SPICE MODEL of 2SK2412 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameters)
PART NUMBER: 2SK2412
MANUFACTURER: NEC
REMARK: N Channel Model
Body Diode (Model parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic s
Circuit Simulation Result
17
Measurement
15 Simullation
TRANSCONDUCTANCE Gfs(s)
13
11
9
7
5
3
1
0 2 4 6 8 10
DRIAN CURRENT ID (A)
Comparison table
gfs(s)
Id(A) Error(%)
Measurement Simulation
0.2 2.174 2.240 3.040
0.5 3.650 3.700 1.380
1 5.155 5.200 0.880
2 7.180 7.092 -1.223
5 11.300 11.111 -1.672
10 16.300 15.823 -2.928
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristics
Circuit Simulation Result
20A
10A
1.0A
100mA
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V
I(V2)
V_VGS
Evaluation circuit
V2
U7
2SK2412
VDS
10Vdc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
ID - Drain Current - A
10
1
0.1
0 2 4
VGS - Gate to Source Voltage - V
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.1 2.000 1.932 -3.390
0.2 2.050 1.985 -3.171
0.5 2.120 2.091 -1.382
1 2.200 2.210 0.436
2 2.350 2.378 1.196
5 2.650 2.713 2.389
10 3.000 3.093 3.093
20 3.600 3.632 0.900
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. *Rds(on) Characteristic
Circuit Simulation result
10A
9A
8A
7A
6A
5A
4A
3A
2A
1A
0A
0V 100mV 200mV 300mV 400mV 500mV
I(V2)
V_VDS
Evaluation circuit
V2
U7
2SK2412
VDS
10Vdc
VGS
10Vdc
0
Simulation Result
ID=10, VGS=10V Measurement Simulation Error (%)
R DS (on) 50 m 50 m 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
0 5n 10n 15n 20n 25n 30n 35n 40n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
U3
2SK2412
I1
D1
W1 Dbreak 20Adc
+
TD = 0
-
I2 ION = 0A W
IOFF = 1mA VDD
48Vdc
0
Simulation Result
VDD=48V,ID=20A
Measurement Simulation Error (%)
,VGS=10V
Qgs nC 2.70 2.74 1.41
Qgd nC 8.90 8.89 -0.11
Qg nC 27.00 15.57 -42.34
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
1 590.000 588.500 -0.2542
2 490.000 489.200 -0.1633
5 380.000 381.224 0.3221
10 300.000 299.250 -0.2500
20 240.000 230.995 -3.7521
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Switching Time Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
-4V
-8V
0.93us 0.96us 0.99us 1.02us 1.05us 1.08us 1.11us
V(L3:2) V(Vsense:+)/3.1
Time
Evaluation circuit
Vsense RL
3.0
U1
R1 L3 M2SK2412
10 10nH
V1 = 0 VDD
V2 = 20 V1 30Vdc
TD = 1u R2
TR = 20n
TF = 20n 10
PW = 10u
PER = 20u
0
Simulation Result
ID=10A, VDD=30V
Measurement Simulation Error(%)
VGS=0/10V
Td(on) ns 15.000 15.044 0.293
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic
Circuit Simulation result
80A
10.0V
70A
6.0V
60A
50A
40A
VGS=4.0V
30A
20A
10A
0A
0V 2V 4V 6V 8V 10V 12V
I(V2)
V_VDS
Evaluation circuit
V2
U7
2SK2412
VDS
10Vdc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 1.0V 2.0V 3.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1 2SK2412
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
Diode Forward Current - A
10
1
0.1
0 1 2
Source to Drain Voltage - V
Simulation Result
VDS(V)
IDR(A) Measurement Simulation %Error
0.1 0.620 0.620 -0.032
0.2 0.640 0.642 0.359
0.5 0.680 0.676 -0.574
1 0.710 0.708 -0.268
2 0.750 0.751 0.173
5 0.840 0.846 0.679
10 0.980 0.975 -0.561
20 1.200 1.202 0.125
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
1.2us 1.4us 1.6us 1.8us 2.0us 2.2us
I(R1)
Time
Evaluation Circuit
R1 50
U1
V1 = -9.4V V1 M2SK2412
V2 = 10.7V
TD = 540n
TR = 10ns
TF = 5.7ns
PW = 1us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr ns 129.80 129.90 0.08
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic Reference
Measurement
Trj=60.10(ns)
Trb=69.70(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
open
open
V1
0Vdc Ropen
U1 M2SK2412
100MEG
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. Zener Voltage Characteristic Reference
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007