SPICE MODEL of SCS110AG , TC=75degree , LTspice (Professional Model) in SPICE PARK
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SPICE MODEL of SCS110AG , TC=75degree , LTspice (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of SCS110AG , TC=75degree , LTspice (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: SCS110AG_75C MANUFACTURER: ROHM REMARK: Professional Model REPORT:(LTspice IV) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 2. Spice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 4. Comparison Graph Circuit Simulation Result Measurement Simulation 10.000 FORWARD CURRENT: IF(A) 1.000 0.100 0.010 0.001 0.0 0.5 1.0 1.5 2.0 2.5 FORWARD VOLTAGE: VF(V) Simulation Result VF(V) IF(A) Error (%) Measurement Simulation 0.001 0.8050 0.8119 0.86 0.01 0.8730 0.8723 -0.08 0.1 0.9450 0.9408 -0.45 0.2 0.9750 0.9683 -0.69 0.5 1.0200 1.0174 -0.25 1 1.0700 1.0692 -0.07 2 1.1350 1.1414 0.56 5 1.3000 1.2999 -0.01 10 1.5200 1.5213 0.09 15 1.7300 1.7278 -0.13 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 6. Comparison Graph Circuit Simulation Result 1000 Measurement CAPACITANCE BETWEEN TERMINAL: Ct(pF) Simulation 100 10 1 0.1 1 10 100 REVERSE VOLTAGE:VR(V) Simulation Result C (pF) VR(V) Error (%) Measurement Simulation 0.1 542.337 544.030 0.31 0.2 522.371 529.732 1.41 0.5 465.350 471.766 1.38 1 404.500 408.068 0.88 2 333.714 334.092 0.11 5 236.672 238.254 0.67 10 177.213 177.749 0.30 20 130.504 130.397 -0.08 50 85.120 85.112 -0.01 100 62.215 61.343 -1.40 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 7. Reverse Recovery Characteristic Circuit Simulation Result Time (s) Evaluation Circuit Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 7.500 7.532 0.42 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 8. Reverse Recovery Characteristic Reference Measurement Trj =7.5(ns) Trb=16.0(ns) Conditions: Ifwd=0.2A, Irev=0.2A, Rl=50Ω Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 9. Reverse Characteristic Circuit Simulation Result Evaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 10. Comparison Graph Circuit Simulation Result 100000 Measurement Simulation 10000 REVERSE CURRENT:IR(nA ) 1000 100 10 1 0 100 200 300 400 500 600 REVERSE VOLTAGE：VR(V) Simulation Result IR(nA) VR(V) Error (%) Measurement Simulation 20 2.2000 2.1980 -0.09 100 2.3500 2.3920 1.79 200 2.7800 2.8865 3.83 300 5.2400 5.4553 4.11 400 23.7000 24.7090 4.26 500 170.0000 178.1630 4.80 600 1470.0000 1411.1000 -4.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010