Datasheet of TPS62230

TPS62230, TPS62231, TPS62232, TPS62233, TPS62234
www.ti.com SLVS941C – APRIL 2009 – REVISED APRIL 2010

2 MHz / 3 MHz Ultra Small Step Down Converter in 1x1.5 SON Package
1FEATURES
• 2 MHz / 3 MHz Switch Frequency DESCRIPTION
• Up to 94% Efficiency The TPS6223X device family is a high frequency
• Output Peak Current up to 500mA synchronous step down DC-DC converter optimized
for battery powered portable applications. It supports
• Excellent AC and Transient Load Regulation up to 500mA output current and allows the use of tiny
• High PSRR (up to 90dB) and low cost chip inductors and capacitors.
• Small External Output Filter Components 1mH/ With a wide input voltage range of 2.05V to 6V the
4.7mF device supports applications powered by Li-Ion
• VIN range from 2.05V to 6V batteries with extended voltage range. The minimum
• Optimized Power Save Mode For Low Output input voltage of 2.05V allows as well the operation
from Li-primary or two alkaline batteries. Different
Ripple Voltage
fixed output voltage versions are available from 1.0V
• Forced PWM Mode Operation to 3.3V.
• Typ. 22 mA Quiescent Current The TPS6223X series features switch frequency up
• 100% Duty Cycle for Lowest Dropout to 3.8MHz. At medium to heavy loads, the converter
• Small 1 × 1.5 × 0.6mm3 SON Package operates in PWM mode and automatically enters
Power Save Mode operation at light load currents to
• 12 mm2 Minimum Solution Size
maintain high efficiency over the entire load current
• Supports 0.6 mm Maximum Solution Height range.
• Soft Start with typ. 100ms Start Up Time Because of its excellent PSRR and AC load
regulation performance, the device is also suitable to
APPLICATIONS replace linear regulators to obtain better power
• LDO Replacement conversion efficiency.
• Portable Audio, Portable Media The Power Save Mode in TPS6223X reduces the
• Cell Phones quiescent current consumption down to 22mA during
• Low Power Wireless light load operation. It is optimized to achieve very
• Low Power DSP Core Supply low output voltage ripple even with small external
component and features excellent ac load regulation.
• Digital Cameras
For very noise sensitive applications, the device can
VIN
TPS62231
L be forced to PWM Mode operation over the entire
2.05 V - 6 V 1/2.2 mH VOUT load range by pulling the MODE pin high. In the
VIN SW
1.8 V shutdown mode, the current consumption is reduced
CIN EN FB
COUT to less than 1mA. The TPS6223X is available in a 1 ×
2.2 mF MODE GND
4.7 mF 1.5mm2 6 pin SON package.

Total area
L1
12mm²
V IN
C1

C2
GND V OUT

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

UNLESS OTHERWISE NOTED this document contains Copyright © 2009–2010, Texas Instruments Incorporated
PRODUCTION DATA information current as of publication date.
Products conform to specifications per the terms of Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

SLVS941C – APRIL 2009 – REVISED APRIL 2010 www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

ORDERING INFORMATION
(1) FREQUENCY PACKAGE PACKAGE
TA PART NUMBER OUTPUT VOLTAGE (2) ORDERING
[MHz] DESIGNATOR MARKING
TPS62230 2.5 V 3 DRY TPS62230DRY GV
TPS62231 1.8 V 3 DRY TPS62231DRY GW
TPS62232 1.2 V 3 DRY TPS62232DRY GX
TPS62239 1.0 V 3 DRY TPS62239DRY OP
TPS622311 1.1V 2 DRY TPS622311DRY PA
TPS62235 1.2V 2 DRY TPS62235DRY OQ
TPS622313 1.3 V 3 DRY TPS62213DRY QG
TPS622314 1.5 V 3 DRY TPS622314DRY QF
–40°C to 85°C TPS62236 1.85V 2 DRY TPS62236DRY OR
TPS622312 2.0 V 3 DRY TPS622312DRY QE
TPS62234 2.1 V 3 DRY TPS62234DRY OH
TPS62238 2.25 V 3 DRY TPS62238DRY ON
TPS622310 2.3 V 3 DRY TPS622310DRY OT
(3)
TPS6223-2.7 2.7 V 3 DRY
TPS6223-2.9 (3) 2.9 V 3 DRY
TPS62233 3.0 V 3 DRY TPS62233DRY OG
TPS62237 3.3V 2 DRY TPS62237DRY OS

