AG
610I,AG210,AG410,AG610,AG610I,Heatpulse 210,Heatpulse 410,Heatpulse 610,Heatpulse 610I, AG Associates Heatpulse 210,AG Associates Heatpulse 610,AG ASSOCIATES 610I,Minipulse 310, Minipulse310, Heatpulse210,Heatpulse410,Heatpulse610, Heatpulse610I, AG Associates Heatpulse 4100, Heatpulse 8108,Heatpulse 4108, Heatpulse 8800, Rapid Thermal Process, Rapid Thermal Processing

AccuThermo AW 610V
Introduction
The AccuThermo AW610V is desktop vacuum RTP (Rapid Thermal Processing) system, which uses high
intensity visible radiation to heat single wafer for short process periods of time at precisely controlled
temperatures. The process periods are typically 1-600 seconds in duration, although periods of up to 9999
seconds can be selected. These capabilities, combined with the heating chamber's cold-wall design and
superior heating uniformity, provide significant advantages over conventional furnace processing.
AccuThermo AW 610V Key Features
Vacuum capability RTP/RTA/RTO/RTN system with Top Side
High-intensity visible radiation Tungsten halogen lamp heating
Aluminum oven chamber with water cooling passages
Up to 4 gas lines with 3 gas MFCs and shut-off valves
Energy efficient.
Small footprint: 31(D) X 34(W) X 16(H)
Made in U.S.A.
 Nanotechnology
 Biomedical
 Battery
 MEMS
 Solar
 LED
Introduction
 Glass reflow
annealing
process
ALLLWIN21 CORP.

AccuThermo AW 610V Software Key Features
o Integrated process control system.
o Real time graphics display, process data acquisition, and analysis.
requirements.
revealed.
time.
“exposure”.
o GEM/SECS II (Optional)
AccuThermo AW 610V Specifications
 Wafer sizes: Small pieces, 2", 3", 4", 5", 6" wafer capability
 Vacuum Pressure: 50mTorr to 13 Torr or 13 Torr to 760 Torr
PSIG and pre-filtered to 1 micron. Typically, N2, O2, Ar, He, forming gas,
NH3, N2O2 are used.
AccuThermo AW 610V Configuration
AccuThermo AW 610V Main Frame with wires.
Aluminum oven chamber with water cooling passages.
Top quartz window and heating module with 21 (1.2KW ea)
Radiation lamps with 4 bank zones (Top I Front&Rear, Top II
Front&Rear)..
Two gas lines with Gas MFCs isolation shut-off valves.
T-Shape Quartz with qualified K-Type TC and one holder- for
Package of 5 pieces of thermocouple wires as spare TC.
Main Vacuum Valve
Options:
 Atmospheric process function.
 Vacuum pressure measurement and control function
 Mechanical vacuum pump*
 Dry vacuum pump*
 Multiple Process Gases and MFCs (Up to 3) with Gas Control
Board if necessary.
 Carrier or Susceptor for small sample, Base only.
 Patented Pyrometer (400-1250°C) as non-contact high
temperature sensor.
 Chiller for Pyrometer
 2-inch, 4-inch, 6-inch TC Wafer, Single Point for Pyrometer
calibration
 Omega Meter Thermocouple calibration
 Shutt-off valve for Quartz Tube&Lamps cooling control
 Spare Parts
Allwin21 Corp.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168
ALLLWIN21 CORP.
Rapid Thermal Process, Rapid Thermal Processing, Rapid Thermal Anneal, Rapid Thermal Annealing, Rapid Thermal Oxidation, Rapid Thermal Nitride, RTA, RTP, RTO, RTN,, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, AG210, AG310, AG 410, AG610, AG 610I, AG
Associates, Heatpulse 210, Heatpulse 410, Minipulse 310, Heatpulse 610, Heatpulse 610I, AG Heatpulse 410, AG Heatpulse 610, AG Heatpulse 210, AG Minipulse 310, Heatpulse 4100, Heatpulse 4108, Heatpulse 8108, Heatpulse 8800, Atmospheric Rapid Thermal Process, Vacuum Rapid Thermal Process, Furnace,
Oven, Thermal Furnace, Thermal Process, Thermal Processing

ALLLWIN21 CORP.
AccuThermo AW 810
Introduction
seconds in duration, although periods of up to 9999 seconds can be selected. These capabilities, combined with the heating chamber's
cold-wall design and superior heating uniformity, provide significant advantages over conventional furnace processing.
35 years’ production-proven Real RTP/RTA/RTO/RTN system.
Up to four gas lines with MFCs and shut-off valves
Energy efficiency
Made in U.S.A.
Small footprint
31(D) X 34(W) X 16(H)
 Nanotechnology
 Biomedical
 Battery
 MEMS
 Solar
 LED
Introduction
 Glass reflow
annealing
process

ALLLWIN21 CORP.
requirements.
revealed.
time.
“expose”.
 Wafer sizes: Small pieces, 2", 3", 4", 5", 6", 8" wafer capability
 Temperature uniformity: ±8°C across an 8" (200 mm) wafer at 1150°C.
PSIG and pre-filtered to 1 micron. Typically, N2, O2), Ar, He, forming gas,
NH3, N2O2 are used.
plating plates.
Window.
Front&Rear).
Gas line with one Gas MFC with shut-off valve
Options:
 Multiple Process Gases (Up to 4) and MFCs with Gas Control
Board if necessary.
temperature sensor.
 2-inch, 4-inch, 6-inch, 8-inch (Not recommended) TC Wafer,
Single Point for Pyrometer calibration
 Shutt-off valve for Quartz Tube & Lamps cooling control
 Spare Parts
Allwin21 Corp.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168
Rapid Thermal Process, Rapid Thermal Processing, Rapid Thermal Anneal, Rapid Thermal Annealing, Rapid Thermal Oxidation, Rapid Thermal Nitride, RTA, RTP, RTO, RTN,, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, AG210, AG310, AG 410, AG610,
AG 610I, AG Associates, Heatpulse 210, Heatpulse 410, Minipulse 310, Heatpulse 610, Heatpulse 610I, AG Heatpulse 410, AG Heatpulse 610, AG Heatpulse 210, AG Minipulse 310, Heatpulse 4100, Heatpulse 4108, Heatpulse 8108, Heatpulse 8800, Atmospheric Rapid Thermal Process, Vacuum Rapid Thermal
Process, Furnace, Oven, Thermal Furnace, Thermal Process, Thermal Processing

ALLLWIN21 CORP.
AccuThermo AW 820
Introduction
The AccuThermo AW820 is production-proven stand alone atmospheric RTP (Rapid Thermal Processing)
system, which uses high intensity visible radiation to heat single wafer for short process periods of time at
precisely controlled temperatures. The process periods are typically 1-900 seconds in duration, although periods
of up to 9999 seconds can be selected. These capabilities, combined with the heating chamber's cold-wall
design and superior heating uniformity, provide significant advantages over conventional furnace processing.
Long steady time capability RTP/RTA/RTO/RTN system with big
stand alone frame and fans in the frame.
35 years’ production-proven Real RTP/RTA/RTO/RTN system
Up to five gas lines with MFCs and shut-off valves
Energy efficient.
Made in U.S.A.
Small footprint
38(D) X 39(W) X 70(H)
 Nanotechnology
 Biomedical
 Battery
 MEMS
 Solar
 LED
Introduction
 Glass reflow
annealing
process

