SPICE MODEL of TPCF8102 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: TPCF8102
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. Circuit Configuration
TP CF8 10 2
MOSFET MODEL
Pspice model
Model description
Parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
-0.500 6.097 6.250 2.509
-1.000 8.333 8.621 3.452
-2.000 11.765 11.765 -0.002
-5.000 17.240 17.422 1.053
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Vgs-Id Characteristic
Circuit Simulation result
-10A
-8A
-6A
-4A
-2A
0A
0V -0.5V -1.0V -1.5V -2.0V -2.5V
I(V3)
V_V1
Evaluation circuit
TPCF8102
V3
0Vdc
V1
-4.5Vdc
V2
-10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-0.200 -1.225 -1.242 1.412
-0.500 -1.290 -1.302 0.922
-1.000 -1.370 -1.371 0.044
-2.000 -1.460 -1.471 0.740
-5.000 -1.655 -1.680 1.498
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Rds(on) Characteristic
Circuit Simulation result
-3.0A
-2.0A
-1.0A
-0.1A
0V -20mV -50mV -80mV -110mV -140mV -170mV
I(V3)
V_V2
Evaluation circuit
TPCF8102
V3
0Vdc
V1
-4.5Vdc
V2
-10Vdc
0
Simulation Result
ID=-3.0A, VGS=-4.5V Measurement Simulation Error (%)
R DS (on) 24.000 m 24.000 m 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Gate Charge Characteristic
Circuit Simulation result
-20V
-16V
-12V
-8V
-4V
0V
0 8n 16n 24n 32n 40n
V(W1:2)
Time*1ms
Evaluation circuit
V2
0Vdc
ION = 0uA TPCF8102
IOFF = 1m
W D1
-
I1 = 0 + I2
I1 Dbreak
I2 = 1m W1
TD = 0 -6Adc
TR = 10n
TF = 10n
PW = 600u V1
PER = 1000u -16Vdc
0
Simulation Result
VDD=-16V,ID=-6.0A Measurement Simulation Error (%)
,VGS=-5V
Qgs 4.000 nC 4.000 nC 0.000
Qgd 5.000 nC 5.000 nC 0.000
Qg 19.000 nC 16.956 nC -10.758
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.200 200.000 198.000 -1.000
0.500 160.700 159.000 -1.058
1.000 127.000 125.000 -1.575
2.000 93.000 91.000 -2.151
5.000 55.000 54.450 -1.000
10.000 37.000 36.000 -2.703
20.000 23.000 22.700 -1.304
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Switching Time Characteristic
Circuit Simulation result
-12V
VDD =-10V
Vg = 0/-5.0V
-8V
-4V
0V
4.940us 4.980us 5.020us 5.060us 5.094us
V(2)*2 V(3)
Time
Evaluation circuit
R1 L2 V3
2
3
4.7 30nH 0Vdc
V1 = 0 L1
TPCF8102
V1
V2 = -10
TD = 5u R2 50nH
TR = 6n
TF = 6n 4.7
PW = 5u
PER = 10u RL
0 0 3.33
VDD
-10.05
0
0
Simulation Result
ID=-3.0A, VDD=-10V
Measurement Simulation Error(%)
VGS=0/-5V
ton 13.000 ns 13.576 ns 4.431
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Output Characteristic
Circuit Simulation result
-10A
-2.0V
-8A -1.9V
-1.8V
-6A
-1.7V
-4A -16V
-1.5V
-2A
VGS=-1.4V
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V2
Evaluation circuit
TPCF8102
V3
0Vdc
V1
-4.5Vdc
V2
-10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
-20A
-1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(V2)
V_V3
Evaluation Circuit
R1
0.01m
TPCF8102
V2
0Vdc
0Vdc
V3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VDS (V) VDS (V)
IDR (A) Measurement Simulation %Error
-1.000 0.690 0.697 1.014
-2.000 0.730 0.740 1.370
-5.000 0.810 0.813 0.370
-10.000 0.890 0.894 0.449
-20.000 1.010 1.019 0.891
-1.000 0.690 0.697 1.014
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
14.88us 14.96us 15.04us 15.12us 15.20us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = {-9.7}
V2 = {10.6}
TD = 24.546n
V1
TR = 10n
TF = 10n
PW = 15u
TPCF8102
PER = 100u
0
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 8.800 ns 8.808 ns 0.091
trb 31.200 ns 45.098 ns 44.545
trr 40.000 ns 53.906 ns 34.765
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Reverse Recovery Characteristic Reference
Trj=8.8(ns)
Trb=31.2(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m OPEN
OPEN
OPEN
V1 OPEN
TPCF8102
0Vdc R2
1MEG
0
OPEN
OPEN
OPEN
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005