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Magnesium Diboride Thin Films for superconducting RF cavities (Xiaoxing Xi - 40')
Speaker: Xiaoxing Xi - Temple University | Duration: 40 min.
Abstract
MgB2 has a Tc of 40 K, a low residual resistivity, and a high Hc . RF cavities coated with MgB2 films have the potential for a higher Q and gradient than Nb cavities with an operation temperature of 4.2 K or higher. At Temple University, we have started a project to study issues related to the application of MgB2 to RF cavities, and to coat single-cell RF cavities with MgB2 film for characterization by the collaborators in accelerator-compatible environment. The key technical thrust of this project is the deposition of high quality clean MgB2 films and coatings using a hybrid physical-chemical vapor deposition technique. I will review the progress to date in this project.
Xiaoxing Xi - Magnesium Diboride Thin Films for Superconducting RF Cavities
1. Magnesium Diboride Thin Films for Superconducting RF Cavities Xiaoxing Xi Department of Physics Temple University, Philadelphia, PA October 5, 2010 Workshop on Thin Film RF Padua, Italy Supported by DOE/HEP Contributors Chenggang Zhuang, Alex Krick, Teng Tan, Ke Chen, Ed Kaczanowicz Collaborators Enzo Palmieri (INFN), Som Tyagi (Drexel), Steven Alage (Maryland)
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6. Jin et al , SC Sci. Tech. 18, L1 (2005) Surface Resistance vs. Mean Free Length A minimum in the surface resistance when the mean free path is comparable to the coherence length . Nb , 1.5 GHz Nb /Cu Padamsee, SC Sci. Tech. 14, R28 (2001) MgB 2
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8. Single Crystal, Magnetization Powder, Specific Heat Experimental Measurement of H c of MgB 2 Zehetmayer et al , PRB 66, 052505 (2002) Bouquet et al , PRL 87, 047001 (2001)
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11. Larbalestier et al ., Nature 414, 368 (2001) Properties of Various Superconductors 40 0.1 Nb 9.2 0.4 40 2 NbN 16.2 15 200 70 7 22 3.6
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13. Hybrid Physical-Chemical Vapor Deposition get rid of oxygen prevent oxidation make high Mg pressure possible generate high Mg pressure: required by thermodynamics pure source of B B supply (B 2 H 6 flow rate) controls growth rate Pure source of Mg high enough T for epitaxy Schematic View Substrate H 2 (~100 Torr) B 2 H 6 (~ 5 - 250 sccm) Mg Susceptor 550–760 °C
14. Clean, Epitaxial HPCVD MgB 2 Films Xi et al , Physica C 456, 22 (2007) Wu et al. , APL 85, 16 (2004) SiC MgB 2 interface
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17. MgB 2 Film by Reactive Co-Evaporation Moeckly and Ruby, SUST 19, L21 (2006)
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19. High-Temperature Ex-Situ Annealing Kang et al , Science 292, 1521 (2001) Eom et al , Nature 411, 558 (2001) Ferdeghini et al , SST 15, 952 (2001) Berenov et al , APL 79, 4001 (2001) Vaglio et al , SST 15, 1236 (2001) Moon et al , APL 79, 2429 (2001) Fu et al , Physica C377, 407 (2001) B Mg Low Temperature ~ 850 °C in Mg Vapor Epitaxial Films
20. MgB 2 Film by Reaction of CVD B Film Clean B precursor layer leads to clean MgB 2 film.
28. Cavity Coating Setup at Temple Resistive tube furnace will be installed in the existing HPCVD system Integrated HPCVD system: Two HPCVD systems, one sputtering system, and one distribution chamber connected together. Cavity Up Cavity Down
29. Coating SRF Cavity with a Two-Step Process Coating cavity with B layer at ~400-500°C using CVD Reacting with Mg to form MgB 2 at ~ 850-900 °C in Mg vapor Mg vapor H 2 , B 2 H 6
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31. Low-Field Microwave Magnetoabsorption 1000 G 1500 G 0 G 9.3 GHz Thickness: 100 nm Value much higher than experimental and predicted value (~ 20 mT) To be understood. dH c1 / dT =25 mT/K 20 30 40 Temperature (K) Absorption T (K) H c1 (G) 28 1500 30 1000 32 0
32. Microwave Surface Impedance Measurement Advantages: Measures transition and homogeneity of sample Fast: built for a continuous flow cryostat Can be used for quantitative R s measurements if required Disadvantages: sample is pressed against a plate (this could be relaxed) The dielectric puck is attached to the sample with grease 24.7 GHz resonance A resonance of the dielectric puck is excited. It’s properties are modified by the superconducting film underneath Prof. Steven Anlage, U. of Maryland
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Notas do Editor
Content Slide Notes “ UNCLASSIFIED ” marking of slides is not a security requirement and may be deleted from the Slide Master (View › Master › Slide Master). In general, slides should be marked “ UNCLASSIFIED ” if there is potential for confusion or misinterpretation of something that could be deemed classified. For guidance on marking slides containing classified and unclassified controlled information, see the Protecting Information Web site at http://int.lanl.gov/security/protectinfo/ .
From a thermodynamic point of view, the deposition techniques that have certain degrees of success in growing MgB2 films can be categorized into high-temperature, intermediate temperature and low temperature processes according to the highest processing temperature used. In a typical high temperature annealing in Mg vapor technique, B films is first deposited at room temperature, then sealed in Ta tube with bulk Mg and annealed at 850 degrees C an up. Because Mg is heated in an enclosure, the Mg vapor pressure can be very high, which allows the high temperature processing. The phase space of the operating conditions is indicated here. Because of the high processing temperature, epitaxial growth is achieved, and the films have excellent superconducting properties.
Content Slide Notes “ UNCLASSIFIED ” marking of slides is not a security requirement and may be deleted from the Slide Master (View › Master › Slide Master). In general, slides should be marked “ UNCLASSIFIED ” if there is potential for confusion or misinterpretation of something that could be deemed classified. For guidance on marking slides containing classified and unclassified controlled information, see the Protecting Information Web site at http://int.lanl.gov/security/protectinfo/ .