ALLLWIN21 CORP.
Integrated process control system
Real time graphics display
Real time process data acquisition, display, and analysis
Programmed comprehensive calibration and diagnostic functions
Closed-loop temperature control with temperature sensing.
Precise time-temperature profiles tailored to suit specific process
requirements.
Faster, easier Programmable comprehensive calibration of all
A recipe editor to create and edit recipes to fully automate the
Validation of the recipe so improper control sequences will be
revealed.
Storage of multiple recipes, process data and calibration files so that
time.
Passwords provide security for the system, recipe editing, diagnostics,
Simple and easy to use menu screen which allow a process cycle to be
Troubleshooting feature which allows engineers and service personnel
“expose”.
Use PowerSum technology to detect the process and increase Yield.
Watchdog function: If this board looses communication with the control
GEM/SECS II function (Optional).
 Wafer sizes: Small pieces, 2", 3", 4", 5", 6" , 8" wafer capability
 Temperature uniformity: ±8°C across an 8" (200 mm) wafer at 1150°C.
NH3, N2O2 are used.
Power Type: Three Phase, worldwide power (50/60 Hz).
CE Mark if Necessary.
Pentium® class computer with a 15-inch touch screen monitor
and Allwin21 Corp proprietary software package.
plating plates.
Window.
Front&Rear).
Gas line with one Gas MFC with shut-off valve.
Options:
 Multiple Process Gases (Up to 5) and MFCs with Gas Control
Board if necessary.
temperature sensor.
 2-inch, 4-inch, 6-inch, 8-inch Not recommended) TC Wafer,
Single Point for Pyrometer calibration
 Spare Parts
Allwin21 Corp.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168
Rapid Thermal Process, Rapid Thermal Processing, Rapid Thermal Anneal, Rapid Thermal Annealing, Rapid Thermal Oxidation, Rapid Thermal Nitride, RTA, RTP, RTO, RTN,, Semiconductor Equipment, Used
Semiconductor Equipment, Semiconductor Process Equipment, AG210, AG310, AG 410, AG610, AG 610I, AG Associates, Heatpulse 210, Heatpulse 410, Minipulse 310, Heatpulse 610, Heatpulse 610I, AG Heatpulse 410, AG
Heatpulse 610, AG Heatpulse 210, AG Minipulse 310, Heatpulse 4100, Heatpulse 4108, Heatpulse 8108, Heatpulse 8800, Atmospheric Rapid Thermal Process, Vacuum Rapid Thermal Process, Furnace, Oven, Thermal Furnace,
Thermal Process, Thermal Processing

ALLLWIN21 CORP.
AccuThermo AW 820V
Introduction
The AccuThermo AW820V is a stand alone Vacuum RTP (Rapid Thermal Processing) system, which uses high
intensity visible radiation to heat single wafer for short process periods of time at precisely controlled
temperatures. The process periods are typically 1-900 seconds in duration, although periods of up to 9999
seconds can be selected. These capabilities, combined with the heating chamber's cold-wall design and
superior heating uniformity, provide significant advantages over conventional furnace processing.
Vacuum capability RTP/RTA/RTO/RTN system with Top and bottom
High-intensity visible radiation Tungsten halogen lamp heating for
fast heating rates with good repeatability performance and long lamp
lifetime.
Up to five gas lines with 4 MFCs and shut-off valves
Energy efficient.
Made in U.S.A.
Small footprint
38(D) X 39(W) X 70(H)
AccuThermo AW 820V
Top&Bottom Lamp Heating Chamber
 Nanotechnology
 Biomedical
 Battery
 MEMS
 Solar
 LED
Introduction
 Glass reflow
annealing
process

ALLLWIN21 CORP.
AccuThermo AW 820V Software Key Features
requirements.
revealed.
time.
“exposure”.
o
AccuThermo AW 820V Specifications
 Wafer sizes: Small pieces, 2", 3", 4", 5", 6", 8" wafer capability
 Vacuum Pressure: 50mTorr to 13 Torr or 13 Torr to 760 Torr
Maxim 1250°C (NOT RECOMMENDED)
 Special quick response K-Type TC temperature accuracy: ±1°C, when
calibrated against an instrumented thermocouple wafer.
 Thermocouple temperature accuracy: ±0.5°C with rapid response.
NH3, N2O2 are used.
AccuThermo AW 820V Configuration
AccuThermo AW 820V Main Frame with wires.
Pentium® class computer with a 15-inch touch screen monitor and
Aluminum oven chamber with water cooling passages.
Top and bottom quartz windows and heating module with 27
(1.2KW ea) Radiation lamps with 4 bank zones (Top Front&Rear,
Bottom Front&Rear).
Two gas lines with one Gas MFC with shut-off valve.
Main Vacuum Valve
Options:
 Atmospheric process function.
 Vacuum pressure measurement and control function
 Turbo pump for up to 10-6 mTorr (NOT RECOMMENDED)
 Mechanical vacuum pump*
 Dry vacuum pump*
 Multiple Process Gases and MFCs (Up to 4) with Gas Control Board
if necessary.
 Special quick response K-Type TC assembly for high temperature
 Omega Meter Thermocouple calibration
 Spare Parts
Allwin21 Corp.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168
Spare Parts
Allwin21 Corp.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168
All specification and information

Sputter Deposition
ALLLWIN21 CORP.
AccuSputter AW 4450
Introduction
Allwin21 Corp. is a leading supplier of sputter deposition equipment for high technology applications for
Semiconductor III-V, II-VI, MEMS, Biomedical, Nanotechnology, Solar, Battery & LED industries. The
AccuSputter AW 4450 is designed for flexibility offering a wide range of operating and process modes. The
highest quality construction, components and Allwin21's new real time AW-4450 System Control assure
reliable operation and an ultra clean vacuum environment to yield consistently reproducible results. Every
AccuSputter AW 4450 sputtering system is supported by years of technological experience and backed by a
worldwide sales and service organization dedicated to prompt courteous service
AccuSputter AW 4450 Key Features
Production-proven sputter technology
Optimum AW-4450 System Control
DC 24V for Motors, Actuator, Relay, Solenoid
Efficient 8" Delta cathodes, 2 to 6" option
Full Pallet rotation control with “indexing”
High Uniformity and Yield
DC, RF Sputter, Pulse DC option
Magnetron and Diode Sputter option
RF Etch and Bias are optional
Ultra Clean vacuum system
Load lock operation
UHV design
Flexible for development or production use
Full range of substrate sizes and shapes
Various pumping and power options
Co-sputtering option
Reactive Sputtering option
AccuSputter 4450 Sputter Materials
Introduction
Al+W Cr/SiO2 SiC Ti+Au
InSnO SiO2 Ti/W Ti+Au+Ni
Al2O3 Mo SiO2+O2 Ni/Fe+Cu+SiO2
Ag MoSi2 Si+N2(Si3N4) Ti/W+Au
Au Mo2Si5 Si+N2+B4C Ti/W+Au+Ta
C Mo5Si3 Ta Ti/W+Al/Si
Cr Ni TaC Ti/W+Ni/Cr+Au
Cr/Co Ni/Cr Ta+Au Ti/W+Pt
Cr/Au Ni+Ni/Cr TaSi2 Al+Ti/W+Ag
Cr+Cu Ni/Fe Ta+SiO2 W+Al2O3
Cr/Si Pt Zr Zn
Cr/SiO TiO2 TiO2+Cr ZnO2