(1) The DRY package is available in tape on reel. Add R suffix to order quantities of 3000 parts per reel, T suffix for 250 parts per reel.
(2) Contact TI for other fixed output voltage options
(3) Device status is product preview, contact TI for more details

ABSOLUTE MAXIMUM RATINGS
(1)
over operating free-air temperature range (unless otherwise noted)
VALUE UNIT
Voltage at VIN and SW Pin (2) –0.3 to 7 V
VI Voltage at EN, MODE Pin (2) –0.3 to VIN +0.3, ≤7 V
(2)
Voltage at FB Pin –0.3 to 3.6 V
Peak output current internally limited A
HBM Human body model 2
kV
ESD rating (3) CDM Charge device model 1
Machine model 200 V
Power dissipation Internally limited
TJ Maximum operating junction temperature –40 to 125 °C
Tstg Storage temperature range –65 to 150 °C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin. The machine model is a 200-pF
capacitor discharged directly into each pin.

2 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated


DISSIPATION RATINGS (1)
POWER RATING DERATING FACTOR
PACKAGE RqJA
FOR TA ≤ 25°C ABOVE TA = 25°C
1 × 1.5 SON 234°C/W (2) 420 mW 4.2 mW/°C

(1) Maximum power dissipation is a function of TJ(max), qJA and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = [TJ(max) – TA] /qJA.
(2) This thermal data is measured with high-K board (4 layers board according to JESD51-7 JEDEC standard).

RECOMMENDED OPERATING CONDITIONS
operating ambient temperature TA = –40 to 85°C (unless otherwise noted) (1)
MIN NOM MAX UNIT
(2)
Supply voltage VIN 2.05 6 V
Effective inductance 2.2 mH
Effective capacitance 2.0 4.7 mF
VOUT ≤ VIN -1 V (3) 500 mA maximum IOUT (4)
3.0 3.6
Recommended minimum (5)
350mA maximum IOUT 2.5 2.7 V
supply voltage
VOUT ≤ 1.8V 60 mA maximum output current (5) 2.05
Operating virtual junction temperature range, TJ –40 125 °C

(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the
maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package
in the application (qJA), as given by the following equation: TA(max) = TJ(max) – (qJA × PD(max)).
(2) The minimum required supply voltage for startup is 2.05 V. The part is functional down to the falling UVL (Under Voltage Lockout)
threshold.
(3) For a voltage difference between minimum VIN and VOUT of ≥ 1 V
(4) Typical value applies for TA = 25°C, maximum value applies for TA = 70°C with TJ ≤ 125°C, PCB layout needs to support proper thermal
performance.
(5) Typical value applies for TA = 25°C, maximum value applies for TA = 85°C with TJ ≤ 125°C, PCB layout needs to support proper thermal
performance.

Copyright © 2009–2010, Texas Instruments Incorporated Submit Documentation Feedback 3


ELECTRICAL CHARACTERISTICS
VIN = 3.6V, VOUT = 1.8V, EN = VIN, MODE = GND, TA = –40°C to 85°C (1) typical values are at TA = 25°C (unless otherwise
noted), CIN = 2.2mF, L = 2.2mH, COUT = 4.7mF, see parameter measurement information
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
(2)
VIN Input voltage range 2.05 6 V
IOUT = 0mA. PFM mode enabled (Mode = 0)
22 40 mA
device not switching
IOUT = 0mA. PFM mode enabled (Mode = 0)
IQ Operating quiescent current 25 mA
device switching, VIN = 3.6V, VOUT = 1.2V
IOUT = 0 mA. Switching with no load
(MODE/DATA = VIN), PWM operation, 3 mA
VOUT = 1.8V, L = 2.2mH
ISD Shutdown current EN = GND (3) 0.1 1 mA
Falling 1.8 1.9 V
UVLO Undervoltage lockout threshold
Rising 1.9 2.05 V
ENABLE, MODE THRESHOLD
VIH TH Threshold for detecting high EN, MODE 2.05 V ≤ VIN ≤ 6V , rising edge 0.8 1 V
VIL TH HYS Threshold for detecting low EN, MODE 2.05 V ≤ VIN ≤ 6V , falling edge 0.4 0.6 V
IIN Input bias Current, EN, MODE EN, MODE = GND or VIN = 3.6V 0.01 0.5 mA
POWER SWITCH
High side MOSFET on-resistance 600 850
RDS(ON) VIN = 3.6V, TJmax = 85°C; RDS(ON) max value mΩ
Low Side MOSFET on-resistance 350 480
Forward current limit MOSFET
690 850 1050 mA
ILIMF high-side VIN = 3.6V, open loop
Forward current limit MOSFET low side 550 840 1220 mA
TSD Thermal shutdown Increasing junction temperature 150 °C
Thermal shutdown hysteresis Decreasing junction temperature 20 °C
CONTROLLER
tONmin Minimum ON time VIN 3.6V, VOUT = 1.8V, Mode = high, IOUT = 0 mA 135 ns
tOFFmin Minimum OFF time 40 ns
OUTPUT
VREF Internal Reference Voltage 0.70 V
VIN = 3.6V, Mode = GND, device operating in PFM
0%
Mode, IOUT = 0mA
(4)
Output voltage accuracy
VIN = 3.6V, MODE = VIN, TA = 25°C –2.0% 2.0%
VOUT IOUT = 0 mA TA = –40°C to 85°C –2.5% 2.5%
DC output voltage load regulation PWM operation, Mode = VIN = 3.6V, VOUT = 1.8 V 0.001 %/mA
DC output voltage line regulation IOUT = 0 mA, Mode = VIN, 2.05V ≤ VIN ≤ 6V 0 %/V
Time from active EN to VOUT = 1.8V, VIN = 3.6V,
tStart Start-up Time 100 ms
10Ω load
(5)
ILK_SW Leakage current into SW pin VIN = VOUT = VSW = 3.6 V, EN = GND 0.1 0.5 mA

(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the
maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the
part/package in the application (qJA), as given by the following equation: TA(max) = TJ(max) – (qJA × PD(max)).
(2) The minimum required supply voltage for startup is 2.05V. The part is functional down to the falling UVL (Under Voltage Lockout)
threshold
(3) Shutdown current into VIN pin, includes internal leakage
(4) VIN = VO + 1.0 V
(5) The internal resistor divider network is disconnected from FB pin.



DRY PACKAGE
(TOP VIEW)

MODE 1 6 FB

SW 2 5 EN

VIN 3 4 GND

PIN FUNCTIONS
PIN
I/O DESCRIPTION
NAME NO
VIN 3 PWR VIN power supply pin.
GND 4 PWR GND supply pin
EN 5 IN This is the enable pin of the device. Pulling this pin to low forces the device into shutdown mode. Pulling
this pin to high enables the device. This pin must be terminated.
SW 2 OUT This is the switch pin and is connected to the internal MOSFET switches. Connect the inductor to this
terminal
FB 6 IN Feedback Pin for the internal regulation loop. Connect this pin directly to the output capacitor.
MODE 1 IN MODE pin = high forces the device to operate in PWM mode. Mode = low enables the Power Save Mode
with automatic transition from PFM (Pulse frequency mode) to PWM (pulse width modulation) mode.

FUNCTIONAL BLOCK DIAGRAM
VIN

VREF Undervoltage Current
Bandgap Lockout
0.70 V Limit Comparator

Limit
High Side
MODE
MODE PMOS
Softstart

VIN Gate Driver
Min. On Time Control Anti SW
EN FB Logic Shoot-Through
Min. OFF Time

VREF
NMOS
FB Limit
Low Side
Integrated
Feed Back Error Thermal
Comparator Zero/Negative
Network Shutdown Current Limit Comparator

EN

GND



PARAMETER MEASUREMENT INFORMATION
TPS6223X L = 1/2.2 mH
VIN = 2.05 V to 6 V
VOUT
VIN SW
CIN EN FB COUT
2.2 mF MODE GND 4.7 mF

CIN: Murata GRM155R60J225ME15D 2.2 mF 0402 size
COUT: Murata GRM188R60J475ME 4.7 mF 0603 size, VOUT >= 1.8 V
COUT: Taiyo Yuden AMK105BJ475MV 4.7 mF 0402 size, VOUT = 1.2 V
l: Murata LQM2HPN1R0MJ0 1 mH, LQM2HPN2R2MJ0 2.2 mH,
3
size 2.5x2.0x1.2mm

