This document summarizes the modeling of a SiC Schottky Barrier Diode with part number TRS12E65C from Toshiba. It includes the diode model parameters, comparison of simulated and measured forward and reverse characteristics, and junction capacitance. The simulation results match the measurements well with errors generally under 5% validating the accuracy of the diode model.

1. Device Modeling Report
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: TRS12E65C
MANUFACTURER: TOSHIBA
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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2. Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
IS
N
RS
IKF
CJO
M
VJ
ISR
BV
IBV
TT
EG
Model description
Saturation Current
Emission Coefficient
Series Resistance
High-injection Knee Current
Zero-bias Junction Capacitance
Junction Grading Coefficient
Junction Potential
Recombination Current Saturation Value
Reverse Breakdown Voltage(a positive value)
Reverse Breakdown Current(a positive value)
Transit Time
Energy-band Gap
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3. Forward Current Characteristics
Circuit Simulation result
10A
1.0A
100mA
0V
0.5V
1.0V
1.5V
2.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1
U1
TRS12E65C
0Vdc
0
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4. Comparison Graph
Circuit Simulation result
Comparison table
VF (V)
IF (A)
Measurement
Simulation
%Error
0.1
0.810
0.811
0.12
0.2
0.833
0.834
0.12
0.5
0.870
0.872
0.23
1
0.910
0.914
0.44
2
0.980
0.981
0.10
5
1.150
1.150
0.00
10
1.410
1.410
0.00
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5. Junction Capacitance Characteristic
Circuit Simulation result
1.0n
100p
10p
1.0V
I(V2)/(650V/1u)
10V
100V
V(N16610)
Evaluation circuit
V2
0Vdc
V2 = 650
V1 = 0
TD = 0
TR = 1us
TF = 500ns
PW = 100us
PER = 500us
U1
TRS12E65C
V1
0
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6. Comparison Graph
Circuit Simulation result
Comparison table
CT (pF)
VR(V)
Measurement
Simulation
%Error
1
555.000
538.000
-3.06
2
455.000
458.600
0.79
5
355.000
341.100
-3.92
10
280.000
260.000
-7.14
20
198.000
193.300
-2.37
50
127.000
128.300
1.02
100
90.000
94.100
4.56
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7. Reverse Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
25V
50V
100V
150V
175V
I(R1)
V_V1
Evaluation circuit
R1
100m
U1
V1
0Vdc
TRS12E65C
0
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8. Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V)
Measurement
Simulation
%Error
25
4.20E-07
4.20E-07
0.01
100
1.07E-06
1.07E-06
-0.46
175
2.70E-06
2.70E-06
0.01
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