This document provides a summary report of the modeling and simulation of a MOSFET transistor. It includes the component part number, manufacturer, and model details. It then summarizes the results of various circuit simulations testing the transistor's electrical characteristics and comparing them to manufacturer measurements. The simulations show good agreement with measurements, with most error percentages under 2%.

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Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TK10A50D
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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1
2
3
4
5
6
7
8
9
10
0.0 2.0 4.0 6.0 8.0 10.0
gfs(S)
Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A)
gfs (S)
Error (%)
Measurement Simulation
1 2.600 2.646 1.78
2 3.800 3.702 -2.58
5 5.800 5.730 -1.21
10 7.800 7.916 1.48

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V1
0Vdc
V2
10
0
V3
0Vdc
U1
TK10A50D
V_V1
0V 2V 4V 6V 8V 10V
I(V3)
0A
2A
4A
6A
8A
10A
12A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit

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0.00
4.00
8.00
12.00
0.0 2.0 4.0 6.0 8.0 10.0
DrainCurrentID(A)
Gate - Source Voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
Error (%)
Measurement Simulation
1 5.7500 5.7497 -0.01
2 6.0500 6.0645 0.24
5 6.7000 6.6992 -0.01
10 7.4000 7.4306 0.41
12 7.7000 7.6727 -0.35

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0
V3
0Vdc
VDS
0Vdc
V1
10
U1
TK10A50D
V_VDS
0V 0.8V 1.6V 2.4V 3.2V
I(V3)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 5A, VGS = 10V Measurement Simulation Error (%)
R DS (on)  0.6200 0.6200 0.00

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VDD
400
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
10
0
U1
TK10A50D
D2
Dbreak
Time*1mA
0 6n 12n 18n 24n 30n
V(W1:3)
0V
4V
8V
12V
16V
20V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=400V, ID=10A,
VGS=10V
Measurement Simulation Error (%)
Qgs nC 7.000 7.023 0.33
Qgd nC 7.000 7.014 0.20
Qg nC 20.000 20.004 0.02

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Capacitance Characteristic
Simulation Result
VDS (V)
Cbd (pF)
Error (%)
Measurement Simulation
12 157.000 156.800 -0.13
20 114.200 114.330 0.11
50 64.000 64.358 0.56
100 42.000 41.541 -1.09
Simulation
Measurement

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Time
0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us
V(U1:G) V(U1:D)/20.3
0V
2V
4V
6V
8V
10V
12V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=5A, VDD=200V
VGS=0/10V
Measurement Simulation Error(%)
ton ns 60.000 59.281 -1.20
0
VDD
203Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
U1
TK10A50D
L2
50nH
R2
50
R1
50
L1
30nH
RL
40

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V_V2
0V 2V 4V 6V 8V 10V
I(V3)
0A
2A
4A
6A
8A
10A
Output Characteristic
Circuit Simulation result
Evaluation circuit
V2
50V1
0
0
V3
0Vdc
U1
TK10A50D
VGS=6V
7V
6.5V
8V
10V 7.5V

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VSD
0
Vsense
0Vdc
U1
TK10A50D
V_VSD
0V 0.3V 0.6V 0.9V 1.2V 1.5V
I(Vsense)
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

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0.1
1.0
10.0
100.0
0 0.3 0.6 0.9 1.2 1.5
DrainreversecurrentIDR(A)
Source - Drain voltage VSD (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VSD(V)
%Error
Measurement Simulation
0.1 0.610 0.608 -0.32
0.2 0.640 0.642 0.24
0.5 0.690 0.689 -0.19
1 0.730 0.729 -0.13
2 0.775 0.778 0.36
5 0.865 0.867 0.26
10 0.965 0.967 0.21
20 1.115 1.114 -0.11
30 1.245 1.236 -0.73
40 1.340 1.347 0.55

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V1
TD = 0us
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.40v
TR = 10ns
V2 = 10.60v
R1
50
0
U1
DTK10A50D_P
Time
12us 14us 16us 18us 20us 22us 24us 26us 28us 30us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj us 0.4400 0.4407 0.15
trb us 1.2400 1.2404 0.03
trr us 1.6800 1.6811 0.06

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Reverse Recovery Characteristic Reference
Trj=0.44(us)
Trb=1.24(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement