SPICE MODEL of TPCA8128 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Standard)
PART NUMBER: TPCA8128
MANUFACTURER: TOSHIBA
Body Diode (Standard)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1

2. MOSFET MODEL
PSpice model
parameter
LEVEL
L
W
KP
RS
RD
VTO
RDS
TOX
CGSO
CGDO
CBD
MJ
PB
FC
RG
IS
N
RB
PHI
GAMMA
DELTA
ETA
THETA
KAPPA
VMAX
XJ
UO
Model description
Channel Length
Channel Width
Transconductance
Source Ohmic Resistance
Ohmic Drain Resistance
Zero-bias Threshold Voltage
Drain-Source Shunt Resistance
Gate Oxide Thickness
Zero-bias Gate-Source Capacitance
Zero-bias Gate-Drain Capacitance
Zero-bias Bulk-Drain Junction Capacitance
Bulk Junction Grading Coefficient
Bulk Junction Potential
Bulk Junction Forward-bias Capacitance Coefficient
Gate Ohmic Resistance
Bulk Junction Saturation Current
Bulk Junction Emission Coefficient
Bulk Series Resistance
Surface Inversion Potential
Body-effect Parameter
Width effect on Threshold Voltage
Static Feedback on Threshold Voltage
Mobility Modulation
Saturation Field Factor
Maximum Drift Velocity of Carriers
Metallurgical Junction Depth
Surface Mobility
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3. Transconductance Characteristics
Circuit Simulation Result
200
Measurement
Simulation
150
Gf s (S)
100
50
0
0
20
40
60
80
100
Drain Current ID (-A)
Comparison table
gfs(S)
-Id(A)
Measurement
Simulation
Error (%)
2
5
10
27.000
42.000
62.000
27.849
43.330
60.195
3.14
3.17
-2.91
20
50
85.000
127.000
83.059
125.256
-2.28
-1.37
100
169.000
168.304
-0.41
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4. Vgs-Id Characteristics
Circuit Simulation result
-100A
-80A
-60A
-40A
-20A
0A
0V
-1.0V
-2.0V
-3.0V
-4.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
TPCA8128
V1
V2
-10
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
4

5. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
Drain Current ID (-A)
80
60
40
20
0
0.0
1.0
2.0
3.0
Gate - Source Voltage VGS (-V)
4.0
Simulation Result
-VGS(V)
-ID(A)
Measurement
Error (%)
Simulation
2
1.850
1.912
3.36
5
10
20
40
60
80
1.950
2.050
2.200
2.400
2.550
2.700
1.996
2.093
2.232
2.435
2.595
2.734
2.37
2.08
1.46
1.46
1.78
1.25
100
2.850
2.858
0.28
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
5

6. Rds(on) Characteristics
Circuit Simulation result
-20.0A
-17.5A
-15.0A
-12.5A
-10.0A
-7.5A
-5.0A
-2.5A
0A
0V
-20mV
-40mV
-60mV
-75mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
TPCA8128
VDS
0Vdc
V1
-10
0
Simulation Result
ID= -17A, VGS= -10V
R DS (on)
mΩ
Measurement
3.700
Simulation
3.698
Error (%)
-0.07
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
6

7. Gate Charge Characteristics
Circuit Simulation result
-20V
-15V
-10V
-5V
0V
0
40n
80n
120n
160n
V(W1:4)
Time*1mA
Evaluation circuit
U1
TPCA8128
+
I1
I2
34
VDD
-
I1 = 0
I2 = 1m
TD = 0
TR = 5n
TF = 5n
PW = 600u
PER = 1000u
D2
Dbreak
ION = 0uA
IOFF = 1mA
W
W1
0
-24
0
Simulation Result
VDD= -24V ,ID=-34A
,VGS= -10V
Qgs
nC
Qgd
nC
Qg
nC
Measurement
11.000
30.000
115.000
Simulation
Error (%)
11.092
30.446
64.357
0.84
1.49
-44.04
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
7

8. Capacitance Characteristics
Measurement
Simulation
Simulation Result
Cbd(pF)
VSD(V)
0.1
0.2
0.5
1
2
5
10
20
30
Measurement
360.000
325.000
265.000
220.000
175.000
130.000
100.000
77.000
65.000
Simulation
Error (%)
359.600
325.200
266.300
219.100
175.500
127.870
99.690
77.430
66.710
-0.11
0.06
0.49
-0.41
0.29
-1.64
-0.31
0.56
2.63
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
8

9. Switching Time Characteristics
Circuit Simulation result
-12V
-10V
-8V
-6V
-4V
-2V
0V
0.90us
V(U1:4)
0.95us
V(U1:5)/1.5
1.00us
1.05us
1.10us
Time
Evaluation circuit
L2
RL
50nH
0.88
U1
TPCA8128
L1
30nH
R2
4.7
R1
4.7
V2
PER = 20u
PW = 10u
TF = 5n
TR = 5n
TD = 1u
V2 = 20
V1 = 0
VDD
-15Vdc
0
Simulation Result
ID= -17A, VDD= -15V
VGS=0/-10V
ton
ns
Measurement
21.000
Simulation
Error (%)
21.188
0.90
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
9

10. Output Characteristics
Circuit Simulation result
-100A
-10
-3
-2.8
-3.2
-3.6
-3.8
-80A
-60A
-4.5
-2.6
-2.5
-40A
-2.4
-2.3
-20A
-2.2
VGS= -2.1
0A
0V
-1.0V
-2.0V
-3.0V
-4.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
TPCA8128
V2
-4
V1
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
10

11. BODY DIODE SPICE MODEL
Forward Current Characteristics
Circuit Simulation Result
100A
10A
1.0A
100mA
0V
0.2V
I(Vsense)
0.4V
0.6V
0.8V
1.0V
1.2V
V_VDS
Evaluation Circuit
Vsense
0Vdc
VDS
U1
TPCA8128
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
11

12. Comparison Graph
Circuit Simulation Result
Drain reverse current IDR (A)
100.000
Measurement
Simulation
10.000
1.000
0.100
0
0.2
0.4
0.6
0.8
1
1.2
Drain - Source voltage VDS (V)
Simulation Result
IDR(A)
0.1
0.2
0.5
1
2
5
10
20
50
100
VDS (V)
Measurement
Simulation
0.600
0.599
0.620
0.621
0.650
0.651
0.675
0.674
0.700
0.699
0.735
0.737
0.775
0.773
0.820
0.822
0.920
0.918
1.030
1.031
Error (%)
-0.16
0.18
0.11
-0.14
-0.16
0.24
-0.20
0.29
-0.25
0.07
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
12

13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.2us 0.4us
I(R1)
0.6us
0.8us
1.0us
1.2us
1.4us
1.6us
1.8us
Time
Evaluation Circuit
R1
V1 = -9.4v
V2 = 10.6v
TD = 20ns
TR = 10ns
TF = 10ns
PW = 1us
PER = 100us
V1
50
U1
TPCA8128
0
Compare Measurement vs. Simulation
Measurement
trj
ns
20.000
Simulation
Error (%)
20.127
0.63
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
13

14. Reverse Recovery Characteristics
Reference
Measurement
Trj= 20 (ns)
Trb= 120 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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