SPICE MODEL of RURD660S , TC=80degree (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL
PART NUMBER: RURD660S
MANUFACTURER: FAIRCHILD
REMARK: TC=80 degree
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

3. Forward Current Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

4. Forward Current Characteristic
Circuit Simulation Result
5.0A
1.0A
100mA
10mA
0.1V 1.0V 2.0V
I(X_U1.D_D1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1
0Vdc RURD660S_80p
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.01 0.448 0.444 0.893
0.02 0.492 0.497 -1.016
0.05 0.570 0.568 0.351
0.1 0.620 0.623 -0.484
0.2 0.684 0.680 0.585
0.5 0.766 0.765 0.131
1 0.840 0.841 -0.119
2 0.934 0.933 0.107
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Capacitance Characteristic
Circuit Simulation Result
1.0n
100p
10p
1.0p
10mV 100mV 1.0V 10V 100V
-I(X_U1.D_D1)/(600V/1u)
V(N00037)
Evaluation Circuit
V2
0Vdc
V2 = 600 V1
V1 = 0 U1
TD = 0
TR = 1u
TF = 10ns RURD660S_80p
PW = 5us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 120.800 120.800 0.000
0.5 77.800 78.159 -0.461
1 62.800 63.576 -1.236
2 50.000 50.173 -0.346
5 35.000 35.500 -1.429
10 27.000 27.200 -0.741
20 20.800 20.893 -0.447
50 14.500 14.454 0.317
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Reverse Recovery Characteristic
Circuit Simulation Result
200mA
100mA
-0mA
-100mA
-200mA
19.92us 20.00us 20.08us 20.16us 20.24us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.39V V1
V2 = 10.71V D1
TD = 0
TR = 10ns
TF = 10ns RURD660S_80s
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj 28.8 ns 28.90 ns 0.347
trb 84.0 ns 84.07 ns 0.083
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. Reverse Recovery Characteristic Reference
Measurement
Trj =28.8 (ns)
Trb= 84.0(ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005