SPICE MODEL of SSM3K36FS (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: SSM3K36FS
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. MOSFET MODEL
PSpice model
parameter
LEVEL
L
W
KP
RS
RD
VTO
RDS
TOX
CGSO
CGDO
CBD
MJ
PB
FC
RG
IS
N
RB
PHI
GAMMA
DELTA
ETA
THETA
KAPPA
VMAX
XJ
UO
Model description
Channel Length
Channel Width
Transconductance
Source Ohmic Resistance
Ohmic Drain Resistance
Zero-bias Threshold Voltage
Drain-Source Shunt Resistance
Gate Oxide Thickness
Zero-bias Gate-Source Capacitance
Zero-bias Gate-Drain Capacitance
Zero-bias Bulk-Drain Junction Capacitance
Bulk Junction Grading Coefficient
Bulk Junction Potential
Bulk Junction Forward-bias Capacitance Coefficient
Gate Ohmic Resistance
Bulk Junction Saturation Current
Bulk Junction Emission Coefficient
Bulk Series Resistance
Surface Inversion Potential
Body-effect Parameter
Width effect on Threshold Voltage
Static Feedback on Threshold Voltage
Mobility Modulation
Saturation Field Factor
Maximum Drift Velocity of Carriers
Metallurgical Junction Depth
Surface Mobility
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. Transconductance Characteristics
Circuit Simulation result
VDS=3V
Comparison table
gfs (S)
ID (mA)
Measurement
Simulation
%Error
50
0.367
0.371
1.09
100
0.520
0.525
0.96
200
0.750
0.743
-0.93
500
1.189
1.175
-1.18
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3

4. Vgs-Id Characteristics
Circuit Simulation result
1.0A
100mA
10mA
1.0mA
0V
1.0V
2.0V
3.0V
-I(VDS)
V_VGS
Evaluation circuit
U1
SSM3K36FS
VDS
3V
VGS
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4

5. Comparison Graph
Circuit Simulation result
VDS=3V
Comparison table
VGS (V)
ID (mA)
Measurement
Simulation
%Error
1
0.663
0.667
0.60
2
0.688
0.683
-0.73
5
0.735
0.714
-2.86
10
0.775
0.749
-3.35
20
0.830
0.799
-3.73
50
0.925
0.898
-2.92
100
1.012
1.010
-0.20
200
1.140
1.167
2.37
500
1.430
1.482
3.64
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5

6. Rds(on) Characteristics
Circuit Simulation result
200mA
150mA
100mA
50mA
0A
0V
20mV
-I(VDS)
40mV
60mV
80mV
100mV
V_VDS
Evaluation circuit
U1
SSM3K36FS
VDS
VGS
5V
0
Test condition: VGS=(5V), ID=(200mA)
Parameter
Unit
RDS(on)
Ω
Measurement
0.460
Simulation
0.459
%Error
-0.22
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6

7. Output Characteristics
Circuit Simulation result
1.0A
10V
0.9A
2.5V
0.8A
1.8V
4.5V
0.7A
0.6A
1.5V
0.5A
0.4A
0.3A
VGS=1.2V
0.2A
0.1A
0A
0V
0.2V
0.4V
0.6V
0.8V
1.0V
-I(VDS)
V_VDS
Evaluation circuit
U1
SSM3K36FS
VDS
VGS
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7

8. Capacitance Characteristics
Simulation result
Measurement
Simulation
Comparison table
Cbd (pF)
VDS (V)
Measurement
Simulation
%Error
0.1
12.000
12.030
0.25
0.5
8.500
8.472
-0.33
1
6.760
6.880
1.78
5
4.370
4.300
-1.60
10
3.300
3.250
-1.52
20
2.700
2.710
0.37
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8

9. Gate Charge Characteristics
Circuit Simulation result
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0s
0.5ns
V(W1:3)
1.0ns
1.5ns
2.0ns
2.5ns
3.0ns
D1
DMod
ID
0.5A
Time*1m
Evaluation circuit
U1
SSM3K36FS
W1
VDD
10V
+
I1 = 0
I2 = 1m
TF = 10n
TR = 10n
TD = 0
PER = 1
PW = 10m
IG
W
IOFF = 1mA
ION = 0
0
Test condition: VDD=(10V), VGS=(4V), ID=(0.5A)
Parameter
Unit
Measurement
Simulation
%Error
Qgs
nc
0.240
0.242
0.83
Qgd
nc
0.565
0.564
-0.18
Qg
nc
1.230
1.231
0.08
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9

10. Switching Time Characteristics
Circuit Simulation result
15V
10V
5V
0V
1.88us
V(G)*4
1.96us
V(D)
2.04us
2.12us
2.20us
Time
Evaluation circuit
L2
D
2
1
30nH
U1
SSM3K36FS
RL
50
L1
30nH
R1
V1 = 0
V2 = 5
TD = 2u
TR = 2.5n
TF = 2.5n
PW = 10u
PER = 1000u
2
V1
1
G
VDD
10
50
R2
50
0
Test condition: VDD=(10V), VGS=0/2.5(V), ID=(200mA)
Parameter
Unit
ton
ns
Measurement
30.000
Simulation
30.490
%Error
1.63
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
10

11. Body Diode Forward Current Characteristics
Circuit Simulation result
1.0A
100mA
10mA
1.0mA
100uA
0V
-0.2V -0.4V
I(VDS)
-0.6V -0.8V
-1.0V
-1.2V -1.4V
V_VDS
Evaluation circuit
U1
SSM3K36FS
VDS
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
11

12. Comparison Graph
Simulation result
1000
Measurement
Drian reverse current IDR (mA)
Simulation
100
10
1
0.1
0.0
0.5
1.0
1.5
Drain - source voltage -VDS (V)
Comparison table
-VDS (V)
IDR (mA)
Measurement
Simulation
%Error
0.1
0.538
0.534
-0.74
0.5
0.587
0.587
0.00
1
0.608
0.610
0.33
5
0.660
0.658
-0.30
10
0.685
0.679
-0.88
50
0.740
0.736
-0.54
100
0.772
0.765
-0.91
500
0.880
0.868
-1.36
1000
0.960
0.952
-0.83
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
12

13. Reverse Recovery Characteristics
Circuit Simulation result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
9.88us
9.96us
I(R1)
10.04us
10.12us
10.20us
Time
Evaluation circuit
R1
50
V1 = -9.2V
V2 = 10.7V
TD = 25ns
TR = 10ns
TF = 10ns
PW = 10us
PER = 1ms
U1
DSSM3K36FS_P
V1
0
Comparison Measurement vs. Simulation
Parameter
Unit
Measurement
Simulation
%Error
trj
ns
12.000
11.786
-1.78
trb
ns
26.000
25.946
-0.21
trr
ns
38.000
37.732
-0.71
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
13

14. Reverse Recovery Characteristics
Reference
Measurement
Trj = 12(ns)
Trb = 26(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
14

15. ESD PROTECTION DIODE
Zener Voltage Characteristics
Circuit Simulation result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V
5V
10V
-I(VGS)
15V
20V
25V
30V
35V
40V
45V 50V
V_VGS
Evaluation circuit
U1
SSM3K36FS
R1
1G
VGS
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
15

16. Zener Voltage Characteristics
Reference
Measurement
IZ = 1(mA)
VZ = 15.10(V) at IZ=1mA
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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