Original N-Channel Mosfet AO4914 4914 SOP-8 New Alpha & Omega Semiconductors

1. AO4914
30V Dual N-Channel MOSFET with Schottky Diode
General Description Product Summary
Q1(N-Channel) Q2(N-Channel)
VDS= 30V 30V
ID= 8A (VGS=10V) 8A (VGS=10V)
RDS(ON) <20.5m RDS(ON) <20.5m (VGS=10V)
RDS(ON) <28m RDS(ON) <28m (VGS=4.5V)
ESD Protected ESD Protected
100% UIS Tested 100% UIS Tested
100% Rg Tested 100% Rg Tested
SCHOTTKY
VDS = 30V, IF = 3A, VF<0.5V@1A
The AO4914 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
Schottky diode is co-packaged in parallel with the
synchronous MOSFET to boost efficiency further.
SOIC-8
Top View Bottom View
G2
S2
G1
S1/A
D2
D2
D1/K
D1/K
Top View
G2
D2
S2
G1
D1
S1
K
A
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
VDS
IFM
TJ, TSTG
°C
A
mJAvalanche energy L=0.1mH C
-55 to 150
TA=70°C
18
Junction and Storage Temperature Range
Power Dissipation B
2
1.3
PD
TA=25°C
1.3
18
2
30
8
A
±20
V
6.5
40
19
W
V±20
Absolute Maximum Ratings TA=25°C unless otherwise noted
Max Q1
Drain-Source Voltage 30
Max Q2
Gate-Source Voltage
UnitsParameter
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
8
ID
TA=25°C
TA=70°C 6.5
40
19
Parameter Units
Reverse Voltage V
Max Schottky
30
ATA=70°C
Pulsed Diode Forward Current C
3
2.2
20
Continuous Forward
Current
TA=25°C
IF
W
TA=70°C
Junction and Storage Temperature Range -55 to 150 °C
2
1.28Power Dissipation B
TA=25°C
PD
SOIC-8
Top View Bottom View
Pin1
G2
S2
G1
S1/A
D2
D2
D1/K
D1/K
Top View
G2
D2
S2
G1
D1
S1
K
A
Rev 11: Mar. 2011 www.aosmd.com Page 1 of 9

2. AO4914
Symbol
t ≤ 10s
Steady-State
Steady-State RθJL
Symbol
t ≤ 10s
Steady-State
Steady-State RθJL
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
°C/W
Parameter Typ Max Units
Maximum Junction-to-Ambient A
RθJA
48 62.5 °C/W
Maximum Junction-to-Ambient A D
74 90
40
74 90
RθJA
Maximum Junction-to-Lead 32 40
°C/W
48
Thermal Characteristics - MOSFET
Parameter Typ Max Units
Maximum Junction-to-Ambient A
62.5 °C/W
Thermal Characteristics - Schottky
Maximum Junction-to-Lead °C/W
°C/WMaximum Junction-to-Ambient A D
32
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 11: Mar. 2011 www.aosmd.com Page 2 of 9

3. AO4914
Symbol Min Typ Max Units
BVDSS 30 V
VR=30V 0.05
VR=30V, TJ=125°C 10
VR=30V, TJ=150°C 20
IGSS 10 µA
VGS(th) Gate Threshold Voltage 1.2 1.8 2.4 V
ID(ON) 40 A
17 20.5
TJ=125°C 23.5 29
20.5 28 mΩ
gFS 30 S
VSD 0.45 0.5 V
IS 3 A
Ciss 575 730 865 pF
Coss 115 165 215 pF
Crss 50 82 120 pF
Rg 0.5 1.1 1.7 Ω
Qg(10V) 12 15 18 nC
Qg(4.5V) 6 7.5 9 nC
Qgs 2.5 nC
Qgd 3 nC
tD(on) 5 nsTurn-On DelayTime
SWITCHING PARAMETERS
Gate resistance VGS=0V, VDS=0V, f=1MHz
Output Capacitance
VDS=0V,VGS=±16V
VDS=VGS ID=250µA
Input Capacitance
Total Gate Charge
VGS=10V, VDS=15V, ID=8A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
DYNAMIC PARAMETERS
VGS=10V, VDS=5V
VGS=10V, ID=8A
mΩ
VGS=4.5V, ID=4A
RDS(ON) Static Drain-Source On-Resistance
Maximum Body-Diode + Schottky Continuous Current
Drain-Source Breakdown Voltage
On state drain current
IS=1A,VGS=0V
VDS=5V, ID=8A
mAIDSS
Zero Gate Voltage Drain Current (Set
by Schottky leakage)
ID=250uA, VGS=0V
VGS=0V, VDS=15V, f=1MHz
Reverse Transfer Capacitance
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
tD(on) 5 ns
tr 3.5 ns
tD(off) 19 ns
tf 3.5 ns
trr 8 ns
Qrr 8 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
Turn-Off Fall Time
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
IF=8A, dI/dt=500A/µsBody Diode Reverse Recovery Time
Turn-On DelayTime
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 11: Mar. 2011 www.aosmd.com Page 3 of 9

