This document provides a device modeling report for a MOSFET transistor with part number SSM3J35CT manufactured by Toshiba. It includes SPICE model parameters for the MOSFET and its internal body diode. Measurement data and PSpice simulation results are given for key electrical characteristics of the MOSFET, including transconductance, drain current, gate charge, capacitance, switching time and reverse recovery. The report also provides a SPICE model for the zener voltage characteristic of the internal body diode.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: SSM3J35CT
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1

2. MOSFET MODEL
PSpice model
parameter
LEVEL
L
W
KP
RS
RD
VTO
RDS
TOX
CGSO
CGDO
CBD
MJ
PB
FC
RG
IS
N
RB
PHI
GAMMA
DELTA
ETA
THETA
KAPPA
VMAX
XJ
UO
Model description
Channel Length
Channel Width
Transconductance
Source Ohmic Resistance
Ohmic Drain Resistance
Zero-bias Threshold Voltage
Drain-Source Shunt Resistance
Gate Oxide Thickness
Zero-bias Gate-Source Capacitance
Zero-bias Gate-Drain Capacitance
Zero-bias Bulk-Drain Junction Capacitance
Bulk Junction Grading Coefficient
Bulk Junction Potential
Bulk Junction Forward-bias Capacitance Coefficient
Gate Ohmic Resistance
Bulk Junction Saturation Current
Bulk Junction Emission Coefficient
Bulk Series Resistance
Surface Inversion Potential
Body-effect Parameter
Width effect on Threshold Voltage
Static Feedback on Threshold Voltage
Mobility Modulation
Saturation Field Factor
Maximum Drift Velocity of Carriers
Metallurgical Junction Depth
Surface Mobility
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2

3. Transconductance Characteristics
Circuit Simulation Result
300
Measurement
Simulation
gfs (mS)
200
100
0
0
100
200
Drain current ID (-mA)
Comparison table
Id(-mA)
gfs (mS)
Measurement
Simulation
%Error
5
10
40.000
57.000
40.807
57.701
2.02
1.23
20
82.000
81.582
-0.51
50
131.000
128.933
-1.58
100
200
186.000
265.000
182.239
257.534
-2.02
-2.82
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3

4. Vgs-Id Characteristics
Circuit Simulation result
-1.0A
-1.0mA
0V -0.2V
I(V3)
-0.6V
-1.0V
-1.4V
-1.8V
-2.2V
-2.6V -3.0V
V_V1
Evaluation circuit
V3
0Vdc
V2
U1
SSM3J35CT
-3
V1
0Vdc
0
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4

5. Comparison Graph
Circuit Simulation Result
1000
Measurement
Drain current ID (-mA)
Simulation
100
10
1
0
1
2
3
Gate-source voltage V GS (-V)
Simulation Result
ID(-mA)
1
2
5
10
20
50
100
200
VGS(-V)
Measurement
0.670
0.730
0.820
0.920
1.040
1.290
1.600
2.050
Simulation
0.675
0.720
0.811
0.912
1.056
1.341
1.662
2.117
%Error
0.74
-1.31
-1.16
-0.87
1.50
3.92
3.87
3.25
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
5

6. Rds(on) Characteristics
Circuit Simulation result
-50mA
-25mA
0A
0V
-20mV
I(V3)
-60mV
-100mV
-140mV
-180mV
-220mV
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
SSM3J35CT
0Vdc
V1
-4
0
Simulation Result
ID = -50mA, VGS = -4V
R DS (on)

Measurement
4.300
Simulation
4.300
%Error
0.00
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6

7. Gate Charge Characteristics
Circuit Simulation result
-8.0V
-7.0V
-6.0V
-5.0V
-4.0V
-3.0V
-2.0V
-1.0V
0V
0
0.2n
0.4n
0.6n
0.8n
1.0n
V(W1:4)
Time*1mA
Evaluation circuit
ION = 0uA
IOFF = 1mA
W
I2
100m
VDD
+
I1
-
I1 = 0
I2 = 1m
TD = 0
TR = 0.5n
TF = 1n
PW = 600u
PER = 1000u
U1
D2
SSM3J35CTDbreak
W1
-16
0
Simulation Result
VDD=-16V, ID=-0.1A,
VGS=-4V
Qgs
nC
Qgd
nC
Qg
nC
Measurement
0.070
0.100
0.480
Simulation
%Error
0.070
0.101
0.358
-0.13
0.88
-25.36
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7

