This document provides a summary of simulation results and measurements for the characteristics of a Toshiba TK65L60V MOSFET and its associated body diode. It includes simulation and measurement data for parameters such as transconductance, threshold voltage, on-resistance, switching time, gate charge, forward current, and reverse recovery characteristics. The simulations show good agreement with measurements, with most values matching to within 1% error.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TK65L60V
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A)
gfs (S)
%Error
Measurement Simulation
2 8.964 8.984 0.22
5 14.230 14.188 -0.30
10 20.130 20.063 -0.33
20 28.345 28.379 0.12
50 44.526 44.760 0.53
100 63.450 63.237 -0.34
120 69.450 69.241 -0.30
VDS=10V

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V_VGS
0V 2V 4V 6V 8V 10V
I(U1:2)
0A
20A
40A
60A
80A
100A
120A
U1
TK65L60V
VGS
V1
10V
0
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Circuit Simulation result
Comparison table
ID (A)
VGS (V)
%Error
Measurement Simulation
1 4.150 4.207 1.37
2 4.350 4.337 -0.29
5 4.600 4.596 -0.08
10 4.875 4.888 0.27
20 5.300 5.301 0.02
50 6.150 6.121 -0.47
100 7.050 7.047 -0.04
120 7.320 7.349 0.39
VDS=10V

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VGS
10V
0
V1
U1
TK65L60V
V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(U1:2)
0A
5A
10A
15A
20A
25A
30A
35A
Rds (on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=10(V), ID=32.5(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 37.000 36.984 -0.04

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V_V1
0V 5V 10V 15V 20V 25V 30V
I(U1:2)
0A
20A
40A
60A
80A
100A
120A
VGS
0
V1
U1
TK65L60V
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS = 5V
8
5.5
7.5
10
6.5
6
7

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Capacitance Characteristics
Simulation result
Comparison table
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
50 519.000 516.415 -0.50
100 338.000 343.941 1.76
200 229.000 228.800 -0.09
500 134.000 133.512 -0.36
600 124.000 119.916 -3.29
Simulation
Measurement

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Time*1mA
0 40n 80n 120n 160n 200n
V(W1:3)
0V
4V
8V
12V
16V
20V
D1
dmod ID
65A
VDD
400V
0
-
+
W1
ION = 0
IOFF = 1mA
WIGTD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
U1
TK65L60V
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=400(V), VGS=10(V), ID=65(A)
Parameter Unit Measurement Simulation %Error
Qgs nC 43.000 42.694 -0.71
Qgd nC 70.000 69.828 -0.25
Qg nC 170.000 170.813 0.48

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Time
1.0us 1.4us 1.8us 2.2us 2.6us 3.0us 3.4us
V(U1:2)/40 V(U1:1)
0V
5V
10V
15V
L1
30nH
1 2
U1
TK65L60V
V1TD = 2u
TF = 4n
PW = 5u
PER = 500u
V1 = 0
TR = 4n
V2 = 10
VDD
400
0
RL
12
L2
50nH
12
R1
10
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit1
Test condition: VDD=400(V), VGS=0/10(V), ID=32.5(A), RG=10, RL=12
Parameter Unit Measurement Simulation %Error
ton ns 160.000 159.950 -0.03

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V_VDS
0V -0.4V -0.8V -1.2V -1.6V -2.0V
I(VDS)
100mA
1.0A
10A
100A
1.0KA
U1
TK65L60VVDS
0
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IDR (A)
-VDS (V)
%Error
Measurement Simulation
0.1 0.574 0.570 -0.71
0.2 0.589 0.590 0.17
0.5 0.617 0.623 0.97
1 0.657 0.654 -0.52
2 0.694 0.690 -0.51
5 0.750 0.749 -0.13
10 0.796 0.805 1.13
20 0.885 0.883 -0.24
50 1.065 1.056 -0.86
100 1.290 1.301 0.86
120 1.400 1.394 -0.41

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Time
2.6us 3.0us 3.4us 3.8us 4.2us 4.6us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1TD = 0.2us
TF = 5ns
PW = 3us
PER = 300us
V1 = -9.4V
TR = 5ns
V2 = 10.7V
R1
50
U1
DTK65L60V_P
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 140.000 140.737 0.53
trb ns 396.000 397.279 0.32
trr ns 536.000 538.016 0.38

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Reverse Recovery Characteristics Reference
trj = 140(ns)
trb = 396(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement