This document provides a device modeling report for a power MOSFET and its body diode. It includes: 1) Specifications and parameters for the MOSFET and diode SPICE models. 2) Simulation results comparing measurements and simulations for key characteristics like transconductance, capacitance, switching time. 3) Evaluation circuits used to simulate the characteristics. 4) References and specifications for the models to describe behavior in circuits.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: 2SJ650
MANUFACTURER: SANYO
Body Diode (Professional Model) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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3. Transconductance Characteristic
Circuit Simulation Result
15
Measurement
Simulation
10
gfs(S)
5
0
0.0 2.0 4.0 6.0 8.0 10.0
Drain Current ID (-A)
Comparison table
gfs(S)
-Id(A) Error (%)
Measurement Simulation
1.0000 3.550 3.707 4.42
2.0000 4.950 5.162 4.28
5.0000 7.800 7.926 1.62
10.0000 10.600 10.862 2.47
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4. Vgs-Id Characteristic
Circuit Simulation result
-20A
-15A
-10A
-5A
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
2SJ650 V2
-10
V1
0Vdc
0
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
-VGS(V)
-ID(A) Error (%)
Measurement Simulation
1 2.650 2.638 -0.47
2 2.850 2.863 0.45
5 3.250 3.320 2.15
10 3.750 3.851 2.69
20 4.700 4.632 -1.46
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6. Rds(on) Characteristic
Circuit Simulation result
-6.0A
-5.0A
-4.0A
-3.0A
-2.0A
-1.0A
0A
0V -100mV -200mV -300mV -400mV -500mV -600mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
2SJ650
0Vdc
V1
-10
0
Simulation Result
ID=-6A, VGS=-10V Measurement Simulation Error (%)
R DS (on) mΩ 100.000 100.000 0.00
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7. Gate Charge Characteristic
Circuit Simulation result
-10V
-9V
-8V
-7V
-6V
-5V
-4V
-3V
-2V
-1V
0V
0 5n 10n 15n 20n 25n
V(W1:4)
Time*1mA
Evaluation circuit
U1
2SJ650
ION = 0uA I2
I1 = 0 IOFF = 1mA D2 12
I2 = 1m W Dbreak
TD = 0 I1 -
TR = 5n +
TF = 5n VDD
PW = 600u W1
PER = 1000u
-30
0
Simulation Result
VDD=-30V,ID=-12A
Measurement Simulation Error (%)
,VGS=-10V
Qgs nC 3.800 3.781 -0.51
Qgd nC 4.500 4.524 0.52
Qg nC 21.000 20.996 -0.02
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8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VSD(V) Error(%)
Measurement Simulation
0 190.000 190.000 0.000
5 75.000 75.940 1.253
10 54.000 53.680 -0.593
15 43.000 43.153 0.356
20 37.000 36.783 -0.586
25 32.000 32.429 1.341
30 29.000 29.224 0.772
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9. Switching Time Characteristic
Circuit Simulation result
-14V
-12V
-10V
-8V
-6V
-4V
-2V
0V
0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us
V(U1:G) V(U1:D)/3
Time
Evaluation circuit
L2 RL
50nH 5
U1
R1 L1 2SJ650
PER = 20u VDD
PW = 10u 30nH -31Vdc
TF = 5n 50 R2
TR = 5n 50
TD = 1u
V2 = 20 V2
V1 = 0
0
Simulation Result
ID=-6A, VDD=-30V
Measurement Simulation Error(%)
VGS=0/-10V
td(on) ns 10.000 9.999 -0.01
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10. Output Characteristic
Circuit Simulation result
-25A
-10, -8 -6
-20A
-15A
-4
-10A
-5A
VGS=-3V
0A
0V -0.5V -1.0V -1.5V -2.0V -2.5V -3.0V -3.5V -4.0V -4.5V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
2SJ650 V2
-5
V1
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.3V 0.6V 0.9V 1.2V 1.5V
I(Vsense)
V_VDS
Evaluation Circuit
Vsense
0Vdc
U1
2SJ650
VDS
0
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12. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
10.0
Drain reverse current IDR (-A)
1.0
0.1
0.0
0 0.3 0.6 0.9 1.2 1.5
Source - Drain voltage VSD (-V)
Simulation Result
VSD(-V)
IDR(-A) %Error
Measurement Simulation
0.01 0.6000 0.5994 -0.10
0.02 0.6200 0.6193 -0.11
0.05 0.6450 0.6461 0.17
0.1 0.6650 0.6670 0.31
0.2 0.6900 0.6893 -0.10
0.5 0.7250 0.7231 -0.26
1 0.7550 0.7551 0.02
2 0.7950 0.7962 0.15
5 0.8700 0.8698 -0.02
10 0.9500 0.9494 -0.06
20 1.0700 1.0703 0.03
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13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.6us 0.8us 1.0us 1.1us 1.3us 1.5us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.6v U1
TD = 60ns D2SJ650_P
TR = 10ns
TF = 10ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 18.000 18.402 2.23
trb ns 24.000 23.824 -0.73
trr ns 42.000 42.226 0.54
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14. Reverse Recovery Characteristic Reference
Measurement
Trj=18.00(ns)
Trb=24.00(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
-10mA
-8mA
-6mA
-4mA
-2mA
0A
0V -10V -20V -30V -40V -50V
I(R1)
V_V1
Evaluation Circuit
R1
0.001m
U1
2SJ650
V1
0Vdc R2
100MEG
0
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16. Zener Voltage Characteristic Reference
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