TYPICAL CHARACTERISTICS

Table of Graphs
FIGURE
h Efficiency vs Load current 1, 2, 3, 4, 5, 6, 7
h Efficiency vs Output Current 8, 9, 10, 11
12, 13, 14, 15,
VO Output voltage vs Output current
16, 17
18, 19, 20, 21,
Switching frequency vs Output current 22, 23, 24, 25,
26, 27
IQ Quiescent current vs Ambient temperature 28
ISD Shutdown current vs Ambient temperature 29
PMOS Static drain-source on-state resistance vs Supply voltage and ambient temperature 30
rDS(ON)
NMOS Static drain-source on-state resistance vs Supply voltage and ambient temperature 31
PSRR Power supply rejection ratio vs Frequency 32
Typical operation 33, 34, 35
PFM 36
Line transient response
PWM 37
Mode transition PFM / forced PWM 38
AC - load regulation performance 39, 40, 41
Load transient response 42, 43, 44, 45
Start-up 46, 47
Spurious Output Noise, 12R Load 48
Spurious Output Noise, 100R Load 49



TYPICAL CHARACTERISTICS (continued)
100 100
VIN = 3.6 V
VIN = 2.9 V
90 90
VIN = 3.6 V
80 80
VIN = 4.2 V
VIN = 2.9 V
70 70 VIN = 4.2 V
VIN = 5 V
Efficiency -%

Efficiency -%
60 60
VIN = 5 V
50 50

40 40

30 30
MODE = GND,
VOUT = 2.5V, MODE = VIN,
20 20
L = 2.2 mH (LQM2HPN2R2MJ0) VOUT = 2.5 V,
10 COUT = 4.7 mF 10 L = 2.2 mH (LQM2HPN2R2MJ0)
COUT = 4.7 mF
0 0
0.1 1 10 100 1000 1 10 100 1000
IO - Output Current - mA IO - Output Current - mA

Figure 1. Efficiency PFM/PWM Mode 2.5V Output Voltage Figure 2. Efficiency Forced PWM Mode 2.5V Output Voltage

100 100
VIN = 2.3 V
90 90
VIN = 2.3 V
80 VIN = 2.7 V 80
VIN = 2.7 V
VIN = 3.3 V
70 70
VIN = 3.6 V VIN = 3.3 V
Efficiency -%
Efficiency -%

60 60
VIN = 4.2 V VIN = 3.6 V
50 50
VIN = 5 V VIN = 4.2 V
40 40
VIN = 5 V
30 30
MODE = GND,
MODE = VIN,
20 VOUT = 1.8 V, 20 VOUT = 1.8 V,
L = 2.2 mH (MIPSA25202R2),
10 COUT = 4.7 mF 10 L = 2.2 mH (MIPSA25202R2),
COUT = 4.7 mF
0 0
0.1 1 10 100 1000 1 10 100 1000

Figure 3. Efficiency PFM/PWM MODE 1.8V Output Voltage Figure 4. Efficiency Forced PWM Mode 1.8V Output voltage



100 100

90 VIN = 2.3 V 90

80 80 VIN = 2.3 V

70 VIN = 2.7 V 70
VIN = 2.7 V
VIN = 3.6 V

Efficiency -%
Efficiency -%

60 60 VIN = 3.6 V

50 VIN = 4.2 V VIN = 4.2 V
50

40 VIN = 5 V 40 VIN = 5 V

30 30
MODE = GND,
MODE = VIN,
20 VOUT = 1.2 V, 20 VOUT = 1.2 V,
L = 2.2 mH MIPSZ2012 2R2 (2012 size),
10 COUT = 4.7 mF 10 L = 2.2 mH MIPSZ2012 2R2 (2012 size),
COUT = 4.7 mF
0 0
0.1 1 10 100 1000 1 10 100 1000

Figure 5. Efficiency PFM/PWM Mode 1.2V Output voltage Figure 6. Efficiency Forced PWM Mode 1.2V Output Voltage

90 100
VIN = 3.6 V
90
85
80 VIN = 5 V VIN = 4.2 V
80 MIPSA25202R2
L = 2.2 mH
MIPSD1R0 70
(2.5x2x1.2mm3)
L = 1 mH 0805
75
Efficiency -%

