This document summarizes the specifications and simulation results for a D3SB80 diode model. It includes: 1. SPICE model parameters for the D3SB80 diode from Shindengen. 2. Simulation results showing forward current, junction capacitance, and reverse recovery characteristics that closely match measurement data. 3. Tables comparing simulation and measurement results for forward voltage, capacitance, and reverse recovery time. The document provides a detailed SPICE model for the D3SB80 diode that was verified through circuit simulation and comparison to experimental measurement data.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: DIODE/ GENERAL PURPOSE
RECTIFIER/ STANDARD MODEL
PART NUMBER: D3SB80
MANUFACTURER: Shindengen

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
D1
DD3SB80
SPICE MODEL
Circuit Configuration
*$
* PART NUMBER: D3SB80
* MANUFACTURER: SHINDENGEN
* VRRM=800V, IF=4A
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
.MODEL D3SB80 D
+ IS=19.021E-12
+ N=1.2905
+ RS=14.401E-3
+ IKF=38.420
+ CJO=95.481E-12
+ M=.28658
+ VJ=.40995
+ ISR=0
+ BV=840
+ IBV=10.000E-6
+ TT=11.00E-6
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4
V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V
I(R1)
100mA
1.0A
10A
V1
0V
R1
0.01m
0
D1
D3SB80
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
ForwordCurrent,IF(A)
Forward Voltage, VF (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.1 0.750 0.748 -0.27
0.2 0.770 0.773 0.39
0.5 0.810 0.808 -0.25
1 0.840 0.839 -0.12
2 0.875 0.877 0.23
4 0.930 0.923 -0.75

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V1
TD = 0
TF = 100ns
PW = 100us
PER = 10ms
V1 = 0
TR = 1us
V2 = 800
V2
0V
R
0
D1
D3SB80
V(R)
100mV 1.0V 10V 100V
I(V2)/(800V/1u)
10p
20p
30p
40p
50p
60p
70p
80p
90p
100p
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7
10
20
30
40
50
60
70
80
90
100
0.1 1 10 100
Capacitance,C(pF)
Reverse Voltage, VR (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
C (pF)
%Error
Measurement Simulation
0.1 89.748 89.900 0.17
0.2 85.335 85.317 -0.02
0.5 75.662 75.900 0.31
1 66.916 67.088 0.26
2 57.441 57.600 0.28
5 45.863 45.600 -0.57
10 38.075 37.800 -0.72
20 31.252 31.135 -0.37
50 23.868 24.063 0.82
100 19.424 19.800 1.94

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Time
12us 16us 20us 24us 28us 32us 36us 40us 44us 48us 52us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
R1
50
V1TD = 0us
TF = 10ns
PW = 20us
PER = 60us
V1 = -9.23V
TR = 10ns
V2 = 10.7V
0
D1
D3SB80
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj us 6.56 6.51 -0.76

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Reverse Recovery Characteristics Reference
Trj = 6.56 (us)
Trb = 4.96 (us)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example