8. Gate Charge Characteristics
Reference
Gate-Source Volatge Vgs (-V)
8
6
4
2
0
0
0.2
0.4
0.6
0.8
1
Gate Charge Qg(nc)
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8

9. Capacitance Characteristics
Measurement
Simulation
Simulation Result
VDS (-V)
0.1
0.2
0.5
1
2
5
10
20
Cbd (pF)
Measurement
Simulation
26.000
25.900
21.000
21.100
14.200
14.220
9.800
9.750
6.300
6.388
3.400
3.514
2.200
2.200
1.400
1.370
%Error
-0.38
0.48
0.14
-0.51
1.40
3.35
0.00
-2.14
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
9

10. Switching Time Characteristics
Circuit Simulation result
-4.0V
-3.5V
-3.0V
-2.5V
-2.0V
-1.5V
-1.0V
-0.5V
0V
0.6us 0.8us 1.0us 1.2us 1.4us
V(U1:G)
V(U1:D)
1.6us
1.8us 2.0us
2.2us 2.4us
Time
Evaluation circuit
L2
30nH
R1 50
PER = 1m
PW = 10u
TF = 4n
TR = 4n
TD = 1u
V2 = 5
V1 = 0
RL
54
L1
U1
SSM3J35CT
VDD
-3Vdc
30nH
R2
50
V2
0
Simulation Result
ID=-50mA, VDD=-3V
VGS=-2.5/0V
ton
ns
Measurement
175.000
Simulation
%Error
174.162
-0.48
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10

11. Output Characteristics
Circuit Simulation result
-250mA
-10
-4
-2.5
-200mA
-150mA
-1.8
-100mA
-1.5
-50mA
VGS = -1.2V
0A
0V
-0.5V
-1.0V
-1.5V
-2.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
V2
U1
SSM3J35CT
V1
0
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11

12. Forward Current Characteristics
Circuit Simulation Result
1.0A
100mA
10mA
1.0mA
100uA
10uA
0V
0.2V
I(Vsense)
0.4V
0.6V
0.8V
1.0V
1.2V
1.4V
V_VDS
Evaluation Circuit
Vsense
0Vdc
VDS
U1
SSM3J35CT
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
12

13. Comparison Graph
Circuit Simulation Result
1000
Drian reverse current IDR (mA)
Measurement
Simulation
100
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Drain - source voltage VDS (V)
Simulation Result
IDR(mA)
0.01
0.1
1
10
20
50
100
200
VDS(V)
Measurement
Simulation
0.480
0.482
0.565
0.561
0.640
0.628
0.720
0.715
0.745
0.742
0.785
0.779
0.810
0.809
0.845
0.844
%Error
0.37
-0.65
-1.90
-0.74
-0.43
-0.80
-0.13
-0.17
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
13

14. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
9.7us 9.8us 9.9us
I(R1)
10.1us
10.3us
10.5us
10.7us
Time
Evaluation Circuit
R1
50
V1 = -9.2V
V2 = 10.9v
TD = 70ns
TR = 15ns
TF = 15ns
PW = 10us
PER = 100us
V1
U1
SSM3J35CT
0
Compare Measurement vs. Simulation
Measurement
trj
ns
26.000
Simulation
%Error
25.913
-0.33
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
14

15. Reverse Recovery Characteristics
Reference
Measurement
Trj = 26.00 (ns)
Trb = 66.00(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Example
Relation between trj and trb
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15

16. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristics
Circuit Simulation Result
-10mA
-9mA
-8mA
-7mA
-6mA
-5mA
-4mA
-3mA
-2mA
-1mA
0A
0V
-5V
I(R1)
-10V
-15V
-20V
-25V
-30V
-35V
-40V
-45V
V_V1
Evaluation Circuit
R1
R2
U1
SSM3J35CT
100MEG
V1
0.001m
0Vdc
0
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16

17. Zener Voltage Characteristics
Reference
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17