Efficiency - %

(2x1.25x1mm3) LQM2HPN1R0MJ0 60
L = 1 mH
MIPSZ2012D2R2 (2.5x2x1.2mm3)
70 50
L = 2.2 mH 0805
(2x1.25x1mm3)
40
65
LQM21PN2R2
L = 2.2 mH 0805 MODE = GND, 30 TPS62233
60 (2x1.25x0.55mm3) CIN = 2.2 mF (0402), MODE = GND,
COUT = 4.7 mF (0402), 20 VOUT = 3 V,
55 VOUT = 1.8 V, L = 1 mH,
10 COUT = 4.7 mF
VIN = 3.6 V
50 0
0.1 1 10 100 1000 0.1 1 10 100 1000

Figure 7. Comparison Efficiency vs Inductor Value and Size Figure 8. Comparison Efficiency vs IOUT – TPS62233



90 100
VIN = 3.3 V VIN = 3.3 V
90
80
VIN = 3.6 V
80 VIN = 3.6 V
70 VIN = 4.2 V

Efficiency - %
Efficiency - %

VIN = 4.2 V
70
60
60

50
50

40 40
VOUT = 1.2 V PFM, TPS62236
VOUT = 1.85 V PFM
MODE = GND
30 30
0.1 1 10 100 1000 0.1 1 10 100 1000

Figure 9. Comparison Efficiency vs IOUT – TPS62235 Figure 10. Comparison Efficiency vs IOUT – TPS62236

90 2.575
VIN = 3.3 V MODE = VIN,
VOUT = 2.5 V,
80 2.55 L = 1 mH,
VIN = 3.6 V COUT = 4.7 mF,
VO - Output Voltage (DC) - V

TA = 25°C
VIN = 3.3 V
70 VIN = 4.2 V 2.525
Efficiency - %

VIN = 3.6 V

60 2.5
VIN = 4.2 V

50 2.475 VIN = 5 V

40 2.45
TPS622311
VOUT = 1.1 V PFM
30 2.425
0.1 1 10 100 1000 0.1 1 10 100 1000

Figure 11. Comparison Efficiency vs IOUT – TPS622311 Figure 12. 2.5V Output Voltage Accuracy forced PWM Mode



2.575 1.854
MODE = GND,
MODE = GND,
VOUT = 2.5 V,
VOUT = 1.8 V,
L = 1 mH,
2.55 1.836 L = 2.2 mH,
COUT = 4.7 mF,
COUT = 4.7 mF,

TA = 25°C
TA = 25°C
2.525 VIN = 4.2 V VIN = 5 V 1.818
VIN = 3.6 V VIN = 3.3 V

2.5 VIN = 3.3 V 1.8
VIN = 3.6 V
VIN = 4.2 V
2.475 1.782 VIN = 5 V

2.45 1.764

2.425 1.746
0.1 1 10 100 1000 0.01 0.1 1 10 100 1000
Figure 13. 2.5V Output Voltage Accuracy PFM/PWM Mode Figure 14. 1.8V Output Voltage Accuracy PFM/PWM Mode

1.854 1.236
MODE = VIN, MODE = VIN,
VOUT = 1.8 V, VOUT = 1.2 V,
1.836 L = 1 mH, 1.224 L = 2.2 mH,
COUT = 4.7 mF, COUT = 4.7 mF,


TA = 25°C TA = 25°C VIN = 3.3 V
VIN = 3.3 V
1.818 VIN = 3.6 V 1.212
VIN = 3.6 V

1.8 1.2
VIN = 5 V
VIN = 4.2 V
1.782 VIN = 4.2 V 1.188 VIN = 5 V

1.764 1.176

1.746 1.164
0.1 1 10 100 1000 0.1 1 10 100 1000
Figure 15. 1.8V Output Voltage Accuracy Forced PWM MODE Figure 16. 1.2V Output Voltage Accuracy Forced PWM MODE



1.236 4000
MODE = GND,
VOUT = 1.2 V,
3500 VIN = 5 V
1.224 L = 2.2 mH,
COUT = 4.7 mF,
VIN = 4.2 V

TA = 25°C 3000
VIN = 3.3 V VIN = 3.6 V
1.212

f - Frequency - kHz
VIN = 3.3 V
2500
VIN = 3.6 V

1.2 2000

VIN = 4.2 V
1500
1.188
VIN = 5 V
MODE = GND,
1000 VIN = 2.7 V VOUT = 1.8 V,
1.176 L = 2.2 mH,
500 VIN = 2.3 V COUT = 4.7 mF,
TA = 25°C
1.164 0
0.01 0.1 1 10 100 1000 0 100 200 300 400 500