Sputter Deposition
ALLLWIN21 CORP.
AccuSputter AW 4450 Software Key Features
o Maintenance, Manual, Semi Automatic and Fully Automatic modes.
o Automated calibration of all subsystems.
o Troubleshooting to subassembly levels.
o Programmed comprehensive calibration and diagnostic functions.
o Recipe creation for full automatic wafer processing.
o Automatic decline of improper recipes and process data inputs.
o Multi-level password protection.
o Storage of multiple recipes and system functions.
o Real-Time process graphics, data acquisition display, and analysis.
o Process Data and Recipe storage automatically to hard drive.
o Easy TC vacuum gauge calibration.
o Positioning Deposition (optional)
o GEM/SECS II (optional)
Main Frame
28" dia. SST chamber top plate with ports and Cathodes
Configuration I II
Cathode Shape Circle Delta
Cathode Size 8 inch Delta
Cathode Quantity 1 to 4 1 to 3
Sputter Power Supply
Configuration I II III
DC Power 5 KW 10 KW
RF Power 1KW 2 KW 3 KW
Pulse DC Power 5 KW 10 KW
Process Chamber
• 8" diameter X 12" high stainless steel cylinder with 6"
• CF flange viewport and load lock port
• 28" diameter stainless steel base plate
• 11/2" air-operated roughing isolation valve
• Air-operated gas inlet valve
• Air-operated vent valve
• 11/2"blanked-off leak check port
• Removable deposition shields
• 23" diameter, 3-position water-cooled annular substrate
table with variable-speed motorized table drive
• Full circle shutter and vane shutter
• Chain drive pallet carrier transport
• Heavy duty electric hoist
Load lock
• 30" x 28" x 8" stainless steel load lock chamber with
aluminum cover
• 2" air-operated roughing isolation valve
• 23" diameter molybdenum annular substrate pallet
• Elevator for pallet up and down function.
Vacuum Systems for process Chamber
• 2 stage Cryo pump with 1000 l/s pumping speed for air,
including chevron, water-cooled compressor and lines,
automatic regeneration controller and plumbing kit. 71/2"
O.D. (6" ASA) aluminum air-operated gate valve
Air-operated venetian blind throttling valve.
• 36.7 cfm mechanical pump or dry pump for process chamber and
load lock (Optional)
1 gas line with MFC
① Ar, 200 SCCM; ② Customized
New Controller: Allwin21 Corp.'s AW-4450 System PC Control
New Power Distribution Box: AC380V /208V/ 3Phase
AccuSputter AW 4450 Basic Configuration
 GEM/SECS II function (Software)
 More gas lines with MFC
① N2; ② O2; ③ Customized
 Lamp tower alarm with buzzer.
 Mechanical pump or dry pump for process chamber and load lock.
 Independent mechanical pump or dry pump for process chamber.
 Chiller for Cooling plates and table.
 Turbo pump for load lock.
 Load lock Lamp Heating function, Up to 200°C
 Chamber Lamp Heating function, Up to 300°C (Use one cathode port
in SST chamber top plate).
 Plasma etch function (before sputter)
 Bias function
 Co-sputter function
 Reactive sputter function
 Transformer for AC 380V to 208V for DC Power Supply (if necessary).
Options
Production-Proven Chamber/Load lock/Vacuum
Allwin21 Corp.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168
Perkin-Elmer 4400, Perkin-Elmer 4410, Perkin-Elmer 4450,Perkin-Elmer 4480, Perkin-Elmer 2400, Perkin Elmer 4400, Perkin Elmer
4410, Perkin Elmer 4450,Perkin Elmer 4480, Perkin Elmer 2400, Sputter, Magnetron Sputter, Diode Sputter, DC Sputter, RF
Sputter, DC Magnetron Sputter, RF Magnetron Sputter, Co-sputter, Reactive Sputter, MRC, MRC 603, MRC 903, MRC 602, MRC
902, MRC 604, MRC 904, MRC 924, Plasma Etch, Dry Clean, Bias Function, Cathode, Load lock, Degas, Semiconductor
Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment,, Thin Film, Metal Thin Film, Thin Film Deposition,
PVD, Physical Vapor Deposition

Sputter Deposition
ALLLWIN21 CORP.
Perkin-Elmer 4400 Series
Introduction
With an installed base of more than thousands of systems, Perkin-Elmer was a leading supplier of sputter
deposition equipment for high technology application in 1990's. The Perkin-Elmer 4400 Series, fully
refurbished and upgraded by Allwin21 Corp., were designed for flexibility offering a wide range of operating
and process modes. The highest quality construction, components and Allwin21's new AW-4450 System
Control assure reliable operation and an ultra clean vacuum environment to yield consistently reproducible
results. Every fully refurbished and upgraded Perkin Elmer sputtering system was supported by years of
technological experience and backed by a worldwide sales and service organization dedicated to prompt
courteous service
Perkin-Elmer 4400 Series Key Features
Production-proven sputter technology
New optimum AW-4450 System Control
DC 24V for Motors, Actuator, Relay, Solenoid
Efficient 8" Delta cathodes, 2 to 6" option
Full Pallet rotation control with “indexing”
High Uniformity and Yield
DC, RF Sputter, Pulse DC option
Magnetron and Diode Sputter option
RF Etch and Bias are optional
Ultra Clean vacuum system
Load lock operation
UHV design
Flexible for development or production use
Full range of substrate sizes and shapes
Various pumping and power options
Co-sputtering option
Reactive Sputtering option
Approved Sputter Materials
Introduction
Al+W Cr/SiO2 SiC Ti+Au
InSnO SiO2 Ti/W Ti+Au+Ni
Al2O3 Mo SiO2+O2 Ni/Fe+Cu+SiO2
Ag MoSi2 Si+N2(Si3N4) Ti/W+Au
Au Mo2Si5 Si+N2+B4C Ti/W+Au+Ta
C Mo5Si3 Ta Ti/W+Al/Si
Cr Ni TaC Ti/W+Ni/Cr+Au
Cr/Co Ni/Cr Ta+Au Ti/W+Pt
Cr/Au Ni+Ni/Cr TaSi2 Al+Ti/W+Ag
Cr+Cu Ni/Fe Ta+SiO2 W+Al2O3
Cr/Si Pt Zr Zn
Cr/SiO TiO2 TiO2+Cr ZnO2

