The document is a device modeling report that provides details on modeling and simulating the electrical characteristics of a SiC Schottky Barrier Diode. It includes the circuit configurations and SPICE model parameters used to model the diode. It then shows the results of simulations of the diode's forward and reverse current characteristics and junction capacitance and compares the simulations to manufacturer measurement data, finding good agreement.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: SCS120KE2
MANUFACTURER: ROHM
REAMARK: POFESSIONAL MODEL

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
R2
100MEG
NC
U1
SCS120KE2_P
R1
0.01m
V1
0Vdc
0
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.001 0.820 0.817 -0.37
0.01 0.880 0.877 -0.34
0.1 0.940 0.940 0.00
1 1.040 1.040 0.00
2 1.100 1.108 0.73
5 1.250 1.262 0.96
10 1.500 1.505 0.33

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
5
0
V1
TD = 0
TF = 500ns
PW = 100us
PER = 500us
V1 = 0
TR = 100us
V2 = 1200
V2
0Vdc
R1
100MEG
NC
U1
SCS120KE2_P
V(N16650)
10mV 100mV 1.0V 10V 100V 1.0KV
I(V2)/(1200/100u)
10pA
100pA
1.0nA
10nA
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
CT (pF)
%Error
Measurement Simulation
0.01 900.0 892.0 -0.89
0.1 855.0 860.6 0.65
1 650.0 657.6 1.17
10 280.0 287.3 2.61
100 97.0 97.3 0.31
200 70.0 70.0 0.00

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
7
U1
SCS120KE2_P
V1
0Vdc
R1
100m
00
R2
100MEG
NC
V_V1
0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
100uA
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph
Circuit Simulation result
Comparison table
IR (uA)
VR (V)
%Error
Measurement Simulation
0.01 700.0 712.3 1.76
0.1 878.0 878.2 0.02
1 1038.0 1037.0 -0.10
10 1200.0 1202.0 0.17