Figure 17. 1.2V Output Voltage Accuracy PFM/PWM MODE Figure 18. Switching Frequency vs Output Current, 1.8V Output
Voltage MODE = GND

4000 4000
VIN = 5 V VIN = 5 V
3500 VIN = 4.2 V 3500 VIN = 4.2 V
VIN = 3.6 V VIN = 3.6 V
3000 3000 VIN = 3.3 V
VIN = 3.3 V
f - Frequency - kHz
f - Frequency - kHz

2500 2500

2000 2000

1500 1500
MODE = GND, MODE = VIN,
1000 VOUT = 1.8 V, 1000 VIN = 2.7 V
VIN = 2.7 V VOUT = 1.8 V,
L = 1 mH,
VIN = 2.3 V VIN = 2.3 V L = 2.2 mH,
500 COUT = 4.7 mF, 500 COUT = 4.7 mF,
TA = 25°C
TA = 25°C
0 0
0 100 200 300 400 500 0 100 200 300 400 500

Figure 19. Switching Frequency vs Output Current, 1.8V Output Figure 20. Switching Frequency vs Output Current, 1.8V Output
Voltage MODE = GND Voltage MODE = VIN



4000 4000
MODE = GND, VIN = 5 V MODE = VIN,
VOUT = 2.5 V, VIN = 4.2 V VOUT = 2.5 V,
3500 VIN = 5 V 3500
L = 2.2 mH, VIN = 3.6 V L = 2.2 mH,
VIN = 4.2 V COUT = 4.7 mF, COUT = 4.7 mF,
3000 3000 VIN = 3.3 V
TA = 25°C TA = 25°C

f - Frequency - kHz
f - Frequency - kHz

2500 2500
VIN = 3.6 V

2000 2000

VIN = 3.3 V
1500 1500

1000 1000

500 VIN = 3 V 500 VIN = 3 V

0 0
0 100 200 300 400 500 0 100 200 300 400 500


3500 3000
VIN = 5 V VIN = 5 V
3000 VIN = 4.2 V
2500 VIN = 4.2 V
VIN = 3.3 V
VIN = 3.6 V
2500 VIN = 3.6 V VIN = 3.3 V
f - Frequency - kHz
f - Frequency - kHz

2000
VIN = 2.7 V
2000
1500
1500
VIN = 2.3 V
1000 VIN = 2 V VIN = 2.7 V
1000 VIN = 2.3 V MODE = GND,
VOUT = 1.2 V, MODE = VIN,
VIN = 2 V
VOUT = 1.2 V,
L = 2.2 mH,
500 L = 2.2 mH,
500 COUT = 4.7 mF,
TA = 25°C COUT = 4.7 mF,
TA = 25°C
0 0
0 100 200 300 400 500 0 100 200 300 400 500




2500 3000
VIN = 5 V
VIN = 4.2 V VIN = 5 V
VIN = 3.6 V 2500
2000 VIN = 4.2 V

f - Frequency - KHz
f - Frequency - KHz

2000
1500
VIN = 2.3 V VIN = 2.7 V VIN = 3.3 V
1500
VIN = 3.3 V
1000
1000 VIN = 3.6 V
TPS62235
MODE = GND, TPS62236
VIN = 2.7 V MODE = GND,
500 VOUT = 1.2 V,
500 VIN = 2.3 V VOUT = 1.85 V,
L = 2.2 mH,
L = 2.2 mH,
COUT = 4.7 mF
COUT = 4.7 mF
0 0
0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45
IO - Output Current - A IO - Output Current - A

Figure 25. Switching Frequency vs Output Current, 1.2V Output Figure 26. Switching Frequency vs Output Current, 1.85V
Voltage MODE = PFM – TPS62235 Output Voltage MODE = PFM –TPS62236

3000 35

TA = 85°C
2500 TA = 60°C TA = 25°C
30
VIN = 5 V
IQ - Quiescent Current - mA

VIN = 4.2 V
f - Frequency - KHz

2000
25

1500
VIN = 2.7 V
VIN = 3.3 V
20
VIN = 2.3 V TA = -40°C
1000
TPS622311
MODE = GND,
VOUT = 1.1 V, 15
500
L = 2.2 mH,
COUT = 4.7 mF
0
0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 10
2 2.5 3 3.5 4 4.5 5 5.5 6
IO - Output Current - A VIN - Input Voltage - V
Figure 27. Switching Frequency vs Output Current, 1.1V Output Figure 28. Quiescent Current IQ vs Ambient Temperature TA
Voltage MODE = PFM – TPS622311