Sputter Deposition
ALLLWIN21 CORP.
Perkin-Elmer 4400 Series Software Key Features
o Maintenance, Manual, Semi Automatic, and Fully Automatic modes
o Automated calibration of all subsystems
o Troubleshooting to subassembly levels
o Recipe creation for full automatic wafer processing
o Automatic decline of improper recipes and process data
o Multi level pass word protections
o Storage of multiple recipes and system functions
o Real-Time process data acquisition, display, analysis
o Real-Time graphics use display
o Process Data and Recipe storage on a hard drive
o Easy TC vacuum gauge calibration
o Positioning Deposition (optional)
o GEM/SECS II functions (optional)
Main Frame
28" dia. SST chamber top plate with ports and Cathodes
Perkin-Elmer 4400 4410 4450
Cathode Shape Circle Delta
Cathode Size 8 inch Delta
Cathode Quantity 1 to 4 1 to 3
Sputter Power Supply
Perkin-Elmer 4400 4410 4450
DC Power 5 KW ① 5 KW; ② 10 KW
RF Power ①1KW; ②2KW ① 2 KW; ② 3 KW
Pulse DC Power 5 KW ① 5 KW; ② 10 KW
Process Chamber
• 8" diameter X 12" high stainless steel cylinder with 6"
• CF flange viewport and load lock port
• 28" diameter stainless steel base plate
• 11/2" air-operated roughing isolation valve
• Air-operated gas inlet valve
• 11/2"blanked-off leak check port
• Removable deposition shields
• 23" diameter, 3-position water-cooled annular substrate
table with variable-speed motorized table drive
• Full circle shutter and vane shutter
• Heavy duty electric hoist
Load lock
• 30" x 28" x 8" stainless steel load lock chamber with
aluminum cover
• 2" air-operated roughing isolation valve
• 23" diameter molybdenum annular substrate pallet
• Elevator for pallet up and down function.
Vacuum Systems for process Chamber
• 2 stage Cryo pump with 1000 l/s pumping speed for air,
including chevron, water-cooled compressor and lines,
automatic regeneration controller and plumbing kit. 71/2"
O.D. (6" ASA) aluminum air-operated gate valve
Air-operated venetian blind throttling valve.
• 36.7 cfm mechanical pump or dry pump for process chamber and
load lock (Optional)
1 gas line with MFC
① Ar, 200 SCCM; ② Customized
New Controller: Allwin21 Corp.'s AW-4450 System PC Control
New Power Distribution Box: AC380V /208V/ 3Phase
Replaced Obsolete Controls
Perkin-Elmer 4400 Series Basic Configuration
 More gas lines with MFC
① N2; ② O2; ③ Customized
 Lamp tower alarm with buzzer
 Mechanical pump or dry pump for process chamber and load lock
 Independent mechanical pump or dry pump for process chamber.
 Chiller for Cooling plates and table
 Turbo pump for load lock
 Load lock Lamp Heating function, Up to 200°C
 Chamber Lamp Heating function, Up to 300°C (Use one cathode port
in SST chamber top plate).
 Plasma etch function (before sputter)
 Bias function
 Co-sputter function
 Reactive sputter function
 Transformer for AC 380V to 208V for DC Power Supply (if necessary).
Perkin-Elmer 4400 Series Options
Auto Pump Down Controller
Load Lock Controller
Digital Clock Timer
Table Raise / Lower Control
Throttle Valve Control System
Pressure Control System
Sputter Head Controls
Production-Proven Chamber/Load lock/Vacuum
Allwin21 Corp.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168
Perkin-Elmer 4400, Perkin-Elmer 4410, Perkin-Elmer 4450,Perkin-Elmer 4480, Perkin-Elmer 2400, Perkin Elmer 4400, Perkin
Elmer 4410, Perkin Elmer 4450,Perkin Elmer 4480, Perkin Elmer 2400, Sputter, Magnetron Sputter, Diode Sputter, DC Sputter,
RF Sputter, DC Magnetron Sputter, RF Magnetron Sputter, Co-sputter, Reactive Sputter, MRC, MRC 603, MRC 903, MRC 602,
MRC 902, MRC 604, MRC 904, MRC 924, Plasma Etch, Dry Clean, Bias Function, Cathode, Load lock, Degas, Semiconductor
Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment,, Thin Film, Metal Thin Film, Thin Film
Deposition, PVD, Physical Vapor Deposition

Plasma Asher Descum
ALLLWIN21 CORP.
Introduction
AW-105R
The AW-105R single-wafer photoresist asher and descum is an automated tool designed as a flexible
13.56MHz RF Parallel Plate plasma photoresist removal and descum system for high-volume wafer
fabrication. The AW-105R is in direct response to manufacturer’s concerns for wafer uniformity, uptime,
reliability and production-proven technology.
AW-105R Key Features
Production-proven plasma Asher/Descum system.
Integrated solid robotic wafer handling, Single wafer process.
Up to 3%-5% Uniformity. Best for III-V Materials.
Frontside and backside isotropic removal.
Element heating for up to 250o
C.
50mm-150mm wafer capability. Up to 6.25” substrate.
Up to 4 wafer size capability without hardware change.
Fixed cassette station and wafer aligner/cooling station.
Can handle 50um thickness wafer.
PC controller with Advanced Allwin21 Software.
Endpoint detection (EOP) with Allwin21 SLOPE technology (Optional).
Up to 3 gas lines with MFC.
Air-Cooled 600W MKS 13.56 MHz RF Generator (300W Option).
Pressure control with Throttle Valve.
15-inch Touch screen monitor GUI.
EMO, Interlocks, and Watchdog function.
GEM/SECS II (optional).
Small Footprint: 27”W x 40”D x 59”H (280LBs)
Made in U.S.A.
AW-105R Applications
GaAs, InP, GaN, SiC wafer Strip (Mainly)
GaAs, InP, GaN, SiC wafer Descum (Mainly)
Thin Film Head Resist Cleaning
Opto-Electronic Devices Cleaning
MEMS
Photoresist Stripping
 High dose implant (As+
, B+
, P+
)
 Rework
 Post-polysilicon
 Post-metal
 Post-oxide
Controlled Resist Removal
 Post-develop descum
 Uniformity capability (<5% 1σ)
Production-proven Reactor
Integrated Robust Solid Robot
Introduction
Plasma Asher, Plasma Descum, Dry Clean, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, Matrix 105, Matrix 205, Matrix 303, Matrix 403,Matrix 106,Matrix 104,
Matrix 102,Matrix 101, Matrix 10

