1. Advancements For Sub 45nm
Fixed Abrasive STI CMP
John Gagliardi, Andrey Zagrebelny,
Gagliardi Andre Zagrebeln
Bill Joseph, Larry Zazzera
3M Company
p y
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
2. Outline
• Background
– Timeline of developments leading to Advancements for
Sub 45 nm FA STI CMP
– The FA Process and Outstanding Planarization
• Current FA STI CMP Roadmap
– 65 nm, 45 nm and Sub 45 nm
• Advancements for 45 nm and sub 45 nm
– Chemistry
– Abrasive
– CMP process and performance
• Summary and Conclusion
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
3. Microreplicated Fixed Abrasive
30 µm hexagonal composites of ceria and organic bond
125 µm
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
4. 3M Laboratory’s Reflexion Web™ CMP Polisher
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
5. Development Timelines
Leading to advancements for sub 45 nm
2001 – Third Generation of FA Development was completed
• Close collaboration with tool builder and semiconductor fabs
2002 - AMAT’s Reflexion™ Web Ready Numerous Technical
• FA production tool available to Industry papers published by
• 2-Step process developed industry leaders:
• Selective Chemistry with FA UMC, Infineon, IBM,
Cypress, Hyundai,
2003 – FA In Production AMD, 3M, AMAT, SEMI
• 3 Fabs take FA into production
F b t k i t d ti Europa, Hyundai, VIT
2004/2005 – Expanding Production and others
• IBM and UMC publish prominent technical papers
2006 – Sub 45nm FA STI CMP Development begins
• New abrasives, chemistry and subpads
• Low pressure surfactant process taken into production at 45nm
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
6. Process Approach to attain superior
planarization
3M SWR550 FA
Selective Chemistry
DI Water Buff P3 No Conditioning
Politex Pad Buff 5k-10k wafer Life
Pre-
Fixed
Planarization Abrasive
Web
P1 Pre-Planarize
P1 P2 P2 Clear and Stop
Conventional Pre
Pre- P3 Remove Ceria
Planarization FA Process
3M Diamond Conditioner
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
7. Planarization Comparison
• Outstanding Planarization
– Low trench oxide dishing/range; low nitride erosion/range
Reference: B. Reinhold, J. Groschopf, 2006
hing
Slurry
y International Conference on Planarization/CMP
ized Dish
Technology (2006 ICPT), October 12-13, 2006
Only
Slurry + FA
Normali
8X
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
8. NU and Process Stability
• Exceptional WIWNU
50-150 Å nitride range
(<5% on 3mm EE),
depends mostly upon
incoming nitride ranges.
• Planarization Efficiency
3-10x greater than
g
conventional pad/slurry
processes; maximizes
efficient removal of surface
“peaks” and minimizes
loss on surface “valleys ”
valleys.
• Process Stability
Quick start-up from tool idle
Reference: J. Gagliardi, 2006 International
J Gagliardi
Long consumable life Conference on Planarization/CMP
5k-10k Wafers Technology (2006 ICPT), October 12-13, 2006
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
9. Electrical Field Oxide Thickness
Traditional Slurry vs Fixed Abrasive STI CMP
rical Field Oxide
1.2 Ref: “Using Fixed Abrasives in a Production
Process for 200 mm STI Polishing,” Huang, C.
Traditional K., Gagliardi, J. J., Gleason, E., 16th CMP
Slurry User s Mtg. Proc., Munich Apr. 7, 2006,
User’s Mtg Proc Munich, Apr 7 2006
1.1
1
zed Electr
0.9 Fixed Abrasive
Normaliz
0.8
1 2 3 4 5 6 7 1 2 3 4 5 6 7 8 9 10 11 12 13
WAFER
0.7
0 200 400 600 800 1000
Data P i t
D t Point
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
10. Additional Characteristics
• Selectivity
~ 200:1 (topography vs.
planarized film)
~ 1.2:1.0 (oxide to
nitride.)
• S fS
Self-Stopping
High insensitivity to
o e po s yields
overpolish y e ds a
wide process window.
• Product
Performance
Production-ProvenReference: Y. Moon, A. Kapur, R. Venigalla, L. Economikos, 2006
within-roll and roll-to-
International Conference on Planarization/CMP Technology (2006
roll consistency ICPT) October 12-13, 2006
consistency. ICPT), O t b 12 13
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
11. FA STI CMP Roadmap
300 mm
65nm,
65nm 45nm and Sub 45nm
2006 2007 2008 2009 2010 2011 2012
65 nm Manufacturing
45 nm Process Dev.