4. AO4914
Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
0 5 10 15 20
RDS(ON)(mΩΩΩΩ)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
NormalizedOn-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=4A
VGS=10V
ID=8A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
5
10
15
20
25
30
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=2.5V
3V
10V 4V
5V 3.5V
18
40
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
0 5 10 15 20
RDS(ON)(mΩΩΩΩ)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
NormalizedOn-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=4A
VGS=10V
ID=8A
10
20
30
40
50
2 4 6 8 10
RDS(ON)(mΩΩΩΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
ID=8A
25°C
125°C
0
5
10
15
20
25
30
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=2.5V
3V
10V 4V
5V 3.5V
FET+Schottky
Rev 11: Mar. 2011 www.aosmd.com Page 4 of 9

5. AO4914
Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 3 6 9 12 15
VGS(Volts)
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
300
600
900
1200
1500
0 5 10 15 20 25 30
Capacitance(pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=15V
ID=8A
1
10
100
1000
0.00001 0.001 0.1 10 1000
Power(W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
10µs
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100µs
10ms
0
2
4
6
8
10
0 3 6 9 12 15
VGS(Volts)
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
300
600
900
1200
1500
0 5 10 15 20 25 30
Capacitance(pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=15V
ID=8A
1
10
100
1000
0.00001 0.001 0.1 10 1000
Power(W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10µs
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100µs
10ms
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
ZθθθθJANormalizedTransient
ThermalResistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
Ton
T
PD
Single Pulse
Rev 11: Mar. 2011 www.aosmd.com Page 5 of 9

6. AO4914
Symbol Min Typ Max Units
BVDSS 30 V
VDS=30V, VGS=0V 1
TJ=55°C 5
IGSS 10 µA
VGS(th) Gate Threshold Voltage 1.2 1.8 2.4 V
ID(ON) 40 A
17 20.5
TJ=125°C 23.5 29
20.5 28 mΩ
gFS 30 S
VSD 0.75 1 V
IS 2.5 A
Ciss 600 740 888 pF
Coss 77 110 145 pF
Crss 50 82 115 pF
Rg 0.5 1.1 1.7 Ω
Qg(10V) 12 15 18 nC
Qg(4.5V) 6 7.5 9 nC
Qgs 2.5 nC
Qgd 3 nC
tD(on) 5 ns
tr 3.5 ns
On state drain current
Output Capacitance
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
RDS(ON)
IDSS µA
VDS=VGS ID=250µA
VDS=0V, VGS=±16V
Zero Gate Voltage Drain Current
mΩ
VGS=4.5V, ID=4A
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
Static Drain-Source On-Resistance
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Input Capacitance
Diode Forward Voltage
DYNAMIC PARAMETERS
VGS=10V, VDS=5V
VGS=10V, ID=8A
Gate-Body leakage current
SWITCHING PARAMETERS
Gate Drain Charge
Total Gate Charge
Reverse Transfer Capacitance
VGS=0V, VDS=0V, f=1MHzGate resistance
Total Gate Charge
VGS=10V, VDS=15V, ID=8A
Gate Source Charge
VDS=5V, ID=8A
VGS=0V, VDS=15V, f=1MHz
Forward Transconductance
Turn-On DelayTime
Turn-On Rise Time VGS=10V, VDS=15V, RL=1.8Ω,tr 3.5 ns
tD(off) 19 ns
tf 3.5 ns
trr 6 8 10 ns
Qrr 14 18 22 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-On Rise Time
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
Turn-Off DelayTime
IF=8A, dI/dt=500A/µs
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
Body Diode Reverse Recovery Time
Turn-Off Fall Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 11: Mar. 2011 www.aosmd.com Page 6 of 9

7. AO4914
Q2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
0 5 10 15 20
RDS(ON)(mΩΩΩΩ)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
NormalizedOn-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=4A
VGS=10V
ID=8A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
5
10
15
20
25
30
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=2.5V
3V
10V
3.5V
4V
5V
18
40
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
10
15
20
25
30
0 5 10 15 20
RDS(ON)(mΩΩΩΩ)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
NormalizedOn-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=4A
VGS=10V
ID=8A
10
15
20
25
30
35
40
2 4 6 8 10
RDS(ON)(mΩΩΩΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
ID=8A
25°C
125°C
0
5
10
15
20
25
30
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=2.5V
3V
10V
3.5V
4V
5V
Rev 11: Mar. 2011 www.aosmd.com Page 7 of 9

8. AO4914
Q2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 3 6 9 12 15
VGS(Volts)
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
Capacitance(pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=15V
ID=8A
1
10
100
1000
0.00001 0.001 0.1 10 1000
Power(W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-ID(Amps)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
10µs
10s
1ms
DC
RDS(ON)
TJ(Max)=150°C
TA=25°C
100µs
10ms
0
2
4
6
8
10
0 3 6 9 12 15
VGS(Volts)
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
Capacitance(pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=15V
ID=8A
1
10
100
1000
0.00001 0.001 0.1 10 1000
Power(W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-ID(Amps)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10µs
10s
1ms
DC
RDS(ON)
TJ(Max)=150°C
TA=25°C
100µs
10ms
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
ZθθθθJANormalizedTransient
ThermalResistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
Ton
T
PD
Rev 11: Mar. 2011 www.aosmd.com Page 8 of 9

9. AO4914
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT VddVgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t trd(on)
ton
td(off) tf
toff
Id
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds DSS
2
E = 1/2 LIARAR
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT VddVgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t trd(on)
ton
td(off) tf
toff
VddVgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I F
AR
DSS
2
E = 1/2 LI
dI/dt
I RM
rr
Vdd
Vdd
Q = - Idt
ARAR
trr
Rev 11: Mar. 2011 www.aosmd.com Page 9 of 9