Plasma Asher Descum
ALLLWIN21 CORP.
Branson/IPC 3000 Specifications*
Allwin21 Corp.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168
AW-105R Software Key Features
o Real time graphics display, process data acquisition, and analysis.
o Closed-loop process parameters control.
o Precise parameters profiles tailored to suit specific process
requirements.
o Programmable comprehensive calibration of all subsystems from within
the software. This allows faster, easier calibration, leading to enhanced
process results.
o Recipe creation to ensure process repeatability. It features a recipe
editor to create and edit recipes to fully automate the processing of
wafers inside the process chamber.
o Validation of the recipe so improper control sequences will be revealed.
o Storage of multiple recipes, process data, and calibration files so that
process & calibration results can be maintained or compared over time.
calibration, and setup functions.
o Troubleshooting features which allows engineers and service personnel
to activate individual subassemblies and functions. More I/O and AD/DA
“exposure”.
o DB-25F parallel (printer) port. The computer interfaces to the Allwin21
system with only one cable: the control interface cable.
o The control board inside the machine that translates the computer
commands to control the machine has a watchdog timer. If this board
loses communication with the control software, it will shut down all
processes and halt the system until communication is restored.
o Advanced Allwin21 End of Process (EOP) function (Optional)
AW-105R Specifications*
 Wafer Size: Up to 6.25 inch.
 Temperature: 60-250ºC (±2ºC)
 Gas Lines: Up to three gas lines with MFCs.
Typical MFC configuration: 5 SLM O2 and 500 SCCM N2.
 Asher Rate: 0.5-1.5 um/min at 200 to 250 ºC, bulk strip; 600 A/min at
100 ºC, Descum
 Uniformity: <±8% (Max-Min) Strip; <±5% (Max-Min) Descum
 Damage: CV:<0.1V from control; Mobile Ion:<1-2 E10 ; Vt :0% total
shift on 98% of points tested no shift >5%
 MTBF/MTTA/MTTR: 450 Hours/100 Hours/3.5 Hours or Better.
 95% uptime
*Contact Allwin21 sales for other applications and specifications
AW-105R Configuration
Main Frame with Circuit Breakers, Solenoid Valves
Pentium Class PC with AW Software
Keyboard, Mouse, USB SW backup, and Cables
Chuck /w Heat, Pump Ring ,Lift Pins
① 2-4 inch; ② 2-6 inch; ③ 4-6 inch; ④ 6.125 inch; ⑤ 6.25 inch
Center Aligner and Cassette Station
① Two Dimensions ② Four Dimensions
Anodized Reactor with Door
Chamber Base plate with water sensor
Base Plate and Reactor Ceramic Ring
Base Plate and Chuck Ceramic Ring
Upper and Lower Electrodes
Quartz showerhead & Diffusion Disk
Main Control and Distribution PCBs
3-axis Integrated Robust Solid Robot
RF Matching Network with PCBs
13.56MHz RF Generator
① 300W ② 600W
MFC /w In-line Filter and Solenoid Isolation Valve
① One MFC; ② Two MFCs; ③ Three MFCs
AC/DC Box with Temperature Controller
MKS Baratron with Isolation Valve
Lamp Tower Alarm w/ Buzzer
Throttle Valve
Main Vacuum Valve
Front EMO, Interlocks
15-inch Touch Screen GUI
Options:
 End-of-Process (EOP)
 GEM/SECS II (Software)
 Vacuum Pump
 Chiller for Chamber Base Plate
AW-105R Facilities
RequirementsPlumbed Process Gases: O2 N2
Cooling water: 1GPM house circulating supply @ <23 ± 2°C
Facility Exhaust: 100 CFM @ 1” static pressure
Vacuum supply for Robot: 11.8”Hg(-5.8psi) / 0.1CFM
airflow
Power: 190-240VAC, single phase, 30A, 50/60Hz (NEMA
L-6-30P plug supplied)
Main Menu Screen

Plasma Asher
ALLLWIN21 CORP.
AW-1008
Introduction
The AW-1008 single-wafer photoresist asher is an automated tool designed as a flexible downstream
Microwave plasma photoresist removal system for high-volume wafer fabrication. The AW-1008 is in direct
response to manufacturer’s concerns for wafer sensitivity to processing RF damage, uptime, reliability and
production-proven technology.
AW-1008 Key Features
Production-proven plasma stripper/Asher system technology.
5-15% Uniformity. (Process & Hardware dependent. Optional.)
Fast strip/ash rate. (Process & Hardware dependent. Optional.)
Increased throughput with 3-Axis Integrated Robust Solid Robot.
Frontside and backside isotropic removal.
3x 1kW IR Lamp for uniform heating up to 500C.
75mm-150mm wafer capability.
Endpoint detection w/Allwin21 SLOPE technology (Optional)
2 wafer sizes capability without hardware change if necessary.
Two Fixed cassette stations. Or, one Fixed & one centering station.
Can handle 50um thickness wafer
PC controller with Advanced Allwin21 Software Package
Up to 4 gas lines with MFC’s
2.45GHz 1000W Microwave
Pressure control with Throttle Valve
Touch screen monitor
EMO, Interlocks, and Watchdog function
GEM/SECS II interface, Optional
Small Footprint : 35”W x 40”D x 55”H (250LBs)
Made in U.S.A.
AW-1008 Applications
Downstream ashing for NO device damage
Frontside and backside isotropic removal
Bulk resist removal
Single wafer process
High-dose implanted resist
Non-oxidizing metal processing
Descum
Production-proven ReactorIntegrated Robust Solid Robot
IntroductionPlasma Asher, Plasma Descum, Dry Clean, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, Gasonics Aura 1000, Gasonics Aura 2000, Gasonics Aura 3000, Gasonics
L3510, Gasonics Aura 3010

Plasma Asher
ALLLWIN21 CORP.
AW-1008 Software Key
Features
Real time graphics display, process data acquisition, and analysis.
Closed-loop process parameters control.
Precise parameters profiles tailored to suit specific process
requirements.
Programmable comprehensive calibration of all subsystems from
within the software. This allows faster, easier calibration, leading to
enhanced process results.
Recipe creation. It features a recipe editor to create and edit recipes
to fully automate the processing of wafers inside the process chamber.
revealed.
time.
calibration and setup functions
Troubleshooting features which allows engineers and service
personnel to activate individual subassemblies and functions. More
I/O, AD/DA “exposure”.
DB-25F parallel (printer) port. The computer interfaces to the
Allwin21 system with only one cable: the control interface cable.
The control board inside the machine that translates the computer
looses communication with the control software, it will shut down all
Advanced Allwin21 EOP function (Optional)
AW-1008 Specifications*
 Wafer Size: 3 ,4,5,6 inch Capability. Multiple wafer size without
hardware charge.
 Temperature: 150-350 ºC (±2 ºC) capability
 Gas Lines: Up to four gas lines with MFCs. Popular MFC Range: 510
SLM O2 and 1 SLM N2.
 Asher Rate: 1.5u-5u/min. positive photoresist; >8u/min. negative
photoresist
 Uniformity: 15%, Process Dependent
 Damage: CV: <0.I V CV-shift for 250A gate oxide
uptime
*Contact Allwin21 sales for other applications and specifications
AW-1008 Configuration
Main Frame with Breakers, Relays and Wires
Keyboard, Mouse, USB with SW backup and Cables
Quartz Tray
① 3-4 inch; ② 4-6 inch; ③ 5 inch; ④ 6 inch; ⑤ Others
Fixed Cassette Station
① Two Cassette Stations; ② One Cassette Station
Lamp Heat Module and Quartz Window (3 of 1000W IR lamp)
6 inch Quartz showerhead and 5 inch Diffusion Disk
Chamber Top Plate and Body with TC for Close Loop
Temperature Control (CLTC)
Main Control, Distributor PCB and DC
H1-7X10.5 Integrated Solid Robot
Waveguide and Quartz Plasma Tube
Blower for Magnetron and Waveguide
Capacitor, Two Transformers, HV Diode
1000W Air cooling magnetron
1-4 Gas Lines w/ Pneumatic Valve, and MFC
① One MFC; ② Two MFCs; ③ Three MFCs; ④ Four MFCs
AC Box and Lamp Control PCB for Close Loop Temperature
Control (CLTC)
Main Vacuum Valves. Two, one for Fast and one for slow pump
down
MKS Baratron
Throttle Valve
Options:
 EOP Module with PCB
 Lamp Tower Alarm function
 1.25kW “Absolute” MW Magnetron with water-cooled Waveguide
with AGL Power Generator.
 Vacuum Pump
Main Menu Screen
Allwin21 Corp.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168