45 nm Manufacturing
32 nm D
Development
l t 32 nm P
Process D
Development
l t
SWR 521 & 542
Chemistry
SWR 548 & 550
Subpad Improvements
p p
Nanoceria Abrasives
Advanced FEOL Applications
200 mm
Sub 250 nm Manufacturing
R14 FA Rotary Pad
2006 2007 2008 2009 2010 2011 2012
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
12. Advancements for
45nm and sub 45nm
• Chemistry
– Surfactant introduced to polishing chemistry
• Abrasive
– Current work with nano ceria
nano-ceria
• Size, Shape, Loading
– Fixed Abrasive Topography
• Shape Density, Size
Shape, Density
• Process Improvements
– Reduced Pressure Polishing
g
– Higher throughput
– Lower Increments
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
13. Advancements for 45nm and sub 45nm
Chemistry
Abrasive
Surfactant Added Nano
Ceria
Standard Polish
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
14. Advancements for 45nm and sub 45nm
Abrasive
Ab i
Current work with nano-ceria - Size, Shape, Loading
p g p y
Fixed Abrasive Topography - Shape, Density, Size
p , y,
521 & 542 Ceria, 150 nm 548, 550 Ceria, 135 nm
Multiple samples show acceptable rate
p p p
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
15. Advancements for 45nm and sub 45nm
Process
• CMP process and performance improvement
Surfactant Chemistry allows much lower downforce
- Lower downforce
reduces defects 50-80% – Yield
allows FA to run at lower increments – Cost
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
16. Advancements for 45nm and sub 45nm
Low Pressure Reduces Defects
From a
KLA-Tencor SP2
KLA T
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
17. Advancements for 45nm and sub 45nm
Low Pressure Reduces Defects
Generally to levels equal to HSS slurry
FAB
A 12 months in production, HARP STI 45 nm
production STI,
B Tested at 65 nm HDP STI and found
65% reduction in defects on product wafers
Reduction of Increment
Higher Rate (throughput)
C Tested at 45 nm HARP STI and found
80% reduction in defects on product wafers
Reduction of Increment
Higher Rate (throughput)
D Tested at 65 nm HDP STI and found
“significant” reduction i d f t on product wafers
“ i ifi t” d ti in defects d t f
E Tested at 65 nm HDP STI and found
80% reduction in defects on product wafers
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
18. Advancements for 45nm and sub 45nm
Process
• CMP process and performance improvement
Lower pressures reduce subpad deflection
-S
Some f b experience a f t b d near wafer edge
fabs i fast-band f d
known to be the result of the subpad deflection
Reference: Fixed Abrasive Direct STI CMP Allows Elimination of
the Conventional Subpad Compromise for WIW and WID Ranges, J. J.
Gagliardi, Abs. 915, 204th Elec. Chem. Soc., Oct. 12-17, 2003
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
19. Advancements for 45nm and sub 45nm
Process
4000
Edge Profiles vs. Process
3500
ning Oxide (Å)
3000
2500
2000
1500
Remain
1000
3.5 psi - No Surfactant
500
1.5
1 5 psi + Surfactant
0
80 85 90 95 100
Wafer Edge - mm
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
20. Advancements for 45nm and sub 45nm
Process Summary
Benefit Impact
Higher Rates
Hi h R t Throughput
Th h t
Lower Defects Yield
Improved Fastband Yield
Lower Increment CoC
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
21. Summary and Conclusion
• Advances in Chemistry and Abrasive
have improved the performance of the FA
approach to STI CMP, enabling 45 nm.
• A path to achieve key performance needs
– lower defects – for sub-45 nm process
sub 45
has been identified.
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
22. Outline
Background
Timeline of developments leading to Advancements for Sub 45nm
p g
FA STI CMP
Two Step “hybrid” FA Process and Outstanding Planarization
Current FA STI CMP Roadmap
65nm, 45nm and Sub 45nm
Advancements for 45nm and sub 45nm
Chemistry
Abrasive
CMP Process and performance
Summary and C
S d Conclusion
l i
3
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
23. Future Venues for 3M CMP Updates
• August 2007, Clarkson University CAMP CMP
Conference
1. “ADVANCEMENTS IN PAD CONDITIONING FOR TUNGSTEN
CHEMICAL MECHANICAL PLANARIZATION”
2. “RECENT ADVANCEMENTS IN FIXED ABRASIVE STI CMP”
• September 2007, Semicon Taiwan, Taipei, Taiwan
1. “Mineral, Chemistry and Process Advancements to take Fixed Abrasive
STI CMP to sub 45 nm”
• October 2007, ICPT Conference, Dresden, Germany
1. “Defectivity Improvement for Fixed Abrasive Based STI CMP in Advanced
Logic Technology ”
2. “Laser Scattering Technique for Characterizing Defects and Surface
Morphology in the Fixed Abrasive CMP ”
3
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA
24. Advancements For Sub 45nm
Fixed Abrasive STI CMP
John Gagliardi, Andrey Zagrebelny,
Gagliardi Andre Zagrebeln
Bill Joseph, Larry Zazzera
3M Company
p y
3
3M NCCAVS CMP Users Group at Semicon West Moscone Center, San Francisco, CA