This document summarizes the modeling and simulation of an 8P4M thyristor manufactured by NEC. It describes the PSpice model used including key parameters. It then shows circuit diagrams, simulation results and comparisons to measurements for various thyristor characteristics including IG-VT, ITM-VTM, holding characteristics and switching times. Percent errors between simulation and measurement are provided.

1. Device Modeling Report
COMPONENTS:THYRISTOR
PART NUMBER:8P4M
MANUFACTURER: NEC
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. IG-VT Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table (** See Reference)
Measurement Simulation % Error
IGT (mA) 5 5.0357 -0.7140
VGT (V) 0.8 0.793682 0.7898
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Reference
IGT = 5 mA , VGT = 0.8 V
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5. ITM-VTM Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
At ITM=25A Measurement Simulation % Error
VTM(V) 1.4(max) 1.3732 1.9143
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Holding Characteristic (IH)
Evaluation Circuit
Simulation result
Simulation
Comparison Table
VD=24V Measurement Simulation % Error
IH(mA) 6 5.9826 0.2900
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Switching Time Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation %Error
Toff(us) 100 101.979 -1.9790
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005