Plasma Asher Descum
ALLLWIN21 CORP.
AW-B3000
Introduction
The AW-B3000 batch/barrel photoresist asher is a manual load tool designed as a flexible 13.56 MHz RF
plasma photoresist removal system for high-volume wafer fabrication. The AW-B3000 is in direct response to
manufacturer’s concerns for Uptime, Reliability, Production-Proven technology. and low cost of ownership.
AW-B3000 Key Features
Production-proven plasma Stripper/Asher/Descum technology.
Up to 25% Uniformity. Much lower if used with a Faraday Cage.
Consistent wafer-to-wafer uniformity.
TC Option can be used with an N2 Plasma to heat the wafers up to
170°C (Chamber) to increase ash rate.
End-of-Process (EOP) Option automatically stops the Process after
all wafers are fully stripped regardless of wafer quantity or
photoresist thickness.
Samples, 6” square, and up to 8” round wafers capable.
Many wafer sizes capability without hardware change.
Can handle different thickness wafer with different carriers.
New controller with PC with Advanced AW Software
Up to 5 isolated gas lines with MFC’s
13.56 MHz RF Generator. (Air-cooled Optional)
Pressure Control Throttle Valve for better process repeatability.
(Optional)
MKS Baratron (Optional)
Touch screen GUI
EMO, Interlocks and Watchdog function
GEM/SECS II (Optional)
Made in U.S.A.
AW-B3000 Applications
Low cost production-proven plasma Asher / Descum
Front and backside isotropic photoresist removal.
Barrel/Batch Manual Load Process
Descum
Introduction
Plasma Asher, Plasma Descum, Dry Clean, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, Branson/IPC 2000, Branson/IPC 3000, Branson/IPC 4000, Barrel Asher, Barrel Etch, Barrel Etcher

Plasma Asher Descum
ALLLWIN21 CORP.
AW-B3000 Software Key Features
Real time graphics display (GUI), process data acquisition, display,
and analysis.
requirements.
Recipe creation. It features a recipe editor to create and edit recipes to
fully automate the processing of wafers inside the process chamber.
revealed.
time.
personnel to activate individual subassemblies and functions. More
I/O, AD/DA “exposure”.
GEM/SEC II function (Optional).
Advanced Allwin21 EOP function (Optional)
AW-B3000 Specifications*
 Wafer Size: Sample to 200mm Capability. Multiple wafer size without
hardware change
 High Throughput: Up to 75 WPH. Process Dependent.
 Temperature: Only TC Option can be used for N2 plasma to heat the
substrates up to 170°C.
 Gas Lines: Up to 5 isolated gas lines with MFCs.
 Asher Rate: 0-0.1u/min. positive PR; >0.2u/min. negative PR. Slower if
Faraday Cage is used
 Uniformity: Up to 25%. Much lower with Faraday Cage.
 Damage: Low damage with Faraday Cage.
 MTBF/MTTA/MTTR: 450 Hours/100 Hours/3.5 Hours or Better.
 95% uptime
* Contact Allwin21 sales for other applications and specifications
AW-B3000 Configuration
Main Body with wires
Control Box
Keyboard, Mouse, USB with SW backup and Cables
Main Control PCB and DC
Transformer, Circuit Breaker,Contactor
1-5 Isolated Gas Lines w/ Pneumatic Valve and MFC
Purge has manual regulator in controller box to control speed.
Quartz Chamber: Dia 12” x Depth 23”;
RF Match Network Integrated in the Main Body of tool.
Chamber Door with quartz plate in the Main Body.
Gas and vacuum lines Connections in the Main Body
13.56MHz RF Generator (Air-Cooled is Optional)
① 300W; ② 600W; ③ 1000W; ④ 1200W
Lamp tower alarm with buzzer
Main Vacuum Valve
MKS Baratron
Throttle Valve
Options:
 End-of-Process (EOP) function.
 Throttle Valve for pressure control.
 Air-cooled RF Generator.
 Thermocouple for Chamber Temperature
 Vacuum Pump
Main Menu Screen
Allwin21 Corp.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168

Plasma Etcher/RIE
ALLLWIN21 CORP.
AW-901eR & AW-903eR
Introduction
The AW-901eR & AW-903eR single-wafer dry etchers are automated tools designed as a flexible 13.56MHz
RF Parallel Plate plasma etching systems for high-volume wafer fabrication. AW-901eR & AW-903eR are in
direct response to manufacturer’s concerns for wafer breakage, Uniformity, Uptime, Reliability, and
Production-Proven technology.
Equipment Key Features
Production-proven plasma etching system.
Up to 3%-5% Uniformity.
Frontside and backside isotropic and anisotropic etch.
Process Temperature: 6-65°C .
75mm-150mm wafer capability.
Integrated solid robotic wafer handling. Single wafer process.
Fixed cassette station and wafer aligner/cooling station.
Can handle 50um thickness wafer.
PC controller with Advanced Allwin21 Software.
Endpoint detection with Allwin21 SLOPE technology. (Optional)
Up to 4 gas lines with MFC’s.
MKS 13.56 MHz RF Air-Cooled Generator 300W, 600W, or 1000W.
Pressure control with UPC. Throttle valve is optional.
Touch screen GUI.
EMO, Interlocks, and Watchdog function.
GEM/SECS II (Optional)
Small Footprint
Made in U.S.A.
AW-901eR, AW-903eR Applications
Polysilicon Etch
Nitride Etch
Silicon Nitride Etch
Silicides Etch
Silicon Dioxide Etch
Polyimide Etch
Polyimide ILD Etch
LDD Spacer Etch
BCB Etch
Introduction
Zero Layer Etch
Backside Etch
Pad Etch
Passivation Etch
Oxide/Contact/Via Etch
(Down to 0.8um)
Titanium/Tantalum Alloy
Resist/SOG Planarization
Descum
Integrated Robust Solid Robot
Plasma Etcher, Please Etching, Dry Etching, Dry Clean, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, Tegal 901e, Tegal
903e, Tegal 901e TTW, Tegal 915

