SPICE MODEL of MP4212 (Standard+BDS N&P) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of MP4212 (Standard+BDS N&P Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: MP4212
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) / ESD Protection Diode
REMARK: N&P Channel Model
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
3. P-Channel Model
Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
-0.500 1.800 1.810 0.556
-1.000 2.500 2.505 0.200
-2.000 3.500 3.500 0.000
-5.000 5.500 5.505 0.091
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
4. Vgs-Id Characteristic
Circuit Simulation result
-10A
-8A
-6A
-4A
-2A
0A
0V -2V -4V -6V -8V -10V
I(V3)
V_V2
Evaluation circuit
U17
MP4212
Open
Open
V3
R1
V2 0Vdc
0Vdc
100MEG V1
-10Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-1.000 -2.500 -2.511 0.440
-2.000 -2.850 -2.844 -0.211
-4.000 -3.300 -3.324 0.727
-6.000 -3.700 -3.695 -0.135
-8.000 -4.000 -4.004 0.100
-10.000 -4.300 -4.291 -0.209
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
6. Rds(on) Characteristic
Circuit Simulation result
-3.0A
-2.5A
-2.0A
-1.5A
-1.0A
-0.5A
0A
0V -50mV -150mV -250mV -350mV -450mV
I(V3)
V_VDS
Evaluation circuit
U17
MP4212
Open
Open
VGS V3
-10Vdc
R1
0Vdc
0Vdc VDS
100MEG
0
0
Simulation Result
ID=-2.5A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 400.000 m 400.000 m 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
14. Reverse Recovery Characteristic Reference
Trj=50(ns)
Trb=76(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
-10mA
-9mA
-8mA
-7mA
-6mA
-5mA
-4mA
-3mA
-2mA
-1mA
0A
0V -5V -10V -15V -20V -25V -30V -35V -40V -45V
I(R1)
V_V1
Evaluation Circuit
U17
MP4212
Open
open
R1
0.01m
Ropen
V1
100MEG
0Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
28. Reverse Recovery Characteristic Reference
Trj=22.4(ns)
Trb=40.0(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
29. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
U19
MP4212
Open
open
R1
0.01m
Ropen
V1
0Vdc 100MEG
0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006