0.2

rDS(ON) - Static Drain-Source On-State Resistance - W
2
PMOS
0.18 TA = 85°C 1.8 TA = 85°C
0.16 1.6 TA = 60°C
ISD - Shutdown Current - mA

0.14 1.4 TA = 25°C
0.12 1.2 TA = -40°C

0.1 1

0.08 TA = -40°C 0.8
TA = 60°C TA = 25°C
0.06 0.6

0.04 0.4

0.02 0.2

0 0
2 2.5 3 3.5 4 4.5 5 5.5 6 2 2.5 3 3.5 4 4.5 5 5.5 6
VIN - Input Voltage - V VIN - Input Voltage - V

Figure 29. Shutdown Current ISD vs Ambient Temperature TA Figure 30. PMOS RDSON vs Supply Voltage VIN and Ambient
Temperature TA

100
rDS(ON) - Static Drain-Source On-State Resistance - W

0.7
NMOS IOUT = 50 mA,
90
PSRR - Power Supply Rejection Ratio - dB

TA = 85°C MODE = 0,
0.6 forced PWM
TA = 60°C 80

0.5 TA = 25°C 70

TA = -40°C 60 IOUT = 50 mA,
0.4 MODE = 1,
50 PFM/PWM IOUT = 150 mA,
0.3 40 PWM Mode

30 VIN = 3.6 V,
0.2 VOUT = 1.8 V,
20
CIN = 2.2 mF,
0.1 10 COUT = 4.7 mF,
L = 2.2 mH
0
0 10 100 1k 10k 100k 1M
2 2.5 3 3.5 4 4.5 5 5.5 6
f - Frequency - kHz
VIN - Input Voltage - V

Figure 31. NMOS RDSON vs Supply Voltage VIN and Ambient Figure 32. TPS62231 1.8V PSRR
Temperature TA



SW VIN = 3.6 V
2 V/div VOUT = 2.5V COUT = 4.7 mF
20 mV/div L = 2.2 mH

VIN = 3.6V MODE = GND
COUT = 4.7 mF SW IOUT = 10 mA
VOUT = 2.5V
2 V/div
20 mV/Div L = 1 mH

MODE = GND
IOUT = 10 mA

IL IL
200 mA/Div 200 mA/div

t - Time - 1 ms/div t - Time - 1 ms/div
Figure 33. PFM Mode Operation IOUT = 10mA Figure 34. PFM Mode Operation IOUT = 10mA

MODE = VIN VIN = 3.6 V
VOUT = 2.5 V IOUT = 10 mA COUT = 4.7 mF
L = 1 mH VIN = 3.6 V to 4.2 V
20 mV/div
200 mV/div

SW
2 V/div

IL
200 mA/div
VOUT = 1.8 V COUT = 4.7 mF
MODE = GND
IOUT = 50 mA

t - Time - 500 ns/div t - Time - 10 ms/div
Figure 35. Forced PWM Mode Operation IOUT = 10mA Figure 36. Line Transient Response PFM Mode




VIN = 3.6 V to 4.2 V MODE: 0 V to 3.6 V Forced PWM
2 V/div Mode Operation
200 mV/div
PFM Mode Operation

VSW
2 V/div

VIN = 3.6 V,
COUT = 4.7 mF
ICOIL L = 1 mH
200 mA/div IOUT = 10 mA

VOUT = 1.8 V COUT = 4.7 mF
MODE = VIN
VOUT = 1.8 V
IOUT = 50 mA
20 mV/div


Figure 37. Line Transient Response PWM Mode Figure 38. Mode Transition PFM / Forced PWM Mode

VIN = 3.6 V
VOUT = 2.5 V VOUT = 2.5 V
COUT = 4.7 mF 50 mV/div
50 mV/div
L = 2.2 mH
MODE = GND
VIN = 3.6 V
IOUT = 5 mA to 200 mA IOUT = 5mA to 200mA COUT = 4.7 mF
sinusoidal sinusoidal L = 2.2 mH
100 mA/div 100mA/Div MODE = VIN

IL IL
200 mA/div 200 mA/div

Figure 39. AC – Load Regulation Performance 2.5V VOUT PFM Figure 40. AC – Load Regulation Performance 2.5V VOUT PWM
Mode Mode


Datasheet of TPS62230

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Datasheet of TPS62230