Plasma Etcher/RIE
ALLLWIN21 CORP.
Software Key Features
Real time graphics display, process data acquisition, and analysis.
requirements.
Recipe creation to ensure process repeatability. It features a recipe
editor to create and edit recipes to fully automate the processing of
wafers inside the process chamber.
revealed.
Storage of multiple recipes, process data, and calibration files so that
process & calibration results can be maintained or compared over
time.
calibration, and setup functions.
personnel to activate individual subassemblies and functions. More I/O
and AD/DA “exposure”.
loses communication with the control software, it will shut down all
Advanced Allwin21 Endpoint Detection function (Optional)
AW-901eR, AW-903eR Specifications*
 Up to 6 inch Capability
 Throughput: 30-60 WPH, Process Dependent
 Temperature: 6-65ºC (±2 ºC) capability
 Gas Lines: 4 gas lines with MFCs.
 Etcher Rate: AW-901eR: 0-8000A/minute; AW-903eR:
0-4000A/minute, Process Dependent
 Uniformity: Up to ±3%, Process Dependent
 Selectivity: 901eR: 2-20:1 ; AW-903eR: 2-20:1, Process
Dependent
uptime
 * Contact Allwin21 sales for other applications and specifications
AW-901eR, AW-903eR Configuration
Main Frame, Standard
Keyboard, Mouse, USB with SW backup, and Cables
Chuck
① 3”; ② 4”; ③ 5”; ④ 6”
Wafer Aligner/Cooling Station
3-Axis Integrated Solid Robot
① H-Zero (Standard); ② H1-7X10.5 (TTW)
Fixed Cassette Station
Chuck Assembly
① 901eR Non-anodized; ② 903eR Anodized /W Flat
③ 903eR Anodized /wo Flat ④ 903eR Non-anodized /W Flat
Reactor Assembly
① 901eR Non-anodized; ② 903eR Anodized
③ 903eR Non-anodized; ④ 903eR High Performance
⑤ Direct Cooling; ⑥ Non-Direct Cooling
Pins
① Quartz; ② Ceramic; ③ SST
Centering Ring
① Aluminum; ② Quartz; ③ Ceramic
Main Control Board
Gas Box /w 4 inline Gas Lines, MFC, filters, and Pneumatic valves
RF Matching Network with PCB
13.56 MHz RF Generator (Air or Water Cooled)
① MKS Elite:300HD; ② MKS Elite:600HD
③ MKS Elite:1000HD; ④ ENI ACG 3; ⑤ ENI ACG 10
AC/DC Box
ATM Sensor
UPC Pressure Control
① 225 SCCM,901eR; ② 2000 SCCM, 903eR
MKS Baratron with Pneumatic Isolation Valve
Main Vacuum Valves
Options:
 EOP Module with PCB
 Lamp tower alarm with buzzer
 Throttle Valve Pressure Control
 Vacuum Pump
 Chiller for chuck and chamber
 Through The Wall
Allwin21 Corp.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168
Through The Wall

Plasma Etcher/RIE
ALLLWIN21 CORP.
Comparing AW-901eR and AW-903eR
AW-901eR, AW-903eR Facility Requirements
AC Power: AC Module: 200-240 VAC selectable, 50/60 Hz, 3-wire
single-phase; Temperature Controller: 200-240 VAC, 50/60 Hz, 3-wire
single-phase; Vacuum Pump: 208-230/460 VAC, 60 Hz or
200-220/380 VAC, 50Hz, Three phase; RF Generator: 200-240 VAC;
PC and Monitor: 115 VAC
CDA & N2: CDA, P ressure: 85 + 5 psig (5.98+0.35kg/cm2) filtered
and dry; CDA, Flow: 10 lpm max; N2, Pressure: 15 + 5 psig
(1.41+0.35kg/cm2) filtered and dry - 99.5%; N2, Flow: H2O <10 ppm
filtered to < 0.1micron (absolute), 30 lpm max.
Cabinet Exhaust: 100 cfm (2,832 lpm) minimum.
Items AW-901eR AW-903eR
Applications Silicon Nitride Polyimide
Plating Seed Layers Silicon Oxide
Thin Film Resistors Contact/Via
Photoresist Planarization
 Descum
 PRIST
Polyimide
Pressure Range (Torr) 0-1000mT 0-5000mT
Pressure Control 225 sccm UPC 2000 sccm UPC
MFC(Typical, Customized) 50 sccm O2; 15 sccm N2 ;
60 sccm Argon 50 sccm CHF3
25 sccm CFCl3; 15 sccm SF6
100 sccm SF6 200 sccm He
Upper Electrode Gas inlet and outlet holes are contained in 1 piece Gas inlet and outlet holes are contained in separate pieces
429 inlet holes(0.031 dia) 593 inlet holes(0.008 to 0.016 dia)
120 outlet holes(0.062 dia) 60 outlet holes(0.130 dia)
Coolant flows around outside diameter Coolant flows around outside and through showerhead
Not anodized Showerhead is anodized (exhaust ring is not)
Pins Length (Inches) 1.79 2.125
Water Cooling 1 Chiller 1 or 2 Chiller
Wafer Ring Aluminum Ceramic (99.5% Alumina)
RF Cable to Chuck Different Length (26.25") Different Length (16")
Electrode Gap (mm) 38 6
Lower Electrode Not Anodized, Not Flat Aligned Anodized, Flat Aligned
AW-901eR, AW-903eR Typical Processes
AW-901eR AW-903eR
Material Etched Polysilicon Nitride Oxide,SOG,Nitride
Main Etchant Gases SG6, O2 SF6,O2 CHF3,SF6,He
Other Gases CHCLF2 None None
Pressure(mTorr) 200-450 250-350 1600-3000
RF Power(Watts) 100-250 200-300 400-600
Temperature(C) 30 30 23
Allwin21 Corp.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168

Plasma Etcher
ALLLWIN21 CORP.
AW-2001R
Introduction
The AW-2001R single-wafer Etcher is an automated tool designed as a flexible downstream Microwave
system for high-volume wafer fabrication. AW-2001R is in direct response to manufacturer’s concerns for
wafer damage, uniformity, uptime, reliability and production-proven technology.
AW-2001R Key Features
 Production-proven plasma etching system.
 No damage downstream plasma etcher(≤0.1 Volt CV-shift )
 “Extended” Alumina Plasma Tube for better uniformity.
 Frontside isotropic etch and backside etch if pins-up
 75mm-150mm wafer capability.
 Varied wafer sizes capability without hardware change if necessary.
 Integrated 3-axis robotic wafer handling for increased throughput
and less wafer breakage.
 Optional alignment/cooling station to prevent wafer breakage
 Water-Cooled 1000W Magnetron/Waveguide with an AGL 2.45GHz
Microwave Power Generator for better process repeatability.
 Can handle 50um thickness wafer
 PC controller with Advanced Allwin21 Software Package with touch
screen monitor GUI
 Can handle 50um thickness wafer
 4 isolated gas lines with MFC’s
 Pressure control for process repeatability
 EMO, Interlocks and Watchdog function
 GEM/SECS II interface, Optional
 Light Tower, Optional
 Small Footprint
 Made in U.S.A.
AW-2001R Applications
Contact Slope Etch
Via Etch
BPSG Etch
LTO Etch
TEOS Etch
Thermal Oxide Etch
LPCVD Nitride Etch
PECVD Nitride Etch
Trench Rounding
Descum
RIE Damage Removal
Sodium Removal
Planarization
Backside Etch (Poly, Nitride, or Oxide)
Nitride Pattern Removal (PBL, LOCOS w/ Pad Ox = >400Å)
Low Temp Photoresist Ashing over Oxides, Poly, Al, W, Ti, or
Moly
Introduction

Plasma Etcher
ALLLWIN21 CORP.
AW-2001R Software Key Features
Real time graphics display (GUI), process data acquisition, display, and
analysis.
Precise parameters profiles tailored to suit specific process requirements.
Programmable comprehensive calibration of all subsystems from within
the software. This allows faster, easier calibration, leading to enhanced
process results.
Recipe creation. It features a recipe editor to create and edit recipes to
fully automate the processing of wafers inside the process chamber.
Validation of the recipe so improper control sequences will be revealed.
time.
Troubleshooting features which allows engineers and service personnel to
activate individual subassemblies and functions. More I/O, AD/DA
“exposure”.
DB-25F parallel (printer) port. The computer interfaces to the Allwin21
system with only one cable: the control interface cable.
GEM/SEC II function (Optional).
AW-2001R Specifications*
 Wafer Size: 2, 3, 4, 5, 6 inch Capability.
 Chuck Temperature: 60-110ºC (±2 ºC)
 Gases: NF3 CF4 HE O2
 Uniformity:
 100mm : ± 3% (5% 3 sigma) *
 150mm : ± 5% (8% 3 sigma) *
 *max.- min. /2 x average
 Reproducibility (w-t-w): 10% 3 sigma
 Particulate: 0.05p/cm2 > 0.3µm
 NO DAMAGE: ≤0.1 Volt CV-shift
* Contact Allwin21 sales for other applications and specifications
AW-2001R Configuration
 Main Frame with Breakers, Relays and Wires
 Pentium Class PC with AW Software
 Keyboard, Mouse, USS with SW backup and Cables
 Fixed Cassette Stations:
1) 1 Two Cassette Stations, or
2) One Cassette Station / One Centering/Alignment Station
 Door Assembly
 Metal Shower head
 "Extended' Alumina Plasma Tube for better Uniformity.
 Orifice, Gas Cap
 Chamber Body and Top Plate
 Main Control , Distributor PCB and DC
 H1 -7X10.5 Integrated 3-Axls Solid Robot
 Water-Cooled Magnetron and Waveguide
 Water-Cooled 1000W Magnetron/Waveguide with an AGL
2.45GHz Microwave Power Generator
 4 Isolated Gas Lines with Pneumatic Valves and MFC
 AC Box
 Main & Slow Vacuum Valves
 MKS Baratron
 Throttle Valve
 Front EMO, Interlocks
 15-rnch Touch Screen GUI
Options:
 Light Tower
 Vacuum Pump
Main Menu Screen
Allwin21 Corp.
Tel.: +1-408-778-7788 Fax: +1-408-904-7168
Plasma Etcher, Please Etching, Dry Etching, Dry Clean, Semiconductor Equipment, Used Semiconductor Equipment, Semiconductor Process Equipment, Gasonics AE 2001, Microwave Etcher, Microwave Plasma Etcher, Microwave Etch

Metal Film Metrology
ALLLWIN21 CORP.
AWgage-150
Introduction
AWgage-150 measures sheet resistance in ohms per square or milliohms per square. If specific resistivity is
known, the thickness of the deposited film layer can be computed from the sheet resistance. The choice of
measurement data is easily get in the software. AWgage-150 can accommodate 150mm (6") wafers as well
as the standard 2", 3",4", 5" wafers without any hardware change.
AWgage-150 Key Features
30 years proven Eddy Sheet Resistance Measurement technology.
Non-contact Sheet Resistance Measurement.
1mΩ/square to 19,990Ω/square sheet resistance measurement range.
100Å to 270kÅ Metal Film Thickness range.
Touch Screen Monitor GUI and PC w/ Advanced Allwin21 software.
Wafer carriage travel programmed with internal encoder step motor ,
without encoder disk.
Small footprint and energy efficient.
Made in U.S.A.
AWgage-150 Specifications
• Perform odd number of site tests: 1 to 9 points
• Highly Conductive or Metal Sheet Resistance
1 to 1,999 mΩ/square
1 to 1,999 Ω/square
10 to 19,990 Ω/square
• Highly Conductive or Metal Film Thickness
Minimum: 100 Ångström
Maximum: Proportional to resistivity. Maximum for a
resistivity of 2.7 µΩ-cm is 270 k Å (27 µm)
• Sheet Resistance Repeatability
Total repeatability is the standard deviation (σ) percent of
mean value(X),1 count.
Range s/X (±%)
1 to 100 mW/sq; W/sq 1
100 to 500 mW/sq; W/sq 2
500 to 1000 mW/sq; W/sq 4
1000 to 1,999 mW/sq; W/sq 6
1,999 to 5,000 W/sq Consult Factory
5000 to 10,000 W/sq Consult Factory
10,000 to 15,000 W/sq Consult Factory
Introduction
AWgage-150 Configuration
 Main Frame
 Wafer Carriage (2”-6”)
 Measurement Head
 RF Tank Circuit board
 Pentium® class computer board
 Main control board
 Motor control board.
 Two USB Ports
 Two Extra DB9 Ports
 15–inch touch screen GUI
 Allwin21 Corp proprietary
software package.
 Mouse & keyboard .
 USB Flash Drive with AW
Software backup.
 CE Certification (Optional)
Mgage 200, Mgage 300, M-gage 200, M-gage 300,Sheet Resistant measurement, Metrology, Tencor M-Gage 300,Tencor M-Gage 200, sheet resistance, sheet
resistance Measurement, Semiconductor Equipment, Semiconductor metrology Equipment, KLA-Tencor, Tencor

Allwin21 and main products

Recomendados

Recomendados

Mais conteúdo relacionado

Mais procurados

Mais procurados (20)

Destaque

Destaque (17)

Semelhante a Allwin21 and main products

Semelhante a Allwin21 and main products (20)

Mais de Peter Chen

Mais de Peter Chen (19)

Último

Último (20)

Allwin21 and main products